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Enhanced Photoelectrochemical Response and Stability of Au/ZnO/C3N4 Electrode through In Situ Growth of the C3N4 Layer on Electrodeposited Au/ZnO Electrode

Hanben Zhou,Run Liu

A composite was formed to improve the photo-generated carrier separation rate of semiconductor oxides synthesized by in-situ electrodeposition and calcination. ZnO/g-C3N4 was deposited on the surface of Au/FTO through simultaneous adsorbing during electrodeposition and calcination. Characterization showed the g-C3N4 layer was an ultrathin protective film above the surface of ZnO. The composite Au/ZnO/g-C3N4 had a photocurrent up to 0.24 mA/cm2 at 1.23V vs RHE, 70% higher than bare ZnO. In this structure, the holes of ZnO generated by lights can transfer to the g-C3N4 layer and electrons can transfer to the gold layer, accelerating charge transfer and reducing the accumulation of holes on the surface of ZnO, enhancing the photoresponse and stability. The separation of holes by g-C3N4 is a critical part of this structure.