Nano Energy
·
2020
·
IF 16.602
Boyi Wang,Shuqi Zheng,Qing Wang,Zhiliang Li,Juan Li,Zipei Zhang,Yue Wu,Bensheng Zhu,Siyu Wang,Yuxuan Chen,Liqiang Chen,Zhi-Gang Chen
In this study, we develop a synergistic modulation of the thermal conductivity and power factor of Cu 3 SbSe 4 -based materials through Sn and Zr or Hf co-doping by using a facile microwave-assisted solvothermal method. A series of Cu 3 Sb 1-x M x Se 4 (M = Zr or Hf, x = 0, 0.02, 0.04, 0.06 and 0.08) compounds are firstly synthesized through the microwave-assisted solvothermal method combined with spark plasma sintering (SPS) process. The effect of Zr and Hf doping on the thermoelectric properties of Cu 3 Sb 1-x M x Se 4 (M = Zr or Hf) has been investigated. With increasing the content of Hf and Zr, the thermal conductivity of Cu 3 Sb 1-x M x Se 4 (M = Zr or Hf) is obviously decreased to 0.518 Wm −1 K −1 of Cu 3 Sb 0.92 Hf 0.08 Se 4 and 0.433 Wm −1 K −1 of Cu 3 Sb 0.92 Zr 0.08 Se 4 at 623 K, respectively. In addition, Sn doping further improves the low electrical conductivity and boosts the power factor, yielding a peak zT value of ~0.82 of Cu 3 Sb 0.91 Sn 0.03 Hf 0.06 Se 4 at 623 K, which is ~228% higher than that of the pristine Cu 3 SbSe 4 . Our work provides a new methodology for the decoupling of thermal and electrical properties of the Cu 3 SbSe 4 -based thermoelectric materials .
研究领域:
材料科学
·
热电材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2025
·
IF 6.3
Hui Zhang,Liping Hao,Jiyang Xie,Jianyun Cao,Wanbiao Hu
Thermoelectric materials based on SrTiO 3 are low in cost and environmentally friendly, but their performance must be further improved for practical application. In this study, we show that isovalent substitution of the B-site Ti 4+ in a La doped SrTiO 3 (LSTO) matrix is both effective in reducing thermal conductivity and improving power factor ( PF ). In brief, Zr 4+ substituted LSTO (La 0.08 Sr 0.9 Ti 1- x Zr x O 3 ; x = 0, 0.02, 0.04, and 0.06; labeled as LSTO-Zr 0.02 , LSTO-Zr 0.04 and LSTO-Zr 0.06 , respectively) are prepared by solid-state-reaction and densified in a reducing environment. The optimized LSTO-Zr 0.02 shows a 30 % increase in PF and 12 % reduction in thermal conductivity compared with that of LSTO. Particularly, the LSTO-Zr 0.06 sample with highest substitution level has the largest reduction in thermal conductivity compared to the LSTO matrix (30 %, from 8.2 to 5.6 W m −1 K −1 at 300 K). The reduction in thermal conductivity is because the Zr 4+ substitution introduces chemical impurities and lattice defects, benefiting the scattering of phonon thermal carriers. The improvement in PF after Zr substitution is attributed to the enhanced Seebeck coefficient because of the slightly reduced carrier concentration. In contrast to the B-site Ti 4+ cations, which are partially reduced to Ti 3+ under the reducing environment and contribute to electron carriers, the Zr 4+ are not reduced, resulting in lower electron carrier concentrations after Zr 4+ substitution. This isovalent substitution strategy provides a potential route for the development of high-performance thermoelectric materials based on SrTiO 3 .
研究领域:
材料科学
·
能源工程
✓ 已验证
产品关联
DOI
高影响因子
Materials Today Physics
·
2018
·
IF 0
Y. Zhou,H. Wu,D. Wang,L. Fu,Y. Zhang,J. He,S.J. Pennycook,L.-D. Zhao
The ternary diamond-like compound Cu 2 SnSe 3 is a potential thermoelectric material . Its Cu-Se conducting network leaves Sn as a likely doping site to optimize the carrier concentration without much deterioration to the carrier mobility . Thus, the precise determination on the intricate phase structures of Cu 2 SnSe 3 is critical. Here, we first use the atomically resolved scanning transmission electron microscopy and reveal an unusual phase coexistence (monoclinic and orthorhombic phases) in Ag-doped Cu 2 SnSe 3 . Owing to coexisting phases and the order–disorder transition in the orthorhombic phase, the Ag-doped Cu 2 SnSe 3 shows an unusual three-stage behavior in its temperature-dependent electrical transport properties and achieves record high power factors in this system. The observed three-stage behavior due to the phase coexistence is supported by the first principle calculations, Hall measurements, and optical diffuse reflectance measurements . To fully understand the band structures and the coherent interface between these coexisting phases, a band contact model is proposed that could well explain the three-stage electrical transport behavior. Moreover, the phase coexistence is observed at the nanoscale regime, thus providing a high density of phase boundaries. Such coexisting nanophases play an important role in lowering the lattice thermal conductivity . As a result, the ZT value obtained in Cu 2 Sn 0.93 Ag 0.07 Se 3 is double that of undoped Cu 2 SnSe 3 .
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
产品关联
DOI
ACS Nano
·
2023
·
IF 17.1
Yu Liu,Mingquan Li,Shanhong Wan,Khak Ho Lim,Yu Zhang,Mengyao Li,Junshan Li,Maria Ibáñez,Min Hong,Andreu Cabot
AgSbSe2 is a promising thermoelectric (TE) p-type material for applications in the middle-temperature range. AgSbSe2 is characterized by relatively low thermal conductivities and high Seebeck coefficients, but its main limitation is moderate electrical conductivity. Herein, we detail an efficient and scalable hot-injection synthesis route to produce AgSbSe2 nanocrystals (NCs). To increase the carrier concentration and improve the electrical conductivity, these NCs are doped with Sn2+ on Sb3+ sites. Upon processing, the Sn2+ chemical state is conserved using a reducing NaBH4 solution to displace the organic ligand and anneal the material under a forming gas flow. The TE properties of the dense materials obtained from the consolidation of the NCs using a hot pressing are then characterized. The presence of Sn2+ ions replacing Sb3+ significantly increases the charge carrier concentration and, consequently, the electrical conductivity. Opportunely, the measured Seebeck coefficient varied within a small range upon Sn doping. The excellent performance obtained when Sn2+ ions are prevented from oxidation is rationalized by modeling the system. Calculated band structures disclosed that Sn doping induces convergence of the AgSbSe2 valence bands, accounting for an enhanced electronic effective mass. The dramatically enhanced carrier transport leads to a maximized power factor for AgSb0.98Sn0.02Se2 of 0.63 mW m–1 K–2 at 640 K. Thermally, phonon scattering is significantly enhanced in the NC-based materials, yielding an ultralow thermal conductivity of 0.3 W mK–1 at 666 K. Overall, a record-high figure of merit (zT) is obtained at 666 K for AgSb0.98Sn0.02Se2 at zT = 1.37, well above the values obtained for undoped AgSbSe2, at zT = 0.58 and state-of-art Pb- and Te-free materials, which makes AgSb0.98Sn0.02Se2 an excellent p-type candidate for medium-temperature TE applications.
研究领域:
材料科学
·
表面化学
·
热电材料
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Nanomaterials
·
2022
·Vol. 12
·期 10
·1693
·
IF 5.719
Taifeng Shi,Mengran Chen,Zhenguo Liu,Qingfeng Song,Yixiang Ou,Haoqi Wang,Jia Liang,Qihao Zhang,Zhendong Mao,Zhiwen Wang,Jingyvan Zheng,Qingchen Han,Kafil M. Razeeb,Peng-an Zong
The past decades have witnessed surging demand for wearable electronics, for which thermoelectrics (TEs) are considered a promising self-charging technology, as they are capable of converting skin heat into electricity directly. Bi2Te3is the most-used TE material at room temperature, due to a high zT of ~1. However, it is different to integrate Bi2Te3for wearable TEs owing to its intrinsic rigidity. Bi2Te3could be flexible when made thin enough, but this implies a small electrical and thermal load, thus severely restricting the power output. Herein, we developed a Bi2Te3/nickel foam (NiFoam) composite film through solvothermal deposition of Bi2Te3nanoplates into porous NiFoam. Due to the mesh structure and ductility of Ni Foam, the film, with a thickness of 160 μm, exhibited a high figure of merit for flexibility, 0.016, connoting higher output. Moreover, the film also revealed a high tensile strength of 12.7 ± 0.04 MPa and a maximum elongation rate of 28.8%. In addition, due to the film’s high electrical conductivity and enhanced Seebeck coefficient, an outstanding power factor of 850 μW m−1K−2was achieved, which is among the highest ever reported. A module fabricated with five such n-type legs integrated electrically in series and thermally in parallel showed an output power of 22.8 nW at a temperature gap of 30 K. This work offered a cost-effective avenue for making highly flexible TE films for power supply of wearable electronics by intercalating TE nanoplates into porous and meshed-structure materials.
研究领域:
材料科学
·
能源技术
·
纳米科技
✓ 已验证
DOI
高影响因子
JOURNAL OF POLYMER ENGINEERING
·
2017
·Vol. 38
·期 4
·381-389
·
IF 0.658
Yan-Xin Liu,Hai-Hui Liu,Jian-Ping Wang,Xing-Xiang Zhang
Hybrids of poly(3,4-ethylenedioxythiophene) (PEDOT):poly(4-styrene sulfonate) (PSS)/multi-walled carbon nanotube (MWCNT)/graphene (P/M/G), which have high electrical conductivity and low thermal conductivity, were successfully prepared in aqueous solution through in situ polymerization of 3,4-ethylenedioxythiophene (EDOT) monomers in the presence of poly(sodium 4-styrene sulfonate) (PSSNa). Meanwhile, the composites were characterized by Raman spectroscopy, infrared (IR) spectroscopy, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy. Thermoelectric properties of the samples were measured at room temperature and 50°C. Compared with pristine PEDOT:PSS (P), PEDOT:PSS/MWCNT (P/M) and PEDOT:PSS/graphene (P/G), the power factor of P/M/G composites was significantly improved, whatever the temperature. It increased from 0.061 μW/mK 2 to 0.105 μW/mK 2 at room temperature and from 0.070 μW/mK 2 to 0.142 μW/mK 2 at 50°C, meaning 72% and 103% enhancement, respectively. The increased power factor is attributed to the synergic effects of MWCNT and graphene, a hybrid structure with excellent electronic coupling and more electric channels.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
ChemNanoMat
·
2022
·Vol. 9
·期 1
·e202200400
·
IF 3.82
Bo Zhu,Xu Lu,Jiadang Li,Wenhao Xie,Lifei Wang,Qiang Zhang,Jianfeng Fan,Yun Zheng
Graphical The substitution of iso-valent Bi for Sb is adopted to adjust the thermoelectric transport properties of the undoped Mg 3 Sb 2 compound. The improved power factor and figure of merit are obtained accordingly. Bismuth is the most common alloying element for high-performance Mg 3 Sb 2 -based thermoelectric compounds. However, the electrical and thermal transport data is lacking for undoped Mg 3 (Sb, Bi) 2 solid solutions. In this study, theoretical calculation results show that Bi alloying can reduce the band gap of Mg 3 Sb 2 , favoring the regulation of carrier concentration. Both Mg 3 Sb 2 and Mg 3 SbBi compounds present a single band structure on the valence band maximum at Γ of the Brillouin zone. Incorporating the Bi element can slightly increase the density of states (DOS) on the valence band maximum, which is beneficial for the Seebeck coefficient. Mg 3 Sb 2-x Bi x (0≤x≤0.8) compounds were experimentally prepared via ball milling (BM) combined with the spark plasma sintering (SPS) technique. The carrier concentration, electrical conductivity, and power factor of the samples tend to increase with the increasing Bi content. Bismuth alloying significantly reduces the total thermal conductivity in the low-temperature range, with the lowest value of 0.65 Wm −1 K −1 obtained at ∼400 K for the x=0.2 sample. The peak ZT value of 0.077 at 800 K and the average ZT of 0.051 in the temperature range of 450–800 K are obtained for the x=0.2 sample, which is 93% and 219% higher than those of the unalloyed sample, respectively. This work reveals the Bi-alloying induced transport mechanism and provides fundamental thermoelectric data regarding the undoped Mg 3 Sb 2-x Bi x (0≤x≤0.8) solid solutions.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
ORGANIC ELECTRONICS
·
2018
·
IF 3.68
Qiufeng Meng,Qinglin Jiang,Kefeng Cai,Lidong Chen
PEDOT:PSS coated Te (PC Te) nanorod/PEDOT:PSS composite films were prepared by a drop-casting technique. H 2 SO 4 treatment was employed to enhance thermoelectric (TE) properties of the composite films. The addition of PC Te nanorods increased both the electrical conductivity and the Seebeck coefficient of the composite films. An optimized power factor of 141.9 μW/mK 2 was obtained for the film containing 90 wt% PC Te nanorods treated with 12 M H 2 SO 4 at room temperature , which was 2.75 times as high as that of the untreated composite film, corresponding to the electrical conductivity and Seebeck coefficient of 204.6 S/cm and 83.27 μV/K, respectively. XPS and GIWAXS analysis revealed the removal of insulating PSS units and the rearrangement of PEDOT chains after the H 2 SO 4 treatment. Finally, a 9-leg TE generator prototype was fabricated using the optimized composite film. The maximum output power and area output power density produced from the prototype were 47.7 nW and 57.2 μW/cm 2 , respectively, at the temperature difference of 40 K.
研究领域:
材料科学
·
物理化学
✓ 已验证
DOI
高影响因子
Surfaces and Interfaces
·
2024
·
IF 5.7
Ye Zhang,Cunbin Zhu,Yongli Chen,Lu Wang,Xilong Huang,Linghong Zeng,Wenyan Lv
In this work, Ti 3 C 2 –Cl is introduced into poly(3,4-ethylenedioxythiophene): poly(4-styrenesulfonic acid) / single-walled carbon nanotubes (PEDOT: PSS/SWCNT, noted as PPSC) films to prepare ternary thermoelectric films of PEDOT: PSS/SWCNT/Ti 3 C 2 –Cl (PPSCT). The microscopic morphology, structures, and thermoelectric properties of PPSC and PPSCT films show that the introduction of Ti 3 C 2 –Cl results in a tendency of decreasing electrical as well as thermal conductivity , and the Seebeck coefficient is increased. When the content of Ti 3 C 2 –Cl reaches 8 wt%, the conductivity, Seebeck coefficient, and thermal conductivity of the PPSCT films reach the optimum values of 1683 S/cm, 21.69 μV/K, and 14.97 W/mK, respectively, and the power factor (PF) and thermoelectric figure of merit (ZT) are 79.23 μW/mK 2 and 1.58 × 10 –3 . The UPS and Hall effect results reveal that the improvement of the Seebeck effect of PPSCT mainly results from the ternary interfacial energy barrier as well as the change of carrier concentration. In addition, the wearable electronics devices demonstrate an output voltage of 4.5 mV and an output power of 54.36 nW under a 50 K temperature difference. The device displays a good monitoring sensitivity by reaching an output voltage of 0.6 mV at a 7 K temperature difference between the skin and the environment.
研究领域:
材料科学
·
电子工程
·
可穿戴设备
✓ 已验证
产品关联
DOI
高影响因子
Nature Communications
·
2024
·Vol. 15
·期 1
·1-10
·
IF 14.7
Jiang Yilin,Su Bin,Yu Jincheng,Han Zhanran,Hu Haihua,Zhuang Hua-Lu,Li Hezhang,Dong Jinfeng,Li Jing-Wei,Wang Chao,Ge Zhen-Hua,Feng Jing,Sun Fu-Hua,Li Jing-Feng
GeTe is a promising p-type material with increasingly enhanced thermoelectric properties reported in recent years, demonstrating its superiority for mid-temperature applications. In this work, the thermoelectric performance of GeTe is improved by a facile composite approach. We find that incorporating a small amount of boron particles into the Bi-doped GeTe leads to significant enhancement in power factor and simultaneous reduction in thermal conductivity, through which the synergistic modulation of electrical and thermal transport properties is realized. The thermal mismatch between the boron particles and the matrix induces high-density dislocations that effectively scatter the mid-frequency phonons, accounting for a minimum lattice thermal conductivity of 0.43 Wm −1 K −1 at 613 K. Furthermore, the presence of boron/GeTe interfaces modifies the interfacial potential barriers, resulting in increased Seebeck coefficient and hence enhanced power factor (25.4 μWcm −1 K −2 at 300 K). Consequently, we obtain a maximum figure of merit Z max of 4.0 × 10 −3 K −1 at 613 K in the GeTe-based composites, which is the record-high value in GeTe-based thermoelectric materials and also superior to most of thermoelectric systems for mid-temperature applications. This work provides an effective way to further enhance the performance of GeTe-based thermoelectrics.
研究领域:
材料科学
·
热电学
✓ 已验证
DOI
高影响因子
JOURNAL OF NANOPARTICLE RESEARCH
·
2020
·Vol. 22
·期 9
·1-14
·
IF 2.132
Li Ling,Jiang Xiangqian,Ban Chuncheng,Xie Dequan,Chen Weiping,Song Keguan,Liu Xiaowei
Thermoelectric (TE) material nanocomposite film is widely used in the design of many kinds of wearable flexible device and portable sensors. Herein, BNNT/Bi 2 Te 3 and BCNNT/Bi 2 Te 3 TE nanocomposite films were successfully fabricated by a cost-effective hot pressing and millipore membrane filter (HPMMF) method. Their thermoelectric performance was systematically investigated at room temperature, the highest power factor of the TE nanocomposite film was 1843.2 nW/mK 2 when the film contained 0.006 wt.% BCNNT. The Seebeck coefficient of the thermoelectric nanocomposite film will reach up 205 μV/K. The power factor of BCNNT/Bi 2 Te 3 TE nanocomposite film is 17.2 times higher than that of BNNT/Bi 2 Te 3 nanocomposite film and 14 times higher than that of Bi 2 Te 3 film. It is promising to be used in many situations such as flexible wearable device and solar cell thermoelectric power generation. Graphical abstract
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2019
·Vol. 7
·期 26
·15757-15765
·
IF 10.733
Rui Xu,Lulu Huang,Jian Zhang,Di Li,Jizi Liu,Jiang Liu,Jun Fang,Meiyu Wang,Guodong Tang
Thermoelectric materials that can directly convert thermal energy into electrical energy have great potential in solving the present energy crisis. SnSe has emerged as one of the most intriguing new thermoelectric materials since the discovery of the excellent thermoelectric properties of its single crystals. Here, we develop a new solution synthesized method (in situ magnetic field-assisted hydrothermal synthesis) for achieving new nanostructured SnSe integrated with Se quantum dots. The critical nucleation energy reduces and the nucleation rate increases during the hydrothermal synthesis process as a high magnetic field is applied, which leads to the presence of the homogeneous distribution of Se quantum dots and smaller nano grains. Enhanced density of states and the energy filtering effect contribute towards a significant enhancement in the Seebeck coefficient and power factor (PF) due to the Se quantum dots and smaller nano grains. The enhanced density of states was directly identified by ultraviolet photoelectron spectroscopic measurements. With the aid of a high magnetic field in solution chemistry, these materials maintain low thermal conductivity due to the Se quantum dots, smaller nano grains and nanoprecipitates. Benefiting from the enhanced power factor and reduced thermal conductivity, a high figure of merit (ZT) of ∼2.0 at 873 K was achieved in a Se quantum dot/Sn0.99Pb0.01Se nanocomposite. This work paves the way for the design of prospective thermoelectric materials by applying an external high magnetic field.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）