超高导热纳米复合硅胶具有良好的导热性， 良好的电绝缘性， 较宽的电绝缘性和使用温度（工作温度-60℃ --200℃）， 较低的稠度和良好的施工性能。产品已达或超过进口产品， 因为可取代同类进口产品而广泛应用于电子器件的热传递介质，提高工作效率。如CPU与散热器填隙、大功率三极管、可控硅元件、二极管、与基材接触的细缝处的热传递介质。纳米导热膏是填充IC或三极管与散热片之间的空隙，增大它们之间的接触面积，达到更好的散热效果。
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Measuring the refractive index around intersubband transition resonance in GaN/AlN multi quantum wells.
We present the direct measurement of the refractive index distribution (spectral dispersion) arising from an intersubband transition in GaN/AlN multi quantum wells structure. The measurement is carrie...Read More
A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The ty...Read More
The structural stability, spontaneous polarization, piezoelectric response, and electronic structure of AlN and GaN under uniaxial strain along the  direction are systematically investigated usi...Read More
Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.
Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we pres...Read More
To prospectively evaluate the outcomes of ALN inferior vena cava (IVC) filter extractions after long-term implantation (ie,>1 y).Between November 2004 and January 2011, 503 retrievable ALN IVC filt...Read More
The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant cap...Read More
Electroabsorption and refractive index modulation induced by intersubband transitions in GaN/AlN multiple quantum wells.
The aim of the present paper was to determine the index variation in the GaN/AlN heterostructures related to the population/depletion of the quantum well fundamental state leading to the absorption va...Read More
High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics.
We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrate...Read More
Single-walled aluminum nitride nanotubes (AlNNTs) are introduced as an electronic sensor for detection of sulfur dioxide (SO?) molecules based on density functional theory calculations. The proposed s...Read More
Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140...Read More
The stability, geometry and electronic structure of the title nanoclusters were compared by using density functional theory (DFT) calculations. Their electrical property analysis showed that the relat...Read More
Based on first-principles calculations, the geometric, electronic, and magnetic properties as well as the relative stability of the fully hydrogenated and semihydrogenated AlN nanosheets (NSs) have be...Read More
Arrays of well-aligned AlN nanowires (NWs) with tunable p-type conductivity were synthesized on Si(111) substrates using bis(cyclopentadienyl)magnesium (Cp(2)Mg) vapor as a doping source by chemical v...Read More
Bottom-up nanostructure assembly has been a central theme of materials synthesis over the past few decades. Semiconductor quantum dots and nanowires provide additional degrees of freedom for charge co...Read More
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Patterned growth of AlN nanocones on a Ni-coated Si substrate is demonstrated through the reaction between AlCl(3) and NH(3) at 700 degrees C with Mo grid as a mask. The AlN nanocones are selectively ...Read More
Spot-size converters for an all-optical switch utilizing the intersubband transition in GaN/AlN multiple quantum wells are studied with the purpose of reducing operation power by improving the couplin...Read More
1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.
This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows...Read More
In this study, the finite element method is employed to calculate SAW characteristics in (100) AlN/diamond based structures with different electrical interfaces; i.e., IDT/ AlN/diamond, AlN/IDT/diamon...Read More
In this paper, we present an antenna system for microwave non-invasive hyperthermia lipolysis. The antenna system consists of a circular waveguide antenna radiating electromagnetic waves, AlN(Aluminum...Read More
Controlled synthesis of AlN/GaN multiple quantum well nanowire structures and their optical properties.
We report the controlled synthesis of AlN/GaN multi-quantum well (MQW) radial nanowire heterostructures by metal-organic chemical vapor deposition. The structure consists of a single-crystal GaN nanow...Read More
NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.
Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP...Read More
An AlN/3C-SiC composite layer enables the third-order quasi-symmetric (QS(3)) Lamb wave mode with a high quality factor (Q) characteristic and an ultra-high phase velocity up to 32395 ms(-1). A Lamb w...Read More
The thermodynamic and kinetic feasibility of H(2) dissociation on the BN, AlN, BP and AlP zigzag nanotubes has been investigated theoretically by calculating the dissociation and activation energies. ...Read More
AlN passivation layer-mediated improvement in tensile failure of ZnO:Al thin films on polyethersulfone substrates is investigated. ZnO:Al films without any passivation layer were brittle with a crack-...Read More
Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip...Read More