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THIN SOLID FILMS · 2022 · IF 2.358

Ternary resistive switching memory behavior of polycarbazole:TiO2 nanoparticles-based device

Yingna Zhang,Xiaofeng Zhao,Meng Gao,Zhaohua He,Jiangshan Chen,Shuhong Wang,Cheng Wang

In this paper, the donor-acceptor copolymer poly[2,7–9- (heptadecan-9-yl)-9H-carbazole-co-12H-benzo[5,6]isoindolo[2,1- a ]benzimidazole-12-one] (PCz-BI) was synthesized by Suzuki reaction. Devices based on PCz-BI and titanium dioxide (TiO 2 ) nanoparticles composite as the active layer were prepared by a spin coating method and showed ternary resistance switching storage properties. It was shown that the addition of metal oxide nanoparticles improves memory storage performances. The optimum TiO 2 content was 6 wt% and this device had the lowest SET voltage of -0.5 V and the best switching current ratio of 1:10 1.6 :10 4.8 . Moreover, the developed device proved as highly stable during 10 3 cycles. The conductivity and the structural basis for the storage mechanism were studied using electrochemical measurements, ultraviolet-visible spectroscopy, and quantum chemical calculations.

研究领域: 材料科学 · 电子工程
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