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Pleural effects of indium phosphide in B6C3F1 mice: nonfibrous particulate induced pleural fibrosis.
The mechanism(s) by which chronic inhalation of indium phosphide (InP) particles causes pleural fibrosis is not known. Few studies of InP pleural toxicity have been conducted because of the challenges...Read More
To develop a silicon (Si) and cadmium telluride (CdTe) imaging Compton camera for biomedical application on the basis of technologies used for astrophysical observation and to test its capacity to per...Read More
We report the design, fabrication and characterization of an integrated frequency discriminator on InP technology for microwave photonic phase modulated links. The optical chip is, to the best of our ...Read More
Unlike graphene, a hexagonal InP sheet (HInPS) cannot be obtained by mechanical exfoliation from the native bulk InP, which crystallizes in the zinc blende structure under ambient conditions. However,...Read More
Several metal-organic framework compounds (MOF-5, MIL-68(Ga), MIL-68(In), MIL-53(Al)) were loaded with azobenzene (AZB), as confirmed by XRPD measurements and elemental analysis. By IR spectroscopy, i...Read More
Gain-switched pulses from InGaAs ridge-quantum-well lasers limited by intrinsic dynamical gain suppression.
Gain-switched pulses of InGaAs double-quantum-well lasers fabricated from identical epitaxial laser wafers were measured under both current injection and optical pumping conditions. The shortest outpu...Read More
Optical coupling from InGaAs subcell to InGaP subcell in InGaP/InGaAs/Ge multi-junction solar cells.
Spatially-resolved electroluminescence (EL) images in the triple-junction InGaP/InGaAs/Ge solar cell have been investigated to demonstrate the subcell coupling effect. Upon irradiating the infrared li...Read More
Highly emissive and air-stable AgInS-ZnS quantum dots (ZAIS QDs) with quantum yields of up to 20% have been successfully synthesized directly in aqueous media in the presence of polyacrylic acid (PAA)...Read More
A novel organic-inorganic platform comprising of chitosan (CH) modified nanostructured magnesium oxide (nanoMgO) has been electrophoretically deposited on the indium-tin-oxide (ITO) substrate. The sin...Read More
The influence of the encapsulation of In2O3 nanorods with ZnO on the H2S gas sensing properties was studied. In2O3-core/ZnO-shell nanorods were fabricated by a two step process comprising the thermal ...Read More
Spectroscopic studies of In2O3 nanostructures; photovoltaic demonstration of In2O3/p-Si heterojunction.
The thermal oxidation process of the indium nitride (InN) nanorods (NRs) was studied. The SEM studies reveal that the cracked and burst mechanism for the formation of indium oxide (In2O3) nanostructur...Read More
The photosensitive In2O3-p-InSe heterostructures in which the In2O3 frontal layer has a nanostructured surface were investigated. The photoresponse spectra of such heterostructures are found to be ess...Read More
Electrical and optical properties of indium zinc oxide (IZO) thin films by continuous composition spread.
Indium zinc oxide (IZO) films were deposited on glass substrate at room temperature using off-axis RF sputtering-continuous composition spread (CCS) system. The full range composition of IZO films wer...Read More
Growth of in-doped ZnO hollow spheres composed of nanosheets networks and nanocones: structural and optical properties.
This work reports the facile growth and characterizations of In-doped ZnO hollow spheres composed of nanosheets networks and nanocones. The In-doped ZnO hollow spheres composed of nanosheets networks ...Read More
Structural and optical investigation of GaInP quantum dots according to the growth thickness for the 700 nm light emitters.
We investigate Ga0.33In0.67P quantum dot structures appropriate for special lighting applications in terms of structural and optical behaviors. The Ga0.33In0.67P materials form from 2-dimentional to 3...Read More
Experimental demonstration of self-aligned InP/InGaAsP polarization converter for polarization multiplexed photonic integrated circuits.
Highly efficient, low-loss, and compact InP/InGaAsP polarization converter based on a half-ridge waveguide structure is fabricated and demonstrated experimentally. The device is fabricated by a simple...Read More
Indium/TFA-Catalyzed Synthesis of Tetracyclic [6,5,5,6] Indole Ring, via a Tandem Cycloannulation of β-Oxodithioester with Tryptamine.
The cycloannulation of β-oxodithioesters and tryptamine in dichloromethane in the presence of a catalytic amount of InCl3 and TFA gave the novel 5-aryl/heteroaryl 2a(1),9b-dihydro-1H-2a,5a-diaza-cycl...Read More
Localized surface plasmon-enhanced near-ultraviolet emission from InGaN/GaN light-emitting diodes using silver and platinum nanoparticles.
We demonstrate localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) using silver (Ag) and platinum (Pt) nanoparticles (NPs). The optical output power of NUV-LEDs ...Read More
Surface oxide effect on optical sensing and photoelectric conversion of α-In2Se3 hexagonal microplates.
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 10...Read More
In situ controlled growth of ZnIn(2)S(4) nanosheets on reduced graphene oxide for enhanced photocatalytic hydrogen production performance.
A reduced graphene oxide (RGO)-ZnIn(2)S(4) nanosheet composite was successfully synthesized via an in situ controlled growth process. The as-obtained RGO-ZnIn(2)S(4) composite showed excellent visible...Read More
Dependence of efficiencies in GaN-based vertical blue light-emitting diodes on the thickness and doping concentration of the n-GaN layer.
We investigate the dependence of various efficiencies in GaN-based vertical blue light-emitting diode (LED) structures on the thickness and doping concentration of the n-GaN layer by using numerical s...Read More
Optimal overlayer inspired by Photuris firefly improves light-extraction efficiency of existing light-emitting diodes.
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from th...Read More
A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (C...Read More
This paper documents the first example of In(III)-catalyzed selective 6-exo-dig hydroarylation of o-propargylbiaryls and their subsequent double-bond migration to obtain functionalized phenanthrenes. ...Read More
Highly luminescent water-soluble quaternary Zn-Ag-In-S quantum dots for tumor cell-targeted imaging.
Exploring the synthesis and biomedical applications of biocompatible quantum dots (QDs) is currently one of the fastest growing fields of nanotechnology. Hence, in this work, we present a facile appro...Read More
Influence of composition on the performance of sintered cu(in,ga)se2 nanocrystal thin-film photovoltaic devices.
Thin-film photovoltaic devices (PVs) were prepared by selenization using oleylamine-capped Cu(In,Ga)Se (CIGS) nanocrystals sintered at a high temperature (>500?°C) under Se vapor. The device perfo...Read More
Nonradiative energy transfer from an InGaN quantum well to Ag nanoparticles is unambiguously demonstrated by the time-resolved photoluminescence. The distance dependence of the energy transfer rate is...Read More
An Analytical Band Monte Carlo model was used to investigate the temperature dependence of impact ionization in InAs. The model produced an excellent agreement with experimental data for both avalanch...Read More
Performance improvement of GaN-based LEDs with step stage InGaN/GaN strain relief layers in GaN-based blue LEDs.
The performance of nitride-based LEDs was improved by inserting dual stage and step stage InGaN/GaN strain relief layer (SRL) between the active layer and n-GaN template. The influences of step stage ...Read More
Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.
InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furna...Read More
Enhanced performance of InGaN/GaN based solar cells with an In(0.05)Ga(0.95)N ultra-thin inserting layer between GaN barrier and In(0.2)Ga(0.8)N well.
The effect of ultra-thin inserting layer (UIL) on the photovoltaic performances of InGaN/GaN solar cells is investigated. With UIL implemented, the open-circuit voltage was increased from 1.4 V to 1.7...Read More
Indium(III) Halide-Catalyzed UV-Irradiated Radical Coupling of Iodomethylphosphorus Compounds with Various Organostannanes.
The first catalytic radical coupling of iodomethylphosphorus compounds was accomplished with allyl-, alkenyl-, and allenylstannanes under UV irradiation in the presence of an indium(III) halide cataly...Read More
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer.
This work reports both experimental and theoretical studies on the InGaN/GaN light-emitting diodes (LEDs) with optical output power and external quantum efficiency (EQE) levels substantially enhanced ...Read More
Optical polarization characteristics of semipolar (303?1) and (303?1?) InGaN/GaN light-emitting diodes.
Linear polarized electroluminescence was investigated for semipolar (303?1) and (303?1?) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was ...Read More