ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Haowei Lin,Kai Chen,Mingke Li,Beibei Ji,Yaohui Jia,Xinyu Liu,Jinling Li,Weiqiang Song,Chunlong Guan
We demonstrate that a novel photodetector is constructed by CdS/poly(p-phenylene vinylene) (PPV) homogeneous hybrid nanowire arrays via a simple template-assisted electrochemical codeposition approach. Owing to the well-matched energy levels between CdS and PPV, the recombination of photogenerated electrons and holes in CdS/PPV hybrid nanowire arrays is greatly inhibited. It is found that the homogeneous hybrid nanowire arrays exhibit remarkably enhanced photoelectric response and the ON/OFF ratio by 17 times compared to the individual CdS component. More importantly, the CdS/PPV hybrid nanowire arrays are observed with significant spectral selectivity especially for green light under 545 nm. In addition, a straight linear relationship is obtained between the ON/OFF ratios and the illumination intensities, implying that the quantitative detection of illumination intensity can be achieved. The new as-prepared homogeneous hybrid organic/inorganic semiconductor nanowire arrays have a bright prospect for applications in high-sensitivity and high-speed green photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 32
·12571-12581
·
IF 5.7
Kaiyi Zhang,Fang Wang,Lei Zheng,Junqing Wei,Yongxu Hu,Yangyang Xie,Hongling Guo,Fengpu Zhang,Xin Lin,Zewen Li,Tianling Ren,Zhitang Song,Kailiang Zhang
2D Bi2O2Se is an intriguing building block for next-generation optoelectronic devices owing to its ultrahigh electron mobility and ultrabroadband photodetection capability. However, fully exploiting its advantages in advanced optoelectronic applications remains greatly challenging owing to the lack of in-depth understanding of the morphological evolution of Bi2O2Se crystals and efficient methods for enhancing their photoresponse. Herein, we developed a novel “cage-confinement” technique to achieve dimensionality-tunable growth of Bi2O2Se crystals in a space-confined CVD system. It can effectively control the key parameter of determining the dimensionality of crystals, referred to as the elastic strain energy of nucleation (ΔGs), by tuning the active area size of Bi2O3 seeds at a suitable flow rate of carrier gas. Furthermore, based on an optimized van der Waals transfer technique of crystals and electrodes, a sheet-shaped phototransistor of Bi2O2Se has a high responsivity (R) of ∼74 000 A W−1 and detectivity (D*) of ∼4.0 × 1011 Jones. Meanwhile, a wire-shaped device demonstrates an impressive R value of 300 000 A W−1, D* value of 3.9 × 1012 Jones and photoconductance gain (Gph) of 1.2 × 105. These results surpass most reported Bi2O2Se-based detectors and pave the way for the applications of 2D layered semiconductors in advanced optoelectronic devices and technologies.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2020
·Vol. 8
·期 19
·6470-6477
·
IF 7.059
Wen Zeng,Xiaoguo Fu,Li Yu,Tingting Shi,Pengyi Liu,Jianbin Xu,Jian Chen,Chen Qiulan,Xiaomu Wang,Weiguang Xie
The preparation of a pure phase has long been the key obstacle for the fundamental research and device application of Wadsley vanadium oxides (VnO2n+1) due to the mixed-valence feature and closeness in thermodynamic phase diagrams. Herein, we demonstrate a melt-assisted pyrolysis process to prepare pure V6O13 (n = 6) using a V2O5 precursor film. V6O13 with an atomic flat (00l) terrace and length up to a millimeter was prepared on a c-cut sapphire surface. Both ex situ and in situ real-time investigations on the growth process reveal that the melting and decomposition of V2O5 started as synchronization processes for the nucleation of V6O13. The endothermic melting process provides the main driving force for the rapid growth of V6O13 crystals along the melt/solid interface. The as-prepared V6O13 crystal sheets show a broadband photoresponse capability (0.4–8.8 μm) with a rise/fall time of 42 ms/50 ms, and the maximum EQE of 5.4 × 104%. Spatial photocurrent imaging reveals that both photoelectric and bolometer effects contribute to the photoresponse. This study offers a feasible and scalable method for the preparation of high quality mix-valence vanadium oxide for future opto-electrical and energy storage devices.
研究领域:
材料科学
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光学工程
✓ 已验证
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 41
·2303847
·
IF 19
Su-Yun Zhang,Zhimin Mao,Duo Zhao,Chunmei Wang,Wei Tang,Yifei Xie,Chenxu Kang,Huawei Liang,Haoliang Liu,Yu-Jia Zeng
2D ferromagnetic semiconductors are key to next-generation spintronic devices in the post-Moore era. The combination of ferromagnetic and optoelectronic properties offers exciting opportunities for advanced multifunctional devices in spin-optoelectronic applications. Herein, the authors synthesize 2D van der Waals (vdW) Co x Sn 1- x S with ferromagnetism and photoresponse through a bottom-up reaction, which has a high yield compared to typical mechanical exfoliation. Ferromagnetic ordering is realized in 2D vdW semiconductor SnS by Co doping at the Sn sites. Magnetic properties are thoroughly studied at different doping concentrations, and first-principles calculations are further performed to reveal the magnetism origin and spin interactions. In particular, a low Gilbert damping of 1.69 × 10 −3 is obtained in vdW Co x Sn 1− x S through ferromagnetic resonance. In addition, photodetectors based on Co x Sn 1− x S quantum dots are demonstrated. These studies establish a promising semiconductor with both ferromagnetic ordering and photoelectric response, which provides unprecedented opportunities in spintronic-photonic integrated applications.
研究领域:
材料科学
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凝聚态物理
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半导体器件
✓ 已验证
产品关联
DOI
高影响因子
Advanced Optical Materials
·
2025
·Vol. 13
·期 17
·2500216
·
IF 7.2
Xin Wang,Le-Yang Dang,Xu Zhang,Jia-Qi Zhu,Gui-Gen Wang
Doping can effectively adjust the energy band structure of a semiconductor, thereby influencing its electrical and optical properties. In this study, density functional theory is employed to calculate the crystal structure, electronic configurations, energy bands, and optical properties of tellurium-doped Bi 2 O 2 Se (Bi 2 O 2 Se 1-x Te x ), demonstrating that Te substitution lowers the conduction band, reducing the bandgap. Then 2D Bi 2 O 2 Se 1-x Te x nanosheets are synthesized via organic ion template-guided solution growth method, with Te doping controlled by the Te/Se molar ratio. Optical spectroscopy confirmed that tellurium doping significantly modulates the electronic properties of Bi 2 O 2 Se. When the doping molar concentration is 30%, its bandgap decreases to 0.57 eV. Therefore, Bi 2 O 2 Se 1-x Te x nanosheet-based photodetector demonstrates obvious enhancement of the photoelectric response in the near-infrared region. Notably, Bi 2 O 2 Se 0.7 Te 0.3 photodetector demonstrates broadband photosensitivity across 650–1550 nm, with high responsivity of 32.87 A W −1 and enhanced detectivity of 8.89 × 10 9 Jones at 1060 nm. The device also features a short response time of 16.8/11 µs at 1550 nm. Moreover, the photo-response of the detector shows reliable working stability. Finally, the photodetector is utilized for single-pixel imaging, showcasing its high-contrast infrared light detection capability. These results indicate that Bi 2 O 2 Se 1-x Te x is a promising material for high-sensitivity infrared light detection applications.
研究领域:
材料科学
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凝聚态物理
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光学工程
✓ 已验证
产品关联
DOI
高影响因子
Chemistry-An Asian Journal
·
2021
·Vol. 16
·期 22
·3748-3753
·
IF 4.568
Ronghua Yi,Jin Wang,Xiaoping Yue,Yan Liang,Zhuoyao Li,Huixiang Sheng,Mengdan Guan,Yameng Zhu,Qizeng Sun,Li Wang,Xiao Huang,Gang Lu
Graphical Single-crystalline Bi 9 O 7.5 S 6 thin nanosheets were successfully synthesized by using a solvothermal method. The thin Bi 9 O 7.5 S 6 nanosheets are used as active layer in an optoelectronic device, which exhibits a sensitive photoelectric response to light in a wide range of 400–800 nm. Bismuth-based compounds possess layered structures with a variety of stacking modes, endowing the compounds with diverse properties. As one type of bismuth oxysulfides, Bi 9 O 7.5 S 6 nanocrystals has great applications in photodetection; however, the responsivity of bulky Bi 9 O 7.5 S 6 is limited due to the poor charge separation. Herein, single-crystalline Bi 9 O 7.5 S 6 thin nanosheets are successfully synthesized by using a solvothermal method. The thickness of the obtained Bi 9 O 7.5 S 6 nanosheets is down to 15 nm and can be easily tuned by varying the reaction period. Moreover, the Bi 9 O 7.5 S 6 nanosheets show strong light absorption in the visible and near infrared range, making it a promising candidate in optoelectronics. As a demonstration, the thin Bi 9 O 7.5 S 6 nanosheets are used as active layer in an optoelectronic device, which exhibits sensitive photoelectric response to light in a wide range of 400–800 nm. The responsivity of the device reaches up to 1140 μA W −1 , and the performance of the device is stable after long-period illumination. This work demonstrates a great potential of the thin Bi 9 O 7.5 S 6 nanosheets in optoelectronic devices, and these nanosheets may also be extended to various optoelectronic applications.
研究领域:
材料科学
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光学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Chuanqi Liu,Dingyu Yang,Haibo Tian,Wen Zhang,Jun Zhu
The CsPbX 3 perovskites have demonstrated promising applications in the field of X-ray detection. Appropriate element doping to substitute Pb in CsPbX 3 not only improves the photoresponse performance of the resulting material but also reduces the Pb content for achieving environmental protection. Herein, X-ray detectors based on Sr-doped CsPb 1-x Sr x Br 3 thick films were developed. The effects of Sr doping concentration were investigated. The incorporation of Sr increased the density of the CsPbBr 3 thick film and modulated the bandgap of the materials. CsPb 1-x Sr x Br 3 exhibited good optical responses at different bias voltages and X-ray doses. The X-ray response improved as the Sr-doping concentration increased. Therefore, the partial substitution of Sr into CsPbBr 3 is suitable for reducing the Pb content in X-ray detectors. Furthermore, the development of CsPb 1-x Sr x Br 3 thick films provides a new strategy for the detection of X-rays.
研究领域:
材料科学
·
医学成像
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF CHEMICAL CRYSTALLOGRAPHY
·
2022
·Vol. 53
·期 1
·145-151
·
IF 0.582
Zhang Lirong,Qi Feiyan,Shele Muge,Namila E.,Qi Liming,Baiyin Menghe
One quaternary selenidoantimonate of [Mn(en) 3 ]CdSb 2 Se 5 ( 1 ) (en = ethylenediamine) was prepared under 1,2-propanediamine condition by mild solvothermal method. Single-crystal X-ray diffraction analysis reveals that compound 1 crystallizes in the monoclinic space group C 2/c. Its structure consists of infinite 1D [CdSb 2 Se 5 ] n 2n− anionic chains and [Mn(en) 3 ] 2+ cations. Meanwhile, “Z” shaped eight-membered [Cd 2 Sb 2 Se 4 ] and six-membered [CdSb 2 Se 3 ] rings are alternately found. As estimated from UV–Vis absorption spectrum, the band gap of 1 is 2.58 eV. Compound 1 also showed rapid response and excellent reproducibility based on photoelectric test. In addition, the magnetic and other properties of 1 were studied. Graphical Abstract The manuscript describes the synthesis, crystal structure, single-crystal X-ray diffraction, elemental analysis, photoelectric response, thermogravimetric analysis, magnetic properties, infrared spectroscopy and UV-Vis diffuse reflectance spectroscopy of [Mn(en) 3 ]CdSb 2 Se 5 . The photoelectric response of compound 1 was explored, and a highly repetitive and stable photocurrent curve was found, indicating that 1 is a typical p-type semiconductor. In addition, the magnetism of compound 1 was also studied, which showed that 1 had antiferromagnetic behavior.
研究领域:
材料科学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2024
·
IF 5.3
Kunhong Zhou,Xueyan Hu,Gaoyu Chen,Dongdong Xu,Xiangxing Xu
Chiral semiconductors, with their distinct photoelectric responses to left- and right-handed circularly polarized light (CPL), are emerging as promising candidates for chiroptical sensing applications. This trend underscores the need to develop chiroptical photoelectric films with tunable handedness. In this study, we report the preparation of parallel-aligned ZnO nanowires (NWs) through oriented electrospinning and subsequent pyrolysis of precursor NWs. Chiral Moiré stacking films were created by stacking ZnO NWs with a controlled left-/right-handed rotation angle between successive layers. The film structural parameters and circular dichroism (CD) spectra were optimized. CPL photodetectors were developed using these chiroptical ZnO NW films and their hybridization with CsPbBr3 perovskite. The photodetector performance was investigated with a focus on responsivity (R), photodetectivity (D*), and the photocurrent asymmetry factor (gIph). Furthermore, discussion on the chiroptical and optoelectronic mechanisms intrinsic to these devices was conducted, shedding light on their potential for advanced CPL photodetection applications.
研究领域:
材料科学
·
光学工程
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
SYNTHETIC METALS
·
2022
·
IF 4
Dongna Zou,Ruxangul Jamal,Tursun Abdiryim,Lielie Liu,Haile Liu,Nana Fan
Here, the ZnO-NRs/poly(EDOT-Pyridine-EDOT) core/shell heterostructure nanoarrays was prepared by the electrochemical polymerization of D-A-D type monomer (the 3,4-ethylenedioxythiophene(EDOT, donor) endcapped trimer with the pyridine(acceptor) as internal unit) on ZnO-NRs. This core/shell heterostructure nanoarrays was combined with ZnO-NRs to form p-n heterojunction for UV photodetector by face to face clamping of the two electrodes (ZnO-NRs/poly(EDOT-Pyridine-EDOT) and ZnO-NRs). The current-voltage and current-time curves under bias voltages of 1–6 V were tested, and the photoresponses of heterojunctions and bias voltages to UV light irradiation were systematically studied. The results showed that the poly(EDOT-Pyridine-EDOT) (poly(BPE)) uniformly covered ZnO-NRs and formed a core-shell structure, which was beneficial to increase the contact area between ZnO-NRs and poly(BPE). The ZnO-NRs/poly(BPE) heterojunction effectively improved the response performance of the UV photodetector and exhibited the highest photoresponsivity under 5 V bias voltage. The responsivity (R), detectivity (D*) and external quantum efficiency (EQE) were 150.87 A/W, 2.18 × 10 12 Jones and 51,351.5 %, respectively.
研究领域:
材料科学
·
光电材料与器件
✓ 已验证
DOI
高影响因子
ACS Photonics
·
2022
·
IF 7.077
Yuting Zou,Yaru Shi,Bin Wang,Mingxiu Liu,Junru An,Nan Zhang,Liujian Qi,Weili Yu,Dabing Li,Shaojuan Li
Organolead trihalide perovskites have drawn a great deal of interest for application in electronic and optoelectronic devices owing to their exceptional physical properties. However, the majority of reported perovskite field-effect transistors (FETs) demonstrates unsatisfactory performance, such as poor mobility, low on/off ratio, and low current density, which remains a significant obstacle for their potential applications. In this work, we report a vertical FET (VFET) composed of a single-crystalline MAPbBr3 perovskite Schottky junction, which effectively modulates the intrinsic carrier characteristics and enhances the performance of the device by reducing channel length and weakening the electrostatic screening effect. The device exhibits excellent performance with a high on/off ratio (104), high carrier mobility (23.4 cm2 V–1 s–1), and current density of 2.69 A cm–2 at room temperature. Importantly, the regulation of the drain voltage plays a similar role to that of the gate voltage in our device, which is attributed to the doping of perovskite with regulation of the source contact/perovskite Schottky junction. With the drain modulation, a superior photoresponse with enhanced responsivity of 16 A W1– and a low dark current are simultaneously obtained under light illumination, leading to a high detectivity of 1014 Jones. Our research may open up new possibilities for perovskite electronics, such as logic applications for various flexible, wearable, and disposable devices.
研究领域:
材料科学
·
电子工程
·
光电子学
✓ 已验证
DOI
高影响因子
Micro and Nanostructures
·
2025
·
IF 3
Zhou Huang,Feng Nan,Zhilong Zhang,Weiyu Feng,Lei Zhou
Silicon (Si) photodetectors are of great importance due to their many scientific and industrial applications, including optical interconnects, spectroscopy, optical communications, and semiconductor device processing. However, the responsivity of Si photodetectors drops sharply at shorter wavelengths due to their high light absorption coefficient and increased reflectivity in this range. In this report, a hybrid Si photodetector architecture is demonstrated by integrating an ultrathin fluorine- and nitrogen-co-doped carbon quantum dots (fnCQDs) layer using a facile fabrication technique. The results show that the hybrid device achieves a broadband photoresponse. The optimized incorporation of fnCQDs enhances the short-wavelength range responsivity between 300 nm and 550 nm, while simultaneously maintaining nearly identical fast rise times at the peak as the conventional bare Si device under 0 V working voltage. Moreover, the photoresponsivity and gain of the engineered optimal device are found to be approximately 0.012 A/W and 328, respectively, at a wavelength of 365 nm. Additionally, the maximum photocurrent-to-dark current ratio (@365 nm) of this hybrid device under a 0.01 V bias reaches approximately 6200, nearly six times greater than that of the standard reference device. The proposed approach and findings demonstrate the significant potential of fnCQDs for applications in hybrid photodetectors and related technologies.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
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