ACS Applied Materials & Interfaces
·
2022
·
IF 10.383
Zhi Jiang,Hezhuang Liu,Jihua Zou,Yixuan Huang,Zhaoquan Xu,Caihong Li,Desheng Liu
With the rapid advances in metal halide perovskite optoelectronics, eliminating toxic lead from perovskites has been an urgent demand. However, state-of-the-art lead-free perovskite photodetectors are still challenged with issues of low photoresponse, poor stability, etc. Here, all-inorganic lead-free perovskite (Cs3Cu2I5) single crystals that possess good stability under air exposure are synthesized via a facile solid reaction method. Meanwhile, a higher photoluminescence quantum yield of 95.2% and a prolonged carrier lifetime of 1.127 μs are obtained by further optimizing the synthesis. Benefiting from the polyporous surface and hollow structure of Cu-7,7,8,8-tetracyanoquinodimethane (CuTCNQ) microtubes, more Cs3Cu2I5 nanocrystals can adhere on the innershell and outershell of CuTCNQ-15 microtubes. This unique structure contributes to the improved efficiency of utilizing incident light and promotes charge carrier generation and transportation. As a result, the hierarchical CuTCNQ/Cs3Cu2I5 (hollow microtube/nanocrystal) heterostructure phototransistor exhibits a high responsivity of 88.36 A W–1 and a large detectivity of 1.66 × 1012Jones. The proposed lead-free perovskites and mixed-dimensional heterojunctions are promising for sensitive light detection.
研究领域:
材料科学
·
光学工程
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 32
·12571-12581
·
IF 5.7
Kaiyi Zhang,Fang Wang,Lei Zheng,Junqing Wei,Yongxu Hu,Yangyang Xie,Hongling Guo,Fengpu Zhang,Xin Lin,Zewen Li,Tianling Ren,Zhitang Song,Kailiang Zhang
2D Bi2O2Se is an intriguing building block for next-generation optoelectronic devices owing to its ultrahigh electron mobility and ultrabroadband photodetection capability. However, fully exploiting its advantages in advanced optoelectronic applications remains greatly challenging owing to the lack of in-depth understanding of the morphological evolution of Bi2O2Se crystals and efficient methods for enhancing their photoresponse. Herein, we developed a novel “cage-confinement” technique to achieve dimensionality-tunable growth of Bi2O2Se crystals in a space-confined CVD system. It can effectively control the key parameter of determining the dimensionality of crystals, referred to as the elastic strain energy of nucleation (ΔGs), by tuning the active area size of Bi2O3 seeds at a suitable flow rate of carrier gas. Furthermore, based on an optimized van der Waals transfer technique of crystals and electrodes, a sheet-shaped phototransistor of Bi2O2Se has a high responsivity (R) of ∼74 000 A W−1 and detectivity (D*) of ∼4.0 × 1011 Jones. Meanwhile, a wire-shaped device demonstrates an impressive R value of 300 000 A W−1, D* value of 3.9 × 1012 Jones and photoconductance gain (Gph) of 1.2 × 105. These results surpass most reported Bi2O2Se-based detectors and pave the way for the applications of 2D layered semiconductors in advanced optoelectronic devices and technologies.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Yingjie Zhao,Jiaming Hu,Zhefeng Lou,Lanxin Xu,Wenbin Li,Xiao Lin,Xiaorui Zheng
Analogous to the pivotal SiO 2 /Si junction in modern electronics, the β-Bi 2 SeO 5 /Bi 2 O 2 Se architecture has been demonstrated to enhance the performance of electronic devices. However, its potential to improve the optoelectronic properties of Bi 2 O 2 Se, such as responsivity and detectivity, remains unexplored. The photodetection performance of Bi 2 O 2 Se is primarily limited by intrinsic selenium vacancies at its surface, which lead to low photocurrent and instability. To address this, a defect-engineered β-Bi 2 SeO 5 /Bi 2 O 2 Se heterojunction is constructed with an atomically sharp interface via a developed UV-assisted oxidation strategy. This heterostructure successfully suppresses surface vacancies while enabling dual functionality—surface passivation and photoactive charge separation, resulting in substantially enhanced optoelectronic performance. First-principles calculations confirm a stable type-II band alignment with interfacial transitions enabling efficient carrier dissociation. The visible-near-infrared transparency and high- k of β-Bi 2 SeO 5 further enable top-gated phototransistors with dynamically tunable photoresponse, achieving the largely improved metrics of responsivity (1.2 × 10 4 A W −1 ), detectivity (1.5 × 10 13 Jones), and on/off ratio (2.3 × 10 6 ). Additionally, by using thermal scanning probe lithography, a high-resolution (pixel pitch = 6.5 µm) β-Bi 2 SeO 5 /Bi 2 O 2 Se phototransistor array is fabricated and its imaging capabilities are demonstrated. The results establish an effective defect-engineered strategy with in situ large-area growth capability of β-Bi 2 SeO 5 and high-resolution device patterning, making β-Bi 2 SeO 5 /Bi 2 O 2 Se a promising photoresponsive platform for advanced optoelectronic devices.
研究领域:
光电子学
·
材料科学
·
纳米技术
·
半导体物理
·
器件工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Nano Materials
·
2020
·
IF 0
He Tian,Xiancheng Meng,Juehan Yang,Chao Fan,Shuo Yuan,Xia An,Chun Sun,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Zhongming Wei,Erping Li
Two-dimensional (2D) nanomaterials have been attracting intensive interest due to their unique physical and optoelectronic properties. Van der Waals nanolayered heterostructures based on different 2D nanomaterials provide a state-of-the-art platform for investigating the physical phenomena and have extended the applications of 2D nanomaterials, leading to an era of next-generation high-performance electronic and optoelectronic technology. Herein, vertical 2D SnS/SnS2 p–n and SnSe2/SnS2 n–n nanolayered heterostructures are constructed by exfoliating individual materials and stacking them artificially. The two types of back-gate field-effect phototransistors show clear rectifying behaviors with the existence of band offset and excellent optoelectronic performances. The SnS/SnS2 p–n nanolayered heterostructure shows an ambipolar behavior with a hole mobility of 6.96 cm2·V–1·s–1 and electron mobility of 0.68 cm2·V–1·s–1, while the SnSe2/SnS2 n–n nanolayered heterostructure shows an intense n-type behavior with electron mobility of 3.78 cm2·V–1·s–1 and a high on/off ratio of over 105. Interestingly, due to the band alignments and built-in potentials in the two types of nanolayered heterostructures, the phototransistors exhibit enhanced responsive performances to illuminations of three-primary-color lasers (λ = 405, 532, and 650 nm) compared to the individual components. The SnS/SnS2 phototransistor shows a high photoresponsivity of 3567 A W–1, a high detectivity of 3.64 × 1013 Jones, and a fast response time of 0.8 ms. The SnSe2/SnS2 phototransistor also exhibits a high photoresponsivity of 1793 A W–1 and a fast response time of 15.4 ms.
研究领域:
材料科学
·
纳米技术
·
光电技术
✓ 已验证
产品关联
DOI
CHEMISTRY OF MATERIALS
·
2021
·
IF 9.811
Huihuang Huang,Li Jiang,Jiali Peng,Yiming Qi,Songxue Bai,Qianqian Lin
Organic optoelectronics has progressed excitingly in recent years, mainly due to the innovation of donor and acceptor systems. Organic photodetectors based on novel semiconductor materials and well-designed device architectures have also been reported with improved device performance. However, most of them were photodiodes, and it is challenging to integrate them into the well-established readout circuits. Organic phototransistors are mainly based on the hybrid strategy, composed of either hybrid films or multilayer device structures, which complicates charge transfer and charge transport. Most of the organic devices also suffer from poor stability. In this work, we introduce a recently developed p-type copolymer, D18, to fabricate high-performance phototransistors. D18 possesses excellent charge generation, high mobility, and unipolar charge transport, which fulfill the generic design rule of organic phototransistors. The optimized phototransistors based on D18 exhibited extremely low dark current (∼10 pA) and noise (∼10 fA/Hz1/2), a high detectivity of 4 × 1013 Jones, a swift response of <5 ms, and excellent device stability. We also demonstrated flexible phototransistors with decent performance metrics, indicating great potential for next-generation solution-processed photodetectors and flexible electronic devices.
研究领域:
有机电子学
·
材料科学
·
光探测器
·
柔性电子
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2024
·
IF 8
Zhixiang Jiang,Yuanhong Gao,Wei Hui,Yang Feng,Meili Xu,Jinxiong Li,Feng Jiang,Xiaopeng Zhang,Jianing Wang,Hong Meng,Wei Huang
Lead sulfide colloid quantum dots (PbS QDs) offer great opportunities to revolutionize large-area short-wave infrared (SWIR) detection technologies due to high absorption coefficients and spectral selectivity. However, a critical issue for QDs-based SWIR detectors is high dark current noise due to thermal carriers and the large amounts of surface defect states induced by the ligand exchange process, which hinders the improvement of the room temperature detectivity and linear dynamic range. Herein, it is demonstrated that these dilemmas can be overcome by adopting a novel hybrid-layered phototransistor device architecture composed of a self-assembly high-mobility organic conduction channel and a bulk heterojunction infrared absorber containing PbS QDs as sensitizers. Strong photo absorption in the photoactive layer creates photogenerated charges that are transferred to the conduction channel, where they recirculate many times due to the long trapped-electron lifetime in the photoactive layer and the high carrier mobility of the channel. Therefore, low dark current noise and high photoconductive gain are achieved by both electrical gating and photodoping for carrier-density modulation of phototransistors. Finally, an optimized SWIR phototransistor device with a low room-temperature dark current of 7 pA and a high detectivity of 8 × 10 12 Jones under 1650 nm light illumination is demonstrated.
研究领域:
材料科学
·
光电技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2025
·
IF 5.1
Gaoning Fan,Weishuai Duan,Mengjiao Dong,Xueting Luo,Pengyu Zhou,Chun Sun,Yonghui Zhang,Mengjun Wang,Chao Fan
As a member of two-dimensional materials, tin disulfide (SnS2) holds great potential for highly sensitive detectors used in high-resolution, low-power imaging. Nevertheless, SnS2-based detectors face challenges, such as a narrow detection range, low responsivity, and slow response speed. In this work, gate-modulated phototransistors based on a tin monoselenide/tin disulfide (SnSe/SnS2) heterostructure were fabricated, demonstrating a spectral response from visible to near-infrared. The phototransistors exhibited a maximum responsivity of 2667.1 A W−1 and an extremely high detectivity of 1.02 × 1013 cm Hz1/2 W−1 under 405 nm illumination. Additionally, they exhibited an extremely high responsivity of 537.6 A W−1 and a high external quantum efficiency of 78.3 × 104% under 850 nm illumination. The photodetection performance could be modulated by the back-gate voltage. At a back-gate voltage of 50 V, the phototransistor achieved an enhanced responsivity of 4002.9 A W−1, surpassing detectors based on individual components and most other two-dimensional materials. This work provides an effective strategy for achieving gate-modulated photodetection performance and broadens the scope of applications for SnS2-based detectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
Nano Energy
·
2024
·
IF 16.8
He Shao,Yu Ji,Ruiheng Wang,Jing Liu,Yueqing Li,Benxin Liu,Wen Li,Yannan Xie,Linghai Xie,Johnny C. Ho,Wei Huang,Haifeng Ling
Effectively handling massive information in complex lighting conditions is crucial for security-focused machine vision, as it relies on precise image feature detection and encryption/decryption to ensure integrity and confidentiality. Traditional hardware, primarily based on complementary metal-oxide-semiconductor (CMOS) technology, struggles with the complexity of processing tasks around the clock. To address this challenge, a ternary organic heterostructure visuomorphic phototransistor was tailored for adaptive critical image processing. The light coupling induced by the porous heterostructural layer enhances the light absorption efficiency by 2.5-fold. Our phototransistor exhibits bidirectional photoresponse across the visible and near-infrared (NIR) spectral regions, enabling adaptive edge detection in varying lighting conditions with precision above 85 %. The phototransistor array facilitates image encryption/decryption with a superior accuracy of 12 %/90 % compared to existing counterparts. This ternary organic hetero-integration combines multiple response modes, enabling compact and efficient critical feature processing.
研究领域:
材料科学
·
光学工程
·
机器视觉
✓ 已验证
产品关联
DOI
高影响因子
ACS Photonics
·
2017
·
IF 6.756
Haiting Zhang,Yating Zhang,Xiaoxian Song,Yu Yu,Mingxuan Cao,Yongli Che,Zhang Zhang,Haitao Dai,Junbo Yang,Guizhong Zhang,Jianquan Yao
We fabricated a vertical field effect phototransistor with Au/Ag nanowires as the transparent source electrode and with vertically stacked layers of poly(3-hexylthiophene) (120 nm) and lead sulfide quantum dots (380 nm), which formed heterojunctions. The built-in electric field in the layered heterojunction aids the separation of photoinduced excitons, while the short channel enables efficient carrier transport across the active region. Both of these benefits enable a high photoperformance and fast photoresponse. This vertical phototransistor can be operated at room temperature with a low operation voltage of −1 V and is therefore energy-efficient. Further, it has a wide response spectrum from 400 to 2100 nm, a high photoresponsivity of more than 9 × 104 AW–1, and a high detectivity of up to 2 × 1013 Jones (cm Hz1/2 W–1) under infrared illumination. Additionally, this vertical phototransistor had a response time of 9 ms, which is faster than a previously reported lateral field effect phototransistor based on poly(3-hexylthiophene)/lead sulfide quantum dots. The vertical architecture combined with the layered heterojunction approach provides a new, facile way of fabricating high performance devices.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2024
·
IF 6.3
Chandrasekar Perumalveeramalai,Jie Zheng,Jagadeesh Babu Bellam,SVN Pammi,Xiaoming Zhang,Chuanbo Li
Multi-wall carbon nanotube (MWCNT) thin film has been identified as the ideal electrode material due to their inherent electronic and optoelectronic properties. We have successfully fabricated a vertical field-effect phototransistor (vFEpT) using MWCNT as a porous source electrode. The optimized MWCNT electrodes showed an electrical conductivity of 3.92 × 10 3 S/m and a sheet resistance of about 490 Ω/□, with a layer thickness of about 520 nm. The as-fabricated transistor has p-type conductivity because of the unintentional doping of the PbS layer and the intrinsic hole transport property of the MWCNT network. Additionally, the device shows excellent photoelectric performance at 30 mWcm −2 of illumination, with a high current density of 2.3 × 10 −3 Acm −2 . With a high conductivity network for carrier transfer and separation, the special characteristics of MWCNT nanoporous thin film enable improved photoelectric properties, such as a high photoresponsivity of 3.16 AW −1 and a specific detectivity of 2.33 × 10 12 Jones when illuminated at 808 nm light irradiance with an intensity of 0.6 µW/cm 2 . Furthermore, the device demonstrated a steady dynamic response to an optical signal, with rising and falling times of 31.8 ms and 32.9 ms, respectively. This work presents a new method for creating high-performance vertical phototransistors with MWCNT as the source electrode.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED MATERIALS
·
2023
·Vol. 35
·期 26
·2212118
·
IF 29.4
Dingdong Xie,Ge Gao,Bobo Tian,Zhiwen Shu,Huigao Duan,Wei-Wei Zhao,Jun He,Jie Jiang
Visual adaptation allows organisms to accurately perceive the external world even in dramatically changing environments, from dim starlight to bright sunlight. In particular, polarization-sensitive visual adaptation can effectively process the polarized visual information that is ubiquitous in nature. However, such an intriguing characteristic still remains a great challenge in semiconductor devices. Herein, a novel porous metal–organic-framework phototransistor with anisotropic-ReS 2 -based heterojunction is demonstrated for polarization-sensitive visual adaptation emulation. The device exhibits intriguing polarized sensitivity and an adaptive ability due to its strong anisotropic and trapping–detrapping characteristics, respectively. A series of polarization-sensitive neuromorphic behaviors like polarization-perceptual excitatory postsynaptic current, multimode adjustable dichroic ratio and reconfigurable sensory adaption, are experimentally demonstrated through this porous heterojunction phototransistor. More importantly, with the polarization–electricity cooperation strategy, advanced polarization-sensitive visual adaptation with strong bottom-gate control and environment dependence is successfully realized. These results represent a significant step toward the new generation of intelligent visual perception systems in autonomous navigation and human–machine interaction, etc.
研究领域:
材料科学
·
光电技术
·
仿生学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Optical Materials
·
2024
·
IF 8
Xiujuan Wang,Shuang Gao,Zhuo Han,Xiaodong Zhang,Haoran Chen,Kang Xiang,Muyang Ye,Junxing Qiu,Chunyan Wu,Xiaoping Yang,Tianci Zhang,Qian Gao,Kun Xing
Heterojunction phototransistor (HPT) is considered the most promising detector technology in weak ultraviolet (UV) signal detection due to its inherent internal gain through transistor action. However, achieving high-performance self-powered UV HPTs remains a significant challenge. In this study, a high-performance self-powered p + -GaN/n − -ZnO/Au UV HPT with ZnO serving as the floating base is cleverly designed. The device features a unique back-to-back configuration of the p + -GaN/n − -ZnO heterojunction and n − -ZnO/Au Schottky junction, along with an ultrathin ZnO base layer of a 3D nanowire network structure. This design enables the fabricated p + -GaN/n − -ZnO/Au UV HPT to operate in a self-powered mode with exceptional performance metrics. Under zero bias, the device exhibits outstanding characteristics including ultralow dark current of 1.7 × 10 −13 A, remarkable I photo /I dark ratio of 10 6 , fast response speed (t r = 150 µs / t f = 250 µs), high responsivity of 9.74 A W −1 , and detectivity of 1.58 × 10 14 Jones, representing the best result achieved for UV HPTs thus far at zero bias. Moreover, the fabricated UV HPT is successfully demonstrated in solar-blind imaging and UV communication systems without the need for an external power supply. This work presents effective and practical design strategies for achieving high-performance self-powered UV HPTs.
研究领域:
材料科学
·
光电子学
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）