JOURNAL OF MATERIALS SCIENCE
·
2020
·Vol. 56
·期 7
·4727-4740
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IF 3.553
Deng Shuping,Jiang Xianyan,Chen Lili,Zhang Ziye,Qi Ning,Wu Yichu,Chen Zhiquan,Tang Xinfeng
In this paper, we reported the enhanced thermoelectric properties of Cd and Sn dual-doped Cu 3 SbSe 4 -based material prepared by the vacuum melting combined with spark plasma sintering process. X-ray photoelectron spectroscopy studies revealed the presence of Cu + , Cd 2+ , Sb 5+ , Sn 4+ and Se 2− states of Cu, Cd, Sb, Sn and Se, respectively. All samples exhibited p -type conduction with carrier concentrations varying from 0.54 × 10 18 to 46.42 × 10 18 cm −3 , while carrier mobility changes from 18.2 to 46.6 cm 2 V −1 s −1 at room temperature. Cd doping at Cu sites in the Cu 3 SbSe 4 can reduce the lattice thermal conductivity, while Sn doping at Sb sites is effective to adjust the carrier concentration. The further reduction in thermal conductivity is observed in Cd-Sn co-doped samples resulting from an accumulated effect combining point defects and the secondary-phase CdSe. Consequently, the maximum dimensionless figure of merit ( ZT ) value reaches 0.66 at 623 K for the Cu 2.75 Cd 0.25 Sb 0.94 Sn 0.06 Se 4 sample, which is 190% larger than that of the intrinsic sample ( ZT of 0.35). The findings provide an alternative strategy of boosting the carrier and phonon transports of the Cu 3 SbSe 4 , which is also a meaningful guidance to achieve high performance in other copper-based chalcogenides.
研究领域:
材料科学
·
凝聚态物理
·
无机非金属材料
·
热电转换
·
半导体物理
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 12
·3479-3485
·
IF 6.641
Xiaole Yu,Yudong Hou,Haiyan Zhao,Jing Fu,Mupeng Zheng,Mankang Zhu
Based on the strong requirement for self-powered devices, energy harvesting by utilizing piezoelectric materials has recently attracted extensive attention. Transduction coefficient (d33·g33) is the core parameter of the piezoelectric energy harvesting materials, which is directly determined by the ratio of the piezoelectric charge constant (d33) to the dielectric constant (εr). Unfortunately, traditional solid solution design method generally causes a simultaneous increase or decrease in both d33 and εr, making it difficult to obtain a high d33·g33. In this work, a composite design strategy was proposed to separate the synergistic change of d33 and εr. This was achieved by introducing lower-εr ZnAl2O4 secondary phase into the popular 0.2Pb(Zn1/3Nb2/3)O3–0.8Pb(Zr1/2Ti1/2)O3 (PZN–PZT) perovskite matrix. Encouragingly, the εr value rapidly decreased, while d33 value improved within a certain range compared to those of pure PZN–PZT. This was ascribed to the formation of fine domain structures in composites caused by the heterogeneous interfacial effect. Subsequently, the cantilever beam type piezoelectric energy harvesters (PEHs) made from the optimal composites exhibited a high power density of 4.0 μW mm−3 at 1 g acceleration. More importantly, PEHs could harvest vibrational energy from the operating motor to charge a capacitor and instantly drive wireless micro-sensors, demonstrating their potential application in self-powered electronics. Under the guide of the composite design strategy proposed in this work, more high performance piezoelectric energy harvesting materials can be built in the future.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Nano Energy
·
2023
·
IF 17.6
Yajie Cheng,Junjie Ma,Huaiqing Luo,Meng Cai,Tangyue Xue,Guanghui Yu,Ziqiu Ren,Yanlin Song,Shou Peng,Yiqiang Zhang
The undesired segregation of inactive secondary phase that randomly distributed across the perovskite film is detrimental to charge-carrier transport dynamics and light stability. However, in-depth studies for understanding the underlying chemical reaction mechanism and the relationship between phase structural configuration and physical properties are still lacking. Herein, the segregation behavior of the inactive secondary phase and the underlying microcosmic mechanism regarding ionic chemical replacement reaction and lattice reconfiguration process are systematically elaborated. A high-quality perovskite-PbI 2 heterojunction film is constructed via converting the three-dimensional PbI 2 photoactive phase into a two-dimensional inactive phase, alleviating the energetic disorder of carrier dynamics and photochemical dissociation. The resultant perovskite solar cells achieve an efficiency of 24.23% with excellent light-resistance. The dissociation energetics of phase dimensional structure is theoretically analyzed. This work provides new insights into crystal structure design for constructing high-quality perovskite heterojunction devices.
研究领域:
材料科学
·
物理化学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2019
·
IF 3.45
Xiyong Chen,Mingxin Zhou,Junzuo Shi,Tianquan Liang,Jie Zeng,Xia Yan,Nengneng luo,Weizhou Li,Yuezhou Wei
The effect of nominal Na/Bi ratio on the microstructure and electrical conductivity of A-site fully stoichiometric sodium bismuth titanates , Na 0.5+ x Bi 0.5− x TiO 3− δ , was investigated in this study. Bulk samples with x = 0, 0.01, 0.03, 0.05, 0.07, and 0.1 were prepared by conventional solid state reaction method. The as-calcined powders primarily exhibited the perovskite structure, which was identified by X-ray diffraction. Electron microscopic investigation of the sintered samples, however, revealed the presence of secondary phases, the amounts of which were found to increase with increasing Na/Bi ratio. Further elemental analysis by energy dispersive spectroscopy indicated that the secondary phases were mainly composed of sodium titanates with different Na/Ti ratios. The grain bulk and grain boundary conductivities of Na 0.5+ x Bi 0.5− x TiO 3− δ , measured by two-probe AC electrochemical impedance spectroscopy , significantly increased with increasing Na/Bi ratio when x ≤ 0.03, but remained almost constant at higher x . The synergetic effect of oxygen vacancy creation, grain size reduction, and secondary phase formation on the variation in the conductivity upon increasing the nominal Na/Bi ratio in Na 0.5+ x Bi 0.5− x TiO 3− δ was discussed.
研究领域:
材料科学
·
固态化学
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2022
·
IF 7.305
Xiatong Qin,Bin Xu,Jianjun Lin,Jiaqi Chen,Hanyu Tong,Ye Chen,Pingxiong Yang,Junhao Chu,Lin Sun
Electrodeposition is a promising method to fabricate Cu 2 ZnSn(S,Se) 4 (i.e., CZTSSe) absorber layer thanks to its many advantages such as low-cost and large-scale. However, the secondary phases and intrinsic defects in electrodeposited CZTSSe solar cells inevitably limit the photoelectric performance. Herein, two different kind of precursor films (binary-ternary selenide vs. quaternary selenide) are deliberately fabricated and the effect of these precursors on the secondary phases and intrinsic defects of CZTSSe absorber layer are investigated comprehensively. The absorber layer obtained from binary-ternary selenide precursor has a small amount of ZnSe secondary phases and Cu Sn deep defects , whereas that obtained from the quaternary selenide precursor exhibits the favorable V Cu shallow defects, which is beneficial to the efficiency improvement in CZTSSe. Based on the quaternary selenide precursor film, the CZTSSe solar cell with 10.03% total area efficiency (the active area efficiency is 10.9%) was obtained. This is the highest efficiency of CZTSSe solar cells prepared by the electrodeposition method.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2016
·
IF 4.732
Jing Guo,Wen-Hui Zhou,Ying-Li Pei,Qing-Wen Tian,Dong-Xing Kou,Zheng-Ji Zhou,Yue-Na Meng,Si-Xin Wu
CZTSSe based thin film solar cells have received considerable interests due to low material cost, suitable band gaps and high absorption coefficient of CZTSSe materials. Achieving high efficiency CZTSSe based thin film solar cells often need a high temperature selenization process that always causes Sn loss in the form of gaseous SnSe 2 . Additional Sn complement may decrease the loss of Sn during selenization process and improve the performance of fabricated CZTSSe based thin film solar cells. Here, we investigate the effect of additional Sn complement on the performance of CZTSSe based thin film solar cells fabricated from pure element solution. XRD and Raman characterizations indicate that additional Sn complement could reduce the secondary phase that may cause the voltage loss and decrease of efficiency. The solar cell fabricated with 15% additional Sn complement shows the best conversion efficiency of 8.71% (V OC =0.42 V, J SC =32.73 mA cm −2 , FF=63.19%). To the best of our knowledge, it is the highest efficiency of CZTSSe based thin film solar cells fabricated from pure element solution.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2025
·
IF 6.7
Yongning Liu,Minghao Cui,Xiaoxi Feng,Wenzhen Wang,Xudong Tang,Sirui Bao,Kunpeng Mou,Benlan Zeng,Fangxiong Tang,Jianing Hu,Huaxing Gou,Jinkun Liu,Yan Zhu,Run Xu
CsPbBr3 single crystals have garnered significant attention as one of the most promising candidates for room-temperature semiconductor radiation detectors. However, the current solution-based growth of CsPbBr3 single crystals suffers from issues of the formation of secondary phases (CsPb2Br5) and strain-induced cracks in crystals due to high growth temperatures above the phase transition. In this study, 4-bromobutyric acid (BBA) as an additive was introduced in the precursor, which leads to an effective suppression of secondary phase formation and simultaneously a reduction of the crystal growth temperature. The CsPbBr3 single crystals grown with BBA exhibited improved crystal quality, with a full width at half-maximum of (200) X-ray rocking curve (XRC) as low as 0.025° and a high hole mobility-lifetime product (μτh) of 0.57 × 10–4 cm2/V. Moreover, the energy resolution for 57Co γ-ray spectra was improved to around 15.2%, indicating a great improvement in transport properties for CsPbBr3 single crystals grown with BBA. This study suggests that the effective suppression of the CsPb2Br5 secondary phase is likely one of the most important issues for a spectrometer-grade CsPbBr3 detector.
研究领域:
材料科学
·
辐射探测技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2021
·Vol. 9
·期 48
·27718-27726
·
IF 12.732
Yuanbo Cheng,Menghua Zhu,Fangbao Wang,Ruichen Bai,Jinshan Yao,Wanqi Jie,Yadong Xu
The understanding and tailoring of crystalline defects have been important factors in the technological deployment of established semiconductors. Here, we report the secondary phase (SP) defects of CsPb2Br5 in CsPbBr3 crystals grown by inverse temperature crystallization. The micron-scale SP defects are found to possess a well-defined polyhedral morphology, illustrated by the 14-hedron model. A heterogeneous nucleation mechanism of SP defects on the step-like surface of CsPbBr3 associated with the deviation of the chemical state of the precursor solution is proposed. The spatial inhomogeneity distribution of SP defects is highlighted along the CsPbBr3 crystal growth direction. The SP defects area density at the subsurface is about 6.3%, but it exponentially decreases to 0.51% after thinning for 0.2 mm. Correspondingly, the hole mobility increases from 41.79 to 74.54 cm−2 V−1 s−1. Moreover the infrared transmittance, bulk resistivity and photoresponse ON/OFF ratio are significantly elevated. We emphasize that the lattice distortion region in the near-surface induced by the high density of SP defects severely deteriorates carrier transport due to the formed trapping centers, interface transport barrier and intrinsically poor transmission along the c axis. Therefore, understanding and eliminating SP defects is a preferred alternative for achieving high-performance CsPbBr3-based optoelectronic devices.
研究领域:
材料科学
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）