Laser & Photonics Reviews
·
2025
·
IF 10
Jun Gou,Xiutao Yang,Hang Yu,He Yu,Yuchao Wei,Ziyi Fu,Laijiang Wei,Zexu Wang,Jiayue Han,Zhiming Wu,Yadong Jiang,Jun Wang
Conventional nm-scale Bi 2 O 2 Se-based near-infrared (NIR) photodetectors (PDs) exhibit commendable performance in terms of responsivity and response speed. Currently, the growing complexity of application scenarios requires NIR PDs to possess not only these fundamental functionalities but also the capability for NIR polarization detection and operation well under dim light conditions. Here, this study proposes the 2D ReS 2 /3D Bi 2 O 2 Se homo-heterojunction PD, which exhibits high photo-response speed, polarization-sensitive detection capabilities, and enhanced sensitivity in the NIR spectrum. In detail, a device constructed from µm-thick Bi 2 O 2 Se demonstrates polarization-sensitive photodetection at a wavelength of 850 nm, exhibiting a polarization ratio of 1.4 achieved by applied voltage modulation. Based on photogating effect and strong intrinsic absorption, the homo-heterojunction PD also can detect light power level of nW at 1310 nm, with a response speed of ≈10 µs and responsivity of 34.8 A W −1 at this wavelength. Additionally, this configuration exhibits an outstanding specific detectivity exceeding 10 10 Jones within the wavelength range of 700 to 1310 nm. Even at a cut-off wavelength of 1550 nm, the device achieves a specific detectivity of ≈10 9 Jones. The ReS 2 /Bi 2 O 2 Se heterojunction NIR PD shows promise for advanced optoelectronic applications due to its high sensitivity and polarization-sensitive photodetection in NIR band.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Jinqian Zhang,Jun Liu,Yue Tian,Jiawen Guo,Wenjie Kong,Lizhen Long
Two-dimensional (2D) materials have emerged as promising candidates for photodetection applications, due to their unique structural and optical properties. Herein, we conducted a comprehensive investigation of the 2D Te-based photodetector. The crystal structure, angle-resolved polarized Raman (ARPR) spectroscopy, and theoretical analysis demonstrate the in-plane lattice anisotropy of Te, underlining its suitability for polarization-dependent photodetection. Photocurrent measurements over a broad spectral range (from 365 to 1310 nm) reveal excellent photoresponse characteristics, with responsivity ( R λ ) and detectivity ( D* ) values reaching up to 1189 A/W and 11.51 × 10 8 Jones, respectively, under 1064 nm illumination. Furthermore, the Te-based photodetector exhibits superior stability, retaining approximately 90 % of its initial performance after six months of ambient exposure. Polarization-sensitive photodetection experiments show significant dichroism ratios (up to 4.6 for 1064 nm illumination), emphasizing the potential of 2D Te for advanced polarization applications. The combination of the broad spectral response, high anisotropy ratio, and long-term stability positions 2D Te as a promising candidate for future photodetection technologies.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
Advanced Materials Interfaces
·
2021
·Vol. 9
·期 2
·2101504
·
IF 6.147
Yi Jia,Hui Deng,Xiao Lin,Shenzhong Chen,Yong Xia,Zhixu Wu,Jinling Yu,Shuying Cheng,Yunfeng Lai
Antimony sulfide (Sb 2 S 3 ) with high absorption coefficient reveals great potential for photodetectors (PDs) in various fields of military and national economy. A new type of depleted Sb 2 S 3 thin film photoconductive detector by using titanium dioxide (TiO 2 ) interlayer with the structure of Au/(glass/TiO 2 :)Sb 2 S 3 /Au is designed. Compared with normal Au/Sb 2 S 3 /Au devices, the depleted Sb 2 S 3 PDs obtain a higher switching ratio of 90, greatly enhancing responsivity and specific detectivity. Owing to the electric field of the depletion region, the response time significantly decreases from 23.2 to 0.6 ms. In addition, the anisotropic Sb 2 S 3 film with [120] dominated horizontal orientation is suitable for polarized light detection. The peak-to-valley ratio of the depleted Sb 2 S 3 PD reaches 1.3 at polarized light. The results and methods of this study are expected to expand the application of PDs based on Sb 2 S 3 films.
研究领域:
材料科学
·
光电探测
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2025
·Vol. 16
·期 1
·1-12
·
IF 15.7
Yang Yaqian,Ran Wenhao,Li Ying,Chen Yancheng,Chen Di,Shen Guozhen
Biological vision system-inspired optoelectronic synapses integrate sensing, memory, and processing for external information perception. However, most efforts focus on spatial expansion while overlooking critical dimensions like polarization and temporal evolution, which are critical for information extraction in complex environments. Inspired by the polarization-sensitive properties of kingfisher vision, we develop a polarization-sensitive optoelectronic synapse array device based on PEA 2 SnI 4 microwires array. Their anisotropic properties ensure polarization recognition, achieving a dichroic ratio of 1.38. And the asymmetric electrode designs create differentiated contact barriers, facilitating efficient charge storage and erasure under low power consumption. By employing four polarization-state-dependent convolutional kernels, the device demonstrates edge extraction capabilities even under 50% salt pepper noise. Furthermore, it enables high-precision in-sensor reservoir computing, with 100% accuracy in extracting fish trajectories under complex light environments. This work demonstrates motion perception in complex environments and provides a foundation for developing multi-dimensional, time-resolved visual systems for intelligent sensing and recognition.
研究领域:
神经形态工程
·
光电子学
·
人工智能
·
传感器技术
·
材料科学
·
计算机视觉
·
信息处理
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small
·
2023
·Vol. 19
·期 43
·2302623
·
IF 13.3
Yubin Li,Shiyao Wang,Jinhua Hong,Nannan Zhang,Xin Wei,Tao Zhu,Yao Zhang,Zhuo Xu,Kaiqiang Liu,Man Jiang,Hua Xu
Bismuth chalcohalides (BiSeI and BiSI), a class of superior light absorbers, have recently garnered great attention owing to their promise in constructing next-generation optoelectronic devices. However, to date, the photodetection application of bismuth chalcohalides is still limited due to the challenge in controllable preparation. Herein, the synthesis of large-scale quasi-1D BiSeI nanowires via chemical vapor deposition growth is reported. By precisely tuning the growth temperature and the Se supply, it can effectively control the growth thermodynamics and kinetics of BiSeI crystal, and thus achieve high purity quasi-1D BiSeI nanowires with high crystal quality, uniform diameter, and tunable domain length. Theory and optical characterizations of the quasi-1D BiSeI nanowires reveal an indirect bandgap of 1.57 eV with prominent optical linear dichroism. As a result, the quasi-1D BiSeI nanowire-based photodetector demonstrates a broadband photoresponse (400–800 nm) with high responsivity of 5880 mA W −1 , fast response speed of 0.11 ms and superior air stability. More importantly, the photodetector displays strong polarization sensitivity (anisotropic ratio = 1.77) under the 532 nm light irradiation. This work will provide important guides to the synthesis of other quais-1D metal chalcohalides and shed light on their potential in constructing novel multifunctional optoelectronic devices.
研究领域:
材料科学
·
光学工程
·
半导体物理
✓ 已验证
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2023
·Vol. 35
·期 26
·2212118
·
IF 29.4
Dingdong Xie,Ge Gao,Bobo Tian,Zhiwen Shu,Huigao Duan,Wei-Wei Zhao,Jun He,Jie Jiang
Visual adaptation allows organisms to accurately perceive the external world even in dramatically changing environments, from dim starlight to bright sunlight. In particular, polarization-sensitive visual adaptation can effectively process the polarized visual information that is ubiquitous in nature. However, such an intriguing characteristic still remains a great challenge in semiconductor devices. Herein, a novel porous metal–organic-framework phototransistor with anisotropic-ReS 2 -based heterojunction is demonstrated for polarization-sensitive visual adaptation emulation. The device exhibits intriguing polarized sensitivity and an adaptive ability due to its strong anisotropic and trapping–detrapping characteristics, respectively. A series of polarization-sensitive neuromorphic behaviors like polarization-perceptual excitatory postsynaptic current, multimode adjustable dichroic ratio and reconfigurable sensory adaption, are experimentally demonstrated through this porous heterojunction phototransistor. More importantly, with the polarization–electricity cooperation strategy, advanced polarization-sensitive visual adaptation with strong bottom-gate control and environment dependence is successfully realized. These results represent a significant step toward the new generation of intelligent visual perception systems in autonomous navigation and human–machine interaction, etc.
研究领域:
材料科学
·
光电技术
·
仿生学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2022
·Vol. 10
·期 47
·18063-18068
·
IF 8.067
Zhou Li,Qin Chen,Ziyang Wang,Yipeng Fan,Tingting Zhu,Chengmin Ji,Xiaojun Kuang,Junhua Luo
Two-dimensional (2D) lead-based hybrid perovskites with highly intrinsic anisotropy and entertaining semiconductor properties are well suited for polarization-sensitive photodetection. Nonetheless, their chemical instability and environmental hazards hinder their further application. Recenly, 2D double perovskites have received much attention as excellent green alternatives to lead-based perovskites. However, the application of 2D double perovskite in broad-spectrum polarization-sensitive detection has not been explored. In this work, we first grew centimeter-sized crystals (11 × 3 × 1 mm3) of 2D hybrid double perovskite (IPA)4AgBiI8 (IPA is iodopropylamine) with narrow bandgap of Eg = 1.87 eV. Remarkably, the single-crystal photodetectors of (IPA)4AgBiI8 show broad-spectrum polarization-sensitive response, even at 660 nm, with a large dichroism ratio (Iphc/Iphb ≈ 1.23), a large detectivity up to ∼1010 Jones, and a relatively rapid response time (∼450 μs). All these outstanding features combine to produce (IPA)4AgBiI8, an excellent polarized photodetector material. This work introduces a novel 2D hybrid double perovskite material for broad-spectrum polarization-sensitive photodetection.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
OPTICAL MATERIALS
·
2023
·
IF 3.9
Ziheng Wang,Xueying Chu,Jinhua Li,Zhankun Weng,Mingze Xu,Yingjiao Zhai,Li Ma,Xiaojun Wang
The polarization-sensitive optical properties of semiconductor nanorods (NRs) are attractive characteristics for optical devices . Although oriented NR films can provide convenient integration and new application opportunities, the realization of large-area NR films with polarized photoluminescence (PL) remains a challenge. Herein, we fabricated ordered CdSe/CdS NR films on an arbitrary substrate using the Langmuir-Blodgett technology. Polarization-sensitive PL was observed for the NR films. The band-edge exciton fine structure owing to the rod-like morphology and the dielectric effect of the orderly arranged NRs were discussed with a focus on the contribution to polarized photons. The degree of linear polarization of the CdSe/CdS NR films excited a circularly polarized light was approximately 0.30. When linearly polarized ultraviolet (UV) light was used as the excitation source, the PL intensity of the NR films periodically varied with the polarization direction of the UV light. The corresponding PL polarization (i.e., “excitation polarization”) was approximately 0.28. The polarization-sensitive fluorescence (approximately 526 nm) excited by the UV-polarized light (325 nm) demonstrates the potential for realizing low-cost polarization-sensitive devices using only a visible light charge-coupled device system.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
Nature Communications
·
2022
·Vol. 13
·期 1
·1-11
·
IF 17.694
Pan Jing,Wu Yiming,Zhang Xiujuan,Chen Jinhui,Wang Jinwen,Cheng Shuiling,Wu Xiaofeng,Zhang Xiaohong,Jie Jiansheng
Being able to probe the polarization states of light is crucial for applications from medical diagnostics and intelligent recognition to information encryption and bio-inspired navigation. Current state-of-the-art polarimeters based on anisotropic semiconductors enable direct linear dichroism photodetection without the need for bulky and complex external optics. However, their polarization sensitivity is restricted by the inherent optical anisotropy, leading to low dichroic ratios of typically smaller than ten. Here, we unveil an effective and general strategy to achieve more than 2,000-fold enhanced polarization sensitivity by exploiting an anisotropic charge trapping effect in organic phototransistors. The polarization-dependent trapping of photogenerated charge carriers provides an anisotropic photo-induced gate bias for current amplification, which has resulted in a record-high dichroic ratio of >10 4 , reaching over the extinction ratios of commercial polarizers. These findings further enable the demonstration of an on-chip polarizer-free bionic celestial compass for skylight-based polarization navigation. Our results offer a fundamental design principle and an effective route for the development of next-generation highly polarization-sensitive optoelectronics.
研究领域:
材料科学
·
光学工程
·
仿生学
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2023
·Vol. 9
·期 11
·2300392
·
IF 6.2
Guangliang Li,Lingxian Kong,Qi Su,Xianhua Tan,Xuning Zhang,Zhiyong Liu,Tielin Shi,Guanglan Liao,Bo Sun
Few-layer black phosphorus (FL-BP) shows great potential in infrared polarization-sensitive photodetection due to its narrow bandgap and strong in-plane anisotropy. However, FL-BP is easy to be oxidized and degraded, which severely restricts its applications. Herein, a simple and scalable in situ interfacial passivation method based on pentacene film is reported to enhance the ambient stability of FL-BP as well as achieve n-type doping for improved polarization-sensitive photoimaging. High crystal quality FL-BP flakes with intrinsic anisotropy are prepared by electrochemical exfoliation. The morphology and Raman spectra of FL-BP/pentacene exhibit excellent stability 28 days after passivation. In addition, the hole mobility is significantly enhanced and dark current is substantially suppressed due to the interfacial passivation and n-type doping effect. The FL-BP/Pentacene based photodetector shows a broadband response from visible to near-infrared with good stability. The photoresponsivity under 915 nm illumination is calculated as 2.2 mA W −1 with an anisotropy ratio of 1.29. Furthermore, the polarization imaging under the irradiation at zigzag and armchair directions directly reveals the strong infrared polarization-sensitive imaging capability of FL-BP/pentacene. This work also opens up new avenues to enhance the photoresponse and stability of various optoelectronics based on similarly unstable 2D materials.
研究领域:
纳米材料学
·
光电子学
·
二维材料
·
半导体物理
·
红外成像
·
表面科学
✓ 已验证
DOI
高影响因子
Materials Horizons
·
2022
·Vol. 9
·期 5
·1479-1488
·
IF 15.717
Can Zou,Qing Liu,Kai Chen,Fei Chen,Zixuan Zhao,Yunxuan Cao,Congcong Deng,Xingfu Wang,Xiaohang Li,Shaobin Zhan,Fangliang Gao,Shuti Li
Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu2I3 dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and −3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu2I3/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.
研究领域:
材料科学
·
光学工程
·
电子器件
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2019
·Vol. 29
·期 38
·1904416
·
IF 15.621
Huai Yang,Longfei Pan,Xiaoting Wang,Hui-Xiong Deng,Mianzeng Zhong,Ziqi Zhou,Zheng Lou,Guozhen Shen,Zhongming Wei
Mixed-valence states can bring unexpected unique phenomena, especially novel anisotropic physics, due to structural asymmetry, which originate from the discrepant distribution of atoms with different valence. This study reports an unexploited mixed-valence-driven quasi-1D Sn II Sn IV S 3 crystal, which exhibits widely and distinctively anisotropic polarized-light absorption reaching ≈3.4 from the deep ultraviolet to near-infrared region (250–850 nm). The fabricated polarization-sensitive photodetectors based on highly air-stable Sn II Sn IV S 3 nanowires display strong linear dichroism among the UV–vis–NIR spectrum with responsivity exceeding ≈150 A W −1 . Furthermore, the devices are further constructed onto a flexible polyethylene terephthalate (PET) substrate and the photoresponse remains roughly unchanged after repeated bending. This work based on novel mixed-valence-driven quasi-1D ternary sulfide Sn II Sn IV S 3 excites interest in low-symmetry semiconductors for developing broadly spectral polarization-sensitive photodetectors with environmental stability and mechanical flexibility.
研究领域:
材料科学
·
半导体物理
·
纳米光学
·
光电子学
·
凝聚态物理
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）