Nanoscale
·
2015
·Vol. 8
·期 4
·2277-2283
·
IF 7.394
Shuo Chen,Xvsheng Qiao,Fengxia Wang,Qun Luo,Xianghua Zhang,Xia Wan,Yang Xu,Xianping Fan
An effective colloidal process involving the hot-injection method is developed to synthesize uniform single-crystalline Sb2Se3 nanorods in high yields. The photoconductive characteristics of the as-synthesized Sb2Se3 nanorods are investigated by developing a film-based photodetector and this device displays a remarkable response to visible light with an “ON/OFF” ratio as high as 50 (with an incident light density of 12.05 mW cm−2), short response/recovery times and long-term durability. To overcome the challenge of the intrinsic low electrical conductivity of Sb2Se3, hybrid nanorods with the Sb2Se3/AgSbSe2 heterojunction structure having a type-II band alignment are firstly prepared. The electric current of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film has been significantly increased both in the dark and under light illumination. The responsivity of the photodetector based on the Sb2Se3/AgSbSe2 hybrid nanorod film is about 4.2 times as much as that of the photodetector based on the Sb2Se3 nanorod film. This improvement can be considered as an important step to promote Sb2Se3 based semiconductors for applications in high performance photodetectors.
研究领域:
材料科学
·
纳米技术
·
光电子学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2019
·Vol. 7
·期 31
·9496-9503
·
IF 6.641
Dong Ding,Henan Li,Huizhen Yao,Lai Liu,Bingbing Tian,Chenliang Su,Ye Wang,Yumeng Shi
With intense interest in lead halide perovskites for flexible optoelectronic applications, shape-controlled preparation of fibrous perovskites with high stress tolerance is desirable. We report a template synthesis method for obtaining fibrous perovskite materials, by using the capillary effect of a precursor solution. Fibrous yarn bundles, which are highly flexible and can be knitted into various patterns, are used as a template to form MAPbI3 with controllable dimensionality and morphology. On the basis of this, we further design and successfully obtain a “quasi-spring” like network based flexible photodetector. The device exhibits impressive photoelectric characteristics, that is, an ON/OFF ratio of ∼4.5 × 104, a fast photo-response speed (trise ∼ 4 ms and tdecay ∼ 10 ms at an illumination density of 80 mW cm−2), and a detectivity of 2.2 × 1011 Jones (at an illumination density of 10 μW cm−2). Furthermore, the device exhibits a minute photocurrent attenuation after 200 bending cycles, and is able to work stably even in a twisted state at 180°. This work provides a method for the controllable growth of perovskite materials, which will yield promising opportunities for constructing integrated crooked and different dimensional perovskites and optoelectronic systems.
研究领域:
材料科学
·
光电化学
·
纳米技术
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2015
·Vol. 3
·期 12
·2933-2939
·
IF 4.696
Li Wang,Hong-Wei Song,Zhen-Xing Liu,Xu Ma,Ran Chen,Yong-Qiang Yu,Chun-Yan Wu,Ji-Gang Hu,Yan Zhang,Qiang Li,Lin-Bao Luo
In this study, we reported on the construction of p–n junctions based on crystalline Ga-doped CdS–polycrystalline ZnTe nanostructures (NSs) for optoelectronic device application. The coaxial nano-heterojunction was fabricated by a two-step growth method. It is found that the absorption edge of CdS:Ga–ZnTe:Sb core–shell NSs red shifted to about 580 nm, compared with CdS nanowires (520 nm). The as-fabricated core–shell p–n junction exhibited obvious rectification characteristics with a low turn-on voltage of ∼0.25 V. What is more, it showed stable and repeatable photoresponse to 638 nm light illumination, with a responsivity and a detectivity of 1.55 × 103 A W−1 and 8.7 × 1013 cm Hz1/2 W−1, respectively, much higher than other photodetectors with similar device configurations. The generality of this study suggests that the present coaxial CdS:Ga–ZnTe:Sb core–shell nano-heterojunction will have great potential applications in future nano-optoelectronic devices.
研究领域:
纳米材料科学
·
光电设备工程
·
半导体物理
✓ 已验证
DOI
高影响因子
JOURNAL OF PHYSICS D-APPLIED PHYSICS
·
2024
·Vol. 58
·期 8
·085110
·
IF 3.1
Hong Li,Qiao Wang,Qibing Li,Kai Zhang,Enen Li,Hongbo Li,Guangyou Fang,Yirong Wu,Ping-An Hu,Tianwu Wang
The terahertz spectra and terahertz emission characteristics of Gallium telluride (GaTe) as a function of temperature were studied by terahertz spectroscopy system, including terahertz time-domain spectroscopy, optical pump-terahertz probe spectroscopy and terahertz emission spectroscopy. The temperature range is 20 K–300 K. The temperature-dependence terahertz transmittance and dielectric properties, photocarrier recombination dynamics and terahertz radiation properties of GaTe are analyzed. As the temperature increases, thermal expansion and lattice vibration intensify, resulting in accelerated phonon scattering and reduced relaxation time. Meanwhile, due to the acceleration of the relaxation process, the carriers are rapidly recombined, which improves the terahertz transmittance of GaTe. Further, enhanced terahertz emission of GaTe was observed at low temperatures. This is because the excitation energy at low temperatures is more easily converted into transient photocurrents than energy dissipation. This work provides technical support for the fabrication of GaTe-based optoelectronic devices.
研究领域:
材料科学
·
光学
·
凝聚态物理
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2023
·Vol. 33
·期 48
·2306668
·
IF 19
Yingqian Cen,Yudi Tu,Jingting Zhu,Yutao Hu,Qiaoyan Hao,Wenjing Zhang
Devices based on 2DMs van der Waals (vdW) heterostructures always compose of multiple contacts. Due to the instability of nanoscale 2DMs and interfaces, these contacts can be affected by the operation-induced photo or thermal effect. They can trigger the evolution of junctions and rearrange the junctions across a device, which are detrimental for applications. Herein, vdW heterostructure of indium selenide (InSe) and black phosphorus (BP) on Au electrodes are investigated to reveal the contact evolution and its relation to device performance. During operation, light irradiation changes the I–V characteristics from symmetry to strong rectification. Photocurrent mapping and Kelvin-probe force microscopy (KPFM) reveal triple junctions in this heterostructure, i.e., Au-InSe junction, InSe homojunction, and InSe-BP heterojunction. The variation of I–V characteristics of vdW heterostructure is ascribed to the evolution of Au-InSe junction from quasi-ohmic junction with a near-zero work function difference ( Δφ ) to a strong Schottky junction ( Δφ = ≈0.27 eV). The stabilized device demonstrates distinguished time-domain response at individual junctions and overall device, indicating the evolution of contacts and the consequent opposite junction directions degrade the overall device performance. This research emphasizes the importance of dealing with heterogeneous contacts and junction directions in designing vdW heterostructure photodetectors.
研究领域:
材料科学
·
纳米技术
·
光电器件
✓ 已验证
产品关联
DOI
高影响因子
2D Materials
·
2017
·Vol. 4
·期 2
·025097
·
IF 6.937
Yan Wang,Wu-Xing Zhou,Le Huang,Congxin Xia,Li-Ming Tang,Hui-Xiong Deng,Yongtao Li,Ke-Qiu Chen,Jingbo Li,Zhongming Wei
P–n junctions based on vertically stacked van der Waals (vdW) materials have attracted extensive attentions and may offer novel physical performances for the design of next-generation electronics. Here, vertically stacked p-WSe2/n-SnS2 heterostructures have been fabricated by a polymethyl methacrylate (PMMA)-assisted transfer method. The unique electronical properties and self-driven photoelectric characteristics of the heterostructures are measured. The transfer current of the heterostructures show gate-tunable 'anti-ambipolar' behavior under dark condition with the maximum of the on/off ratio exceeding 105, while under light illumination it triggers double 'on' state anti-ambipolar behavior. The 'anti-ambipolar' behavior under dark condition and the 'on' state I under light illumination is originating from the in series of p-channel in WSe2 and n-channel in SnS2, while the 'on' state II can be attributed to the gate-controlled Schottky barrier modulation between the heterostructure and the Au electrodes. The heterostructure also shows self-driven photoswitching performance under 532 nm laser, which can be attributed to the type-II band alignment and the build-in potential of p–n heterostructure.
研究领域:
材料科学
·
电子工程
·
光电器件
✓ 已验证
DOI
高影响因子
CHEMICAL PHYSICS LETTERS
·
2024
·
IF 2.8
Yelin Ding,Yiwei Zhao,Zhihui Deng,Kai Lian,Zhengtong Wang,Xiaohui Liu,Chun Sun
Halide perovskites have attracted widespread attention in the fields of photovoltaics, LEDs, lasers, and photocatalysis due to their unique optoelectronic properties. Here, we proposed a method to synthesize CsPbBr 3 /TiO 2 composite material by embedding precursors into mesoporous titanium dioxide pores and inducing in-situ growth of the perovskites within the pores. Due to the encapsulation of mesoporous TiO 2 , CsPbBr 3 maintains its excellent luminescent characteristics in water, air, and at high temperatures. Furthermore, the Z-type heterojunction structure formed between mesoporous TiO 2 and internal CsPbBr 3 significantly enhances the photo-generated current, and the response time has increased by 1.7 times.
研究领域:
材料科学
·
光催化
·
光电探测器
·
光电
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS TRANSACTIONS
·
2020
·Vol. 61
·期 7
·1205-1209
·
IF 0.731
Hongyan Zhao,Lin Wang,Mengxin Yan,Maolin Shen,Yude Wang,Shoubao Zhang,Shaoshuai Zhou,Shuo Han
The graphene oxide/silver nanoparticles (GO/AgNPs) composite films were prepared by spin coating combined with electrostatic self-assembly technology, and the reduced graphene oxide/silver nanoparticles (RGO/AgNPs) composite films were finally obtained at 600°C under Ar/H2 atmosphere for 2 h. With the increase of the number of film layers, the absorption characteristic peak intensity of reduced graphene oxide (RGO) also gradually increases, indicating that the composite film grew uniformly. The conductivity of graphene/silver nanoparticles composite films not only increased with the decreased of particle size, but also increased with the increased of self-assembly and spin-coating times. The lowest sheet resistance of RGO/AgNPs28-10 film was only 0.392 kΩ/sq, which showed excellent conductive performance.
研究领域:
材料科学
·
纳米技术
·
电气工程
·
化学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Science
·
2022
·Vol. 10
·期 1
·2205536
·
IF 17.521
Ya Wu,Jiangshan Feng,Zhou Yang,Yucheng Liu,Shengzhong (Frank) Liu
In the past decade, metal halide perovskite (HP) has become a superstar semiconductor material due to its great application potential in the photovoltaic and photoelectric fields. In fact, HP initially attracted worldwide attention because of its excellent photovoltaic efficiency. However, HP and its derivatives also show great promise in X-ray detection due to their strong X-ray absorption, high bulk resistivity, suitable optical bandgap, and compatibility with integrated circuits. In this review, the basic working principles and modes of both the direct-type and the indirect-type X-ray detectors are first summarized before discussing the applicability of HP for these two types of detection based on the pros and cons of different perovskites. Furthermore, the authors expand their view to different preparation methods developed for HP including single crystals and polycrystalline materials. Upon systematically analyzing their potential for X-ray detection and photoelectronic characteristics on the basis of different structures and dimensions (0D, 2D, and 3D), recent progress of HPs (mainly polycrystalline) applied to flexible X-ray detection are reviewed, and their practicability and feasibility are discussed. Finally, by reviewing the current research on HP-based X-ray detection, the challenges in this field are identified, and the main directions and prospects of future research are suggested.
研究领域:
材料科学
·
半导体物理
·
辐射探测
·
光伏技术
·
光电子学
✓ 已验证
DOI
高影响因子
ANALYTICAL CHEMISTRY
·
2024
·
IF 6.7
Mengfan Mao,Yexin Zu,Yating Zhang,Yongzhen Qiu,Yue Lin,Fang Luo,Zuquan Weng,Cuiying Lin,Bin Qiu,Zhenyu Lin
Halide perovskites have emerged as a highly promising class of photoelectric materials. However, the application of lead-based perovskites has been hindered by their toxicity and relatively weak stability. In this work, a composite material comprising a lead-free perovskite cesium copper iodide (CsCu2I3) nanocrystal and a metal–organic framework (MOF-801) has been synthesized through an in situ growth approach. The resulting composite material, denoted as CsCu2I3/MOF-801, demonstrates outstanding stability and exceptional optoelectronic characteristics. MOF-801 may serve a dual role by acting as a protective barrier between CsCu2I3 nanocrystals and the external environment, as well as promoting the efficient transfer of photogenerated charge carriers, thereby mitigating their recombination. Consequently, CsCu2I3/MOF-801 demonstrates its utility by providing both stability and a notably high initial photocurrent. Leveraging the inherent reactivity between H2S and the composite material, which results in the formation of Cu2S and structural alteration, an exceptionally sensitive photoelectrochemical sensor for H2S detection has been designed. This sensor exhibits a linear detection range spanning from 0.005 to 100 μM with a remarkable detection limit of 1.67 nM, rendering it highly suitable for precise quantification of H2S in rat brains. This eco-friendly sensor significantly broadens the application horizon of perovskite materials and lays a robust foundation for their future commercialization.
研究领域:
材料科学
·
分析化学
·
环境科学
·
生物传感器
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）