Loading 2D layered transition metal dichalcogenides (TMDs) on p-type silicon photocathode is suitable for hydrogen production in solar-driven photoelectrochemical (PEC) water splitting. Similarly, various nanostructured TMDs exposing more active sites are widely explored for improving the PEC performances of composite photoelectrodes. Here, defect engineering using a controllable argon ion beam bombardment is presented on ReS 2 /Si photocathode. The atomic vacancy defects are introduced on the 2D ReS 2 to realize high-density active sites, which significantly enhance the solar-driven hydrogen evolution reaction performance of ReS 2 /Si photocathode. The highest photocurrent density of 18.5 mA cm −2 (at 0 V vs reversible hydrogen electrode) is achieved, under a simulated sun irradiation.
Mai Manfang,Liao Bin,Liao Yijun,Lin Donghai,Ma Xinzhou
GaTe thin films are electrochemically deposited on indium tin oxide for photoelectrochemical applications. The electrochemical deposition behavior of GaTe thin films in acidic solution of HTeO 2 + with Ga 3+ is studied with cyclic voltammetry combining with operando transmittance spectroscopy. Underpotential deposition of Ga on Te starts at potential of − 0.35 V. The presence of Ga 3+ in the solution can strongly suppressed the formation of H 2 Te. XPS analysis reveals that Ga-rich GaTe is deposited over a wide potential range. The photoelectrochemical performance of the thin films as photocathodes is strongly dependent on the deposition potential. The GaTe films deposited at − 1.0 V produced the highest photocurrent of about − 0.03 mA cm −2 . Meanwhile the film deposited at − 0.35 V shows improved performance during photoelectrochemical measurement, which can be ascribed to the increased GaTe content during photoelectrochemical measurements, as confirmed by XPS analysis. Graphical
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