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Surfaces and Interfaces · 2025 · IF 6.3

Boosting dielectric constant of laminated composites by involving an epsilon-negative layer

Guohua Fan,Jinke Song,Yanan Tang,Xiaoting Song,Yao Liu

Dielectric modulation is arresting in electrical and electronic fields, and high- k is particularly important in applications like energy conversion and pulse power supply. Herein, an innovative strategy that different from conventional practices was adopted to boost the dielectric constant of PVDF-based dielectrics via involving an epsilon-negative layer in the laminates. The epsilon-negative layer was obtained based on the plasmonic state in percolating graphene networks. After stacking with the epsilon-positive layer containing core-shell BaTiO 3 @SiO 2 fillers, dielectric constant of the laminated composites was improved, and it increased constantly with the increasing thickness ratio of the epsilon-negative layer. It's ascertained the boost in dielectric constant was related to the multiple interfacial polarizations inside the layered composites, and the dielectric loss was suppressed by the low loss epsilon-positive layer. Therefore, synergism of epsilon-negative and positive layers in the enhancement of dielectric performance was elucidated, which developed a new avenue to obtain high- k dielectrics by the means of laminated composites.

CAS / MDL: 12047-27-7 78-10-4
研究领域: 材料科学 · 电气工程
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CERAMICS INTERNATIONAL · 2025 ·Vol. 51 ·期 30 ·63013-63021 · IF 5.6

Structural characteristics and microwave dielectric properties of low-loss spinel type Li2M2Ga2Ti3O12 (M = Mg, Zn) ceramics for dielectric resonant antenna applications

Ning Zhang,Junqi Chen,Ning Guan,Huaicheng Xiang,Ying Tang,Yuandong Qin,Liang Fang

Two novel ceramics, Li 2 Mg 2 Ga 2 Ti 3 O 12 (LMGT) and Li 2 Zn 2 Ga 2 Ti 3 O 12 (LZGT), featuring a spinel structure, were synthesized utilizing the solid-state method. Comprehensive characterization confirms that LZGT ( P 4 3 32) forms a B-site 1:3 ordered spinel, while LMGT ( Fd -3 m ) adopts a disordered spinel structure. The ceramics exhibit outstanding microwave dielectric properties, characterized by low ε r of 14.92 and 19.11, high Q×f of 120,000 and 93,800 GHz, and negative τ f of −40.21 and −32.83 ppm/°C for LMGT and LZGT, respectively. The observed ε r values significantly exceed theoretical values due to underestimated Ti 4+ polarizability along with the rattling effect of Ti 4+ and Ga 3+ . Q×f values correlate with packing fraction, lattice energy, and electrical properties. The negative τ f values stem from dominant positive τ ε and τ αm contributions. Utilizing LMGT with ultra-low loss, a dielectric resonator antenna was designed, achieving a radiation efficiency of 93.01 % and a gain of 6.12 dBi at 6.60 GHz, highlighting significant potential for C-band communication satellite applications.

研究领域: 材料科学 · 无机非金属材料 · 电子功能材料 · 微波技术 · 天线工程 · 固态化学
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JOURNAL OF ELECTRONIC MATERIALS · 2021 ·Vol. 50 ·期 4 ·2182-2189 · IF 1.938

Remarkably Elevated Permittivity Achieved in PVDF/1D La2TiO5 Composite Film Materials with Low-Level Dielectric Loss by Adding 2D V2C MXene Phase

Feng Yefeng,Zhao Xiaomiao,Chen Peiyao,Bo Maolin,Deng Qihuang,Zhao Anning,Fu Junjie

High-dielectric-constant (high- k ) polymer–ceramic composites with low-level dielectric loss are expected to enable excellent energy storage. However, high conductivity and high dielectric loss often occur simultaneously with high dielectric constant. To obtain a high dielectric constant but with low conductivity and low dielectric loss, in this work, we studied the ternary polyvinylidene fluoride (PVDF)/La 2 TiO 5 /V 2 C dielectric composite system, which takes advantage of the synergistic effect between the high content (0 wt.% to 40 wt.%) of pseudo-perovskite filler La 2 TiO 5 and the low content (2 wt.%) of highly conductive two-dimensional filler V 2 C. Comparisons with the binary PVDF/La 2 TiO 5 composite system revealed that the ternary PVDF/La 2 TiO 5 /V 2 C composite dielectric system enabled balance and optimization of the comprehensive electrical properties of the composite material. Significantly elevated permittivity as well as depressed low-level dielectric loss were obtained in the ternary composites. The optimized ternary composite with 40 wt.% La 2 TiO 5 and 2 wt.% V 2 C exhibited high dielectric constant of 47 and low dielectric loss of 0.17 at 1 kHz. This work might enable facile fabrication of promising composite dielectric materials based on this excellent synergetic filler strategy.

研究领域: 材料科学 · 电气工程
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POLYMER COMPOSITES · 2020 ·Vol. 41 ·期 5 ·1820-1829 · IF 2.265

Two-dimensional Ti3C2Tx/poly(vinylidene fluoride) metacomposites with weakly negative permittivity

Yuliang Zhang,Kuan Yin,Kai Sun,Shengjia Cao,Fujun Tao,Binbin Wang,Li Li,Xueting Chang,Liangjun Huang,Runhua Fan

In recent years, random metacomposites with tunable negative permittivity have aroused widespread attention because of their distinctive properties and broad potential prospects. It is indicated that an enormously negative permittivity with a large value is not conducive to performance optimizing and impedance matching. In this article, the 2D Mxene Ti 3 C 2 T x was selected as the conductive phase instead of metal and carbon materials to fabricate Ti 3 C 2 T x /poly(vinylidene fluoride) metacomposites. The results of dielectric properties indicated that the conductive Ti 3 C 2 T x networks were formed by Ti 3 C 2 T x contacting with each other near the percolation threshold (ƒ c ). The as-obtained metacomposites containing 75 wt% Ti 3 C 2 T x generated percolating phenomenon. Additionally, when the fraction of Ti 3 C 2 T x was below ƒ c , the frequency dispersion behaviors of conductivity were in accordance with the Jonscher's power law, which proved that conducting mechanism was dependent on hopping conduction. While above ƒ c , the conductivity conformed to the Drude model and Lorentz model, which demonstrated a conductive behavior. Furthermore, the real part of permittivity transformed to negative value at 75 wt%, which can be explained as the existence of the low-frequency plasma oscillation and electric-dipole-induced resonance. The dielectric loss of the metacomposite was also analyzed by the imaginary permittivity spectra. Small negative permittivity values in the range of −550 to −400 were observed, owing to the low free carrier concentration in composites. The appearance of weakly negative permittivity opened up a new direction in negative dielectric materials by 2D layered Ti 3 C 2 T x nanomaterials.

研究领域: 材料科学 · 电子工程
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CERAMICS INTERNATIONAL · 2022 · IF 5.532

A novel microwave dielectric ceramic La5Sn4O15 with medium-permittivity and low loss

Shucheng Liu,Xiaoqing Chen,Pengcheng Zhang,Quanzhang Wen,Linzhao Ma,Hao Li

A novel low-loss La 5 Sn 4 O 15 ceramic is fabricated via traditional solid-state route. The investigation mainly focused on phase composition, dielectric characteristics and crystalline from 1300 to 1400 °C. The XRD analyses confirmed the La 5 Sn 4 O 15 ceramic is consisted of cubic and hexagonal structure. The effects of relative density on the Q × f and permittivity are also investigated. The satisfactory properties (ε r of 17.4, Q × f of 84,760 GHz and τ f of −19.08 ppm/°C) are obtained at optimum sintering condition (sintered at 1350 °C for 4 h), indicating La 5 Sn 4 O 15 ceramic is a promising ceramic for using in wireless applications region.

CAS / MDL: 1312-81-8 18282-10-5
研究领域: 材料科学 · 电子工程
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JOURNAL OF ALLOYS AND COMPOUNDS · 2025 · IF 6.3

Ca3(Co1/6Cu1/6Mg1/6Zn1/6Ni1/6Mn1/6)2SiV2O12: Novel high-entropy garnet-type ceramics with low permittivity and exceptional temperature stability

Junxian Wang,Yuxuan Ren,Xiangkai Zhu,Yunfeng Guo,Jiamao Li

In this paper, novel Ca 3 (Co 1/6 Cu 1/6 Mg 1/6 Zn 1/6 Ni 1/6 Mn 1/6 ) 2 SiV 2 O 12 (CRSV) ceramics were designed, aiming to obtain low permittivity (ε r ), high quality factor ( Q × f ) and exceptional temperature stability through high-entropy strategy. The simultaneous occupation of the B-site by six cations in garnet structure resulted in higher conformational entropy, which contributed to reducing the sintering temperature and obtaining exceptional temperature stability for CRSV ceramics. Every ceramic sample exhibited a cubic garnet structure with the Ia - 3d space group, as demonstrated by X-ray diffraction (XRD) analysis along with Rietveld refinement . The relative density and grain size of CRSV ceramic samples first increased and subsequently decreased with rising sintering temperature. The ε r showed a strong correlation with the relative density, while the change trend of the Q × f was opposite to that of the full width at half maximum (FWHM) observed in Raman spectra. However, the τ f did not show a strong temperature dependence. Typically, exceptional microwave dielectric properties of ε r = 11.0, Q × f = 63,300 GHz, τ f = -13.7 ppm/°C were obtained for CRSV ceramics sintered at 1050 °C. Meanwhile, the ceramics exhibited a Vickers hardness of 5.65 GPa and a fracture toughness of 1.10 MPa‧m 1/2 . The current work demonstrates that the high-entropy engineering is a promising pathway to develop high-performance microwave dielectric ceramics for practical applications.

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Advanced Composites and Hybrid Materials · 2018 ·Vol. 1 ·期 3 ·548-557 · IF 0

Improved dielectric permittivity and retained low loss in layer-structured films via controlling interfaces

Mao Fan,Shi Zhicheng,Wang Jing,Zhang Chao,Yang Chaoqiang,Huang Minghua

The search for high-performance dielectric materials has long been driven by the urgent needs for various modern electronics. However, enhanced permittivity is always accompanied by elevated loss, which seriously hinders the development and applications of dielectric materials. Herein, negative- k layers were introduced into layer-structured films, forming a new class of multilayer composites consisting of alternately stacked positive- k and negative- k layers. Compared with traditional multilayer composites without negative- k layers, the layered composites containing extra positive- k /negative- k interfaces exhibit superior ability in balancing the contradict parameters: permittivity and loss, yielding substantially enhanced permittivity without sacrificing the low loss. It is indicated that the permittivity was enhanced by the charge accumulations and reinforced polarizations on the interfaces between positive- k and negative- k layers. Meanwhile, the loss induced by the leakage current was suppressed by the blocked transport of carriers between adjacent layers. The trilayered 60-3.5-60 composite exhibits an enhanced dielectric constant ( ε ′ ≈ 33 @10 kHz) and retained low loss (tanδ ≈ 0.12 @10 kHz) compared with the single-layer BT/PVA composite containing 60 wt% BT fillers ( ε ′ ≈ 9.5 @10 kHz, tanδ ≈ 0.075 @10 kHz). This research offers an effective way to design and fabricate novel high-performance dielectric materials. Improved dielectric permittivity and retained low loss were obtained in layer-structured films via adjusting interfaces.

研究领域: 材料科学 · 电子工程
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MATERIALS CHEMISTRY AND PHYSICS · 2020 · IF 3.408

Influence of SiO2-adding on microstructure and dielectric properties of (In0.5Nb0.5)0.05Ti0.95O2 ceramics

Panpan Xu,Yupeng Wang,Wentao Hao,Li Sun,Ensi Cao,Yongjia Zhang

(In 0.5 Nb 0.5 ) x Ti 1-x O 12 (INTO) ceramics exhibit the unusual dielectric properties of giant dielectric constant and good stabilities, but their low-frequency dielectric loss is relatively large, and the sintering temperature is too high, which are very disadvantageous for practical applications. According to internal barrier layer capacitance effect, which seems to be the most plausible mechanism of the unusual dielectric properties , constructing insulating phase boundaries in INTO ceramics is an effective way to reduce their low-frequency dielectric loss. In this paper, SiO 2 was added to INTO ceramics, because, on the one hand, the insulating phase boundaries could be constructed by SiO 2 , on the other hand, SiO 2 could play the role of sintering agent to reduce the sintering temperature. Therefore, the SiO 2 /INTO ceramics were prepared by solid-state reaction, and their crystalline structures, microstructures, and electrical properties were analyzed. Compared to previous reports, the low-frequency dielectric loss of SiO 2 /INTO ceramics after annealing, which were sintered at a lower temperature of 1300 °C for a shorter time of 5 h, decreases substantially. The reason was discussed.

研究领域: 材料科学 · 电子工程
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COMPOSITES COMMUNICATIONS · 2025 · IF 7.7

Low dielectric constant and ultra-low dielectric loss poly(arylene ether nitrile)/octaphenyl-POSS composite films with dual cross-linked networks

Zhixuan Zhang,Tong Cao,Hanrong Wu,Ailin Peng,Lifen Tong,Xiaobo Liu,Yumin Huang

The continuous progress of microelectronic technology requires polymer materials with low dielectric constant, low dielectric loss, excellent mechanical properties and heat stability. As an emerging advanced polymer, poly(arylene ether nitrile) has shown great potential in the field of microelectronics. However, there is still a need to decrease its inherent dielectric constant and dielectric loss. In this work, the cross-linked poly(arylene ether nitrile) containing propenyl and trifluoromethyl groups (PEN) was designed and synthesized. Then the cage-like structure of octaphenyl polyhedral oligomeric silsesquioxane (OPOSS) was introduced to prepare the composite membranes by solution-casting method. After undergoing thermal treatment, dual cross-linked networks were formed, with OPOSS securely embedded within them. The results show that the composite films exhibit significantly enhanced heat stability (T 5%  ≥ 491 °C), tensile strength (≥72 MPa) and remain great hydrophobicity (106.6–114.2°). More importantly, among all the composite films, the dielectric constant and dielectric loss of the CPEN/OPOSS-8 composite film are as low as 2.19 and 0.0025 at 1 MHz, respectively. Such excellent comprehensive performance, especially in low dielectric constant while obtaining ultra-low dielectric loss, will make it possible to be used as a low dielectric material. This strategy will open up a new way of thinking for the development of low dielectric materials.

研究领域: 材料科学 · 高分子化学 · 微电子技术
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ACS Applied Polymer Materials · 2025 · IF 4.7

High Performance Polyimide Films with Low Dk and Low Df at 10 GHz via Cross-Linking of Bulky Pendant Groups

Shiying Qi,Shuo Han,Jianhao He,Jianchao Jiang,Chi Zhang,Jun Wang,Fei Xiao,Yuanrong Cheng

Herein, an effective design strategy is utilized to simultaneously reduce two difficult-to-reconcile indexes in polyimide (PI): the dielectric constant (Dk) and dielectric loss (Df). It is realized by the synthesis of cross-linked PIs using a bulky and cross-linkable diamine, (4,4′-(4-(4-(2,3,5,6-tetrafluoro-4-vinylphenoxy)phenyl)pyridine-2,6-diyl)dianiline) (TFVPPDA), featuring bulky triphenylpyridine and cross-linkable tetrafluorostyrol pendant groups. And copolymerized with 2,2′-bis(trifluoromethyl)benzidine (TFDB) and 4,4′-(hexafluoroisopropylidene) diphthalic anhydride (6FDA) to synthesize cross-linkable PIs (co-FPIs: co-FPI-10, co-FPI-20, and co-FPI-30) with varying TFVPPDA content. Then, cross-linked PIs (co-FPIs-CL: co-FPI-10-CL, co-FPI-20-CL, and co-FPI-30-CL) were obtained by thermal cross-linking reactions. The cross-linked PIs with cross-linked networks possess more free volume compared with the corresponding uncured PIs, thus further reducing the Dk. Additionally, cross-linked networks restrict the deflection of polar imide groups in the polymer chain, leading to a relatively low Df. More importantly, this design strategy effectively retains the excellent thermal, mechanical, and low moisture absorption properties of the PIs. Notably, co-FPI-30-CL has a low Dk (2.50) and Df (0.0060) at a high frequency of 10 GHz, a glass transition temperature (Tg) of 384 °C, a 5 wt % decomposition temperature (Td5%) of 566 °C, a low coefficient of thermal expansion (CTE) of 41.5 ppm/°C, a high tensile strength (σmax) of 123.3 MPa, and a low moisture absorption rate (Wa) of 0.11%.

CAS / MDL: 1107-00-2
研究领域: 材料科学 · 电子工程
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EUROPEAN POLYMER JOURNAL · 2024 · IF 5.8

Low dielectric constant and dielectric loss quinoxaline-based poly (aryl ether)s with excellent solubility, hydrophobic and thermal properties

Jingwei Jiang,Yunlong Sun,Zhipeng Wang

With the rapid growth of 5G communication technology, low-dielectric materials can decrease the loss of the signal during transmission. Hence, there is an urgent need to develop high-performance materials with low dielectric constant (D k ) and dielectric loss (D f ) at high frequency. In this study, we propose a strategy that combines bulk rigid quinoxaline structure and low polarizability trifluoromethyl group to prepare poly (aryl ether)s (PAEs) with low D k and D f at high frequencies. The effect of methyl substituents on the properties of PAEs was focuses on investigated. Accordingly, three difluoro-monomers containing quinoxaline structures were designed and prepared and novel quinoxaline-based PAEs with different numbers of methyl substituents were synthesized by nucleophilic condensation reactions with the bisphenol monomer hexafluorobisphenol A (BP6F). Test results that the resultant PAEs exhibited excellent thermal and solubility properties, with 5 % thermal decomposition temperatures ( T d5% ) in the range of 500−515 °C and glass transition temperatures ( T g ) reaching 225 °C. Furthermore, these PAE films show outstanding optical transparency, with cut-off wavelengths of 398−400 nm and above 87 % transmission at 800 nm. Most importantly, the novel PAE films possess ultra-low D k and D f , with the lowest values reaching 2.45 and 0.0024 at 10 GHz and maintain low water absorption (0.53–0.63 %). The excellent properties of novel quinoxaline-based PAEs provide its application potential in the field of high-frequency communications.

CAS / MDL: 1478-61-1
研究领域: 材料科学 · 高分子化学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2018 · IF 3.779

Cerium doped strontium titanate with stable high permittivity and low dielectric loss

Junlei Qi,Minghe Cao,Yiying Chen,Zichen He,Chen Tao,Hua Hao,Zhonghua Yao,Hanxing Liu

High permittivity materials continue to arouse considerable interest due to their applications in the field of high performance capacitors. However it is still a challenge to make material both with stable high permittivity and low dielectric loss. Here, the Sr 1-3x/2 Ce x TiO 3 (SCT) ceramics are synthesized via solid-state reaction process and sintering in air. The sample (x = 0.01) exhibits a high permittivity of ∼7000 and low dielectric loss of ∼0.007 at room temperature and 1 kHz. Moreover, the dielectric properties are stable over a very broad temperature and frequency range. Further investigations reveal that the high permittivity is related to the defect chemistry caused by the trace Ce ions doping. The Ti 3+ ions substitute the Ti 4+ ions lead to the Ti-O octahedral off-center, which make a certain contribution to improve the permittivity. The low dielectric loss is owing to the fact that the defects are more likely to be in the form of defect clusters in the Ce doped SrTiO 3 monophase solid solutions. The appropriate defect chemistry design suppresses the dielectric loss relaxation peak of Sr 1-x Ce x TiO 3 (x = 0.01) caused by the motion of oxygen vacancies .

CAS / MDL: 9002-89-5
研究领域: 材料科学 · 电子材料
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