Optical communication has become a research hotspot in modern non-contact communication systems, and high-performance photodetectors, as a key component, are crucial for achieving high-fidelity signal transmission. Photoconductive devices (PCDs) are expected to find applications in the field of optical communication due to their advantages in high gain. However, it is difficult to achieve an effective balance between high responsiveness and fast response times in PCDs, leading to significant challenges in their commercial applications in the field of optical communication. In this paper, by employing both the mask method and channel width tuning method, a high-performance PCD is developed based on the Ag-MAPbI 3 -Ag structure, demonstrating a high responsivity of 45.5 A W −1 , a high detectivity of 7 × 10 12 Jones, and a fast response time of 0.35 ms. Finally, this device is integrated into an optical communication system using embedded technology, effectively achieves byte transmission, and demonstrates the practical application of single-crystal MAPbI 3 PCD as a signal receiver in the system. This research provides a noteworthy approach to facilitating the seamless integration and commercialization of optical communication systems utilizing perovskite single-crystal devices, while also paving the way for optical interconnects based on perovskite.
Photodetectors are essential parts of wireless optical communication system for obtaining high fidelity signal transmission, which mainly relies on expensive and energy-consuming Si, GaN, and InGaAs based photodiodes. The emerging organic–inorganic metal halide perovskite materials, with the merits of low-cost, strong optical absorption, superior charge transport, and so on, are widely investigated in photodetection applications. Herein, a Cu ion induced p-type doping strategy for perovskite film is proposed to facilitate hole transport, passivate trap states, avoid charge accumulation, and suppress recombination of photogenerated carriers, contributing to an enhanced photoelectric performance for self-powered hole-conductor-free devices. The optimal device shows a highest responsivity of 0.37 A W −1 , detectivity of 1.06 × 10 12 Jones, linear dynamic range of over 101 dB, and an ultimate photoresponse rate approaching 5 µs. Moreover, an optical communication system integrated with the perovskite photodetector as light signal receiver for transmitting digital signals is demonstrated, in which characters can be transmitted accurately, and audio signal is recovered with high fidelity. The results suggest that with proper chemical modification, perovskite materials are promising alternative to inorganic semiconductors for efficient photodetection in advanced integrated optical communication system.
Two-dimensional transition metal dichalcogenides have attracted great interest in recent years due to their excellent photoelectric properties. The lateral photovoltaic (LPV) properties of SnSeS/p-Si heterojunctions are investigated in this paper. The quality of the SnSeS film prepared using pulsed laser deposition is demonstrated through the use of X-ray diffraction, Raman, and X-ray photoelectron spectra. Both large position sensitivity (236 mV mm−1) and an ultrafast relaxation time of 0.48 μs of LPV under 532 nm laser irradiation are observed in a SnSeS/p-Si heterojunction at room temperature. The position sensitivity of the LPV in the SnSeS/p-Si heterojunction shows a weak dependence on the laser wavelength from 405 to 808 nm. The SnSeS/p-Si heterojunction is utilized to establish an optical communication system with a photoelectrical bandwidth of up to 20 kHz. Our findings highlight the significant potential of the SnSeS/p-Si heterojunction photodetector as a promising candidate for next-generation optoelectronic materials in optical communication and self-powered position-sensitive detectors.
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