Dielectric polymers with high thermal conductivity are very promising in the fields of aerospace and electronic device packaging. However, composites with excellent dielectric properties usually have low thermal conductivity. It is usually to fill the polymer with thermal conductivity particles to improve the thermal conductivity, but the high content of filler often reduces the mechanical properties of the polymer. In this paper, the traditional insulating polymer epoxy resin was used as the matrix, by covering the surface of silicon carbide with graphene to form a core-shell structure and co-filled with nano diamonds to achieve the preparation of high-performance epoxy resin at low content. The results showed that at the filling content of 30 wt%, the thermal conductivity of epoxy nanocomposites showed a dramatic thermal conductivity enhancement of 1263%, the energy storage modulus increased by 1.1 GPa, and the dielectric loss remained unchanged at 50 Hz. The advantages of the composite are the structural design and surface modification of the filler, which not only take advantage of its inherent advantages, but also improve the interface area with the epoxy matrix. The composite materials with excellent properties are expected to provide theoretical guidance for the application of high thermal conductivity dielectric materials.
Hui Zhao,Si-Qi Zhao,Guo-Hua Hu,Qun-Chao Zhang,Yang Liu,Chong-Xing Huang,Wei Li,Tao Jiang,Shuang-Fei Wang
A facile method was developed to synthesize a new type of polyhedral oligomeric silsesquioxane (POSS). It contained a single amine group and seven aliphatic moieties on its corners. FT-IR, 1 H-NMR, 13 C-NMR, 13 C- 1 H COSY, and 1 H- 1 H COSY confirmed that cages with eight corners were the main part of the product. This new POSS was used to modify the structure of hexamethylene diisocyanate trimer and then copolymerized with hexamethylene diisocyanate and poly (tetramethylene glycol) to get a serious of waterborne polyurethane (WPU)/POSS hybrid materials with low dielectric constants for microelectronics applications. The results showed that POSS particles were uniformly dispersed in the WPU dispersions. The WPU/POSS films did not show any macrophase separation, even when the POSS content was as high as 16%. As the POSS content increased from 0% to 16%, the tensile strength was increased from 2.3 to 7.3 MPa, the dielectric constant was decreased from about 2.9 to 2.0, and the thermal stability of the WPU/POSS was also improved.
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