ELECTROCHIMICA ACTA
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2012
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IF 3.832
Pingfan Du,Lixin Song,Jie Xiong,Ni Li,Zhenqiang Xi,Longcheng Wang,Dalai Jin,Shaoyi Guo,Yongfeng Yuan
Novel TiO 2 /ZnO core–sheath nanofibers (NFs) film was fabricated through an extraordinary coaxial electrospinning technique . Dye-sensitized solar cells (DSSCs) were assembled using the TiO 2 /ZnO NFs film as photoanode . FESEM , TEM, FTIR , XRD , XPS and UV–vis were used to characterize the NFs electrode film. Photocurrent–voltage ( I – V ) characteristic, incident photo-to-current conversion efficiency (IPCE) spectrum, and electrochemical impedance spectroscopy (EIS) measurements were performed to evaluate the DSSCs performance. The results reveal that the DSSCs based on the TiO 2 /ZnO core–sheath NFs are superior to their bare TiO 2 NFs-based counterparts. Compared with the latter, the overall energy conversion efficiency was enhanced from 4.47 to 5.17%. And the possible mechanism for this enhancement was discussed.
研究领域:
材料科学
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纳米技术
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能源材料
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光电化学
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半导体薄膜
✓ 已验证
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
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2021
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IF 4.094
Jingying Zhang,Yanchun Yang,Guonan Cui,H. Alata,Yiming Wang,Chengjun Zhu
Substitution of Zn 2+ ionic by Co 2+ ionic is known to suppress the cation disorder of Cu 2 ZnSn(S,Se) 4 thin films , which is helpful to obtain the excellent Cu 2 ZnSn(S,Se) 4 solar cell devices. In our work, the extra trace Co incorporation was added in the solution without affecting the compositions of other elements (i.e. Cu, Zn, and Sn) to enhance the electrical properties of Cu 2 ZnSn(S,Se) 4 thin films . And Co incorporation does not enter into the lattice nor be found in the selenized films after taking effect, but increases the crystallinity , compactness, carrier concentration, and electrical properties of Cu 2 ZnSn(S,Se) 4 thin films samples. By tuning the doping ratios of Co 2+ ionic, the surface roughness of the selenized films can be decreased from 110.2 nm (0 mol %) to 68.90 nm (5 mol %). As 1 mol % of Co 2+ ionic is doped, the carrier concentration of films can be also improved to 4.35 × 10 17 cm −3 from 2.63 × 10 16 cm −3 , and average surface current of films applied 1 V AC voltage can be increased from 2.426 nA to 4.454 nA. The enhanced properties of Co-incorporated films brings hope for the excellent performance of Cu 2 ZnSn(S,Se) 4 solar cells.
研究领域:
材料科学
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光伏技术
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半导体薄膜
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可再生能源
✓ 已验证
DOI
高影响因子
JOURNAL OF POWER SOURCES
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2016
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IF 6.333
Yanchun Yang,Xiaojiao Kang,Lijian Huang,Song Wei,Daocheng Pan
Earth abundant Cu 2 ZnSn(S,Se) 4 (CZTSSe) has been considered as one of the most promising thin film solar cell absorber candidates. Here, we develop a facile water-based precursor solution approach for depositing high-efficiency Cu 2 ZnSn(S,Se) 4 thin film solar cells. In this environmentally friendly approach, inexpensive elemental Cu, Zn, Sn and S powders are used as the starting materials and are dissolved in the aqueous solution of thioglycolic acid and methylamine, forming a homogeneous precursor solution for depositing Cu 2 ZnSnS 4 nanocrystal thin film . As-deposited CZTS nanocrystal thin films are selenized to form the large-grain CZTSSe absorber layers . It was found that Na doping plays an important role in the formation of the extremely dense and flat CZTSSe absorber layer, and fill factor can be significantly improved for Na-doped CZTSSe solar cells, which lead to a photoelectric conversion efficiency of 6.96% with an open-circuit voltage of 378 mV, a short current density of 28.17 mA cm −2 , and a fill factor of 65.4%.
研究领域:
材料科学
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新能源材料
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半导体薄膜
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光伏技术
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无机功能材料
✓ 已验证
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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2023
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IF 4.1
Hang Bai,Yufang Li,Honglie Shen,Long Wang,Hechao Li,Zhihong Xie,Andi Chen,Zheng Shi,Wei Wang
Antimony selenide (Sb 2 Se 3 ) has become a potential semiconductor material for a wide range of optoelectronic applications because of its unique one-dimensional crystal structure and corresponding excellent anisotropic optical and electronic properties. Herein, uniform and flat Sb 2 Se 3 thin films with [hk1]-optimized growth orientation are prepared by adjusting the deposition potentials and selenization temperatures using a facile electrochemical deposition method. Then these films are applied in heterojunction-type photodetectors with the structure of Mo/Sb 2 Se 3 /CdS/ZnO/ITO/Ag. The best performances are obtained for devices with a deposition potential of −0.55 V and a selenization temperature of 300 °C. At 0 bias, the detector yielded a responsivity of 25.4 mA/W and a detectivity of 1.06 × 10 11 Jones at 635 nm visible light with a light intensity of 5 mW. The results show that high-quality Sb 2 Se 3 thin films can be prepared by electrochemical deposition under proper preparation conditions, which lays the foundation for the application of the electrochemical deposition method in the field of optoelectronic devices .
研究领域:
材料科学
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光电子学
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半导体薄膜
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电化学沉积
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）