The rapid development of advanced electronics, hybrid vehicles, etc. has imposed heightened requirements on the performance of polymer dielectrics. However, the energy density (Ue) of polymer dielectrics significantly decreases due to increased leakage current and dielectric loss under high temperatures and high electric fields. Herein, γ phase Ga2O3 (γ-Ga2O3) nanoplates with wide-bandgap (∼4.7 eV) and moderate dielectric constant (∼10.0) were synthesized and incorporated into a polyimide (PI) matrix. The γ-Ga2O3 nanoplates impede charge injection and transport within the nanocomposites under dual trap mechanisms, namely, deep traps introduced by band alignment at the interface between γ-Ga2O3 and PI and the defective spinel structure of γ-Ga2O3 with lattice defects that function as additional charge carrier traps. Additionally, γ-Ga2O3 nanoplates also serve as electron scattering centers and act as electrical barriers; thus, the leakage current and conduction loss get reduced. Consequently, the nanocomposite with 1 wt % γ-Ga2O3 exhibits a discharge energy density of 4.591 J cm–3 and a breakdown strength (Eb) of 501.49 MV m–1 at 150 °C, which are significantly higher than those of commercial biaxially oriented polypropylene (BOPP) at 25 °C. Moreover, the nanocomposite exhibits remarkable cyclic stability over 120,000 cycles with only 1.2% fluctuation. This work provides a semiconductor filler strategy in the design of polymer nanocomposites for capacitive energy storage at high-temperature and high electric field environments.
Solar light-driven overall water splitting for hydrogen production is an ideal solution to climate warming and energy shortage issues. Obtaining a highly efficient and stable photocatalyst remains a major challenge at present. Herein, NixP/γ-Ga2O3 nanosheets, which were synthesized from NiCl2, NaH2PO2, and home-made γ-Ga2O3 nanosheets by the photodeposition method under 254 UV irradiation for 30 min, are found as a highly active and durable photocatalyst for pure water splitting into H2 and O2 without a sacrificial reagent. The H2 production rate is as high as 5.5 mmol·g–1·h–1 under 125 W high-pressure mercury lamp irradiation, which is 3.4 and 2.5 times higher than that on the pristine γ-Ga2O3 nanosheets and Pt/γ-Ga2O3 nanosheets, respectively, and is 2.0 times higher than that on the 0.5 wt % Ni2P/γ-Ga2O3 reported previously. However, the O2 evolution rate is much less than the H2 evolution rate in the initial reaction stage. On prolonging the irradiation time, H2 evolution declines, while O2 evolution increases until it reaches its stoichiometric value corresponding to H2. The reason for the photocatalytic behavior of NixP/γ-Ga2O3 is studied and the corresponding mechanism is suggested. The absent or low oxygen evolution in the initial reaction stage is because the dioxygen generated from water oxidation by the photogenerated holes is wholly or partially captured by the surface oxygen vacancies to form the surface peroxide bonds (−O–O−). Once the oxygen vacancies are eliminated by the photogenerated O2, the overall water splitting reaction would reach the steady state. Thereafter, H2 production decreases from 5.5 to 2.0 mmol·g–1·h–1, but the O2 evolution gradually approaches the corresponding stoichiometric value, especially for the photocatalyst treated with H2O2 for 24 h.
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