MACROMOLECULES
·
2024
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IF 5.1
Hao Zhan,Hao Zheng,Yongjie Dong,Qingqing Zhao,Xuebing Luo,Juan Peng
Despite recent advances in all-conjugated poly(3-alkylthiophene) (P3AT)-based block copolymers (BCPs) with identical backbones, investigations into the phase behavior of conjugated donor–acceptor (D–A) BCPs containing two disparate backbones are somewhat limited. Herein, we report tailoring the phase behavior of a series of new all-conjugated D–A BCPs, i.e., poly(3-alkylthiophene)-block-poly(isoindigo-alt-bithiophene) (P3AT-b-PII2T), by tuning their intrinsic factors (alkyl chains of P3ATs and block weight ratio of P3AT to PII2T) in conjunction with post thermal annealing. P3ATs include poly(3-hexylthiophene) (P3HT), poly(3-octylthiophene) (P3OT), and poly(3-decylthiophene) (P3DT), where the alkyl chain lengths gradually increase and approach that of PII2T. When the block weight ratio of P3AT to PII2T was approximately 1:1, the larger alkyl chain difference between the P3AT and PII2T blocks and the increased thermal annealing temperature favored microphase segregation (i.e., producing respective P3AT and PII2T crystals) over the crystallization of P3AT and PII2T as one block. Moreover, when the block weight ratios of P3OT to PII2T in P3OT-b-PII2T were changed to approximately 4:1 and 1:4, the major component dominated the crystallization of the entire BCPs, with depressed crystallization of the other minor component. The rule that similar alkyl chain length and a comparable block weight ratio between P3AT and PII2T favor their crystallization as one block can be readily extended to another conjugated D–A BCP, that is, poly(3-alkylthiophene)-block-poly(naphthalene diimide-alt-bithiophene) (P3AT-b-PNDI2T). This study highlights the phase behaviors in P3AT-b-PII2T and P3AT-b-PNDI2T BCPs tuned by synergistic molecular engineering and post thermal treatment, which could strengthen the fundamental understanding of conjugated D–A BCPs for their application in organic optoelectronic devices.
研究领域:
材料科学
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高分子化学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2017
·
IF 9.353
Longfei Ruan,Wei Shen,Aifei Wang,Aishuang Xiang,Zhengtao Deng
Controlled synthesis of colloidal all-inorganic lead halide perovskite semiconductor nanocrystals, such as CsPbBr3, with tunable size, shape, composition, and crystalline phase have recently attracted wide interest for photonic and optoelectronic applications. Herein, we report a new strategy for using alkyl-thiols to induce the transformation of CsPbBr3 to perovskite-related cesium lead halide (CsPb2Br5) with controlled morphology and a crystalline phase at room temperature. By rational tuning the ratios of the alkyl-thiol ligands to alkyl-amines or to alkyl-acids, the as-synthesized colloidal nanocrystals can be rationally controlled from orthorhombic crystalline-phase CsPbBr3 to tetragonal-phase CsPb2Br5 nanosheets and nanowires with high yield. Significantly, the tetragonal CsPb2Br5 nanowires and nanosheets have high stability in high-temperature and high-humidity environments. These findings may open new directions for large-scale synthesis of shape- and crystalline phase-controlled perovskite nanocrystals for high-performance, low-cost optical electronic and optoelectronic devices.
研究领域:
材料科学
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纳米技术
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光电子学
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化学
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半导体物理
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Zhongmin Yin,Shanyong Chen,Youwei Guan,Qinqin Ran,Qingsong Zhang,Xingwu Yan,Rong Jin,Hong Yu,Lu Li,Junsheng Yu
Highly dispersed copper nanowire (CuNW) is an essential prerequisite for its practical application in various electronic devices. At present, the dispersion of CuNW is almost realized through the steric hindrance effect of polymers. However, the high post-treatment temperature of polymers makes this dispersion mechanism impractical for many actual applications. Here, after investigating the relationship between the electrostatic dispersion force and influence factors, an electrostatic dispersion mechanism is refined by us. Under the guidance of this mechanism, high dispersion of CuNW and a record low post-treatment temperature (80 °C) are realized simultaneously. The high dispersity endows CuNW with good stability (−45.66 mV) in water-based ink, high uniformity (65.7 ± 2.5 Ω sq–1) in the prepared transparent conducting film (TCF) (23 cm × 23 cm), and industrial film preparation process, which are the issues that hinder the widespread application of CuNW-based TCF at present. The low post-treatment temperature makes the application of CuNW possible on any substrate. In addition, the charge modifier, 2-mercaptoethanol, enables CuNW to resist oxidation well. Finally, flexible optoelectronic devices employing the CuNW film as the electrode are fabricated and show efficiencies comparable to those of optoelectronic devices on indium tin oxide/glass.
研究领域:
材料科学
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电子工程
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
InfoMat
·
2024
·
IF 22.7
Jianmin Yang,Li Chang,Hongkai Zhao,Xiqi Zhang,Ziquan Cao,Lei Jiang
Silver nanowire (AgNW) networks hold great promises as next-generation flexible transparent electrodes (FTEs) for high-performance flexible optoelectronic devices. However, achieving large-area flexible AgNW network electrodes with low sheet resistance, high optical transmittance, and a smooth surface remains a grand challenge. Here, we report a straightforward and cost-effective roll-to-roll method that includes interface assembly/wetting-induced climbing transfer, nanowelding, and washing processess to fabricate flexible ordered layered AgNW electrodes with high network uniformity. By manipulating the stacking number of the interfacially assembled AgNW monolayer, we can precisely tailor and balance the transparency and the conductivity of the electrodes, achieving an exceptional Figure of Merit (FoM) value of 862. Moreover, the ordered layered structure enhances surface smoothness, compared with randomly arranged structures. To highlight the potential of these ordered layered AgNW network electrodes in flexible optoelectronic devices, we successfully employ them as highly sensitive strain sensors, large-area flexible touch screens, and flexible smart windows. Overall, this work represents a substantial advance toward high-performance FTEs over large areas, opening up exciting opportunities for the development of advanced optoelectronic devices.
研究领域:
材料科学
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纳米技术
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光学工程
✓ 已验证
产品关联
DOI
高影响因子
Results in Physics
·
2023
·
IF 5.3
Chaochao Qin,Jie Li,Jian Song,Shuhong Ma,Jicai Zhang,Guangrui Jia,Zhaoyong Jiao,Zunlue Zhu,Yuhai Jiang,Zhongpo Zhou
Energy transfer plays an essential role in inorganic semiconductor nanocrystal-chromophore hybrids which show potential applications in light collection and emitting. The understanding of the fundamental mechanics of energy transfer processes is vital to enhance the performance of light-harvesting optoelectronic devices. Here we report the effect of varying donor sizes on energy transfer from perovskite nanocrystals to chromophore molecules. Both single energy transfer and triplet transfer mechanisms have been identified to occur between CsPbBr 3 quantum dots linked to a Rhodamine B dye. The ease of adjusting optical properties via particle-size controlling provides a particular platform to accommodate excited-state couplings in perovskite-chromophore hybrids.
研究领域:
材料科学
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光学
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纳米技术
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物理化学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2024
·
IF 4.8
Kai Zhang,Ruili Song,Ning Wu,Yunhu Wang,Mingming Zhang,Xilei Chen,Lei Wang,Jun Xing
Graphitic carbon nitride (g-CN) materials exhibit attractive optoelectronic physical properties; however, their low photoluminescence quantum yields (PLQYs) limit their applications in luminescent devices. Here, boron-doped aromatic carbon nitride (B-PhCNx) was synthesized for the first time via direct thermal polymerization of 2,4-diamino-6-phenyl-1,3,5-triazine and boric acid. The impact of B doping and phenyl modifying on the structural and optical characteristics of the samples was investigated in detail. The highest PLQY of 40.7% was achieved in B-PhCN20, which is 6.8 times that of pristine carbon nitride (p-CN). The B-PhCN20-based light-emitting diode demonstrates a maximum luminance of 1494 cd m–2 and a maximum external quantum efficiency of 1.03%, which are 3.5 and 4.9 times that of the p-CN-based device, respectively. Our findings will provide a reference for rationally designing low-cost and high-performance carbon-nitride-based optoelectronic devices.
研究领域:
材料科学
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光电子学
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纳米技术
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物理化学
✓ 已验证
DOI
高影响因子
ACS Applied Nano Materials
·
2022
·
IF 6.14
Xiaoxiang Wu,Yali Liu,Mengge Li,Wenxuan Guo,Tianjian Ou,Cong Xiao,Jiadong Yao,Ying Yu,Yuan Zheng,Yewu Wang
Photodetectors based on two-dimensional materials and their van der Waals (vdW) heterojunctions usually have excellent optoelectronic performance and great potential applications. Herein, gallium (Aladdin, particles, 99.999% trace metal basis), selenium (Aladdin, powder, 99.999% trace metal basis), and iodine (Alfa Aesar, 99.999% trace metal basis) are the raw materials for the growth of gallium selenide (GaSe) single crystals by the chemical vapor transport method, in which iodine is the transport agent. Subsequently, GaSe nanoflakes are exfoliated from the grown bulk GaSe crystals by mechanical exfoliation. The n-Si/p-GaSe van der Waals vertical heterojunctions have been designed and fabricated for photodetection, which show good characteristics including a high responsivity of 1.74 A/W and a fast response/recovery time of 48 μs/88 μs under zero bias owing to their type-II band structure and built-in electric field. The results indicate that n-Si/p-GaSe vdW vertical heterojunctions are promising candidates in future ultrafast optoelectronic devices.
研究领域:
光电子学
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材料科学
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纳米技术
·
半导体器件
✓ 已验证
DOI
高影响因子
ACS Applied Nano Materials
·
2025
·
IF 5.5
Xinran Li,Yuwei Zhong,Habib Ullah,Jian Luo,Lee Li,Ghafar Ali,Alaa G. M. Osman,Xiujian Zhao,Yi Xie
The intrinsic structural lability and limited processability of inorganic halide perovskites heavily hamper their commercial applications. Herein, we develop a facile and scalable room-temperature (RT) water-based procedure for the synthesis of Na–Cu-codoped CsPbIxBr3–x-embedded Pb(OH)I (denoted as the Na–Cu–CsPbIxBr3–x@Pb(OH)I) composite to overcome the above-mentioned bottlenecks. Compared to Na doping, the codoping with Na and Cu leads to a slight shift of the photoluminescence (PL) peak position from ∼612 to 622 nm, increases the PL intensity by 32.5 times, and improves the PL quantum yield from 1% to 5%. Notably, the optimized Na–Cu–CsPbIxBr3–x@Pb(OH)I composite displays outstanding stability under various harsh environments such as soaking in RT water or hot water (up to 90 °C) and annealing at high temperature, which indicates that Pb(OH)I can act as an effective water-blocking and protective encapsulation layer. It is more interesting that the photoluminescence (PL) intensity of Na–Cu–CsPbIxBr3–x@Pb(OH)I can be significantly increased to 2.17 and 1.29 times after soaking the sample in RT water for 35 and 105 days, respectively, and 1.25 times even after immersing in hot water (90 °C) for 6 h, indicating an improved optical property. Meanwhile, the crystal structure and emission wavelength are maintained. The insight of this work is quite beneficial for designing highly stable inorganic perovskite-based nanomaterials for realization in light-emitting devices and other optoelectronic devices.
研究领域:
材料科学
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纳米技术
·
光电子学
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无机化学
·
固体物理学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Meiqi Lin,Linfeng Wei,Xu-Dong Wang,Zhenyu Yang
The optoelectronic tunability and solution processability of colloidal germanium quantum dots (GeQDs) make them highly attractive as active materials for thin film optoelectronics. However, while long-chain aliphatic ligands can effectively protect GeQD surfaces from oxidation and enhance colloidal stability, their insulating nature severely impedes charge carrier transport within the GeQD active layer. In this study, we introduce a solid-state ligand exchange (SSLE) approach using methylammonium iodide (MAI) to replace the insulating oleylamine ligands, thereby enhancing charge carrier mobilities in the GeQD thin film. We demonstrate that a low concentration of MAI effectively substitutes for OAm on GeQD surfaces while preserving the structural integrity of the crystalline core. The resulting MAI-passivated GeQD films exhibit significantly reduced trap densities and enhanced hole and electron mobilities compared with their OAm-passivated counterparts. Furthermore, we fabricate solar cells using a layer-by-layer SSLE process to construct a multilayered GeQD active layer, achieving a power conversion efficiency of up to 1.64 × 10–3 %, a significant improvement over previously reported GeQD photovoltaics.
研究领域:
纳米技术
·
材料科学
·
光电子学
·
半导体物理
·
可再生能源
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Saiyin Hou,Haiqi Chen,Dong Lv,Wei Li,Xuelei Liu,Qiang Zhang,Xinhong Yu,Yanchun Han
Inkjet-printed conductive polymer PEDOT:PSS films have provided a new developing direction for realizing the stretchable transparent electrodes in optoelectronic devices. However, their conductivity and stretchability are limited as the presence of insulating PSS chains, rigid PEDOT conjugated backbone, and stronger inter-chain interactions in the pristine polymer, respectively. Here, we report a PEDOT:PSS film with preferable electrical and mechanical performances by inkjet-printing the formulated printable ink containing PEDOT:PSS, formamide (FA), d-sorbitol (SOR), sodium dodecyl benzene sulfonate (DBSS), and ethylene glycol (EG). The inkjet-printed uniform PEDOT:PSS film exhibits a high conductivity of 1050 S/cm and sheet resistance of less than 145 Ω/sq on both rigid and flexible substrates. Moreover, the resistance can remain stable after 200 cycles of stretching at 55% strain. The film also presents good stability during repetitive stretching–releasing cycles. The significantly enhanced conductivity of the film lies on the conformational transition of the backbone by secondary doping and post-treatment with FA as well as removing the excess PSS components after phase separation between PEDOT and PSS. Meanwhile, SOR serves as a plasticizer to break the original hydrogen bonds between PSSH chains and provides larger free volume for polymer chain extension, which gives the PEDOT:PSS film the ability to tolerant cyclic tension. This is one of the optimal performances currently reported for inkjet-printed stretchable PEDOT:PSS films. The inkjet-printed PEDOT:PSS film with high conductivity, stretching properties, as well as good biocompatibility exhibits promising prospects as anodes on optoelectronic devices.
研究领域:
材料科学
·
电子学
·
纳米技术
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Applied Materials Today
·
2019
·
IF 8.013
Linghui Zhang,Qisheng Sun,Youkui Xu,Lili Han,Qian Wang,Yangchun Yu,Zhiwen Jin,Shikuan Yang,Zhipeng Ci
Fabrication of ultrathin ( e.g. , ∼2 nm) CsPbBr 3 nanowires is still challenging for existing methods, for the extremely fast crystal growth process of CsPbBr 3 . Here, we developed a self-assembled nanotemplate-confined growth concept to prepare ultrathin CsPbBr 3 nanowires. During electrospinning using the N , N -dimethylformamide (DMF) solution composed of polymethyl methacrylate (PMMA), PbBr 2 , CsBr, and capping agents, PMMA chains would assemble into nanochannels acting as nanotemplates within the electrospun PMMA fibers. Owing to the very limited amount of precursors within the nanochannels, ultrathin CsPbBr 3 nanowires were prepared after DMF evaporation. The CsPbBr 3 nanowires within the PMMA fibers or dispersed in toluene showed bright blue luminescence. The structure of the CsPbBr 3 products could be adjusted by the stirring time, as well as the amount of PMMA, PbBr 2 , and CsBr in DMF. Overall, we developed a new method towards engineering ultrafine CsPbBr 3 nanostructure through self-assembled template-confined growth concept during electrospinning, which may find potential applications in blue light emitting diodes and other optoelectronic devices.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2025
·
IF 6.9
Lihan Wang,Binbin Ding,Denghui Yan,Xiaolong Ren,Yuan Zang,Song Feng,Zebin Li,Jun Wang,Qinglong Fang,Lianbi Li,Caijuan Xia
Van der Waals (vdWs) heterojunctions composed of two dimensions (2D) materials offer great opportunities for developing multifunctional and high-performance electronic and optoelectronic devices due to their unique optical and optoelectronic properties. However, most photodetectors lack sensitivity to light polarization. Notably, monolayer molybdenum disulfide (MoS 2 ) exhibits strong valley polarization and spin polarization characteristics, leading to selective absorption of circularly polarized light. The polarization dependence of the optical response rises from its unique anisotropic in-plane crystal structure. In this study, we report the growth of MoS 2 films on graphene by low-pressure chemical vapor deposition (LPCVD). Comprehensive characterization, including spectroscopic analysis, surface morphology, and surface analysis, confirms the uniformity and crystal quality of the MoS 2 film on graphene. The metal–semiconductor-metal (M−S−M) structure based on MoS 2 /graphene exhibits sensitive circularly polarized selective absorption characteristics under circularly polarized light. This approach offers a promising route for the growth of transition metal dichalcogenides (TMDs), facilitating their application in high-performance electronics and polarized light detection.
研究领域:
光电子学
·
纳米材料
·
二维材料
·
光子学
·
半导体器件
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）