Materials
·
2023
·Vol. 16
·期 6
·2331
·
IF 3.4
Lifei Liu,Jintong Li,Ting Song,Rong Wu,Weizhen Zhao,Feng Huo
Acrylate photoresists have gained considerable attention in recent years owing to their high resolution, high sensitivity, and versality. In this work, a series of thermally stable copolymers are synthesized by introducing an isobornyl group, and well characterized using Fourier transform infrared spectroscopy (FT-IR) and nuclear magnetic resonance spectra (1H-NMR). The effects of polymerization conditions on the molecular weight and their further influence on lithography are explored. By analyzing the thermal properties, film-forming capabilities, and the patterning behavior of these copolymers, a direct correlation between lithography performance and polymerization conditions is established via the molecular weight. In addition, the baking temperature of lithography is also optimized by atomic force microscopy (AFM), after which a line resolution of 0.1 μm is observed under the exposure of a 248 nm UV light and electron beam. Notably, our synthesized photoresist displays dual-tone resist characteristics when different developers are applied, and the reaction mechanism of acid-catalyzed hydrolysis is finally proposed by comparing the structural changes before and after exposure.
研究领域:
材料科学
·
化学工程
·
纳米技术
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产品关联
DOI
PubMed
高影响因子
CHEMICAL RESEARCH IN CHINESE UNIVERSITIES
·
2015
·Vol. 31
·期 4
·585-589
·
IF 0.875
Wei Qi,Wang Liyuan
Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoactive compound was obtained by the esterification of tannic acid with 2-diazo-1-naphthoquinone-4-sulfonyl chloride(2,1,4-DNQ-Cl) and ditertbutyl dicarbonate. The new obtained compound possessed both a photosensitive group of diazonaphthoquinone sulfonate(2,1,4-DNQ) and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The experimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.
研究领域:
材料科学
·
微纳加工
·
高分子化学
·
光电子学
·
半导体工艺
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2012
·
IF 4.525
Jinxing Yu,Na Xu,Zhengping Liu,Liyuan Wang
Maleopimaric acid, cycloaddition reaction product of rosin with maleic anhydride, was reacted with hydroxylamine to afford N-hydroxy maleopimarimide, which was then further esterified with 2-diazo-1-naphthoquinone-4-sulfonyl chloride (2,1,4-DNQ-Cl) to give N-hydroxy maleopimarimide sulfonate. The carboxylic acid group of the compound was then protected by the reaction of this compound with vinyl ether compounds to give the corresponding molecular glass compounds. Upon irradiation to 365 nm light, the 2,1,4-DNQ group undergo photolysis not only to be converted into indene carboxylic acid but also generate a few amount of sulfonic acid which can catalyze the deprotection of the acid labile group. So, novel one-component positive-tone chemically amplified i-line photoresists can be formed by the molecular glass compounds. The lithographic performance of the resists was evaluated using i-line exposure system with high photosensitivity and resolution.
研究领域:
材料科学
·
光刻技术
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产品关联
DOI
PubMed
高影响因子
CHINESE SCIENCE BULLETIN
·
2014
·Vol. 59
·期 11
·1097-1103
·
IF 1.365
Liu Juan,Liu Zhengping,Wang Liyuan,Sun Haiyan
Calix[4]resorcinarene, prepared by the acid-catalyzed condensation of resorcinol and paraldehyde, was used as the core of the molecular glass compound. The hydroxyl groups of calix[4]resorcinarene were partly protected by tert-butoxycarbonyl ( t -BOC) and then esterified with 2-diazo-1-naphthoquinone-4-sulfonyl chloride (2,1,4-DNQ-Cl). Upon irradiation to 365 nm light, the 2,1,4-DNQ groups undergo photolysis to generate a small quantity of sulfonic acid other than indene carboxylic acid. The generated sulfonic acid can further catalyze the deprotection of the t -BOC group. So, a new type of single-component chemically amplified i-line positive photoresist can be formed by the molecular glass compounds. The lithographic performance of the resist was evaluated with high resolution and photosensitivity with an i-line stepper.
研究领域:
材料科学
·
化学工程
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DOI
高影响因子
JOURNAL OF POLYMER RESEARCH
·
2018
·Vol. 25
·期 9
·1-8
·
IF 1.434
Ji Changwei,Liu Jingcheng,Zheng Xiangfei,Liu Ren,Yuan Yan,Liu Xiaoya,Mu Qidao
Cholic acid is a class of biological compounds that exhibit valuable properties, and have been applied in many fields due to its special chemical structures for many areas. In this study, poly[(methacrylic acid tert-butyl cholate ester)- co -(acetoxy styrene)] [P(MATC- co -AS)] was synthesized from cholic acid, then the final copolymer poly[(methacrylic acid tert-butyl cholate ester)- co -(p-hydrostyrene)] [P(MATC- co -HS)] was obtained after P(MATC- co -AS) was hydrolysized. The structure and properties of the copolymers were determined through nuclear magnetic resonance, gel permeation chromatography, UV spectrometry, thermogravimetric analysis, and differential scanning calorimetry. The ultraviolet spectra of the copolymers indicate that they exhibit excellent optical transmittance at 248 nm. Moreover, the photolithography performance of a positive-tone photoresist based on the copolymers were evaluated using an KrF laser exposure system. The results indicate that a resolution of 0.25 μm could be achieved at a low exposure dose.
研究领域:
材料科学
·
生物化学
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产品关联
DOI
高影响因子
Science of Advanced Materials
·
2021
·Vol. 13
·期 4
·624-631
·
IF 1.474
Lin Jianyao,Chen Yu,Ye Yun,Xu Sheng,Guo Tailiang,Chen Enguo
We present a ligand-exchange-free photo-patternable quantum-dot photoresist (QDPR) with high photolithographic uniformity. The dispersion mechanism between the QD’s surface ligands and the functional groups of photoresist polymers are studied. Results show that the dispersibility
and photoluminescent intensity of this QDPR can be both improved by controlling dispersant and antioxidant. For device demonstration, multi-colored quantum dot color conversion films (QDCCF) were prepared and patterned by a photolithography process. High QD dispersibility and film-forming
uniformity were both achieved with this QDCCF. It is believed that the proposed QDPR has the potential to be extensively used in lighting or display applications.
研究领域:
材料科学
·
光学工程
·
显示技术
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DOI
高影响因子
POLYMER SCIENCE SERIES B
·
2014
·Vol. 56
·期 6
·855-862
·
IF 0.633
Li Hu,Liu Jingcheng,Lin Licheng,Mu Qidao,Sun Xiaoxia,Liu Xiaoya
tert -Butyl acrylate (TBA), benzyl methacrylate (BzMA) and acrylic acid (AA) were used to synthesize prepolymer (PTBA) with carboxyl pendant through free-radical polymerization. Glycidyl methacrylate (GMA) was then added to react with carboxylic acid group of PTBA to form UV-curable copolymer PTBA-G. Proton Nuclear magnetic resonance ( 1 H NMR) and Fourier transform infrared spectroscopy (FTIR) were used to confirm the structure and functional group of prepolymer and copolymer, GPC was employed to determine the molecular weight and polydispersity. Real-time infrared and photo differential scanning calorimetry (photo-DSC) were used to evaluate the UV-curable kinetics of copolymer, thermo-gravimetric analysis (TGA) showed the thermal stability of the copolymers increased as the GMA content increase. When the ratio of GMA and AA was 0.3, it showed excellent resolution of 50 μm by SEM observation.
研究领域:
材料科学
·
高分子化学
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DOI
高影响因子
Science Advances
·
2025
·Vol. 11
·期 29
·
IF 12.5
Ruihao Zhou,Muqing Cao,Yizheng Tan,Mark Neisser,Huaping Xu
Extreme ultraviolet (EUV) lithography has become the essence of advanced semiconductor manufacturing processes. While enabling smaller feature sizes, EUV lithography imposes increasingly stringent requirements on the comprehensive performance and stochastic defect suppression of photoresist. The widely recognized strategy to minimize these defects is a material that integrates high EUV absorption and energy utilization into a homogeneous system based on molecular building blocks—the ideal formulation for EUV photoresist. However, achieving these integrated characteristics within a single molecule has remained an unresolved challenge. Here, we address all these requirements by polytelluoxane using an organic telluride monomer polymerized via Te─O bonds. This polymeric photoresist, operating through a main chain scission mechanism, demonstrates high-performance positive-tone lithography. Attributed to this ideal formulation, our photoresist achieves a comprehensive 18-nm line width at a dose of 13.1 mJ/cm 2 with a line edge roughness of 1.97 nm. We believe that this strategy establishes a framework for the design of next-generation EUV photoresists.
研究领域:
半导体制造
·
材料科学
·
纳米技术
·
光刻技术
·
高分子化学
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产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2015
·Vol. 4
·期 3
·533-540
·
IF 4.696
Zhenzhen Cai,Baolong Wang,Yang Zheng,Ming Li,Yao Li,Changming Chen,Daming Zhang,Zhanchen Cui,Zuosen Shi
A series of novel thermo-optic (TO) polymers (AF-Z-PC EPs) were achieved and they could be mixed with photoinitiator in solvent and to produce the negative-type fluorinated photoresists (NFPRs). TO waveguide switch arrays were fabricated based on the direct UV-written technique using the NFPRs. As the core of waveguide materials, AF-Z-PC EPs were synthesized by solution polymerization with 4,4′-(hexafluoro-isopropylidene) diphenol (6F-BPA) and bisphenol Z (BPZ) with triphosgene (BTC) and further reacted with epoxy chloropropane. The refractive index of the polymers can be adjusted by controlling the content of BPZ. Through a simple lithography process, the NFPRs can be fabricated as the waveguide easily. The propagation loss of a 4 μm wide straight waveguide was only 0.19 dB cm−1 at 1550 nm. The insertion loss of the device was directly measured to be about 9.0 dB. The rise and fall times of the device applied 200 Hz square-wave voltage were obtained as 1.546 ms and 1.226 ms, respectively. The switching power was about 15.5 mW, and the extinction ratio was 13.0 dB. The low-loss integrated switch arrays are suitable for realizing large-scale photonic integrated circuits.
研究领域:
材料科学
·
光学工程
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产品关联
DOI
高影响因子
MICROELECTRONIC ENGINEERING
·
2024
·
IF 2.6
Xubin Guo,Huan Chen,Haihua Wang,Dong Wang,Qianqian Wang,Wenbing Kang
Transparent conductive films (TCFs) that converge high transmittance and high conductive properties are essential for many optoelectronic devices, and efforts have been made to acquire films with high transmittance as well as low resistance of the thin layer by low-cost means. Here, we introduce a novel and simple strategy for the controlled in-situ templated synthesis of a transparent conductive metal mesh by utilizing the good reducibility to silver ions of the patterned tannic acid (TA)-based photoresists. To achieve this, mesh patterns with tunable line width were first printed using the TA-based negative photoresists by laser direct writing equipment. Within the patterned domains, the phenolic hydroxyl groups could interact with metal ions and act as reducing agents, thus accelerating the in-situ growth of silver nanoparticles to fabricate silver grids. By changing the line width of the designed patterns and the PH of the plating solution, the metal grids with a high transmission ( T ) of 91.5% and a thin-layer resistance ( R s ) as low as 4.15 Ω sq. −1 are ultimately achieved after annealing treatment. Our description demonstrates a simple and effective approach that is potentially scalable to other materials as well.
研究领域:
材料科学
·
纳米技术
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产品关联
DOI
高影响因子
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
·
2018
·
IF 3.141
Xiangfei Zheng,Changwei Ji,Jingcheng Liu,Ren Liu,Qidao Mu,Xiaoya Liu
Xanthate-mediated reversible addition–fragmentation chain transfer (RAFT) methodologies have been applicable to preparation of branched or star polymers. In this article, novel star copolymers have been synthesized through xanthate-mediated RAFT polymerization with p-acetoxystyrene and tert-butyl acrylate. Fourier transfer infrared, nuclear magnetic resonance spectra, and gas chromatography analyses indicated that the polymerization was successful between both of the monomers and the star RAFT agent. The intrinsic viscosity and Zimm branching factor (g′) were used to confirm the copolymers’ architecture. The ultraviolet absorbance of the copolymer solutions indicated that the copolymer was suitable for use as a krypton fluoride (KrF) laser photoresist. Moreover, the photolithography performance of the positive-tone chemically amplified photoresist was evaluated. The results indicated that the photosensitive based on the star copolymer was higher than the linear one, and the pattern resolution was around 200 nm at a low exposure energy.
研究领域:
材料科学
·
高分子化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Nano
·
2021
·
IF 15.881
Wenfei Liu,Jiabao Wang,Xiuzhen Xu,Chuanzhen Zhao,Xiaobin Xu,Paul S. Weiss
Conventional photolithography, due to its scalability, robustness, and straightforward processes, has been widely applied to micro- and nanostructure manufacturing in electronics, optics, and biology. However, optical diffraction limits the ultimate resolution of conventional photolithography, which hinders its potential in nanoscale patterning for broader applications. Here, we introduce a derivative of conventional photolithography for nanoscale patterning called dual-layer photolithography (DLPL), which is based on the controlled exposure and development of overlapping positive and negative photoresists. In a typical experiment, substrates are sequentially coated by two layers of photoresists (both positive and negative). Then, we purposefully control the exposure time to generate slightly larger features in the positive photoresist than those in the negative photoresist. After development, their overlapping areas become the final features, which outline the original features. We demonstrate line widths down to 300 nm here, which can be readily improved with more precise control. By adjusting the lithography parameters and material deposition, the feature sizes, shapes (e.g., rings, numbers, letters), line widths (300–900 nm), and materials (e.g., SiO2, Cr, and Ag) of these features can be independently controlled. Combined with anisotropic etching, more complex three-dimensional nanostructures can be fabricated as well, as we demonstrate here with Si. We further fabricate photodetectors as an example application to show that these nanostructures fabricated by DLPL can be used to promote light-trapping MAPbI3 perovskite films to achieve good photoelectric properties. This strategy is not limited to ultraviolet photolithography and may also be incorporated into other energetic beam-based lithographic approaches, including deep and extreme ultraviolet photolithographies and electron beam lithography, to enhance their resolution.
研究领域:
纳米制造
·
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）