Inorganic Chemistry Frontiers
·
2022
·Vol. 9
·期 11
·2644-2658
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IF 7.779
Xiaoyan Yang,Xiaoling Zeng,Xing Ming,Li Yang,Alberto J. Fernández-Carrión,Sihao Deng,Lunhua He,Xiaojun Kuang
BiVO4 scheelite is one of the few tetrahedra-based structures able to display vacancy-mediated oxide-ion conduction upon the use of an acceptor-doping strategy, leading to oxide-ion migration. In order to modulate the ionic migration process, it is of utmost importance to understand the different parameters affecting it. Here we review phase formation, oxygen vacancy stabilization, and migration for a wide variety of acceptor metal dopants in scheelite BiVO4. Among them, Ca2+-doped materials present the widest solid-solution range, leading to optimized oxide-ion conductivities at moderately high temperatures (σb: ∼10−3 S cm−1 at 500 °C), mainly as a result of their smaller size mismatch with Bi3+ and lower oxygen vacancy defect energy. The results gathered herein provide a useful guide for designing new oxide-ion conductors and tailoring oxide conductivity through the proper selection of doping agents according to several criteria, such as the oxygen defect formation energy, atom size mismatch, polarizability, and bond-dissociation energy with oxygen.
研究领域:
材料科学
·
无机化学
·
固体离子学
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能源材料
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电化学
✓ 已验证
DOI
高影响因子
POLYMER TESTING
·
2023
·
IF 5.1
Wenchao Zhang,Min Jiang,Feng Guan,Shiyu Liu,Liangjun Wang,Yanpeng Li,Dong Yue,Jialong Li,Xiaoxu Liu,Yu Feng
High-performance polymer dielectrics are critical for high-tech fields such as electrical insulation and aerospace. Nevertheless, it is still challenging to achieve simultaneous improvements in both dielectric constant and breakdown strength in polymer dielectrics. In this work, Al 3+ substitution Si 4+ in SiO 2 by high-temperature sintering to create hole traps to obtain the acceptor-doped fillers Si 1-0.75x Al x O 2 (SA (x mol%)), and polyimide (PI) dielectric containing SA fillers with different contents were synthesized using in-situ polymerization. The hole traps in the fillers modulate the electrical behavior of the polymer dielectric, thereby significantly increasing the dielectric constant and breakdown strength by modulating the polarization behavior and capture carriers. Among them, the dielectric constant of the 1.25 vol% SA (1.5 mol%)/PI composite was increased to 3.60 at 1 Hz, and the breakdown strength E b reached 581.5 kV/mm. This work provides a new synthesis strategy for simultaneously achieving high insulation and high polarization of polymer dielectric.
研究领域:
材料科学
·
电气工程
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2024
·
IF 8.1
Lei Shi,Wenyue Zhao,Zhao Wang,Wenjing Hua,Xiaoxia Yang,Xinyu Cao,Weidong Fei,Yu Zhao
The novel photovoltaic effect mechanism has been consistently corroborated over the last decade, however, the low photocurrent density remains a significant impediment to its practical applications. In this study, an extra-large photocurrent density is achieved in the acceptor (A 2+ , A = Ca, Sr, Ba)-donor (W 6+ ) co-doped BiVO 4 (BVO) films prepared with a sol-gel method. A photocurrent density of 4.05 mA/cm 2 under 450 nm light illumination and a large detection rate of 8.4 × 10 11 Jones and 5.4 × 10 11 Jones for 365 nm and 450 nm are respectively obtained. The high photoelectric conversion efficiency (PCE) of 2.4 % is obtained in the Au/BVO/Pt sandwich structure under 365 nm (10 mW/cm 2 ) light illumination using Sr 2+ -W 6+ co-doped film, even if the light is obstructed by Au top electrode. A possible mechanism based on uneven composition formed by acceptor-donor ions is proposed to explain the enhancement of the photovoltaic effect in A 2+ -W 6+ co-doped BVO films. The composite ion doping engineering presents a novel strategy for improving the photoelectric conversion efficiency in single-layer films.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
SOLID STATE IONICS
·
2025
·
IF 3.3
Sara Adeeba Ismail,Lulu Jiang,Hui Guo,Wenhao Li,Donglin Han
Ba 7 Nb 4 MoO 20 has acceptably high ionic conductivity at 600–800 °C and is attractive for potential application in high temperature solid state electrochemical devices. Up to now, most of the research focuses on isovalent and donor-doping to improve the electrical properties of Ba 7 Nb 4 MoO 20 . In this work, an acceptor-doping strategy was taken by doping Sc and Zr to partially substitute Nb. More vacant oxygen sites thereby form for charge compensation, leading to the increasing proton concentration following the compositional sequence of hydrated Ba 7 Nb 4 MoO 20 < Ba 7 Nb 3.97 Zr 0.03 MoO 19.985 < Ba 7 Nb 3.97 Sc 0.03 MoO 19.97 . Notably, both the H 2 O/D 2 O isotope effect and EMF measurements indicate that the proton conduction – if there is any – is negligibly small, and the Sc and Zr-doped Ba 7 Nb 4 MoO 20 is essentially an oxide ion conductor in the temperature range studied in this work.
研究领域:
材料科学
·
固体离子学
·
电化学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）