IONICS
·
2018
·Vol. 25
·期 2
·727-735
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IF 2.347
Feng Aihu,Yu Yang,Mi Le,Yu Yun,Song Lixin
In this work, the MXene Ti 3 C 2 with excellent electrical conductivity is obtained by etching Ti 3 AlC 2 with NH 4 HF 2 solution. The electrosorption performance, the electrochemical and physicochemical properties of as-prepared Ti 3 C 2 are characterized. The results demonstrate that NH 4 HF 2 -etched Ti 3 C 2 possesses the better intercalation pseudo-capacity and the specific capacitance is up to 78 F∙g −1 , which is an increase of 34% than HF-etched Ti 3 C 2 . In addition, the desalination capacity of NH 4 HF 2 -etched Ti 3 C 2 enhances 35.5% than that of HF-etched Ti 3 C 2 . When the initial conductivity of NaCl is ~ 1000 μS/cm, the desalination capacity of NH 4 HF 2 -etched Ti 2 C 3 electrode is 12.1 mg∙g −1 , and the pseudo-first-order model can well describe the electrosorption kinetics of NH 4 HF 2 -etched Ti 3 C 2 electrode. Furthermore, the regeneration performance of the NH 4 HF 2 -etched Ti 3 C 2 electrode is excellent. This study indicates a new kind of effective electrode material to improve the desalination performance of capacitive deionization (CDI) technology.
研究领域:
材料科学
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环境工程
✓ 已验证
产品关联
DOI
高影响因子
DIAMOND AND RELATED MATERIALS
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2025
·
IF 5.1
Yunchao Du,Zhixin Zhao,Haoran Li,Biao Yan,Duo Liu
Diamond has attracted considerable attention in microelectromechanical systems (MEMS) due to its outstanding mechanical, thermal, and optical properties. We report here a novel strategy for facile fabrication of diamond drum resonators on silicon (Si) wafer for high precision temperature sensing. To accomplish this, nanodiamonds (NDs) colloids were first treated with cerium ammonium nitrate, a potent single-electron oxidant, to achieve a positive Zeta potential (+37 mV). The NDs seeds were then electrostatically adsorbed onto Si (100) wafer, followed by microwave plasma chemical vapor deposition (MPCVD) at 1103 K for 2 h. A continuous, pinhole-free diamond film with uniformly distributed residual stress (∼451 MPa) and low surface roughness (∼70 nm) was obtained. Diamond drum resonator was fabricated by a combination of laser engraving and wet chemical etching. Circular pattern of various diameters was first engraved onto the backside of the Si wafer using a 355 nm nanosecond pulse laser. Subsequent Si wet etching with 25 wt% KOH yielded square diamond drums of various sizes. We find that the etching process reduced the residual stress by 208 MPa, and enhance the SiV photoluminescence emission by 47 %. The drum resonators exhibit relatively high quality factors up to ∼2496 and high Young's modulus of ∼812 GPa, with a power sensitivity of 427 Hz/mW and a temperature sensitivity of 907 Hz/K (1396 ppm/K). This approach offers a rapid, cost-effective method for batch fabrication of diamond drum resonators on Si wafers.
研究领域:
微机电系统
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材料科学
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传感器技术
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产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2018
·
IF 3.057
Chao Peng,Ping Wei,Xin Chen,Yongli Zhang,Feng Zhu,Yonghai Cao,Hongjuan Wang,Hao Yu,Feng Peng
2D MXenes have attracted extensive attentions owing to their anisotropy, high conductivity and other extraordinary properties. The popular preparation method of MXenes usually involves HF in high concentrations, which has seriously restricted their pervasive applications. In this work, a new hydrothermal route with low-toxicity etching agents (NaBF 4 , HCl) was used to synthesize Ti 3 C 2 MXene ( h- Ti 3 C 2 ). Compared with the Ti 3 C 2 prepared by the traditional HF etching method ( t- Ti 3 C 2 ), the h- Ti 3 C 2 has the higher c lattice parameter , larger interlayer distance and larger BET specific surface area, because of the slow release mechanism during the hydrothermal process. The hydrothermal etching method not only avoided the use of high-concentration HF, but also was more efficient to prepare Ti 3 C 2 flakes. Moreover, the hydrothermal etching route can be extended to other MXene materials, e.g. Nb 2 C. We demonstrated that the h -MXenes have better adsorption performance of methylene blue and methyl orange dyes. The hydrothermal etching route proposed in this study enabled the environmental benign and high efficiency exfoliation of MXenes, displaying the promise to facilely prepare 2D MXenes and paving a way to their widespread applications.
研究领域:
材料科学
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纳米材料
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环境功能材料
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表面化学
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胶体与界面科学
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2019
·
IF 5.155
Jian Shen,Yuandong Chen,Feihu Zhang,Dan Zhang,Yang Gan
Wet etching of Si substrate enables fabrication of sophisticated Si microstructures for a number of applications. However, the detailed anisotropic etching behavior of Si in the alkaline TMAH solutions is still not well understood. In this study, insights into the wet etching behavior of (100) patterned silicon substrate (PSiS) with circular aperture SiO 2 mask in TMAH solutions of varying concentrations (1–25 wt%) are obtained through systematically studying the morphological and crystallographic evolutions of PSiS. Etching in 1 wt% TMAH revealed the widest spectrum of morphological evolutions including the rounded apertures, inverted octahedral frustums, octahedral pyramids, and pyramids. In contrast, etching in 5–25 wt% TMAH revealed features of inverted octahedral frustums, pyramidal frustums, and pyramids. A series of crystallographic planes formed due to anisotropic crystallographic etching were indexed as—C 1 { 3 ¯ 40}, C 2 { 1 ¯ 10}, C 3 { 1 ¯ 1 1 ¯ }, C 4 { 2 ¯ 1 1 ¯ }, and C 5 {1 14 0}, and the etching rates of which were determined to explain the morphological evolution and anisotropic etching mechanism. This work contributes to the controllable fabrication of sophisticated Si microstructures for Si-based optoelectronic devices with potentially enhanced performance.
研究领域:
材料科学
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微纳加工
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半导体工艺
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表面工程
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晶体学
✓ 已验证
DOI
高影响因子
RSC Advances
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2015
·Vol. 5
·期 117
·96483-96487
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IF 3.84
Ruike Li,Meicheng Li,Yingfeng Li,Pengfei Fu,Younan Luo,Rui Huang,Dandan Song,Joseph Michel Mbengue
Metal-assisted chemical etching is a very popular method of fabricating silicon nanostructures. For the dissolution and recrystallization of Ag and the inertia of Au, we present a co-catalytic mechanism of silicon etching using non-overlapping Au and Ag nanofilms. Meanwhile, two kinds of novel nanostructures are obtained by changing the relative positions of the two nanofilms. The results show that regardless of whether the Ag or Au nanofilm is the upper layer, the Ag nanofilm will first react to etch the silicon substrate into silicon nanowires (Si NWs). Afterwards, the Au nanofilm will re-etch the Si NWs into thick pillars (Ag upper) or ultrathin porous Si NWs (Au upper). It should be noted that the vertical etching rates of the two layers are not observably different, in contrast to when the Au and Ag nanofilms are used separately, in which the vertical etching rate of the Ag nanofilm is much higher than that of the Au nanofilm. This occurs because the subsequent re-etching process by the Au nanofilm is conducted at multiple surfaces because Au can generate excessive holes during the decomposition of hydrogen peroxide. Furthermore, this study presents a feasible method for the fabrication of individual, thick (∼200 nm) silicon pillars and ultrathin (∼25 nm) porous Si NWs. These insights are significant for the syntheses of many nanostructures.
研究领域:
材料科学
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纳米技术
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2016
·Vol. 27
·期 7
·7265-7273
·
IF 1.798
Zhang Dongjiu,Cheng Haifeng,Zhang Zhaoyang,Kang Yue
This paper introduced a general method of etching suspended graphene by nonmetallic SiO x nanoparticles (SiO x NPs) in graphene synthesis. Effects of etching time, concentration of silica gel and type of graphene on the etching mode of graphene have been systematically considered with using as-grown graphene film on a silica gel coating copper as model system. Nonmetallic SiO x NPs acted as etchant plays important role in the in situ etching process during the fabrication of graphene. The etched multilayer graphene pattern can be modulated from large area films to a rectangle pattern by varying the Si concentration and etching time, while single layer graphene pattern alters little. The morphology and critical structure of SiO x etched graphene were characterized by Raman spectra, transmission electron microscopy, scanning electron microscope and X-ray photoelectron spectrum. The process and mechanism described here open the way for tailoring graphene via nanoparticles instead of metal, which show significant influence of the electrical properties of graphene.
研究领域:
纳米材料学
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表面科学
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凝聚态物理
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材料化学
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电子显微学
✓ 已验证
DOI
高影响因子
Nanoscale
·
2025
·
IF 5.1
Yu Wang,Xudong Wang,Mian Li,Zhifang Chai,Qing Huang
The study investigates the structural evolution of Ti3SiC2 using the gaseous etchant CCl4, emphasizing its ability to selectively etch Si and Ti atoms to form an MXene (Ti3C2Cl2)/carbon composite and carbide-derived carbon (CDC). Under specific conditions, a complete conversion to the MXene is accomplished at a Ti3SiC2 : CCl4 molar ratio of 1 : 3.5, whereas higher CCl4 concentrations lead to further oxidation of Ti3C2Cl2 and formation of lamella CDC. This method presents an alternative chemical etching route to synthesize MXenes. Importantly, the production of CDC using CCl4 as an etchant could obtain carbon/MXene hybrids with significant implications for promising energy storage applications.
研究领域:
材料科学
·
能源存储
✓ 已验证
产品关联
DOI
PubMed
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2024
·
IF 4.9
Xueqin Liao,Longjin Du,Jiangfeng Pei,Yiwen Hu,Jianzhong Liu
The combustion efficiency of Al is usually not high due to the influence of alumina film and agglomeration. Therefore, finding ways to enhance the ignition and combustion performance of Al is important. Herein, a simple one-step recrystallization method was used to prepare the Al@ citric acid (CA) sample. The results showed that the one-step recrystallization method could well coat CA on the outer surface of Al particles and could etch Al particles uniformly. After modification by CA, Al was more prone to thermal oxidation. Compared with pure Al, the addition of CA resulted in shorter ignition delay time, longer combustion time, increased combustion intensity, and weakened agglomeration degree. Condensed combustion products (CCPs) showed that Al sintered significantly during combustion, forming a large agglomerate. The CCPs of Al@CA were more dispersed and had many hollow shell particles. Furthermore, the addition of CA led to a decrease in the active Al content and an increase in the α-Al 2 O 3 content in CCPs. The above phenomena indicated that CA could significantly improve the combustion efficiency of Al. At last, the possible mechanism of CA promoting the ignition and combustion of Al was proposed. Overall, the enhancement of Al combustion performance by CA is attributed to the etching and coating effects of CA. Hoping that this paper will provide a possible pathway for exploring ways to improve Al combustion efficiency.
研究领域:
材料科学
·
燃烧学
✓ 已验证
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2025
·
IF 9.7
Zeping Rao,Yan Yan,Wei Cai,Rong Wang,Zhenhua Wang,Fei Long,Yilong Ma,Chunlin Fu
Constructing ferroelectric hetrojuction and utilizing its piezo-photocatalytic performances is a promising approach for environmental remediation and sustainable energy conversion. However, challenges such as electron-hole recombination and interfacial instability limit the performance of piezoelectric heterojunction photocatalysts. In this study, a novel sandwich-structured heterojunction with a lattice-matched interface constructed by Sr 2 Bi 4 Ti 5 O 18 (SBTO) bismuth Aurivillius phase ferroelectric material and BiOCl (BOC) was developed via a selective etching strategy. This approach minimizes interfacial defects and stress, while ferroelectric polarization modulates charge distribution, enhancing redox activity. Finite element simulations and experimental results demonstrate that the SBTO/BOC heterojunction leverages intrinsic and interfacial electric fields to form dual electron transport pathways, significantly improving charge separation in both bulk and interface regions. The optimized SBTO/BOC heterojunction achieves a piezo-photocatalytic degradation rate of 0.285 min −1 for Rhodamine B, approximately twice that of Sr 2 Bi 4 Ti 5 O 18 under piezo-photocatalysis (0.147 min −1 ) and 13 times higher than photocatalysis alone (0.022 min −1 ). The heterostructure also efficiently degrades dyes, antibiotics, and Cr(VI), offering a robust design for high-performance piezo-photocatalytic systems.
研究领域:
材料科学
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环境科学
·
能源科学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CERAMICS INTERNATIONAL
·
2020
·
IF 3.83
Yitong Guo,Sen Jin,Libo Wang,Pingge He,Qianku Hu,Li-Zhen Fan,Aiguo Zhou
In this study, highly pure Mo 2 CT x MXene was successfully synthesized from Mo 2 Ga 2 C by etching in hydrothermal conditions for 24 h at 140–180°C. The etching solutions were lithium fluoride (LiF), sodium fluoride (NaF), potassium fluoride (KF) or ammonium fluoride (NH 4 F) mixed with hydrochloric acid (HCl). The temperature to obtain pure Mo 2 CT x MXene in NH 4 F + HCl solution was 140°C, lower than that in other etching solutions. The thickness of as-prepared monolayer Mo 2 CT x nanosheet was measured to be 1.5 ± 0.3 nm by atomic force microscope. From thermogravimetry and differential thermal analysis, Mo 2 CT x MXene was found to be stable in argon atmosphere at a temperature of up to 500°C. As the temperature increased, Mo 2 CT x MXene gradually transformed, and β-Mo 2 C/MoC/Mo 3 C 2 was eventually formed to coexist with Mo 2 CT x MXene at 700°C. In air atmosphere, Mo 2 CT x MXene was stable at 200°C. At 590°C, Mo 2 CT x MXene was completely oxidized to MoO 3 .
研究领域:
材料科学
·
化学
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Nano Materials
·
2023
·
IF 5.9
Jingxuan Cui,Jiao Wu,Le Mi,Aihu Feng,Yang Yu,Yun Yu
Ti3C2Tx MXene is expected to achieve infrared stealth by regulating its thermal radiation properties. In this study, Ti3C2Tx MXene films were prepared by using the acid etching method, and the effects of etchants (HCl/LiF, HF, and NH4HF2) on the film structure as well as the infrared radiation properties were systematically studied. The intercalation process used to exfoliate single/few-layer nanosheets was found to accelerate the oxidation and increase the resistance of MXene. The mechanism behind these effects on emissivity was explained in detail. Based on these findings, the most suitable preparation process for low-emissivity MXene was selected. The resulting Ti3C2Tx film (HL-f), which used HCl/LiF as an etchant for Ti3AlC2, has a high conductivity of 3119 S/cm that reflects numerous infrared waves reaching its surface while exhibiting a low emissivity of only 0.13. The colloidal solution (HL-s) made with HCl/LiF as an etchant was sprayed directly onto a PI substrate as a coating with infrared stealth capabilities, thermal stability, and Joule heating properties, reducing the emissivity from 0.87 to 0.14. This work provides guidance for improving MXene preparation methods and their applications in related fields while demonstrating the great potential of HCl/LiF-etched Ti3C2Tx MXene as a low-emissivity infrared stealth material.
研究领域:
材料科学
·
红外技术
·
纳米材料
✓ 已验证
产品关联
DOI
高影响因子
CHEMISTRY-A EUROPEAN JOURNAL
·
2020
·Vol. 26
·期 35
·7918-7922
·
IF 4.857
Yichen Zhou,Mingmin Jia,Xiongfei Zhang,Jianfeng Yao
Graphical Filling the voids : Etched ZIF-8 (ZIF-8-E) crystals permeated by open through pores of size about 100 nm have been introduced into a polyethersulfone membrane matrix. The resulting material shows enhanced CO 2 /N 2 separation performance (see scheme). Zeolite ZIF-8 has been etched with acid to form microporous ZIF-8-E crystals. These were then introduced into a polyethersulfone (PES) membrane matrix to enhance its CO 2 /N 2 separation performance. Open through pores of size about 100 nm formed in the ZIF-8 crystals allow the ingrowth of polyethersulfone chains, ensuring a reduction in the number of nonselective voids, thereby achieving better interaction between ZIF-8-E and PES. As a result, the CO 2 /N 2 separation performance of the ZIF-8-E/PES membrane increased significantly, showing a CO 2 permeability of 15.7 Barrer and a CO 2 /N 2 ideal selectivity of 6.5.
研究领域:
材料科学
·
环境工程
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）