产品编号 A109771 | CAS号 24304-00-5 | Aladdin
Aluminum nitride
99.9% metals basis,50nm
货号 规格 库存 价格 数量
A109771-100g 99.9% metals basis,50nm 上海(4)
A109771-25g 99.9% metals basis,50nm 上海(8)
A109771-500g 99.9% metals basis,50nm 上海(预计3-7周)


敏感性 对湿度敏感
密度 3.2600
熔点 >2200°C
存贮条件 充氩气储存


产品介绍 本产品纯度高、粒径小、分布均匀、比表面积大、高表面活性、松装密度低,良好的注射成形性能;用于复合材料,与半导体硅匹配性好、界面相容性好,可提高复合材料的机械性能和导热介电性能。
别名 纳米ALN;Aluminum mononitride
应用 导热性好,热膨胀系数小,是良好的耐热冲击材料。抗熔融金属腐蚀的能力强,是熔铸纯铁、铝和铝合金理想的坩埚材料。


1、 导热硅胶和导热环氧树脂
超高导热纳米复合硅胶具有良好的导热性, 良好的电绝缘性, 较宽的电绝缘性和使用温度(工作温度-60℃ --200℃), 较低的稠度和良好的施工性能。产品已达或超过进口产品, 因为可取代同类进口产品而广泛应用于电子器件的热传递介质,提高工作效率。如CPU与散热器填隙、大功率三极管、可控硅元件、二极管、与基材接触的细缝处的热传递介质。纳米导热膏是填充IC或三极管与散热片之间的空隙,增大它们之间的接触面积,达到更好的散热效果。
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标识符号 GHS05 GHS05, GHS07 GHS07
信号词 Danger
风险声明 (欧洲) R36/37/38
安全声明(欧洲) S26;S37/39
警示性声明 P261,P280,P305+P351+P338,P310
危害码(欧洲) Xi
危害声明 H314,H335
个人防护设备 dust mask type N95 (US),Eyeshields,Gloves
WGK德国 3
Elad Gross, Amir Nevet, Asaf Pesach, Eva Monroy, Shmuel E Schacham, Meir Orenstein, Mordechai Segev, Gad Bahir
We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carrie...Read More
Emmanuel Defay, Nizar Ben Hassine, Patrick Emery, Guy Parat, Julie Abergel, Arnaud Devos
A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The ty...Read More
Lixia Qin, Yifeng Duan, Hongliang Shi, Liwei Shi, Gang Tang
The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the [0001] direction are systematically investigated usi...Read More
J Hees, N Heidrich, W Pletschen, R E Sah, M Wolfer, O A Williams, V Lebedev, C E Nebel, O Ambacher
Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we pres...Read More
Olivier Pellerin, Massimiliano di Primio, Olivier Sanchez, Guy Meyer, Marc Sapoval
To prospectively evaluate the outcomes of ALN inferior vena cava (IVC) filter extractions after long-term implantation (ie,>1 y).Between November 2004 and January 2011, 503 retrievable ALN IVC filt...Read More
Simona S Petroni, Francesco F Guido, Bruno B Torre, Andrea A Falqui, Maria Teresa MT Todaro, Roberto R Cingolani, Massimo M De Vittorio
The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant cap...Read More
A A Lupu, M M Tchernycheva, Y Y Kotsar, E E Monroy, F H FH Julien
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption va...Read More
Wolfram H P WH Pernice, Chi C Xiong, Hong X HX Tang
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrate...Read More
Javad J Beheshtian, Mohammad T MT Baei, Ali Ahmadi AA Peyghan, Zargham Z Bagheri
Single-walled aluminum nitride nanotubes (AlNNTs) are introduced as an electronic sensor for detection of sulfur dioxide (SO?) molecules based on density functional theory calculations. The proposed s...Read More
Mohammad T MT Baei, Ali Ahmadi AA Peyghan, Masoumeh M Moghimi
Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140...Read More
Javad J Beheshtian, Zargham Z Bagheri, Mohammad M Kamfiroozi, Ali A Ahmadi
The stability, geometry and electronic structure of the title nanoclusters were compared by using density functional theory (DFT) calculations. Their electrical property analysis showed that the relat...Read More
Chang-wen CW Zhang, Fu-bao FB Zheng
Based on first-principles calculations, the geometric, electronic, and magnetic properties as well as the relative stability of the fully hydrogenated and semihydrogenated AlN nanosheets (NSs) have be...Read More
Yong-Bing YB Tang, Xiang-Hui XH Bo, Jun J Xu, Yu-Lin YL Cao, Zhen-Hua ZH Chen, Hai-Sheng HS Song, Chao-Ping CP Liu, Tak-Fu TF Hung, Wen-Jun WJ Zhang, Hui-Ming HM Cheng, Igor I Bello, Shuit-Tong ST Lee, Chun-Sing CS Lee
Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical v...Read More
Santino D Carnevale, Jing Yang, Patrick J Phillips, Michael J Mills, Roberto C Myers
Bottom-up nanostructure assembly has been a central theme of materials synthesis over the past few decades. Semiconductor quantum dots and nanowires provide additional degrees of freedom for charge co...Read More
Xuebin Wang, Jinhui Song, Fan Zhang, Chengyu He, Zheng Hu, Zhonglin Wang
We're sorry this abstract is currently not available....Read More
Ning N Liu, Qiang Q Wu, Chengyu C He, Haisheng H Tao, Xizhang X Wang, Wei W Lei, Zheng Z Hu
Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively ...Read More
Norio Iizuka, Haruhiko Yoshida, Nobuto Managaki, Toshimasa Shimizu, Sodabanlu Hassanet, Chiyasit Cumtornkittikul, Masakazu Sugiyama, Yoshiaki Nakano
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the couplin...Read More
Chengjie Zuo, Jan Van der Spiegel, Gianluca Piazza
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows...Read More
Ruyen Ro, Yuan-Feng Chiang, Chia-Chi Sung, Ruyue Lee, Sean Wu
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamon...Read More
Sangbok Park, Joosung Hwang, Youngwoo Kwon, Changyul Cheon
In this paper, we present an antenna system for microwave non-invasive hyperthermia lipolysis. The antenna system consists of a circular waveguide antenna radiating electromagnetic waves, AlN(Aluminum...Read More
Fang F Qian, Megan M Brewster, Sung K SK Lim, Yichuan Y Ling, Christopher C Greene, Oleg O Laboutin, Jerry W JW Johnson, Silvija S Grade?ak, Yu Y Cao, Yat Y Li
We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanow...Read More
Mohammad T MT Baei, Ali Ahmadi AA Peyghan, Khadijeh K Tavakoli, Ali Kazemi AK Babaheydari, Masoumeh M Moghimi
Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP...Read More
Chih-Ming CM Lin, Yung-Yu YY Chen, Valery V VV Felmetsger, Debbie G DG Senesky, Albert P AP Pisano
An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb w...Read More
Javad J Beheshtian, Hamed H Soleymanabadi, Mohammad M Kamfiroozi, Ali A Ahmadi
The thermodynamic and kinetic feasibility of H(2) dissociation on the BN, AlN, BP and AlP zigzag nanotubes has been investigated theoretically by calculating the dissociation and activation energies. ...Read More
Hong Rak Choi, Bhaskar Chandra Mohanty, Jong Seong Kim, Yong Soo Cho
AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-...Read More
Matthias Stegmaier, Wolfram H P Pernice
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip...Read More