RARE METALS
·
2025
·
IF 11
Liu Wan-Ping,Liu Jun,Li Xue-Lei,Li Qing-Wen,Xu Zhi-Hui,Liu Hui-Rong,Cao Jia-Feng,Bayaguud Aruuhan,Baoyin Hexi
In sulfide-based all-solid-state lithium batteries (ASLBs), the development of high-capacity anode materials with stable interfaces to sulfide solid-state electrolytes (SSEs) is critical. Here, In 2 O 3 is explored as an anode material for ASLBs for the first time, demonstrating exceptional interfacial stability and electrochemical performance. The In 2 O 3 anode, with a substantial mass loading of 7.64 mg cm −2 , sustains a charge-specific capacity of 528.0 mAh g −1 (4.03 mAh cm −2 ) at a current density of 0.76 mA cm −2 over 500 cycles, with a capacity retention of 81.2%. Additionally, it exhibits remarkable long-term cycling stability (2900 cycles) under a high current density of 3.82 mA cm −2 , with an exceptionally low decay rate of 0.016% per cycle. The charge–discharge mechanism of the In 2 O 3 anode is elucidated in detail, revealing that the electrochemical evolution of In 2 O 3 in ASLBs involves not only the alloying/dealloying process of indium (In) but also a conversion reaction between In and Li 2 O. Notably, as cycling progresses, the conversion reaction of In and Li 2 O diminishes, with the reversible alloying/dealloying process becoming predominant. This work offers valuable insights for advancing oxide anode materials in sulfide-based ASLBs. Graphical abstract
研究领域:
材料科学
·
能源存储与转换
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2025
·
IF 13.2
Wenjie Yang,Qiankun Zhou,Hui Dong,Rongqiang Hu,Aoyun Kang,Lingli Liu,Xin Liang,Heng Zhang,Hongdian Lu,Chunxiang Wei,Anthony Chun Yin Yuen,Wei Yang
Bismuth is a promising anode material for sodium-ion batteries (SIBs) due to its ultrahigh theoretical volumetric capacity. However, its practical application is hindered by volume expansion during cycling, which leads to rapid capacity degradation. In this study, we reported an in-situ catalytic growth approach to synthesize Bi@GDY, a nanocomposite material comprising bismuth nanospheres encapsulated within a graphdiyne (GDY) core-shell structure. This unique architecture effectively mitigated volume expansion while enhancing the sodium storage performance, resulting in remarkable electrochemical properties, including high capacity, superior cycling stability, and reliable performance over a wide temperature range. The Bi@GDY anode demonstrated an outstanding capacity of 361.6 mAh g −1 with a retention rate of 96.9 % after 3000 cycles. In-situ and ex-situ characterizations revealed improved reaction kinetics and confirmed the characteristic alloying/dealloying mechanism. Furthermore, a Bi@GDY//NVP full cell delivered a high capacity of 183.2 mAh g −1 after 700 cycles with a retention rate of 86.9 %, underscoring its potential for practical SIB applications. These findings position Bi@GDY as a highly promising anode material for next-generation SIBs.
研究领域:
材料科学
·
电化学
·
能源存储
✓ 已验证
产品关联
DOI
高影响因子
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
·
2023
·Vol. 24
·期 4
·4152
·
IF 5.6
Chao Jin,Zigang Wang,Chang Luo,Chunling Qin,Yongyan Li,Zhifeng Wang
As high-capacity anode materials, spinel NiFe2O4aroused extensive attention due to its natural abundance and safe working voltage. For widespread commercialization, some drawbacks, such as rapid capacity fading and poor reversibility due to large volume variation and inferior conductivity, urgently require amelioration. In this work, NiFe2O4/NiO composites with a dual-network structure were fabricated by a simple dealloying method. Benefiting from the dual-network structure and composed of nanosheet networks and ligament-pore networks, this material provides sufficient space for volume expansion and is able to boost the rapid transfer of electrons and Li ions. As a result, the material exhibits excellent electrochemical performance, retaining 756.9 mAh g−1at 200 mA g−1after cycling for 100 cycles and retaining 641.1 mAh g−1after 1000 cycles at 500 mA g−1. This work provides a facile way to prepare a novel dual-network structured spinel oxide material, which can promote the development of oxide anodes and also dealloying techniques in broad fields.Keywords:NiFe2O4;dealloying;porous;lithium-ion batteries
研究领域:
材料科学
·
能源存储
✓ 已验证
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2025
·
IF 8.2
Bo Liu,You Li,Sai Xu,Jianglong Chang,Yuefeng Gao,Hongquan Yu,Yichao Wang,Baojiu Chen
Lead-free double perovskite (DP) materials have garnered growing interest because of their outstanding optoelectronic attributes. Nevertheless, realizing efficient, multimodal photoluminescence (PL) with adjustable emission spectra within single-host DP materials still poses a formidable hurdle. Herein, Er-based lead-free DPs (Cs2NaErCl6) were developed, which achieves downshift (DS) emissions from visible to near-infrared (NIR) and multicolor upconversion (UC) emissions, resulting from the abundant energy levels of Er3+ ions. Alloying with Yb3+ introduces new Yb3+-Er3+ cross-relaxation (CR) pathways, leading to a 308.5-fold increase in DS red emission and achieving a maximum color purity of 98.63%. Additionally, Yb3+ alloying enhances UC luminescence by 10.8-fold due to its strong absorption cross section around 980 nm. The colors of the UC emission can be adjusted by altering the doping concentration of Yb3+ and laser power density. Spectral analysis and theoretical calculations reveal the high compatibility of Yb3+ ions with Cs2NaErCl6, and the critical role of CR and energy-transfer processes in achieving efficient, tunable, and multimodal PL. Furthermore, the developed DP materials have been utilized in anticounterfeiting, information encoding, and narrow-band NIR photodetectors, expanding the versatile uses of rare-earth (RE)-based DP materials in the optoelectronics field.
研究领域:
材料科学
·
光学
·
光电子学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Inorganic Chemistry Frontiers
·
2022
·Vol. 9
·期 21
·5562-5571
·
IF 7.779
Fudong Zhang,Xia Qi,Mingkai He,Fengshan Zheng,Lei Jin,Zhanhui Peng,Xiaolian Chao,Zupei Yang,Di Wu
Previous studies have revealed that both Bi doping and Bi2Te3 alloying are successful strategies to optimize the thermoelectric performance of SnTe; however, detailed and thorough investigations on exactly how they differ in modulating the band structure and microstructure were seldom given. Through a systematic comparison between Bi-doped and Bi2Te3-alloyed SnTe, we find in this work that despite the fact that they both contribute to the valence band convergence of SnTe, Bi2Te3 alloying induces little effect on the hole concentration unlike the typical n-type feature of Bi-doping; moreover, Bi2Te3 alloying tends to produce dense dislocation arrays at micron-scale grain boundaries which differs significantly from the substitutional point defect character upon Bi-doping. It was then found that Bi2Te3 alloying exhibits a relatively higher quality factor (B ∼ μw/κlat) at higher temperatures than Bi-doping. Subsequent Ge-doping in Bi2Te3-alloyed samples results in further valence band convergence and hole concentration optimization and eventually results in a maximum figure of merit ZT of 1.4 at 873 K in the composition of (Sn0.88Ge0.12Te)0.97-(BiTe1.5)0.03.
研究领域:
材料科学
·
热电材料
✓ 已验证
DOI
高影响因子
JOURNAL OF SOLID STATE CHEMISTRY
·
2020
·
IF 2.726
Dehai Liang,Xin Lian,Xianli Li,Binbin Luo
Two dimensional (2D) hybrid metal halide perovskites (MHPs) with broadband emission have attracted enormous attention, which is highly promising for single-component solid state lighting. However, it remains a challenge to unveil the underlying origin of broadband emission and achieve high quantum yield (QY). Herein, 2D single-layered [NH 3 (CH 2 ) 4 NH 3 ]CdBr 4 (Cd–P) has been successfully prepared. By partially replacing Cd 2+ with Pb 2+ , the energy band of Cd–P shows a transformation from indirect to direct, supported by the density functional theory (DFT) calculations. Benefiting from the change of energy band, alloyed Cd x Pb 1-x -P shows an intensive broadband emission spanning the whole visible range with a maximum of photoluminescence (PL) QY of 58%. Temperature-dependent and time-resolved PL uncover that the broadband emission origins from the coupling between free excitons (FEs) and [CdBr 6 ] 4- octahedra , instead of [PbBr 6 ] 4- . These findings provide a deep insight into the origin of STEs emission and an effective approach to promote the broadband emission for Cd-based MHPs.
研究领域:
材料科学
·
光学
✓ 已验证
DOI
高影响因子
CRYSTENGCOMM
·
2024
·Vol. 26
·期 10
·1418-1429
·
IF 2.6
Jun Liao,Sihao Ye,Xupeng Zhu,Wenfeng Fu,Shuwen Xue,Jing Qi,Jun Zhang
Kesterite Cu2ZnSnS4 (CZTS) is considered as one of the most promising thin-film solar cell and photocatalytic materials; however, its efficiency in practical photoelectric applications is often seriously limited by the presence of large numbers of Cu–Zn antisite defects. Alloying with Ag to fabricate Ag-alloyed CZTS ((AgxCu1−x)2ZnSnS4, ACZTS) can reduce the Cu–Zn antisite defects in CZTS, but few research studies have been able to separately clarify the effect of Ag content and growth temperature on large-sized (AgxCu1−x)2ZnSnS4 single crystals. In this study, centimeter-scale high-quality ACZTS single crystals were synthesized via an Ag-alloying strategy by a molten salt method for the first time. The results showed that the synthesized ACZTS have a high-quality single-crystal structure. A series of experiments was performed using various characterization techniques and it was found that Ag content and growth temperature were crucial in determining the size of ACZTS single crystals obtained through a molten salt method and that the associated CZTS base generated at high temperature was beneficial for further ACZTS single-crystal growth in this high-temperature environment. The experimental results showed that the growth mechanism of ACZTS crystals prepared using a molten salt method could be attributed to a type of epitaxial growth process. Our study provides a promising approach for growing large-sized ACZTS single crystals with high quality that can provide a potential single-crystal platform for the study of light-emitting diodes, photocatalytic hydrogen production, etc.
研究领域:
材料科学
·
光电材料
·
晶体生长
✓ 已验证
产品关联
DOI
高影响因子
RARE METALS
·
2021
·Vol. 41
·期 3
·931-941
·
IF 4.003
Guo Jun,Wang Zi-Yuan,Zhu Yu-Ke,Chen Lin,Feng Jing,Ge Zhen-Hua
Bi 2 S 3 is composed of inexpensive and environmental friendliness elements, which has received extensive interests and been investigated as a promising mid-temperature thermoelectric material for years. Even pure Bi 2 S 3 possesses a high Seebeck coefficient and low thermal conductivity, its low electrical conductivity leads to a low figure of merit (ZT) value. In this work, Bi 2 S 3 fabricated by solid-state melting combined with spark plasma sintering can significantly enhance the thermoelectric performance via introducing small amounts of Cu and BiCl 3 . Cu interstitial doping and Cl substitution on S site result in a large increase in electrical conductivity. Additionally, the enhanced phonon scattering is derived from the point defects caused by element doping, the grain boundaries, and the small amount of secondary phase, which leads to the low thermal conductivity. Finally, a high ZT value of 0.7 is obtained at 773 K and reaches a large average ZT of 0.36 in the temperature range from room temperature (RT) to 773 K for the Cu-interstitial-doped and BiCl 3 -alloyed (Cu 0.01 Bi 2 S 3 + 0.175 mol% BiCl 3 ) sample. Furthermore, the mechanical properties of the Cu 0.01 Bi 2 S 3 + 0.175 mol% BiCl 3 sample are lower than those of other Bi 2 S 3 samples, which stem from the weak chemical bonding strength. Graphic abstract
研究领域:
材料科学
·
能源材料
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
ChemNanoMat
·
2022
·Vol. 9
·期 1
·e202200400
·
IF 3.82
Bo Zhu,Xu Lu,Jiadang Li,Wenhao Xie,Lifei Wang,Qiang Zhang,Jianfeng Fan,Yun Zheng
Graphical The substitution of iso-valent Bi for Sb is adopted to adjust the thermoelectric transport properties of the undoped Mg 3 Sb 2 compound. The improved power factor and figure of merit are obtained accordingly. Bismuth is the most common alloying element for high-performance Mg 3 Sb 2 -based thermoelectric compounds. However, the electrical and thermal transport data is lacking for undoped Mg 3 (Sb, Bi) 2 solid solutions. In this study, theoretical calculation results show that Bi alloying can reduce the band gap of Mg 3 Sb 2 , favoring the regulation of carrier concentration. Both Mg 3 Sb 2 and Mg 3 SbBi compounds present a single band structure on the valence band maximum at Γ of the Brillouin zone. Incorporating the Bi element can slightly increase the density of states (DOS) on the valence band maximum, which is beneficial for the Seebeck coefficient. Mg 3 Sb 2-x Bi x (0≤x≤0.8) compounds were experimentally prepared via ball milling (BM) combined with the spark plasma sintering (SPS) technique. The carrier concentration, electrical conductivity, and power factor of the samples tend to increase with the increasing Bi content. Bismuth alloying significantly reduces the total thermal conductivity in the low-temperature range, with the lowest value of 0.65 Wm −1 K −1 obtained at ∼400 K for the x=0.2 sample. The peak ZT value of 0.077 at 800 K and the average ZT of 0.051 in the temperature range of 450–800 K are obtained for the x=0.2 sample, which is 93% and 219% higher than those of the unalloyed sample, respectively. This work reveals the Bi-alloying induced transport mechanism and provides fundamental thermoelectric data regarding the undoped Mg 3 Sb 2-x Bi x (0≤x≤0.8) solid solutions.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2018
·
IF 3.779
Kejia Kang,Rong Tu,Guoqiang Luo,Jian Zhang,Jiawen Zhu,Qiang Shen,Lianmeng Zhang
In this study, Re alloying and self-generated hard phase enhancement were used to improve the strength and toughness of W. The arc-melting W-based composite with 10 wt% Re and 1 wt% SiC addition is composed of toughening W-Re matrix and ceramic particles (W 2 C and W 5 Si 3 ). This composite having high strain capacity (37.1%) at room temperature (more than 5 times of W), exhibits the excellent hardness (5.04 GPa), yield strength (0.92 GPa) and fracture strength (1.78 GPa) due to the synergetic mechanism, grain refinement, and good interfaces bonding state. The synergetic mechanism of Re and SiC addition on strength and toughness was proposed.
研究领域:
材料科学
·
力学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2017
·
IF 3.133
Xiao Zhang,Yiming Zhou,Yanling Pei,Yuexing Chen,Bifei Yuan,Shuangmei Zhang,Yuan Deng,Shengkai Gong,Jiaqing He,Li-Dong Zhao
SnTe, one lead-free analogue of PbTe, has been paid attention in thermoelectric community because it has the similar rock-salt crystal structure and electronic band structure . However, SnTe possesses a very high total thermal conductivity (∼10.0 W m −1 K −1 at room temperature) and a mediocre ZT (∼0.2 at 723 K). In this study, to reduce its thermal conductivity, we prepare SnTe samples by melting reaction followed by mechanical alloying and spark plasma sintering . We demonstrate that both total thermal conductivity and lattice thermal conductivity can be considerably reduced through reducing particle size from micro-scale to nano-scale via facially mechanical alloying method. Experimental results show that the total thermal conductivity at room temperature can be reduced from ∼10 W m −1 K −1 for SnTe ingot to ∼3Wm −1 K −1 for SnTe with mechanical alloying 25 h. Correspondingly, the lattice thermal conductivity at room temperature was reduced from ∼5Wm −1 K −1 to ∼2Wm −1 K −1 . Combination of reduced thermal conductivity and moderate power factor, average ZT ave can be increased by 33.3%, from 0.09 for SnTe ingot to 0.12 for SnTe with nano-grain size.
研究领域:
材料科学
·
热电学
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2020
·Vol. 8
·期 9
·4931-4937
·
IF 11.301
Zhiwei Huang,Dongyang Wang,Caiyun Li,Jinfeng Wang,Guangtao Wang,Li-Dong Zhao
In this work, the thermoelectric performance of p-type PbSe was improved dramatically by enhancing the Seebeck coefficient and reducing electronic thermal conductivity through CdTe alloying. CdTe alloying effectively increased the effective mass of p-type Pb0.98Na0.02Se due to band flattening and promoting the valence band convergence, which contributed to a high Seebeck coefficient of ∼238 μV K−1 at 860 K and large power factor of ∼18.2 μW cm−1 K−2 at 860 K for Pb0.98Na0.02Se + 4% CdTe. Furthermore, CdTe alloying reduced the carrier mobility of Pb0.98Na0.02Se due to the enhanced scattering of impurity atoms, which results in a remarkable reduction of electronic thermal conductivity. As a result, due to its higher power factor and lower thermal conductivity, a high thermoelectric figure of merit ZT ∼1.5 at 860 K was achieved for Pb0.98Na0.02Se + 4% CdTe. This paper provides one novel approach to enhance the thermoelectric performance of p-type PbSe through synergistically manipulating electrical and thermal transport properties.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）