Nanoscale
·
2022
·Vol. 14
·期 27
·9771-9780
·
IF 8.307
Hang Yin,Ruishu Yang,Shuanhu Wang,Kexin Jin
Chemical doping is a dominating method for manipulating oxide two-dimensional electron gas (2DEG). However, enhancing the doping level while maintaining the metallic conduction remains a challenge, which limits detailed knowledge of 2DEG manipulation. Herein, we propose a concept of high-entropy heterointerface, which consists of a complex oxide (containing at least 5 elements) at either or both sides of the interface. By doubly doping Sr and Mn elements in the Nd and Al sites of NdAlO3, we grow Nd1−xSrxAl1−xMnxO3 (NSAMO) films onto SrTiO3 (STO) substrates to fabricate NSAMO/STO high-entropy heterointerfaces with different thicknesses (2–30 nm) and a wide range of doping ratios x (0.14–0.56). The 2DEG conducting behavior is maintained until x = 0.42, which is higher compared with similar studies. The varying x results in the coexistence of rich properties like a weak anti-localization (0.14–0.42), abnormal Hall effect (0.28 & 0.42), Lifshitz transition (0.42) and stable structure. These results confirm the potential of this strategy to tailor 2DEG in all-oxide interfaces.
研究领域:
材料科学
·
凝聚态物理
✓ 已验证
DOI
PubMed
高影响因子
Crystals
·
2023
·Vol. 13
·期 4
·623
·
IF 2.7
Changzheng Xie,Zhijie Chen,Xinghua Wang,Ying Meng,Yihao Wang
The perovskite LaCoO3and La0.8Sr0.2CoO3thin films were synthesized successfully by a polymer-assisted deposition method. The structural characterization and thermal decomposition measurements indicate that appropriately increasing the annealing temperature is helpful in improving the film crystallinity. Compared with LaCoO3films, the Curie temperature is enhanced to a higher temperature in La0.8Sr0.2CoO3films, which is attributed to the changes in both the valence state and spin state induced by the chemical doping. In addition, a broad transition temperature region is observed in La0.8Sr0.2CoO3films, revealing the existence of inhomogeneous ground states in this system.Keywords:ferromagnetic perovskite;chemical doping;spin-state transition;lattice relaxation
研究领域:
材料科学
·
物理学
✓ 已验证
DOI
高影响因子
MOLECULES
·
2023
·Vol. 28
·期 6
·2629
·
IF 4.6
Xinru Ma,Xuxia Shai,Yu Ding,Jie Zheng,Jinsong Wang,Jiale Sun,Xiaorui Li,Weitao Chen,Tingting Wei,Weina Ren,Lei Gao,Shukang Deng,Chunhua Zeng
Thermoelectric (TE) technology, which can convert scrap heat into electricity, has attracted considerable attention. However, broader applications of TE are hindered by lacking high-performance thermoelectric materials, which can be effectively progressed by regulating the carrier concentration. In this work, a series of PbSe(NaCl)x(x = 3, 3.5, 4, 4.5) samples were synthesized through the NaCl salt-assisted approach with Na+and Cl−doped into their lattice. Both theoretical and experimental results demonstrate that manipulating the carrier concentration by adjusting the content of NaCl is conducive to upgrading the electrical transport properties of the materials. The carrier concentration elevated from 2.71 × 1019cm−3to 4.16 × 1019cm−3, and the materials demonstrated a maximum power factor of 2.9 × 10−3W m−1K−2. Combined with an ultralow lattice thermal conductivity of 0.7 W m−1K−1, a high thermoelectric figure of merit (ZT) with 1.26 at 690 K was attained in PbSe(NaCl)4.5. This study provides a guideline for chemical doping to improve the thermoelectric properties of PbSe further and promote its applications.Keywords:chemical doping;salt-assisted;NaCl doping;PbSe;thermoelectric material;thermoelectric performance
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2019
·
IF 8.355
Jingxiang Wang,Hongli Liu,Sen Wu,Yi Jia,Hang Yu,Xianggao Li,Shirong Wang
Recently, developing insoluble cross-linkable functional layers plays a vital role for solution-processed organic light emitting diodes (OLEDs). Here, two vinyl-based cross-linkable hole transporting materials V-TPAVTPD and V-TPAVCBP are designed and synthesized. Additionally, cationic photoinitiator 4-octyloxydiphenyliodonium hexafluoroantimonate (OPPI) is first introduced to chemically induce vinyl-based photo cross-linking process, aiming at lowering cross-linking temperature and enhancing hole mobility. As a result, cross-linking can occur at expressly low temperature of 120 °C with >95% solvent resistance. Moreover, hole mobility is markedly enhanced with the value higher than 10 −3 cm 2 V −1 s −1 . When applying hole transporting layers (HTLs) to solution-processed green and red phosphorescent OLEDs, devices exhibit excellent properties. Particularly, the maximum current efficiency of 54.0 cd A −1 (green), 9.8 cd A −1 (red) and external quantum efficiency of 15.5% (green), 15.0% (red) are obtained when OPPI doped V-TPAVCBP serves as HTL. This low temperature feasible cross-linking process to prepare HTLs with preferable hole mobility promotes the development of OLEDs.
研究领域:
材料科学
·
光电技术
✓ 已验证
DOI
高影响因子
Chinese Physics B
·
2019
·Vol. 28
·期 3
·037803
·
IF 1.469
Xinli Ma,Rongjie Zhang,Chunhua An,Sen Wu,Xiaodong Hu,Jing Liu
Transition metal dichalcogenides (TMDCs) belong to a subgroup of two-dimensional (2D) materials which usually possess thickness-dependent band structures and semiconducting properties. Therefore, for TMDCs to be widely used in electronic and optoelectronic applications, two critical issues need to be addressed, which are thickness-controllable fabrication and doping modulation of TMDCs. In this work, we successfully obtained monolayer WS2 and achieved its efficient doping by chemical vapor deposition and chemical doping, respectively. The n- and p-type dopings of the monolayer WS2 were achieved by drop coating electron donor and acceptor solutions of triphenylphosphine (PPh3) and gold chloride (AuCl3), respectively, on the surface, which donates and captures electrons to/from the WS2 surface through charge transfer, respectively. Both doping effects were investigated in terms of the electrical properties of the fabricated field effect transistors. After chemical doping, the calculated mobility and density of electrons/holes are around 74.6/39.5 cm2·V−1·s−1 and 1.0 × 1012/4.2 × 1011 cm−2, respectively. Moreover, we fabricated a lateral WS2 p–n homojunction consisting of non-doped n-type and p-doped p-type regions, which showed great potential for photodetection with a response time of 1.5 s and responsivity of 5.8 A/W at VG = 0 V and VD = 1 V under 532 nm light illumination.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry A
·
2023
·Vol. 11
·期 44
·24351-24358
·
IF 11.9
Dunren He,Wanyi Nie,Huihui Huang
Hydrovoltaic technology is a promising approach for clean and renewable energy generation, owing to its unique ability to generate electricity from the interactions between nanomaterials and abundant water. However, the output current of hydroelectric generators, which is usually below 1 mA, needs improvement. Here, we demonstrate a large-scale integration of water-graphite hydroelectric generators that can produce an output current of up to 58 mA, surpassing the performance of existing hydroelectric generators, and capable of powering commercial electronics, such as electric fans and full-color liquid crystal display screens. Our results show that this low-cost and scalable hydroelectric generator has the potential to significantly expand the application domain and facilitate the development of clean and renewable energy sources.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
CARBON
·
2019
·
IF 7.466
Jinwei Wei,Bo Liang,Qingpeng Cao,Hangxu Ren,Youming Zheng,Xuesong Ye
Asymmetric transfer characteristics and hysteresis behaviors are two puzzling electronic transport properties in graphene field effect transistor (GFET). Herein, we presented systematic investigations on these phenomena by varying gate voltage sweeping rates and testing chemical atmospheres. Three different doping mechanisms for GFET were proposed to illustrate these behaviors: electric field doping, molecule chemical doping, and electrochemical doping by redox reactions . In ambient environment, the plateau's emergence in asymmetric transfer curve of GFET was attributed to the counteraction between n-type electric field doping and p-type O 2 /H 2 O electrochemical doping. The hysteresis effect difference in backward sweeping varied as a function of gate voltage sweeping rate, which has been offered a qualitative explanation in the context of thermodynamics and kinetics. In NH 3 , the degree of hysteresis effect in GFET increased with the vapor concentration rising up, while NO 2 atmosphere induced opposite behavior. Generally, the interplay of the three doping mechanisms accounts for the total Fermi level modulation and carrier migration behavior near the Dirac point. For instance, the electrochemical doping could occur spontaneously because the electric effect doping or chemical doping raised the graphene Fermi level high enough with respect to the electrochemical O 2 /H 2 O redox potential.
研究领域:
材料科学
·
电气工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Energy Materials
·
2018
·
IF 0
Xiaorong Gan,Lawrence Yoon Suk Lee,Kwok-yin Wong,Tsz Wing Lo,Kwun Hei Ho,Dang Yuan Lei,Huimin Zhao
The phase transition of multilayer MoS2 nanosheets from semiconducting 2H to metallic 1T (2H/1T) has been realized mainly by chemical methods (e.g., Li intercalation). Here, we develop a simple yet effective method, cyclic voltammetry, to successfully tune the 2H/1T phase transition of multilayer MoS2 nanosheets without using intercalation species. The phase transition is triggered by the electrochemical incorporation of S vacancies (obtained by electrochemical etching), which on the one hand injects electrons into the framework of S–Mo–S and on the other hand facilitates the sliding of S planes. Density functional theory calculations show that O doping in the framework of S–Mo–S decreases the energy barrier for forming S vacancies and stabilizes the 1T-phase by occupying the 4d orbital of Mo. Our calculations further show that the presence of S vacancies and O incorporation not only reduces the bandgap of MoS2, indicating an increased conductivity, but also decreases the hydrogen adsorption free energy, implying significant improvement of hydrogen evolution reaction (HER) activity. Indeed, the overpotential and Tafel plot of the electrochemically treated MoS2 nanosheets are decreased respectively by 174 mV and 25 mV/dec at a cathodic current density of 10 mA cm–2 compared with pristine 2H-MoS2 nanosheets. The HER experiment also reveals the order of catalytical activity for the studied phases and structural defects: 1T-MoS2 > S vacancies > O doping >2H-MoS2. Our study has provided a new route to control the phase transition of multilayer MoS2 nanosheets with promising applications potentially in catalysis and optoelectronics.
研究领域:
材料科学
·
电化学
·
催化
·
纳米技术
·
理论化学
✓ 已验证
产品关联
DOI
JOURNAL OF ELECTRONIC MATERIALS
·
2014
·Vol. 43
·期 6
·2435-2439
·
IF 1.675
Tan Qing,Li Jing-Feng
To study the possibility of SnS as an earth-abundant and environmentally friendly thermoelectric material, the electrical and thermal transport properties of bulk materials prepared by combining mechanical alloying and spark plasma sintering were investigated. It was revealed that SnS has potential as a good thermoelectric material, benefiting from its intrinsically low thermal conductivity below 1.0 W/m/K above 400 K and its high Seebeck coefficient over 500 μ V/K. Although the highest ZT value was 0.16 at 823 K in the pristine sample, further enhancement can be expected through chemical doping to increase the electrical conductivity. It was also revealed that changing the stoichiometric ratio and sintering temperature had less apparent influence on the microstructure and thermoelectric properties of SnS because redundant S in the powders decomposed during the sintering process.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Rizwan Ahmed Malik,Muhammad Habib,Hussain Alrobei
Lead-free dielectric ceramic capacitors have attracted substantial attention for high pulsed power technologies, but achieving a large recoverable energy storage density ( W rec ) with high efficiency ( η ) and good thermal stability remains a bottleneck. In this work, we address this challenge in (Bi,Na)TiO 3 -based relaxor ferroelectric through a composition design strategy that induces local structure heterogeneity. This heterogeneity is created from the local random field/stress of the chemical modifiers due to different valence states and ionic sizes, which promotes the formation of polar nano-regions (PNRs). These PNRs minimize the energy barrier, resulting in an excellent energy storage performance, W rec of 8.53 J/cm 3 and η of 80.7 %. Moreover, the material exhibits breakthrough thermal stability, maintaining a W rec ≈ 3.41 ± 0.40 J/cm 3 and η ≈ 82.2 ± 8.2 % over a wide temperature range up to 240 °C. This study provides a path for designing advanced relaxor ferroelectric dielectric ceramic capacitors for energy storage applications.
研究领域:
材料科学
·
功能陶瓷
·
介电材料
·
能源存储
·
固态物理
✓ 已验证
产品关联
DOI
高影响因子
Journal of Physical Chemistry Letters
·
2025
·
IF 4.6
Pengtian Liu,Tingting Dai,Chao Yan,Guozhen Bai,Sushihan Lu,Zilong Wang,Zhidong Lou,Yanbing Hou,Feng Teng,Yufeng Hu
Halide perovskites have garnered significant attention for their exceptional carrier mobility, balanced bipolar transport properties, and ion-electron mixing conductivity, making them highly promising for applications, such as solar cells, photodetectors, and memristors. Despite their potential, intrinsic ions and defects within these materials complicate effective doping, and interactions between metal electrodes and perovskite materials can trigger interfacial chemical reactions that compromise device stability and performance. This study examines the influence of Ag electrodes on perovskite devices, specifically investigating the n-doping effects of Agi+ interstitial ions in MAPbI3 perovskites through an integrated approach combining first-principles density functional theory (DFT) calculations and experimental analysis. Findings reveal that Agi+ interstitial ions, generated electrochemically at Ag electrodes, penetrate the MAPbI3 structure and migrate under an applied electric field, achieving stable n-doping under controlled bias conditions. Detailed characterization of the doping process was conducted using current density–time (J–t) measurements, electrochemical AC impedance (EIS), TOF-SIMS/XPS depth profiling, and temperature/illumination-dependent studies. Additionally, the memristive behavior of the device, including doping mechanisms and the formation of metallic conductive filaments, was demonstrated, offering insights into its potential applications in advanced electronics. These findings elucidate the physicochemical interactions at metal–perovskite interfaces under bias in diode devices.
研究领域:
材料科学
·
电化学
·
纳米技术
·
固体物理
·
电子器件
✓ 已验证
产品关联
DOI
PubMed
高影响因子
MACROMOLECULES
·
2025
·
IF 5.2
Yiting Liu,Rui Chen,Yuan Jiang,Xian Zhang,Yu Shen,Sichao Huang,Hongxiang Li,Zhongxiang Peng,Qiang Zhang,Zicheng Ding,Xiaozheng Duan,Yanchun Han
Chemical doping has emerged as a promising strategy for fabricating high-performance stretchable conjugated polymer films. However, the underlying working mechanisms remain poorly understood. Herein, by a combination of theory simulation and structural characterization, we demonstrate that the spatial distribution of chemical dopants in conjugated polymer films is critical for simultaneously enhancing the carrier mobility and stretchability of the films. Using the conjugated polymer poly(indacenodithiophene-co-benzothiadiazole) (IDTBT) and the dopant tris(4-bromophenyl) ammoniumyl hexachloroantimonate (Magic Blue, MB) as a model, we demonstrate that the intimate contact between MB and the IDTBT backbone promotes the efficient charge transfer via cation-π interactions. It not only induces a more planarized backbone with enhanced charge delocalization but also introduces structural disorder with enlarged π–π stacking distance. The former improves intrachain charge transport and reduces contact resistance in transistor devices, whereas the latter enables effective strain energy dissipation through chain sliding and alignment during stretching. Consequently, the IDTBT film exhibits ca. a 2-fold increase in both carrier mobility and fracture strain through chemical doping. Moreover, the doped film maintains a high mobility of 1.85 cm2 V–1 s–1 at 100% strain, significantly outperforming the pristine film (ca. 0.18 cm2 V–1 s–1 at 100% strain). This work provides a guideline for the chemical doping regulation to construct high-performance stretchable conjugated polymer films.
研究领域:
材料科学
·
高分子化学
·
电子器件
·
纳米技术
·
固体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）