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The high content of Ba and Sc in Ba
We report on a low work-function (WF), high-conductivity poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) electrode by a two-step dipping process. The first dipping into the sulfuric acid is to enhance its conductivity and the second dipping into PEI solution is to lower its work function. After the first dipping, the conductivity of PEDOT:PSS film reaches 1561 S/cm under dipping time of 1 min and the temperature of 60 °C. After dipping into sulfuric acid, the thickness of PEDOT:PSS is reduced to about half but the transmittance was lowered. After the dipping into the PEI solution, the WF of PEDOT:PSS is reduced from 4.9 to 4.0 eV. Although the conductivity were lowered slightly after treated with PEI solution, an electrode with a high conductivity of 1140 S/cm was achieved. The low WF and high-conductivity PEDOT:PSS film is used to fabricate ITO-free, metal-electrode-free and vacuum-free organic solar cells with a simple structure of glass/low-WF PEDOT:PSS/P3HT:ICBA/high WF-PEDOT:PSS, the cells display a fill factor of 61% and a power conversion efficiency of 4.0% under 100 mW/cm 2 white light illumination.
It is well known that the balanced charge injection helps prepare high-performance red light-emitting diodes (LEDs) in the electroactive material CsPbBr x I 3- x quantum dots (QDs). Employing a hydrothermal method, we synthesized MoO 2 nanocrystals and doped them into Poly(3,4-ethylenedioxythiophene) /poly(styrenesulfonate) (PEDOT:PSS). The results show that the synthesized MoO 2 nanocrystals can modulate the work function of PEDOT:PSS and enhance the conductivity of the PEDOT:PSS films, which is attributed to disrupting the hydrogen bond between PEDOT and PSS, and inducing the transition of PEDOT from benzoid to quinoid structure. In the PEDOT:PSS- x MoO 2 film, the work function increases from 4.9 eV to 5.09 eV when the content of x is 15%, which reduces the energy barrier between the PEDOT:PSS- x MoO 2 and the hole transport layer: poly[N,N'-bis(4-butylphenyl)-N,N'-bis(phenyl)-benzi (poly-TPD), thus promoting the hole transport and improving the V on of the devices. Additionally, the device's external quantum efficiency (EQE) reaches a maximum value of 7.53% at x = 15% enabling an improvement of 2.6 times over the base device (EQE=2.10%). This work proves that PEDOT:PSS- x MoO 2 as a hole transport layer is an effective material for preparing high-performance QD-LEDs.
Solution-processable poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) is a widely used hole transporting layer (HTL) in organic solar cells (OSCs). However, it is a challenge to adopt it as the HTL on hydrophobic active layers to fabricate inverted OSCs. Surfactants are generally added to improve the wettability of aqueous PEDOT:PSS. In this work, we report that surfactants could induce a change in the work function (WF) of PEDOT:PSS and significantly influence the device performance. Fluorine-containing surfactants could deliver higher device performance than fluorine-free surfactants because the fluorine-free surfactants decrease the WF of PEDOT:PSS, which results in poor electrical contact between the WF of PEDOT:PSS and the highest occupied molecular orbital (HOMO) level of the polymer donor of the active layer. With the fluorine-containing surfactants, we deposited aqueous PEDOT:PSS on the hydrophobic active layer with good film quality and high WF and further fabricated inverted OSCs with comparable performance to the reference device with evaporated MoO3 as the HTL.
Compared with the most studied monolayer MoS 2 , bilayer MoS 2 possesses many distinct fascinating physical properties and potential applications owing to interlayer interactions and structural symmetry. Here, bilayer MoS 2 domains with strict identical AB Bernal stacked order were controllably synthesized using chemical vapor deposition method. In addition, the electrostatic properties of bilayer MoS 2 were systematically investigated by multiple means of photoemission electron microscopy, electrostatic force microscopy, and kelvin probe force microscopy. We found that the work function of monolayer MoS 2 is homogeneous across single crystals and polycrystalline films except for grain boundaries. However, the work function of the Bernal stacked bilayer MoS 2 decreases by 50 ± 4 meV compared with that of monolayer MoS 2 due to the interlayer coupling and screening effects. The deeper understanding gained here on the electrostatic properties of the AB Bernal stacked bilayer MoS 2 should help in the creation of next-generation electronic and optoelectronic devices.
High-performance p-type atomically thin transistors are fundamental components in CMOS-based digital logic circuits for beyond-silicon electronics. Compared with the recent breakthrough in high-quality semimetal contacts approaching the quantum limit on n-type atomically thin channel transistors, achieving high-performance p-type analogues with high-quality contacts remains challenging, which was mainly hindered by the lack of proper high-work-function metallic electrodes with Fermi level unpinning capacity. Herein, we demonstrate that semimetal TiS2 electrodes prepared with a damage-free transfer process can be a feasible option for p-type atomically thin MoTe2 transistors. Owing to its intrinsic large work function (∼5.3 eV) and high-quality contacts with negligible Schottky barrier at the TiS2/MoTe2 interface, the scaled p-type bilayer MoTe2 transistor with 500 nm channel length and the monolayer transistor with 800 nm channel length exhibit a high on-state current (Ion) of 100 μA/μm with the on/off ratio (Ion/off) over 106 and an Ion of 68 μA/μm with the Ion/off ratio over 107, respectively. Such a demonstration will enable monolithic atomically thin MoTe2-based beyond-silicon electronics via the common CMOS technology.
The hole-injection layer (HIL) plays an important role in the electroluminescent property of organic light-emitting diodes (OLEDs). In this paper, Li-doped VO x was prepared by solution processing under low-temperature annealing conditions and used as a new kind of HIL in OLEDs. It demonstrated the best phosphorescent OLED performance when the molar ratio of Li:VO x was 3%. The turn-on voltage was 3.7 V, the maximum current efficiency (CE) was 69.5 cd A −1 and the maximum power efficiency (PE) was 48.4 lm∙W −1 . In contrast to the OLEDs with pristine VO x as HIL, the CE and PE of the OLEDs with Li:VO x were increased by 14.7% and 40.7% respectively. Based on the Fowler-Nordheim tunneling mechanism, doping Li + in VO x improved the efficiency of hole injection and balanced carriers by adjusting the work function , thereby improving the efficiency of the device. The experimental results indicated that Li-doped VO x film prepared by solution processing is a very potential material as the HIL of high-performance OLED.
Tailor-made electrode work functions are indispensable to control energy-level offsets at the interfaces of (opto-)electronic devices. We show by means of photoelectron spectroscopy that several nanometer thick layers of the organic semiconductor 1,4,5,8,9,12-hexaazatriphenylene-2,3,6,7,10,11-hexacarbonitrile (HAT-CN) on virtually all substrates provide hole-injecting electrodes with work functions of around 5.60 eV. This substrate-independent energy-level alignment is due to a relatively large density of gap states in HAT-CN thin films, which is clearly visible in the photoemission data. Furthermore, this additional density of occupied states makes the wide-gap semiconductor thin films sufficiently conductive for electrode applications. Moreover, our study highlights a quite intriguing energy-level alignment scenario as the Fermi-level in HAT-CN thin films is located far from the midgap position, this is rather uncommon for undoped organic semiconductor thin films.
Interfacial electron transfer (IET) at the metal–solution interface is known as a rate-determining step for many electrocatalytic reactions. Hitherto, there is still lack of physical insight into the IET process, as well as an experimental physical quantity directly linked to the IET rate. In this work, we propose that the work function can serve as an indicator for the IET rate of same metals such as silver quantum mechanical analysis demonstrates that a decrease in the work function can dramatically enhance the IET process. To experimentally verify this hypothesis, three different silver catalysts are prepared for CO2 electroreduction. The experimental results confirm that reducing work function of silver catalysts can improve the IET, according to the change of the Tafel slope. Resultantly, the silver catalyst with smaller work function achieves higher activity and selectivity for CO production. This study demonstrates a promising strategy to enhance the performance of same metal catalysts through tuning its work function.
A simple and effective method is proposed for producing polycrystalline La 1- x Ce x B 6 (LaB 6 , La 0.75 Ce 0.25 B 6 , La 0.5 Ce 0.5 B 6 , La 0.25 Ce 0.75 B 6 , and CeB 6 )-Al 2 O 3 ceramics. La 1- x Ce x B 6 solid-solution powders were first prepared by the reaction between lanthanum oxides, cerium oxides, boron carbide, and aluminum powders at 1573 K, during which a trace amount of Al 2 O 3 (1–3 wt.%) was inevitably introduced. Subsequently, highly dense (> 98.5%) La 1- x Ce x B 6 -Al 2 O 3 ceramics were produced using spark plasma sintering (SPS) technology at 1850°C, and the results revealed that the existence of Al 2 O 3 can enhance the mechanical properties of La 1- x Ce x B 6 by pinning the grain boundaries and refining the grains. Among the samples, the La 0.5 Ce 0.5 B 6 -Al 2 O 3 composition exhibited the most excellent mechanical properties, which were 22.8 GPa, 4.14 MPa m 1/2 , and 271 MPa for the Vickers hardness, fracture toughness, and flexural strength, respectively. Moreover, compared to the polycrystalline LaB 6 and CeB 6 bulks, the work functions of La 1- x Ce x B 6 bulks were lower, and the presence of Al 2 O 3 had a slight influence on the work function of La 1- x Ce x B 6 .
A low cost H3PW12O40 (PW12)/CoS2 complex is prepared and used as a counter electrode (CE) to combine with sandwich quantum dot sensitized solar cells (QDSSCs) composed of a TiO2/CdS/CdSe/ZnS photoanode and polysulfide electrolyte to study their photovoltaic properties via a simple hydrothermal method. Under standard simulated sunlight, the photoelectric conversion efficiency (PCE) of 2%PW12 (PW12-2/CoS2) doped CEs was 6.29%, which was significantly 67.7% higher than those of QDSSCs based on undoped CoS2 CEs (3.75%). Due to the introduction of PW12, the nanoparticles forming the hollow structure of CoS2 changed from regular octahedra to rough nanoparticles, which increase the active sites. At the same time, the work function of CoS2 decorated with PW12 is decreased. This study and discovery demonstrate that POMs can be used to optimize CE materials and improve the photoelectric conversion efficiency of QDSSCs, which provide an experimental and theoretical basis for subsequent investigations.
p-Type inorganic nickel oxide (NiOx) exhibits high transparency, tunable-optoelectronic properties, and a work function (WF) that is potentially suitable for hole extraction in inverted perovskite solar cells (PSCs). However, NiOx films possess surface defects that lead to high interfacial recombination and an energy offset with the ionization potential of the perovskite. Herein, we show that fluorinated 3-(2,3,4,5,6-pentafluorophenyl)propan-1-aminium iodide (FPAI) can be used to modify the electronic properties of the NiOx anode interlayer. The FPAI modification led to good perovskite crystal growth and films with reduced surface defects. The FPAI modification also increased the WF of NiOx and improved charge extraction. These improvements led to an increased Voc value compared with control devices without FPAI modification, 1.05 V versus 1.00 V, and a higher short-circuit current and larger fill factor. As a result, the best PSCs with FPAI-modified NiOx had a power conversion efficiency of 19.3%. Finally, the PSCs with the FPAI-modified NiOx layer were found to have improved stability.
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