JOURNAL OF ALLOYS AND COMPOUNDS
·
2023
·
IF 6.2
Yaowei Wei,Ke Zhou,Xianghuan Meng,Xiangyu Sun,Zhao Ma,Zhenzhen Li,Daming Zhuang
Due to the low toxicity and abundance of nature, Cu 2 ZnSn(S,Se) 4 (CZTSSe) has been considered as a promising solar cell material. The absorber is the most critical structure in a solar cell, which determines the performance of the cell. Selenium-rich CZTSSe can be formed by replacing S atoms of CZTS with Se. However, the method of adding Se element through H 2 Se is constrained due to the toxicity of H 2 Se. The work adopted a method to prepare excellent CZTSSe absorbers without H 2 Se. The stack structure CZTS precursor films were prepared by solution-based deposition, and CZTSSe absorbers were obtained after selenization annealing at 550 °C with 0.1, 0.2 and 0.3 g of selenium powders in argon, respectively. The obtained CZTSSe absorbers had pure CZTSSe phase, high absorption coefficients and appropriate bandgaps. After annealing with 0.2 g of selenium powder, the holes in the CZTSSe film diminished, and the grain size of absorbers increased from 0.31 µm in the CZTS absorber to 1.17 µm. The peaks of Se 3d for CZTSSe absorber were observed, the lattice spacing of plane (112) increased from 3.10 Å to 3.22 Å, and the work function decreased from 5.31 eV to 5.19 eV. The improved performance of absorber will be of great significance for the efficiency of CZTSSe device.
研究领域:
材料科学
·
太阳能电池研究
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Xiaogu Huang
Facile solvothermal way to synthesize quaternary CuIn 0.7 Ga 0.3 S 2 (CIGS) semiconductor nanocrystals has been reported here. X-ray powder diffraction, energy dispersive X-ray spectrometry, transmission electron microscopy , X-Ray photoelectron spectroscopy and UV–Vis spectrometry were used to characterize CIGS nanocrystals. As-synthesized CIGS nanocrystals ink was used to prepare absorber layer. After selenization and device fabrication , the CIGS solar cells exhibited 0.36% power conversion efficiency under 1.5 AM illumination.
研究领域:
材料科学
·
能源科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2020
·Vol. 49
·期 10
·6208-6213
·
IF 1.774
Chen Ruilan,Cui Guonan,Yang Yanchun,Li Yuemin,Alata H.,Tian Xiao,Tegus O.
Abandoning the traditional deposition of as-prepared Cu 2 ZnSnS 4 (CZTS) thin films in a glove box, a modified thiol-based solution system suitable for deposition in air is described to further reduce device production costs. In this modified approach, metal salts and thiourea are used as the starting materials and are dissolved in a mixed solution of thioglycolic acid and 2-methoxyethanol, forming a homogeneous precursor solution. The as-deposited CZTS thin films are obtained by spin-coating the precursor solution in air, followed by the selenization process to form large-grained Cu 2 ZnSn(S,Se) 4 thin films. Combining the microstructural results with compositional analyses, the optimal selenization conditions for the Cu 2 ZnSn(S,Se) 4 absorber layer were found to be 540°C and 10 min.
研究领域:
材料科学
·
薄膜制备
·
光电材料
·
能源材料
·
半导体工艺
✓ 已验证
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2023
·
IF 6.9
Lei Wang,Ruijian Liu,Hongmei Luan,Yiming Wang,Letu Siqin,Shuyu Li,Jiayong Zhang,Bin Yao,Chengjun Zhu
The absorbers of kesterite Cu 2 ZnSn(S,Se) 4 (CZTSSe) that have undergone rapid thermal process (RTP) selenization typically exhibit a double-layer structure, with a fine crystal layer at the bottom, which degrades the performance of devices. We propose an efficient strategy for actively constructing the double-layer absorber to improve the quality of the small grains in the bottom layer. Compared to traditional methods, this method ensures uniform element distribution, particularly for Se element, and enables a more desirable Cu-poor and Zn-rich composition with a Zn/Sn ratio closer to the standard stoichiometric ratio, resulting in a reduction in harmful internal defects. This strategy eliminates small grains at the bottom and decreases grain boundary formation, resulting in a dense double-layer structure. The high-quality CZTSSe absorber not only reduces carrier recombination during back transmission, further reducing reverse saturation current (J 0 ) and increasing optical current density (J L ), but also enhances shunt resistance (R sh ) and decreases series resistance (R S ). The estimated contribution percent for PCE improvement due to changes in J L , J 0 , R sh , R S , and A are 17.20 %, 120.01 %, 1.15 %, 6.50 %, and -44.86 %, respectively. Ultimately, the highest photoelectric conversion efficiency (PCE) increased from 8.73 % to 10.49 %, and device uniformity improved considerably. This study highlights the significance of optimizing the microstructure of CZTSSe absorber layer in enhancing the performance of CZTSSe solar cells, and will provide guidance for producing high-quality CZTSSe absorber layers.
研究领域:
材料科学
·
太阳能技术
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2021
·
IF 5.316
Xiaogong Lv,Chengjun Zhu,Yiming Wang,Lei Wang,Jianming Shi
Kesterite Cu 2 Zn 1- x Cd x Sn(S,Se) 4 (CZCTSSe) alloy thin films were fabricated by the water-based solution approach. The influence of Cd doping on the morphology, phase structure, element valence states, optical, electrical, and device performance were comprehensively examined. Cd was clearly alloyed into the Cu 2 ZnSn(S,Se) 4 (CZTSSe) absorber layer to form the CZCTSSe compound. By controlling the relative Cd content, band gap values ( E g ) of the CZCTSSe thin films were engineered between 1.10 eV and 1.21 eV. In addition, doping with Cd led to the enhancement of grain growth as well as improvement of the conductivity and photoelectric property of the absorber layer. In particular, the CZCTSSe ( x = 0.4) absorber layer exhibited a pure phase, larger grain size, compact and uniform topography, suitable band gap, Cu-poor and (Cd+Zn)-rich composition, higher conductivity and better photoelectric response. Power conversion efficiency (PCE) is improved from 4.37% of the CZCTSSe ( x = 0.0) device to 5.16% of CZCTSSe ( x = 0.4) device, and the increases of short-circuit current ( J sc ) achieved to 8.94 mA/cm 2 . The encouraging results suggest that doping of Cd is an effective way to improve CZTSSe film properties and promote device efficiency.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2022
·
IF 7.305
Jiajia Guo,Yang Mao,Jianping Ao,Yanchen Han,Chun Cao,Fangfang Liu,Yi Zhang
Although the ohmic-contact and electrostatic field can be regulated by the intermediate layer for efficient carrier extraction, challenges remain in high-quality back contact as well as improved quality of crystallized CZTSSe absorber layer simultaneously. Here, we introduce a controllable CdS nanolayer prepared by the chemical bath deposition (CBD) process between the CZTS precursors and Mo back contact. The results disclose that the surface chemistry of the naked Mo film can be modified by the formed CdS nanolayer and thus MoS 2 complex during the chemical bath process. However, such CdS nanolayer and MoS 2 complex can be readily consumed during the following selenization process, without deteriorating the ohmic-back contact. Simultaneously, the as-grown CZTSSe absorber is not only with high crystallinity and less composition fluctuations, but also doped by Cd 2+ . Subsequently the efficiency of CZTSSe solar cells is increased by 26% as CdS nanolayer is introduced. This work provides a cost-effective and universal approach to design and modify the interface or surface of photovoltaic and photoelectrochemical devices.
研究领域:
材料科学
·
太阳能电池技术
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY MATERIALS AND SOLAR CELLS
·
2017
·
IF 4.784
Xiaoyan Gan,Ou Wang,Keyong Liu,Xiangjun Du,Liling Guo,Hanxing Liu
We present the fabrication and characterization of two dimensional (2D) perovskites (PEA) 2 (MA) m-1 Pb m I 3 m+1 (PEA=phenylethylammonium, MA=methylammonium, m=1,2,3) for application as light absorbers in solar cells. Films of 2D perovskite series show high stability under humid air , with band gaps decreasing with increasing m values, from 2.36 eV for (PEA) 2 PbI 4 (m=1) to 1.94 eV for (PEA) 2 (MA) 2 Pb 3 I 10 (m=3). Owning to the smaller bandgap, favorable vertical growth characteristics, and appropriate energy band structure of (PEA) 2 (MA) 2 Pb 3 I 10 , planer perovskite solar cells based on (PEA) 2 (MA) 2 Pb 3 I 10 exhibit best cell performance. Incorporation of TiO 2 nanorod arrays into (PEA) 2 (MA) 2 Pb 3 I 7 based perovskite solar cells are further found to be useful in improving the cell performance, ascribing to the improved quality and coverage of the perovskite films, as well as the enhanced electronic contact between the perovskites and the electron transporting layer. By optimizing the TiO 2 NR lengths, an efficiency of 3.72% is obtained for (PEA) 2 (MA) 2 Pb 3 I 10 perovskite cells with 600 nm-long TiO 2 NRs as scaffolds, which is more than a time higher than that of the planer analogue device. Our study to design 2D perovskite solar cells demonstrates the importance of material structure and device configuration for efficient solar cells, highlighting the validity of TiO 2 nanorods in functionalizing 2D perovskites for photovoltaic applications.
研究领域:
材料科学
·
光伏技术
✓ 已验证
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2020
·Vol. 49
·期 12
·7044-7053
·
IF 1.774
Yang Yufeng,Luo Jundong,Luo Ningqi,Wei Aixiang,Liu Jun,Zhao Yu,Xiao Zhiming
In this paper, we report the effect of the Cs + fraction x on the structure, morphology and optical properties of mixed organic–inorganic cation Cs x MA 1− x PbI 3 absorption layers prepared using an anti-solvent-assisted one-step solution deposition method in an ambient environment. By changing the ratios of cesium iodide (CsI) to methyl iodide (MAI) in the precursor solution, the Cs + fraction x varies from 0 to 1. The hole-transporting-material (HTM)-free perovskite solar cells (PSCs) based on the Cs x MA 1− x PbI 3 absorption layers were fabricated in ambient air, and their photovoltaic performance was studied. Results indicate that when the Cs + fraction x is less than 0.3, Cs + ions mainly replace a fraction of MA + ions in the MAPbI 3 lattice and do not lead to a change in the crystal structure of the MAPbI 3 . When the Cs + fraction x is between 0.3 and 0.7, one part of Cs + ions incorporated in the MAPbI 3 lattice replaces MA + ions (α-phase), while the other part forms a yellow photovoltaic-inactive δ-CsPbI 3 phase. The Cs x MA 1− x PbI 3 films with x ≥ 0.8 contain much of the photovoltaic-inactive δ-CsPbI 3 phase. The band gap of the Cs x MA 1− x PbI 3 films increases from 1.53 eV to 1.65 eV with the increase of the Cs + fraction x . The PSCs based on the Cs 0.1 MA 0.9 PbI 3 films exhibit remarkable improvement in device efficiency and stability.
研究领域:
材料科学
·
光伏技术
·
物理化学
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2016
·Vol. 8
·期 19
·10160-10165
·
IF 7.76
Wangen Zhao,Daocheng Pan,Shengzhong (Frank) Liu
Cu2ZnSn(S,Se)4 (CZTSSe) semiconductors have been a focus of extensive research effort owing to low-toxicity, high abundance and low material cost. Yet, the CZTSSe thin film solar cell has a low open-circuit voltage value that presents challenges. Herein, using GeSe2 as a new Ge source material, we have achieved a wider band gap CZTSSe-based semiconductor absorber layer with its band-gap controlled by adjusting the ratio of SnS2 : GeSe2 used. In addition, the Cu2Zn(Sn,Ge)(S,Se)4 thin films were prepared with optimal Ge doping (30%) and solar cells were fabricated to attain a respectable power conversion efficiency of 4.8% under 1.5 AM with an active area of 0.19 cm2 without an anti-reflection layer.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ADVANCED MATERIALS
·
2025
·
IF 26.8
Mingqing Zhang,Dongjie Zhou,Yu Zhang,Huanchen Yu,Zhengji Wen,Xiao Dai,Kun Ba,Yunxiang Di,Tong Shu,Jianlu Wang,Jiaming Hao,Meikang Han
Thin-film interference with a Fabry–Pérot cavity is a classic approach to generating structural colors for anti-counterfeiting, sensors, and aesthetical demands. However, an absorbing layer capable of balancing the reflectance and absorption bands remains elusive, thereby limiting the chromatic and luminant tunability of structural coloration. Here wide-color-gamut films are reported with MXene as the absorbing layer in a simple trilayer configuration for vivid structural colors, outperforming conventional metal- and semiconductor-based films. It is demonstrated that the ‘lossy’ refractive indices of different metallic MXene compositions broaden the absorption bandwidth of multilayer films and maintain the high reflectance, enabling a substantial and complementary gamut with high tunability beyond the area of sRGB color space. Various structural color films/patterns based on MXenes showcase the compatibility for different scenarios. The results accompanied by theoretical calculations provide insights into the fundamental understanding of light-MXene interaction in coloration. The unique optical absorbance and solution processibility of the MXene family offer a versatile platform for the physical manipulation of light beyond conventional manufacturing approaches.
研究领域:
光学材料
·
纳米光子学
·
功能涂层
·
材料科学
·
表面科学
·
仿生光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
SOLAR ENERGY
·
2021
·
IF 5.742
Fengying Wu,Hu Li,Liquan Yao,Wenwei Lin,Limei Lin,Wenjuan Chen,Dong Wei,Shenglong Liu,Shuiyuan Chen,Guilin Chen
MoS 2 thin film is deposited on ITO/CdS substrate by in-situ hydrothermal method, which is expected to be a potential absorber material for planar heterojunction solar cell due to its high absorber coefficient and carrier mobility. The CdS buffer layer provides a robust template for the quasi-epitaxial growth of MoS 2 with (0 0 2) preferred orientation by enjoying the analogical hexagonal structures and the shared sulfur atoms, resulting in a benign interface of CdS/MoS 2 . Then a device with ITO/TiO 2 /CdS/MoS 2 /Carbon-Ag structure is assembled after coating carbon-Ag electrode. The effects of the growth characteristics, morphology changes and optical properties of MoS 2 on the device performance are studied systematically. Finally, a primary efficiency of 0.12% is achieved using a P-type MoS 2 absorber with a thickness of 305 nm, exhibiting an outstanding stability. The one-dimensional solar cell capacitance simulator (SCAPS) is further used to reveal the bottleneck of device performance. After optimizing the doping density (1 × 10 15 cm −3 ) and defect density (<5 × 10 15 cm −3 ) of MoS 2 film as well as inserting a hole transport layer, the efficiency of MoS 2 planar device can be enhanced to 10.77%. This work provides an in-situ growth route for constructing a CdS/MoS 2 planar heterojunction as a potential candidate for the low-cost solar cells.
研究领域:
材料科学
·
能源科学
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2018
·
IF 8.097
Wangen Zhao,Fengyang Yu,Shengzhong Frank Liu
The development of Cu2ZnSn(S,Se)4 (CZTSSe) solar cells determines the prospect of thin-film photovoltaic devices because of some of their strengths. However, the usual solution fabrication processes of CZTSSe absorbing layers are either too tedious or highly toxic. Here, we have developed an alternative strategy to prepare kesterite CZTSSe absorber films with a simple and low-toxicity solution process by replacing the commonly employed thiol-based compounds using the glycolic acid aqueous solution, which significantly reduces the environment pollution and toxicity, providing a possibility toward the green solvent process. The power conversion efficiency of 6.81% has been acquired based the aqueous solution-processed CZTSSe thin film via optimizing the fabrication technology.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）