Qing-Ying Yang,Qin Yang,Yi-Fan Song,An-Wen Liu,Jin Wang,Yan Tan,Yu R. Sun,Shui-Ming Hu
Cyclohexane (CAS: 110-82-7), a colorless organic solvent derived from petroleum, is a valuable reference standard for Raman shift calibration and serves as a model for six-membered ring structures in complex chemical and biological systems. In this study, we measured polarized Raman spectra of gaseous cyclohexane at room temperature using cavity-enhanced Raman spectroscopy (CERS) across the range of 200–3200 cm–1. The observed vibrational wavenumbers, intensities, and depolarization ratios were compared with calculated values, enabling the assignment of several dozen Raman-active bands, including many overtone and combination bands. This work demonstrates the capability of CERS for vibrational analysis of gas-phase polyatomic molecules.
Miniaturized polarimetric photodetectors based on anisotropic two-dimensional materials attract potential applications in ultra-compact polarimeters. However, these photodetectors are hindered by the small polarization ratio values and complicated artificial structures. Here, a novel polarization photodetector based on in-sublattice carrier transition in the CdSb 2 Se 3 Br 2 /WSe 2 heterostructure, with a giant and reconfigurable PR value, is demonstrated. The unique periodic sublattice structure of CdSb 2 Se 3 Br 2 features an in-sublattice carrier transition preferred along Sb 2 Se 3 chains. Leveraging on the in-sublattice carrier transition in the CdSb 2 Se 3 Br 2 /WSe 2 heterostructure, gate voltage has an anisotropic modulation effect on the band alignment of heterostructure along sublattice. Consequently, the heterostructure exhibits a polarization-tunable photo-induced threshold voltage shift, which provides reconfigurable PR values from positive (unipolar regime) to negative (bipolar regime), covering all possible numbers (1→+∞/−∞→−1). Using this anisotropic photovoltaic effect, gate-tunable polarimetric imaging is successfully implemented. This work provides a new platform for developing next-generation highly polarimetric optoelectronics.