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Advanced Electronic Materials · 2021 ·Vol. 8 ·期 4 ·2100997 · IF 7.295

Combustion Synthesized Electrospun InZnO Nanowires for Ultraviolet Photodetectors

Junyu He,Peilong Xu,Ruifu Zhou,Hao Li,Hongliang Zu,Jun Zhang,Yuanbin Qin,Xuhai Liu,Fengyun Wang

Ultraviolet (UV) photodetectors play an important role in numerous commercial and scientific applications. The UV photodetectors based on binary-cation indium zinc oxide (InZnO) thin films exhibit great performance enhancement, compared with their single-cation counterparts. However, UV photodetectors based on 1D InZnO nanowires could potentially exhibit more superior optoelectrical performance, due to the large surface-to-volume ratio and favorable carrier transport characteristics of nanowires. This work has combined combustion synthesis with electrospinning technique to efficiently fabricate InZnO nanowire-based UV photodetectors. At the annealing temperature of 375 °C, the newly designed InZnO nanowire photodetectors exhibit excellent photoelectric performance under the irradiation of 310 nm UV light, including a photo-to-dark current ratio of 1.2 × 10 4 , a photo responsivity of 2.8 × 10 3 A W –1 , and a high detectivity of 2.4 × 10 16 Jones. This study not only demonstrates the opportunity to construct new-generation transparent electronics based on 1D metal oxide nanowires but also sheds new light on how to further decrease the annealing temperature of metal oxide nanowire devices for low-temperature fabrication processes.

研究领域: 材料科学 · 纳米科技 · 光电子学 · 半导体器件 · 功能材料
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Advanced Electronic Materials · 2021 ·Vol. 7 ·期 11 ·2100706 · IF 7.295

Highly Crystallized Tin Dioxide Microwires toward Ultraviolet Photodetector and Humidity Sensor with High Performances

Hui Liu,Chaolei Zuo,Ziliang Li,Xinya Liu,Xiaosheng Fang

The rapid development of artificial intelligent and internet of things calls for high-performance multifunctional devices for synchronous detection of a wide variety of environmental signals, such as gas, light, and humidity. Herein, highly crystallized tin dioxide (SnO 2 ) microwires (MWs) with low density of point defects are synthesized by the chemical vapor deposition method and constructed into a multifunctional device for photo and humidity sensing. The device shows excellent photoelectric performances, for example, ultralow dark current of ≈10 −13 A, ultrahigh on–off ratio of >10 7 , UV/visible rejection ratio of R 300 nm / R 400 nm > 10 7 , specific detectivity ( D *) of 1.16 × 10 15 Jones, linear dynamic range (LDR) of 152 dB, high responsivity of 18 A W −1 , and fast photoresponse speed of t rise / t decay = 2.7 µs/2.5 ms at 5 V bias. Furthermore, the p-CuI/n-SnO 2 heterojunction shows outstanding self-powered properties, such as responsivity of 8.98 mA W −1 , specific detectivity of 1.98 × 10 12 Jones and LDR of 106 dB at 0 V bias. Additionally, the SnO 2 MWs also show high sensitivity to ambient humidity changes. Therefore, the SnO 2 MWs show high potential for multifunctional applications, such as UV photodetector and humidity sensor.

研究领域: 材料科学 · 纳米科技 · 传感器技术 · 半导体物理 · 环境监测
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Small · 2024 ·Vol. 20 ·期 27 ·2308590 · IF 13

High-Performance Flexible Broadband Photoelectrochemical Photodetector Based on Molybdenum Telluride

Xiang Xu,Ying Wang,Yeqin Ji,Zhijian Chen,Chunhui Lu,Xinlong Xu,Dengxin Hua

Flexible broadband photodetectors are desired but challenging to be fabricated for next-generation wearable intelligent optoelectronic devices. Considering the narrow bandgap and strong light absorption, molybdenum telluride (MoTe 2 ) based photoelectrochemical photodetectors are successfully assembled by liquid phase exfoliation accompanied with the electrophoretic deposited method. This MoTe 2 -based photodetector shows a broadband detection in ultraviolet–near-infrared band, long-term stability within 18000 s, and fast response in millisecond-level (response time≈19 ms, recovery time≈26 ms). More importantly, even though the MoTe 2 photodetector is bent and twisted at a high degree for several hundred times, it still shows excellent flexibility with stable on-off switching characteristics. Additionally, this photodetector displays a good response for rotation angles in the range from 0° to 360°, and the extracted I ph maintain almost the same value approximately 0.97 µA cm −2 , suggesting an omnidirectional detection capability. This work demonstrates the proposed flexible photoanode shows a great potential in future broadband omnidirectional detection systems.

研究领域: 纳米生物医学 · 光电子学 · 材料科学 · 生物传感器 · 可穿戴设备 · 分子诊断
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Laser & Photonics Reviews · 2024 ·Vol. 19 ·期 1 ·2401012 · IF 9.8

Conformal Growth of Nano-Patterned Monolayer MoS2 with Periodic Strain via Patterned Substrate Engineering for High-performance Photodetectors

Pengcheng Jian,Maohua Chen,Dongyan Li,Yongming Zhao,Weijie Liu,Yuang Luo,Xiantai Tian,Meng Peng,Xing Zhou,Jiangnan Dai,Feng Wu,Changqing Chen

The extraordinary mechanical compliance of 2D molybdenum disulfide (MoS 2 ) makes it an ideal candidate for strain modulation of various electrical and optical properties. However, developing facile methods for accurate and stable engineering of strain still remains a major challenge. Here, a novel and effective method is demonstrated for introducing periodic strain into monolayer MoS 2 by direct growth on nano-patterned sapphire substrates (NPSS). A mixed aqueous solution of Na 2 MoO 4 and NaOH is spin-coated on the NPSS and sulfurated in one step by chemical vapor deposition (CVD). Highly oriented monolayer MoS 2 single-crystal nanosheets with high quality and few sulfur vacancies are achieved conformally on the NPSS via a liquid-mediated growth mode. Notably, the periodically distributed blue shift of the PL emission peak demonstrated periodic compressive strain is introduced into the nano-patterned MoS 2 via the thermal expansion difference between MoS 2 and substrates. Furthermore, photodetectors fabricated using the nano-patterned monolayer MoS 2 exhibit a high photo-to-dark current ratio (PDCR) over 10 6 , an excellent detectivity of 5.4 × 10 13 Jones, and a fast photoresponse of 7.7 ms, owing to the strain-induced back-to-back built-in electric field, enhanced light absorption by light-scattering effect and fewer S vacancy defects. The scanning imaging demonstration based on the single-pixel nano-patterned MoS 2 photodetector further confirms its great potential in image sensors. This work hereby presents a pathway for direct conformal growth of nano-patterned monolayer MoS 2 with precisely periodic strain, which should inspire the applications for high-performance optoelectronic devices via the strategy of patterned substrate engineering by the periodic nanostructures.

研究领域: 材料科学 · 纳米科技 · 光电子学 · 凝聚态物理 · 表面科学 · 半导体器件
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