Results in Physics
·
2021
·
IF 4.476
Shutong Hao,Xiaolin Liu,Mu Gu,Jiajie Zhu
γ-CuI is a promising scintillator owing to the ultrafast decay time of 130 ps contributed by the near-band-edge emission. The luminescence properties of the γ-CuI are directly related to its intrinsic defects, such as Cu and I vacancies. In this context, tuning the intrinsic defects by cation and anion doping was proposed to improve the scintillation performance of γ-CuI. The structural properties of the dopants, including Li, Na, Mg, F, Cl and Br, were investigated by first-principles calculations. The Li, Na and Mg atoms were calculated to occupy the Cu site. The Cl and Br atoms turned out to replace the I atoms. Importantly, the Cu vacancies were created by Cl and Br dopants, and the I vacancies were eliminated through Li, Na, Mg, Cl and Br doping. These theoretical results were demonstrated by photoluminescence and X-ray excited luminescence spectra.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
·
2019
·
IF 3.375
Li You,Jianxin Cao,Fei Liu
A novel microchannel synthesis route for continuous synthesis of nanosized copper iodide (γ-CuI) using hydrated hydrazine as reducing agent was proposed. We continuously produced γ-CuI spherical nanoparticles in 99% yield and grain size of ca. 44–100 nm. Furthermore, the utilization of hydrated hydrazine was essential in precluding powder plugging the microchannel by self-generated N2. The microreaction process conditions, such as residence time, pH value, temperature, and reactant concentration, had great impact on the crystal phase and grain size. The optical properties analysis showed that red-shift in band age and emission intensity of photoluminescence spectra at 428 nm decreased with decreasing grain size. Moreover, the nanosized spherical γ-CuI exhibits enhanced photocatalytic performance in the photodegradation of methylene blue and methyl orange.
研究领域:
材料科学
·
化学工程
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Shutong Hao,Xiaolin Liu,Qianli Li,Mu Gu,Shuai Cheng,Jingtai Zhao
The demand for scintillators with ultrafast decay times, high spatial resolutions, and high stabilities is increasing due to the development of ultrafast hard X-ray detection, hard X-ray imaging, and high-energy physics facilities. γ-CuI single crystals, which exhibit ultrafast luminescence and high stopping power for hard X-rays, hold great promise for such applications. However, slow luminescence and poor stability caused by surface iodine deficiencies hinder the practical use of γ-CuI. Herein, we treated a γ-CuI single crystal by iodine annealing and SiO2 coating and investigated its crystal structure and luminescence properties in detail. Iodine annealing significantly enhanced the near-band-edge emission of the γ-CuI crystal with an ultrafast decay time of less than 1 ns, while completely suppressing the slow luminescence. Moreover, the SiO2 film effectively prevented the oxidation and decomposition of surface iodine, leading to substantial improvement in luminescence stability. The γ-CuI crystal demonstrated an ultrahigh spatial resolution of 1.5 μm in X-ray imaging, highlighting its potential for ultrafast hard X-ray imaging applications. This study provides insight into the growth, optimization, and application of γ-CuI crystals, advancing the field of scintillator materials.
研究领域:
材料科学
·
光学工程
·
核技术应用
✓ 已验证
产品关联
DOI
PubMed
高影响因子
OPTICAL MATERIALS
·
2017
·
IF 2.238
Shuangqiang Yue,Mu Gu,Xiaolin Liu,Juannan Zhang,Shiming Huang,Bo Liu,Chen Ni
γ-CuI single crystal was grown via evaporation method in ZnI 2 acetonitrile solvent. The ZnI 2 plays a unique role which can not only increase the solubility of CuI in acetonitrile but also introduce the Zn and I ions in the crystal. The γ-CuI crystal grown in ZnI 2 acetonitrile is regular and transparent. Its size reaches up to 18 × 11 × 2 mm 3 which is larger than that of the crystal grown in pure acetonitrile. In terms of the photoluminescence , the intensity of the emission at 411 nm of the crystal grown with ZnI 2 as a cosolute is much higher than that of the crystal grown without ZnI 2 , which implies that the crystallinity of the crystal can be improved by ZnI 2 doping. The X-ray excited luminescence of the crystal shows that the emission at 435 nm can be significantly enhanced and the emission near 680 nm can be suppressed by introducing Zn and I in the natural non-stoichiometry γ-CuI crystal. The nature of the phenomena is discussed. The decay time of the emission at 435 nm similar to that of the emission at 411 nm is faster than the detection limit of the instrument, i.e. less than 1 ns, and the average decay time of the emission near 680 nm is about 183 ns. The results can provide a useful guide to optimize the scintillation properties of γ-CuI single crystal.
研究领域:
材料科学
·
光学
✓ 已验证
产品关联
DOI
高影响因子
DALTON TRANSACTIONS
·
2021
·Vol. 50
·期 45
·16795-16802
·
IF 4.39
Su-Yun Zhang,Fangchao Long,Chenxu Kang,Zhengyuan Jin,Ailun Zhao,Huawei Liang,Shuangchen Ruan,Yu-Jia Zeng
γ-phase copper(I) iodide (abbreviated to CuI hereafter) with different morphologies is realized through a one-step redox process from I-containing ionic liquid (IL) or poly(ionic liquid)s (PILs) precursors at room temperature. The phase composition, morphology, and electronic states of the synthesized CuI samples are characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). The resulting CuI products exhibit three different types of morphologies, namely nanocrystals, with an average size of 0.8 ± 0.2 μm, nanoplates, with a thickness of 35.8 ± 0.9 nm, and nanoflowers, with petals with a thickness of 12.2 ± 0.8 nm. Moreover, the as-synthesized CuI samples exhibit gradually diminishing bandgaps and improved photocatalysis performance for the photodegradation of rhodamine B (RhB) under visible light irradiation as the thickness decreases. XPS measurements confirm that IL/PILs coupled to the CuI surface, resulting in a further charge transfer between Cu and I. These results conclusively prove that IL/PILs serve as both the reducing agents and assemble as orientation templates in the formation of the CuI nanostructures, and also successfully mediate the functional properties of the samples by changing the surface electronic structures.
研究领域:
材料科学
·
化学
·
纳米技术
·
环境科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SENSORS AND ACTUATORS A-PHYSICAL
·
2026
·
IF 5.1
Qingyin Feng,Xueping Zhao,Zhuoya Zhang,Hai Zhang,Pucun Bai
A flexible γ-CuI/AZO p-n heterojunction UV photodetector was successfully fabricated on a PEN substrate. • Self-powered UV detection with R of 4 mA/W, D* of 2.62 × 10 11 Jones, and fast rise time and decay time (306/116 ms). • The heterojunction exhibits excellent mechanical durability, maintaining stable photoresponse after 500 bending cycles. Flexible ultraviolet (UV) photodetectors have broad application prospects in wearable electronics and low-power optoelectronic systems. In this work, a self-powered UV photodetector based on a γ-CuI/AZO p-n heterojunction was successfully fabricated on a flexible polyethylene naphthalate substrate. Both γ-CuI and AZO films exhibit high visible-light transmittance with optical bandgaps of 3.03 eV and 3.28 eV, respectively, rendering them suitable for UV detection. The device demonstrates distinct rectification behavior in the dark and a markedly enhanced photoresponse under 365 nm UV illumination, achieving stable self-powered operation at 0 V bias. Under a 0 V bias and an incident power density of 103.2 mW/cm 2 , the device demonstrates rise and decay times of 306 ms and 116 ms, respectively. At 33.4 mW/cm 2 , the device achieves a responsivity of 4 mA/W and a specific detectivity of 2.62 × 10 11 Jones, confirming its effective self-powered UV detection capability. Furthermore, cyclic bending tests under a fixed 5-mm radius curvature revealed that the device maintains distinguishable photoresponse after 500 bending cycles, demonstrating robust mechanical tolerance and reliable photodetection under fatigue deformation. This work provides a feasible route for the construction of flexible self-powered UV photodetectors based on p–n heterojunctions. Download: Download high-res image (157KB) Download: Download full-size image
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Qing Wang,Xueping Zhao,Chong Wu,Qingyin Feng,Hai Zhang,Pucun Bai
High-mobility p-type transparent conductive films (TCFs) are crucial for transparent optoelectronic devices. This work addresses this gap by growing high-quality γ-CuI films on c-Al2O3 substrates via physical vapor transport (PVT), with a focus on the role of deposition temperature. The temperature significantly influences the structural, morphological, optical, and electrical properties of the films. The method delivers an ultrahigh deposition rate of 371 nm/min at 490 °C. The films exhibit (111) out-of-plane orientation and >85% average transmittance (400–800 nm). Structural and morphological analyses reveal temperature-driven growth mode from porous polycrystalline islands to step-flow triangular domains and merged hexagonal structures, which is governed by domain epitaxy. The φ-scan and transmission electron microscopy (TEM) results established the epitaxial relationship as γ-CuI <112̅> (111) // Al2O3 [1̅1̅20] (0001). Electron backscatter diffraction (EBSD) revealed two crystallographic domains that were rotated by 60° relative to each other. The hole mobility increased with deposition temperature, yielding a high hole mobility of 19 cm2/V·s at 490 °C with a carrier concentration of 1.86 × 1017/cm3. These findings indicate that the deposition temperature is critical for achieving high-mobility films. Furthermore, PVT affords a scalable and efficient epitaxy route to p-type transparent conductors, thereby enabling high-performance transparent optoelectronic devices.
研究领域:
材料科学
·
半导体物理
·
薄膜技术
·
光电子学
·
凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）