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CHEMICAL ENGINEERING JOURNAL · 2024 · IF 13.3

A dual strategy to enhance the photoelectric performance of Perovskite-Based photodetectors for potential applications in optical communications

Tao Wang,Daming Zheng,Karol Vegso,Guillaume Baillard,Peter Nadazdy,Nada Mrkyvkova,Peter Siffalovic,Yimu Chen,Laurent Coolen,Thierry Pauporté,Fu Feng

The emerging metal halide perovskite photodetectors (PDs) attract extensive attention for optical communications due to their excellent photoelectric properties and are considered promising alternatives for the next generation of PDs. Here, we demonstrate high-performance MAPbI 3 PDs based on the p-i-n structure for optical communications. A twofold approach is implemented to enhance the photoelectric performance and stability of the device. First, we introduce Au nanoparticles to reduce grain boundaries and defects, and increase the crystallinity of perovskite. Second, we use n-propylammonium iodide as an efficient recrystallization agent to decrease interface recombination and create a capping layer of a quasi-2D (PA) 2 PbI 4 perovskite coating. This barrier layer also protects the underlying 3D perovskite film from degradation. The prepared PDs exhibit a high responsivity of 0.4 A/W, a response time of 7.58 µs, and an on/off current ratio of 2.0 × 10 5 . In addition, the modified unencapsulated PDs present outstanding long-term environmental stability (>100 days) under ambient conditions. Finally, the PDs are successfully integrated into a visible light communication system to transmit ASCII-encoded information as an optical signal receiver. The results open up the possibility of developing high-speed and stable metal halide perovskite PDs that have potential for applications in optical communications.

研究领域: 材料科学 · 光电技术 · 通信工程
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ADVANCED FUNCTIONAL MATERIALS · 2025 · IF 19

High-Performance Quasi-2D Sn-Pb Perovskite Photodetectors for High-Fidelity Image Sensing and Optical Communication

Kanghui Ke,Yu Gao,Jiazhi Meng,Yi He,Bohua Deng,Haoyu Huang,Si-Wei Zhang,Kai Zhang,Zhuhua Xu,Huan Li,Xiongxian Yao,Zilong Ye,Liping Song,Chang Shu,Shihe Yang,Ni Qin,H. Y. Fu,Hin-Lap Yip,Feiyu Kang,Guodan Wei

Developing stable and efficient photodetectors (PDs) for environmentally friendly applications such as biological imaging, optical communications, and wearable electronics demands novel materials with improved optoelectronic properties. Herein, by precisely controlling the Pb 2 ⁺ content (3%, 6%, and 12%) using a galvanic displacement reaction (GDR), we created a mixed 2D/3D phase structure that enhances the quality of the Sn-Pb thin films, which improved crystalline orientation, suppressed trap-assisted recombination and reduced Sn 2+ oxidation processes, resulting in superior environmental stability under air exposure conditions. The flexible device demonstrated robust stability, maintaining performance after 4000 bending cycles or 96 h of storage in ambient conditions. The self-powered quasi-2D Sn-Pb PDs exhibit an impressively low dark current of 1.2 × 10 −8 A cm −2 , rapid rise and decay time of 684 and 683 ns, a peak responsivity of 405 mA W −1 , and a peak detectivity of 1.19 × 10 13 Jones at 710 nm. Additionally, under LED illumination (λ = 910 nm), the photodetectors also demonstrate high fidelity in optical signal transmission, successfully facilitating encrypted communication sequences and image transmission at a rate of 25 kbps. This work presents a promising strategy for developing high-performance, stable quasi-2D Sn-Pb perovskite photodetectors, highlighting their potential for next-generation photodetectors in flexible, real-world environments.

CAS / MDL: 64-17-5
研究领域: 材料科学 · 光电子学 · 环境科学
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Advanced Optical Materials · 2024 · IF 8

High Performance Self-Powered p+-GaN/n−-ZnO/Au UV Heterojunction Phototransistor with 3D Interconnected ZnO Nanowire Network for Solar-Blind Imaging and Optical Communication

Xiujuan Wang,Shuang Gao,Zhuo Han,Xiaodong Zhang,Haoran Chen,Kang Xiang,Muyang Ye,Junxing Qiu,Chunyan Wu,Xiaoping Yang,Tianci Zhang,Qian Gao,Kun Xing

Heterojunction phototransistor (HPT) is considered the most promising detector technology in weak ultraviolet (UV) signal detection due to its inherent internal gain through transistor action. However, achieving high-performance self-powered UV HPTs remains a significant challenge. In this study, a high-performance self-powered p + -GaN/n − -ZnO/Au UV HPT with ZnO serving as the floating base is cleverly designed. The device features a unique back-to-back configuration of the p + -GaN/n − -ZnO heterojunction and n − -ZnO/Au Schottky junction, along with an ultrathin ZnO base layer of a 3D nanowire network structure. This design enables the fabricated p + -GaN/n − -ZnO/Au UV HPT to operate in a self-powered mode with exceptional performance metrics. Under zero bias, the device exhibits outstanding characteristics including ultralow dark current of 1.7 × 10 −13 A, remarkable I photo /I dark ratio of 10 6 , fast response speed (t r = 150 µs / t f = 250 µs), high responsivity of 9.74 A W −1 , and detectivity of 1.58 × 10 14 Jones, representing the best result achieved for UV HPTs thus far at zero bias. Moreover, the fabricated UV HPT is successfully demonstrated in solar-blind imaging and UV communication systems without the need for an external power supply. This work presents effective and practical design strategies for achieving high-performance self-powered UV HPTs.

CAS / MDL: 68-12-2 10196-18-6
研究领域: 材料科学 · 光电子学 · 半导体器件
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ACS Applied Electronic Materials · 2024 · IF 4.3

Copper-Based Polynary Chalcogenide Thin Film Photodetectors for Infrared Photodetection and Light Communication

Yanjun Duan,Bingxin Yang,Yujiao Ma,Chao Gao,Shengren Li,Lin Yang,Zhiqiang Li

High-quality photodetectors are essential for getting external information, especially those operating in the near-infrared range. These devices play a critical role in remote communication systems by effectively converting light into electronic signals effectively. The emerging copper-based chalcogenides have attracted attention for thin film solar cells and self-powered photodetectors. However, they can detect only certain wavelengths of infrared light because of their wide bandgaps. In this work, we prepared a hexahydroxy chalcogenide copper–cadmium-zinc–tin sulfur–selenium (CCZTS) absorber with a narrow bandgap of 0.87 eV. Then, we developed a self-powered CCZTS/cadmium sulfide (CdS) thin film photodetector. Furthermore, the manganese (Mn2+) dopant is incorporated into the CdS buffer layer to improve the heterojunction interface properties. As a result, the devices based on the CCZTS/CdS:Mn heterojunction exhibit high responsivity, reduced dark current, and a fast response speed in the wavelength range of 300–1550 nm. At 1319 nm, it has a responsivity of 0.96 A W–1, a detectivity of 3.79 × 1012 Jones. In addition, the resulting CCZTS-based photodetector is successfully integrated into an optical communication system as an optical signal receiver. Our results demonstrate that it has a significant potential for low-cost infrared photodetection and optical communications.

研究领域: 材料科学 · 光电子学
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ADVANCED FUNCTIONAL MATERIALS · 2022 ·Vol. 32 ·期 48 ·2208694 · IF 19.924

High-Performance and Stable Plasmonic-Functionalized Formamidinium-Based Quasi-2D Perovskite Photodetector for Potential Application in Optical Communication

Tao Wang,Daming Zheng,Jike Zhang,Jie Qiao,Changjun Min,Xiaocong Yuan,Michael Somekh,Fu Feng

Photodetectors play an important role in optical communication systems and are essential to achieve high-fidelity signal transmission. The emerging formamidinium-based quasi-2D layered perovskites have attracted attention in the field due to their excellent photoelectric performance and moisture stability. By optimizing film quality and device engineering a high-performance flexible photodetector based on formamidinium-based perovskites ((BA) 2 FAPb 2 I 7 ) is developed, which shows fast response and excellent air-stability. By introducing the formamidinium chloride as an additive the quality and the crystallinity of the film are improved. In addition, localized surface plasmonic resonances (LSPRs) are introduced by embedding Au nanostructures on the substrate, the LSPRs, in turn, enhance light and matter interaction, which further increases the performance of the device. The optimized devices show an ultimate response speed ≈9 µs as well as outstanding long-term environmental stability (environmental conditions > 1000 h). Achieving such high dynamic range and stability is to the best of authors knowledge rarely reported. The device shows the highest responsivity of 2.3 A W −1 , detectivity of 3.2 × 10 12 Jones, and outstanding flexibility stability. Finally, the prepared photodetector is successfully integrated into an optical communication system and tested. The results suggest that formamidinium-based quasi-2D perovskite photodetectors have great potential in optical communication applications.

研究领域: 材料科学 · 光学工程 · 通信技术
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Advanced Materials Technologies · 2025 · IF 6.2

Cost-Effective Fabrication of Plasmonic Nanoarrays Using Nanosphere-Lithography for Low-Threshold Lasers and High-Bandwidth Optical Communication

Hanhuai Yang,Tonghua Hu,Hongyu Yang,Jiaxi Li,Jingzhou Li,Haocheng Tang,Kun Qian,Zhanpeng Wang,Hongxing Dong,Long Zhang

Plasmonic lasers emerge as promising candidates for next-generation photonic devices because they confine light at subwavelength scales and enable ultra-compact optical systems. However, these devices face challenges like complex fabrication, high costs, high laser thresholds, and difficulties in large-area uniformity and optimal light-matter coupling. In this study, low-cost nanosphere lithography is used to fabricate large-area curved silver triangular arrays, which are coupled with CsPbBr 3 quantum dots to realize a low-threshold laser. By controlling the injection rate with a syringe pump, a large-area, uniform polystyrene colloid sphere monolayer and silver triangular arrays are prepared. Finite-difference time-domain simulations and time-resolved photoluminescence measurements systematically investigate the effects of microsphere size and Ag nanoparticle thickness on plasmonic resonance, photoluminescence enhancement, and emission dynamics. Optimizing Ag thickness (50–150 nm) aligns nanoarray resonance with exciton transition, enabling strong coupling and a 12.6 Purcell factor. The optimized devices exhibit a low lasing threshold of 6.3 µJ∙cm −2 , an ultrahigh Q-factor of 888 ± 20, and a lifetime of 5 ps. Additionally, a THz optical encoder with a maximum modulation bandwidth of 0.03 THz demonstrates potential for optical communication. This work underscores the importance of precise nanostructure fabrication in optimizing plasmonic laser performance.

CAS / MDL: 7699-45-8
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CHEMICAL ENGINEERING JOURNAL · 2025 · IF 13.2

High-responsivity and self-powered photoelectrochemical ultraviolet photodetector based on self-supporting SiC/GaN heterojunction nanoarrays for reliable underwater optical communication applications

Runchao Dong,Bartosz Orwat,Beata Luszczynska,Jia Zhang,Hongxin Yin,Genqiang Liu,Weijun Li,Dongdong Zhang,Zhentao Du,Weiyou Yang,Huan He,Fengmei Gao,Shanliang Chen

Controlling the interface properties and surface carrier dynamics of nanostructured semiconductors is crucial for enhancing the electrical and optical performance of photoelectrochemical (PEC) photodetectors (PDs). Herein, a novel self-powered PEC ultraviolet (UV) PD applicable to harsh underwater environments is developed based on integrated self-supporting SiC/GaN heterojunction nanowire arrays. Whole single-crystal integrated self-supporting SiC nanoarrays are encapsulated by high-quality GaN films via two-step anodization and high-temperature nitridation processes. The optimized heterojunction nanoarrays PEC UV PD with 40 min nitridation duration (SiC/GaN-40) demonstrates outstanding photodetection capabilities with high responsivity ( R λ , 698 mA/W), excellent detectivity ( D ⁎ , 1.66 × 10 11 Jones), remarkable external quantum efficiency ( EQE , 231.2 %), and rapid rise/decay times ( τ r / τ d , 127.93/214.92 ms) under 375-nm light illumination at 0.6 V bias voltage. Moreover, the SiC/GaN-40 device demonstrates excellent self-powered performance, achieving exceptional R λ , D ⁎ , EQE, and τ r / τ d , of 588.24 mA/W, 9.3 × 10 10 Jones, 194.9 %, and 160/199 ms, respectively. Furthermore, the device exhibits excellent long-term operational and aging stability even under harsh underwater environments, such as pH-universal and wide-temperature solutions. This study provides a valuable reference for exploring high-responsivity and reliable PEC PDs suitable for harsh underwater optical communication, thus advancing the heterojunction and interfacial engineering strategies for next-generation optoelectronics.

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Nature Photonics · 2024 · IF 32.3

High-brightness transition metal-sensitized lanthanide near-infrared luminescent nanoparticles

Ming Jiang,Chen Ying,Miao Han,Fan Yong,Wang Shangfeng,Chen Zihan,Guo Zhenhao,Guo Zhixiu,Qi Luyin,Wang Xusheng,Yun Baofeng,Pei Peng,He Haisheng,Zhang Hongxin,Tang Yun,Zhao Dongyuan,Wong Gary Ka-Leung,Bünzli Jean-Claude G.,Zhang Fan

The demand for near-infrared (700–1,700 nm) materials in optical communications, laser sources and biological imaging applications has led to extensive research on lanthanide-doped nanoparticles, owing to their nanostructure modulation and interface property tunability. However, the low molar extinction coefficient of conventional lanthanide sensitizers limits the brightness of lanthanide near-infrared nanoparticles for applications in low-power excitation scenarios. Here we introduce Na 3 CrF 6 , a new crystalline nanoparticle that serves as both sensitizer and host for high-brightness near-infrared emission from lanthanide activators (Er 3+ , Tm 3+ , Yb 3+ or Nd 3+ ). We demonstrate an increase in brightness of up to 370 times compared with the most intense conventional lanthanide-sensitized nanoparticles. This discovery is also validated for other lanthanide-doped nanoparticles sensitized with low-cost transition metals (Mn 2+ or Ni 2+ ). Our transition metal-based nanoparticles represent a powerful toolbox to enable high signal-to-noise-ratio labelling and imaging with low-power excitation sources such as white light-emitting diode or persistent luminescence materials. This work paves the way for next-generation high-brightness near-infrared luminescence systems, suited for a wide range of low-illumination excitation applications.

CAS / MDL: 67-56-1 2923-18-4
研究领域: 材料科学 · 光学 · 纳米技术 · 生物医学工程
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Journal of Physical Chemistry Letters · 2023 · IF 5.7

High-Radiance Shortwave Infrared Light-Emitting Diodes Based on Highly Stable PbS Colloidal Quantum Dots

Fei Li,Jiao Jiao Liu,Qiulei Xu,Ruiguang Chang,Lei Wang,Zhenghui Wu,Huaibin Shen,Zuliang Du

PbS quantum dot light-emitting diodes (QLEDs) emitting around 1550 nm promise important applications in optical communications. However, due to insufficient suppression of surface traps for large-size PbS quantum dots (QDs), their performance under large driving current density was not satisfactory. In this work, octanethiol surfactant was added into a PbS QD solution and adsorbed onto the dot surface. As a result, the surface traps and the continuous oxidation of the unprotected (100) facets in PbS QDs were greatly suppressed. Therefore, the PbS QDs with octanethiol doubled their photoluminescence efficiency and showed outstanding stability. The PbS-based QLEDs with benchmark device structure showed a breakthrough high radiance of 18.3 W sr–1 m–2 with >2000 mA/cm2 driving current density. The efficient passivation of surface traps with octanethiol surfactant and the suppressed coupling between excitons and surface states under large working current were the main reasons for achieving the breakthrough high radiance.

研究领域: 纳米技术 · 光电子学 · 材料科学 · 半导体器件 · 量子点
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ADVANCED MATERIALS · 2017 ·Vol. 29 ·期 41 ·1703552 · IF 19.791

Polar-Electrode-Bridged Electroluminescent Displays: 2D Sensors Remotely Communicating Optically

Xiuru Xu,Dan Hu,Lijia Yan,Shaoli Fang,Clifton Shen,Yueh-Lin Loo,Yuan Lin,Carter S. Haines,Na Li,Anvar A. Zakhidov,Hong Meng,Ray H. Baughman,Wei Huang

A novel geometry for electroluminescent devices, which does not require transparent electrodes for electrical input, is demonstrated, theoretically analyzed, and experimentally characterized. Instead of emitting light through a conventional electrode, light emission occurs through a polar liquid or solid and input electrical electrodes are coplanar, rather than stacked in a sandwich configuration. This new device concept is scalable and easily deployed for a range of modular alternating-current-powered electroluminescent light sources and light-emitting sensing devices. The polar-electrode-bridged electroluminescent displays can be used as remotely readable, spatially responsive sensors that emit light in response to the accumulation and distribution of materials on the device surface. Using this device structure, various types of alternating current devices are demonstrated. These include an umbrella that automatically lights up when it rains, a display that emits light from regions touched by human fingers (or painted upon using a mixture of oil and water), and a sensor that lights up differently in different areas to indicate the presence of water and its freezing. This study extends the dual-stack, coplanar-electrode device geometry to provide displays that emit light from a figure drawn on an electroluminescent panel using a graphite pencil.

研究领域: 光电子学 · 传感器与传感系统 · 显示技术 · 材料科学 · 电气工程
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INORGANIC CHEMISTRY · 2025 · IF 4.7

Stable Cr3+-Doped Near-Infrared Emitting Phosphors and pc-LEDs for Wireless Communication Applications

Hangzhang Kou,Fanlei Qin,Jianfeng Wang,Esmaeil Heydari,Gongxun Bai

Near-infrared (NIR) wireless communication has been widely investigated because of its fast transmission speed and good penetration barrier performance. Despite their promising characteristics, the implementation of these materials is substantially limited by thermal degradation effects. To address this challenge, we developed Cr3+-activated gadolinium gallate phosphors that exhibit an emission bandwidth of 92.8 nm at half-maximum intensity while maintaining 86.3% of the initial luminous intensity at 150 °C. Furthermore, phosphor-converted light-emitting diodes (pc-LEDs) were manufactured, attaining a 1060 mW NIR output power and 360 mA current. The device was used to test the signal transmission effect using the prepared NIR pc-LEDs as the light source. In the case of input sine wave, inverse sine wave, and triangle wave, the transmission of the waveform was realized, and its penetration performance was tested. The experimental findings demonstrate that the proposed material exhibits promising applications in NIR optical communication systems.

研究领域: 材料科学 · 光学通信 · 固态照明 · 光子学 · 半导体器件
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PhotoniX · 2025 ·Vol. 6 ·期 1 ·1-17 · IF 19.1

Extreme anti-interference capability in temporal and frequency domain by utilizing laser Antenna in optical wireless communication system

Qian Kun,Yang Hongyu,Li Jingzhou,Liang Dong,Li Jiaxi,Zhong Yichi,Xu Zhuhua,Zhang Jiahao,Yang Hanhuai,Liang Xizhe,Zhang Junping,Dong Hongxing,Zhang Long

Fluorescent antennas have emerged as promising alternatives to conventional lens modules in optical wireless communication (OWC) systems, offering an expanded field of view (FOV) by surpassing the étendue limit. However, their limited anti-interference performance in both time and frequency domains has constrained their widespread applications. Herein, we introduce a novel “laser antenna” that integrates stimulated emission from high-quality perovskite microlasers into the optical antenna design. Achieving a theoretical bandwidth of up to 36.2 GHz and a signal-to-noise ratio (SNR) of up to 40 dB, this laser antenna demonstrates strong anti-interference capabilities in the temporal domain. Furthermore, spectral analysis using amplitude shift keying (ASK) modulation reveals its distinct periodicity, tunability, and recoverability, enabling robust frequency selectivity even in the presence of interference. These findings establish the laser antenna’s potential to overcome critical limitations of conventional OWC systems, thereby paving the way for efficient, stable, and high-performance optical wireless links.

研究领域: 光学通信 · 光子学 · 无线通信 · 激光技术 · 信号处理
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