ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Yujie Yan,Qizhen Chen,Xiumei Wang,Yaqian Liu,Rengjian Yu,Changsong Gao,Huipeng Chen,Tailiang Guo
Organic phototransistors (OPTs) have attracted enormous attention because of their promising applications in sensing, communication, and imaging. Currently, most OPTs reported utilize field-effect transistors (FETs) with relative long channel length which usually has undesired amplification because of their inherent low transconductance originated from their low channel capacitance, limiting the further improvement of performance. Herein, a vertical channel hybrid electrochemical phototransistor with a nanoscale channel and large transconductance (VECPT) is invented for the first time to achieve ultrahigh photoresponsivity along with a fast response speed. Benefiting from the nanoscale channel length and large transconductance, the photo-generated carriers in channel can be efficiently dissociated, transported, and amplified into the enlarged photocurrent output. Therefore, the devices deliver substantially improved optoelectronic performances with a photoresponsivity as high as ≈2.99 × 107 A/W, detectivity of ≈1.49 × 1013 Jones, and fast-speed response of ≈73 μs under a low voltage of 1 V, which are superior to those of the reported OPTs based on FETs. Moreover, the in situ Kelvin probe microscopy is performed to characterize the surface potential of device systems for better elucidating the photosensing mechanism. Furthermore, taking advantage of its excellent optoelectronic performance, an ultraviolet light monitoring system is constructed by integrating VECPT with a light-emitting diode, which also shows the real-time, high-sensitive, and controllable photoresponse threshold properties. All these results demonstrate the great potential of these electrochemical phototransistors and provide valuable insights into the design of the nanoscale channel length device system for high-performance photodetection.
研究领域:
材料科学
·
电子工程
·
光电器件
✓ 已验证
DOI
PubMed
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Chandrasekar Perumalveeramalai,Jie Zheng,Jagadeesh Babu Bellam,SVN Pammi,Xiaoming Zhang,Chuanbo Li
Multi-wall carbon nanotube (MWCNT) thin film has been identified as the ideal electrode material due to their inherent electronic and optoelectronic properties. We have successfully fabricated a vertical field-effect phototransistor (vFEpT) using MWCNT as a porous source electrode. The optimized MWCNT electrodes showed an electrical conductivity of 3.92 × 10 3 S/m and a sheet resistance of about 490 Ω/□, with a layer thickness of about 520 nm. The as-fabricated transistor has p-type conductivity because of the unintentional doping of the PbS layer and the intrinsic hole transport property of the MWCNT network. Additionally, the device shows excellent photoelectric performance at 30 mWcm −2 of illumination, with a high current density of 2.3 × 10 −3 Acm −2 . With a high conductivity network for carrier transfer and separation, the special characteristics of MWCNT nanoporous thin film enable improved photoelectric properties, such as a high photoresponsivity of 3.16 AW −1 and a specific detectivity of 2.33 × 10 12 Jones when illuminated at 808 nm light irradiance with an intensity of 0.6 µW/cm 2 . Furthermore, the device demonstrated a steady dynamic response to an optical signal, with rising and falling times of 31.8 ms and 32.9 ms, respectively. This work presents a new method for creating high-performance vertical phototransistors with MWCNT as the source electrode.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Zenghui Wu,Guoan Tai,Runsheng Liu,Chuang Hou,Wei Shao,Xinchao Liang,Zitong Wu
The emergence of borophene has triggered soaring interest in the investigation of its superior structural anisotropy, a novel photoelectronic property for diverse potential applications. However, the structural instability and need of a metal substrate for depositing borophene restrict its large-scale applications toward high-performance electronic and optoelectric devices. van der Waals epitaxy is regarded as an efficient technique for growing superb two-dimensional materials onto extensive functional substrates, but the preparation of stable and controllable borophene on nonmetallic substrates is still not reported. Here, we demonstrate that borophene films can be synthesized onto a mica substrate by van der Waals epitaxy, where hydrogen and NaBH4 are respectively used as the carrier gas and the boron source. The lattice structure of the as-synthesized borophene coincides with the predicted α′-boron sheet. The borophene-based photodetector shows an excellent photoresponsivity of 1.04 A W–1 and a specific detectivity of 1.27 × 1011 Jones at a reversed bias of 4 V under illumination of a 625 nm light-emitting diode, which are remarkably superior to those of reported boron nanosheets. This work facilitates further studies of borophene toward its attractive properties and applications in novel optoelectronic devices and integrated circuits.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
NANOTECHNOLOGY
·
2022
·Vol. 34
·期 2
·025202
·
IF 3.953
Jun Zhu,Hongyan Chen,You Zi,Mengke Wang,Weichun Huang
Although black phosphorus analogue, bismuthene, has been extensively investigated in recent years, yet the investigation into the photoelectronic devices is still in its infancy. In this contribution, uniform zero-dimensional (0D) bismuth (Bi) quantum dots (QDs) with different sizes were successfully synthesized by a simple solvothermal method. The as-synthesized 0D Bi QDs serve as working electrode materials by a direct deposition for photoelectrochemical (PEC)-type photodetection. The PEC results demonstrate that the as-fabricated 0D Bi QD-based electrode not only possess suitable self-powered broadband photoresponse, but also displays excellent photodetection performance. Under simulated light, the photocurrent density and photoresponsivity of the as-fabricated 0D Bi QD-based electrode can reach 2690 nA cm−2, and 22.0 μA W−1, respectively. In addition, the as-prepared Bi QDs with the average diameter of 17 nm exhibit the best PEC photoresponse behavior in the studied size range of Bi QDs, mainly ascribed to the synergistic effect of suitable band gap and accessible active sites. It is anticipated that the uniform Bi QDs can be served as building blocks for a variety of photoelectronic devices, further expanding the application prospects of bismuthene, and can provide in-depth acknowledge on the performance optimization of monoelement Bi-based optical devices.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
DOI
高影响因子
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
·
2023
·Vol. 129
·期 12
·1-8
·
IF 2.7
Zhao Nanyin,Wang Kai,Li Jun
Tellurium (Te) is a kind of multifunctional material attracting a great deal of interest. Herein, we described a substrate-free solution process to produce Te nanosheets (Te NSs) and build photodetectors (PDs) of photoelectrochemical (PEC) type based on them. The PDs are self-powered according to the photocurrent density about 0.28 µA cm −2 and the photo responsivity of 3.37 µA W −1 when the optical power is 80.2 mW cm −2 without any extrinsic voltage. They exhibit excellent photo-response switching behaviors with high responsivity (15.8 µA W −1 ) and rapid response time (~ 227 ms of the rise time and ~ 293 ms of the fall time) at 0.6 V potential, as well as great long-term stability and durability (storage in ethanol for 1 month). Simultaneously, we measured the photoelectric response after heating the solution to explore the effect of the solution temperature on the photoelectric properties of Te NSs. At a temperature of 70℃, the enhancement was leveraged to promote the photo-response to 14.3 µA W −1 . This work paved the way for developing higher performance PDs.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）