CHEMICAL RESEARCH IN CHINESE UNIVERSITIES
·
2015
·Vol. 31
·期 4
·585-589
·
IF 0.875
Wei Qi,Wang Liyuan
Molecular glass resist has been considered as one of the best choices for a new generation of lithography. In this work, a new type of photoactive compound was obtained by the esterification of tannic acid with 2-diazo-1-naphthoquinone-4-sulfonyl chloride(2,1,4-DNQ-Cl) and ditertbutyl dicarbonate. The new obtained compound possessed both a photosensitive group of diazonaphthoquinone sulfonate(2,1,4-DNQ) and a group of acidolytic protection. Upon the irradiation of the compound under 365 nm light, the former group was photolyzed and converted into indene carboxylic acid along with a small amount of sulfonic acid, which could lead to the deprotection of the latter group. As a result, a novel i-line molecular glass photoresist was formed with the chemical modification of tannic acid. The experimental results show that the modificated compound had a fair solubility in many organic solvents. The lithographic performance of the resist was evaluated on an i-line exposure system with high photosensitivity and resolution as well.
研究领域:
材料科学
·
微纳加工
·
高分子化学
·
光电子学
·
半导体工艺
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2012
·
IF 4.525
Jinxing Yu,Na Xu,Zhengping Liu,Liyuan Wang
Maleopimaric acid, cycloaddition reaction product of rosin with maleic anhydride, was reacted with hydroxylamine to afford N-hydroxy maleopimarimide, which was then further esterified with 2-diazo-1-naphthoquinone-4-sulfonyl chloride (2,1,4-DNQ-Cl) to give N-hydroxy maleopimarimide sulfonate. The carboxylic acid group of the compound was then protected by the reaction of this compound with vinyl ether compounds to give the corresponding molecular glass compounds. Upon irradiation to 365 nm light, the 2,1,4-DNQ group undergo photolysis not only to be converted into indene carboxylic acid but also generate a few amount of sulfonic acid which can catalyze the deprotection of the acid labile group. So, novel one-component positive-tone chemically amplified i-line photoresists can be formed by the molecular glass compounds. The lithographic performance of the resists was evaluated using i-line exposure system with high photosensitivity and resolution.
研究领域:
材料科学
·
光刻技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF POLYMER RESEARCH
·
2018
·Vol. 25
·期 9
·1-8
·
IF 1.434
Ji Changwei,Liu Jingcheng,Zheng Xiangfei,Liu Ren,Yuan Yan,Liu Xiaoya,Mu Qidao
Cholic acid is a class of biological compounds that exhibit valuable properties, and have been applied in many fields due to its special chemical structures for many areas. In this study, poly[(methacrylic acid tert-butyl cholate ester)- co -(acetoxy styrene)] [P(MATC- co -AS)] was synthesized from cholic acid, then the final copolymer poly[(methacrylic acid tert-butyl cholate ester)- co -(p-hydrostyrene)] [P(MATC- co -HS)] was obtained after P(MATC- co -AS) was hydrolysized. The structure and properties of the copolymers were determined through nuclear magnetic resonance, gel permeation chromatography, UV spectrometry, thermogravimetric analysis, and differential scanning calorimetry. The ultraviolet spectra of the copolymers indicate that they exhibit excellent optical transmittance at 248 nm. Moreover, the photolithography performance of a positive-tone photoresist based on the copolymers were evaluated using an KrF laser exposure system. The results indicate that a resolution of 0.25 μm could be achieved at a low exposure dose.
研究领域:
材料科学
·
生物化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Zhihao Wang,Jinping Chen,Tianjun Yu,Yi Zeng,Xudong Guo,Shuangqing Wang,Timothée Allenet,Michaela Vockenhuber,Yasin Ekinci,Guoqiang Yang,Yi Li
Nonchemically amplified resists based on triphenyl sulfonium triflate-modified polystyrene (PSTS) were prepared by a facile method of modification of polystyrene with sulfonium groups. The uploading of the sulfonium group can be well-controlled by changing the feed ratio of raw materials, resulting in PSTS0.5 and PSTS0.7 resists with sulfonium ratios of 50 and 70%, respectively. The optimum developer (methyl isobutyl ketone/ethanol = 1:7) is obtained by analyzing contrast curves of electron beam lithography (EBL). PSTS0.7 exhibits a better resolution (18 nm half-pitch (HP)) than the PSTS0.5 resist (20 nm HP) at the same developing conditions for EBL. This novel resist platform was further evaluated by extreme ultraviolet lithography, and patterning performance down to 13 nm HP at a dose of 186 mJ cm–2 with a line edge roughness of 2.8 nm was achieved. Our detailed study of the reaction and patterning mechanism suggests that the decomposition of the polar triflate and triphenyl sulfonium groups into nonpolar sulfide or polystyrene plays an important role in the solubility switch.
研究领域:
材料科学
·
纳米技术
·
光刻技术
✓ 已验证
DOI
高影响因子
Advanced Materials Technologies
·
2025
·
IF 6.2
Zeqi Yu,Siming Qi,Zuohu Zhou,Jian Wei,Ni Zhen,Jun Zhao,Lei Zhang,Weiwei Liu
The development of positive-tone photoresists has emerged as a critical focus in electron beam lithography (EBL) and extreme ultraviolet lithography (EUVL), driven by continuous miniaturization of integrated circuits. Herein, a metal-oxo cluster polymerization strategy is introduced to address the long-standing incompatibility between metal-oxo cluster enhanced EUV absorption and positive-tone lithographic behavior. A binuclear antimony-oxo cluster (SbOC) with polymerizable methacrylate ligands is synthesized and copolymerized with multifunctional thiols (4SH/2SH) via thiol-ene click chemistry, forming crosslinked antimony-oxo cluster-based polymer (SbOC-4SH x 2SH y ). The SbOC-4SH x 2SH y polymer exhibits robust positive-tone behavior attributed to its composition of a large number of fracture-prone sites. Precise modulation of crosslinking density enables controlled dissolution and lithography behavior, achieving 50 nm patterns at EBL with a sensitivity of 290 µC cm − 2 and 25 nm patterns at EUVL with exceptional dose latitude for wide process windows (32.9–217.4 mJ cm − 2 ). Mechanistic studies by X-ray photoelectron spectroscopy (XPS) reveals that radiation-induced network scission dominate the solubility switching for positive-tone lithography. Therefore, this study establishes the polymerization of metal-oxo clusters into cleavable polymers as a universal paradigm to reconcile EUV absorption with positive-tone photoresists requirements, advancing the frontier of semiconductor nanofabrication.
研究领域:
材料科学
·
半导体纳米加工
·
高分子化学
·
光刻技术
·
辐射化学
✓ 已验证
产品关联
DOI
高影响因子
INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
·
2018
·
IF 3.141
Xiangfei Zheng,Changwei Ji,Jingcheng Liu,Ren Liu,Qidao Mu,Xiaoya Liu
Xanthate-mediated reversible addition–fragmentation chain transfer (RAFT) methodologies have been applicable to preparation of branched or star polymers. In this article, novel star copolymers have been synthesized through xanthate-mediated RAFT polymerization with p-acetoxystyrene and tert-butyl acrylate. Fourier transfer infrared, nuclear magnetic resonance spectra, and gas chromatography analyses indicated that the polymerization was successful between both of the monomers and the star RAFT agent. The intrinsic viscosity and Zimm branching factor (g′) were used to confirm the copolymers’ architecture. The ultraviolet absorbance of the copolymer solutions indicated that the copolymer was suitable for use as a krypton fluoride (KrF) laser photoresist. Moreover, the photolithography performance of the positive-tone chemically amplified photoresist was evaluated. The results indicated that the photosensitive based on the star copolymer was higher than the linear one, and the pattern resolution was around 200 nm at a low exposure energy.
研究领域:
材料科学
·
高分子化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Nano
·
2021
·
IF 15.881
Wenfei Liu,Jiabao Wang,Xiuzhen Xu,Chuanzhen Zhao,Xiaobin Xu,Paul S. Weiss
Conventional photolithography, due to its scalability, robustness, and straightforward processes, has been widely applied to micro- and nanostructure manufacturing in electronics, optics, and biology. However, optical diffraction limits the ultimate resolution of conventional photolithography, which hinders its potential in nanoscale patterning for broader applications. Here, we introduce a derivative of conventional photolithography for nanoscale patterning called dual-layer photolithography (DLPL), which is based on the controlled exposure and development of overlapping positive and negative photoresists. In a typical experiment, substrates are sequentially coated by two layers of photoresists (both positive and negative). Then, we purposefully control the exposure time to generate slightly larger features in the positive photoresist than those in the negative photoresist. After development, their overlapping areas become the final features, which outline the original features. We demonstrate line widths down to 300 nm here, which can be readily improved with more precise control. By adjusting the lithography parameters and material deposition, the feature sizes, shapes (e.g., rings, numbers, letters), line widths (300–900 nm), and materials (e.g., SiO2, Cr, and Ag) of these features can be independently controlled. Combined with anisotropic etching, more complex three-dimensional nanostructures can be fabricated as well, as we demonstrate here with Si. We further fabricate photodetectors as an example application to show that these nanostructures fabricated by DLPL can be used to promote light-trapping MAPbI3 perovskite films to achieve good photoelectric properties. This strategy is not limited to ultraviolet photolithography and may also be incorporated into other energetic beam-based lithographic approaches, including deep and extreme ultraviolet photolithographies and electron beam lithography, to enhance their resolution.
研究领域:
纳米制造
·
材料科学
·
光学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
JOURNAL OF POLYMER RESEARCH
·
2017
·Vol. 24
·期 11
·1-7
·
IF 1.615
Zheng Xiangfei,Ji Changwei,Zeng Qingtao,Liu Jingcheng,Liu Ren,Mu Qidao,Liu Xiaoya
A series of copolymers Poly (TBA-CA-St-ASM)(PTCSA) were synthesized via precipitation polymerization by using tert-Butyl acrylate (TBA), Styrene (St), p-acetoxy styrene (ASM), and cedryl methacrylate (CA) as co-monomer. Then, Poly (TBA-CA-St-HS)(PTCSH) was prepared in the presence of sodium methoxide in methanol. The fourier transfer infrared (FT-IR) spectra and proton nuclear magnetic resonance ( 1 H–NMR) spectra indicated that the synthesis was successful. The molecular weight, glass transition temperature (T g ) and thermal decomposition temperature (T(10%)) of the copolymers increased with the addition of CA. Moreover, a positive-tone chemically amplified Krypton Fluoride (KrF) photoresist was prepared, and the photolithography performance of the photoresist was evaluated using a KrF laser exposure system, the result showed that the resolution could reach the level of 0.25 μm.
研究领域:
材料科学
·
化学工程
·
光刻技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of the American Chemical Society
·
2023
·
IF 15
Qianqian Wang,Hao Cui,Xiaolin Wang,Ziyu Hu,Peipei Tao,Mingyang Li,Jianlong Wang,Yaping Tang,Hong Xu,Xiangming He
Lithographic patterning, which utilizes the solubility switch of photoresists to convert optical signals into nanostructures on the substrate, is the primary top-down approach for nanoscale fabrication. However, the low light/electron-energy conversion efficiency severely limits the throughput of lithography. Thiol–ene reaction, as a photoinitiated radical addition reaction, is widely known as click reaction in the field of chemistry due to its extremely high efficiency. Here, we introduce a click lithography strategy utilizing the rapid thiol–ene click reaction to realize ultraefficient nanofabrication. This novel approach facilitated by the implementation of ultrahigh-functionality material designs enables high-contrast patterning of metal-containing nanoclusters under an extremely low deep-ultraviolet exposure dose, e.g., 7.5 mJ cm–2, which is 10–20 times lower than the dose used in the photoacid generator-based photoresist system. Meanwhile, 45 nm dense patterns were also achieved at a low dose using electron beam lithography, revealing the great potential of this approach in high-resolution patterning. Our results demonstrated the high-sensitivity and high-resolution features of click lithography, providing inspiration for future lithography design.
研究领域:
材料科学
·
纳米技术
·
化学
·
光子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Polymer Chemistry
·
2025
·
IF 3.9
Nan Qin,Na Li,Xiang Gao
Photoacid generators (PAGs) play an important role in chemically amplified resists (CARs), but small molecule PAGs have low solubility and limited compatibility with resins, which may lead to various problems. One of the important solutions is to bound PAG to polymer chains but differences in monomer reactivity can lead to an uneven distribution of molecular chain sequences between different polymer chains during polymerization, potentially impacting the lithographic performance. In this work, PAG units were incorporated into the photoresist resin polymer backbone via reversible addition-fragmentation chain transfer (RAFT) polymerization to synthesize methyl methacrylate polymer with different PAG loadings. The lithographic properties of the PAG bound polymer resist and the PAG blend polymer resist were studied and compared. The direct incorporation of PAG functionality into the polymer showed lower sensitivity, shorter acid diffusion length, and better compatibility. By observing the lithography results through AFM and SEM, the lithography lines of the PAG bound polymer photoresist synthesized via RAFT polymerization exhibited improved morphology and narrower line edge roughness (LER).
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry C
·
2017
·
IF 4.536
Chengyang Zhao,Chenchen Shao,Xiaowei Yu,Dian Yang,Jie Wei
We have developed a degradable photoresist that is responsive to pH and ultraviolet light (UV). This dual-responsive resist consists of 5,7-diacryloyloxy-4-methylcoumarin (fluorescent monomer), acrylic anhydride, and 3,6-dioxa-1,8-dithiooctane. It can be photocured using thiol–acrylate polymerization and photodimerization of coumarin moieties under 365 nm UV light exposure. The cured resist is degradable in aqueous solutions with pH > 7. The degradation process can be characterized by the change of fluorescence intensity in the aqueous solution. In this study, we have analyzed the properties of the degradation of the resist by changing the pH of the solution and its exposure time under 254 nm UV light. This UV exposure can induce photocleavage of the coumarin dimers. We then used these materials to fabricate micropatterns through nanoimprint lithography (NIL) process. Compared with other conventional degradable materials capable of NIL, the dual-responsive resist can help to clean the NIL mold easily at room temperature. This resist is also more environmentally friendly, is relatively low cost, can be faster to degrade, and is easier to characterize. It also has low volume shrinkage, which may have a valuable and positive effect on the development of NIL.
研究领域:
材料科学
·
纳米技术
·
光刻技术
✓ 已验证
产品关联
DOI
高影响因子
Materials
·
2023
·Vol. 16
·期 6
·2331
·
IF 3.4
Lifei Liu,Jintong Li,Ting Song,Rong Wu,Weizhen Zhao,Feng Huo
Acrylate photoresists have gained considerable attention in recent years owing to their high resolution, high sensitivity, and versality. In this work, a series of thermally stable copolymers are synthesized by introducing an isobornyl group, and well characterized using Fourier transform infrared spectroscopy (FT-IR) and nuclear magnetic resonance spectra (1H-NMR). The effects of polymerization conditions on the molecular weight and their further influence on lithography are explored. By analyzing the thermal properties, film-forming capabilities, and the patterning behavior of these copolymers, a direct correlation between lithography performance and polymerization conditions is established via the molecular weight. In addition, the baking temperature of lithography is also optimized by atomic force microscopy (AFM), after which a line resolution of 0.1 μm is observed under the exposure of a 248 nm UV light and electron beam. Notably, our synthesized photoresist displays dual-tone resist characteristics when different developers are applied, and the reaction mechanism of acid-catalyzed hydrolysis is finally proposed by comparing the structural changes before and after exposure.
研究领域:
材料科学
·
化学工程
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）