Advanced Materials Technologies
·
2022
·Vol. 8
·期 1
·2200679
·
IF 8.856
Tong Chen,Chunyun Wang,Guoshen Yang,Qiang Lou,Qingping Lin,Shengdong Zhang,Hang Zhou
Monolithic integration of perovskite materials and their optoelectronic devices with well-developed thin-film transistor (TFT) backplane is leading to new applications in displays and image sensors. Herein, a scalable polyimide assisted patterning approach for monolithic integration of perovskite based high-sensitive phototransistor array on indium gallium zinc oxide (IGZO) active matrix backplane is introduced. Polyimide vias are first formed by conventional photolithography process, through which uniform perovskite films of arbitrary patterns with feature size less than 20 µm are fabricated by spin-on-patterning method. Using this technique, patterns of quasi 2D perovskite photoabsorbing layer are precisely deposited onto the channel area of the photosensing IGZO TFT, forming high-performance phototransistors with responsivity and detectivity reaching 835.7 A W −1 and 5.4 × 10 12 Jones, respectively. An image sensor with 8 × 8 pixels array containing both photosensing perovskite/IGZO transistors and switching IGZO transistors is demonstrated, in which the switching IGZO transistor elements on the backplane are protected by the non-patterned region of the polyimide encapsulation layer. This whole fabrication process is compatible with TFT manufacturing process and will significantly reduce the cost needed for constructing next generation high-resolution image sensors.
研究领域:
材料科学
·
电子工程
·
光电子学
✓ 已验证
DOI
高影响因子
Journal of Materials Chemistry C
·
2020
·Vol. 8
·期 41
·14409-14422
·
IF 7.059
Xingyue Liu,Xianhua Tan,Zhiyong Liu,Xuning Zhang,Tielin Shi,Guanglan Liao
CsPbBr3 photodetectors (PDs) are attracting tremendous attention for their superior properties, such as ultrafast light response and high chemical stability. However, the widely-used spin-coating technique involved in the preparation process of CsPbBr3 PDs restricts the construction of large-scale PD arrays, making it challenging for their applications in high-resolution image sensing. Here, we demonstrate fully vapor-deposited CsPbBr3 PDs with all the functional layers deposited through an evaporation route. The employment of an inexpensive copper(II) phthalocyanine (CuPc) hole conductor and the abandonment of the electron conductor can significantly decrease the whole production costs. An ultrathin MoO3 buffer layer is further introduced to passivate the defect densities of the CsPbBr3 perovskite and tailor the band alignment of the whole device. The reduced interface energy barrier and non-radiative recombination loss of the MoO3-modified devices are revealed by both experimental characterization and theoretical density functional theory (DFT) analysis. The best-performing MoO3-modified CsPbBr3 PD achieves an ultrafast response time of 0.96 μs, an ultrahigh on/off ratio of 1.17 × 106 and a detectivity of 5.22 × 1012 Jones at 0 V bias voltage. This performance is one of the best among all the self-powered electron/hole-conductor-free perovskite PDs. A large-area (57.8 cm2) image sensor comprising 25 × 25 CsPbBr3 PD arrays is further fabricated. Owing to the intrinsic advantages of the evaporation technique in depositing large-area and uniform films, the as-designed 625-pixel sensor exhibits a salient imaging capability. Our work opens up new avenues for the mass production of cost-effective, large-area and high-performing CsPbBr3 PD arrays for applications in image sensing.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
高影响因子
Advanced Materials Interfaces
·
2021
·Vol. 8
·期 20
·2100801
·
IF 6.147
Yi Li,Hongde Luo,Longmei Mao,Longxin Yu,Xifeng Li,Libo Jin,Jianhua Zhang
In this study, p-type delafossite CuCrO 2 nanomaterials are synthesized via a one-step hydrothermal reaction. An organic photodiode (OPD) with an inverted stack is fabricated by utilizing such CuCrO 2 as the hole-transporting layer. The single OPD device shows the dark current density of 6.48 × 10 −8 A cm −2 , and an external quantum efficiency of 16.2% at a 525 nm illumination, and a −5 V bias. Its responsivity and detectivity are 68.5 mA W− 1 and 4.75 × 10 11 cm Hz 1/2 W −1 , respectively. A large-area, flat-panel image sensor is also realized similarly by applying the materials and structure onto a thin-film transistor backplane. The active area and pitch of flat-panel sensor are 75.0 mm × 81.0 mm and 150 µm, respectively and its resolution is 510 × 470. The performance of the organic image sensor is evaluated. The results indicate the materials and device have potential applications for the flat-panel detector.
研究领域:
材料科学
·
光电子学
·
传感器技术
✓ 已验证
产品关联
DOI
高影响因子
iScience
·
2022
·
IF 6.107
Ruisi Wang,Shanshan He,Shizhen Chen,Weixing Shu,Shuangchun Wen,Hailu Luo
Computing metasurfaces have shown the extraordinary ability to precisely perform optical analog operations to the input light wave, and therefore exhibit greater potentials toward sensing applications. Here, we propose a unique application of computing metasurface for chiral edge sensing by incorporating a weak-value amplification technique. The computing metasurface performs the spatial differentiation operations of phase objects and extracts the edge-enhanced images, because the phase gradient generally occurs at the edge. The chirality-induced polarization rotation acts as the preselection state and the spatial differentiation operations in the metasurface provide weak coupling. The amplified pointer shift related to the tiny polarization rotation will eventually lead to an asymmetric edge-enhanced image. Owing to the high sensitivity of the weak-value amplification, we experimentally demonstrate a high-contrast recognition of chirality by edge detection, which may have potential applications in real-time measurement and separation of chiral enantiomers.
研究领域:
光学
·
传感技术
·
材料科学
✓ 已验证
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2025
·
IF 9.7
Yuting Sun,Jian Jiang,Yu-Ting Xu,Yuhong He,Ziyan Liu,Aijun Li,Haotong Wei,Hai Xu,Hitoshi Tamiaki,Shin-ichi Sasaki,Xiao-Feng Wang
Photodetectors, with high sensitivity and broad spectral response, drive the advancements in optical imaging technology. In this work, utilizing the absorption differences of chlorophyll-a derivative (Chl) and [6,6]-phenyl-C 61 -butyric acid methyl ester, two distinct structures of multifunctional organic photodetectors (OPDs) are fabricated, namely, bulk heterojunction (BHJ) and quasiplanar heterojunction (Q-PHJ). Chl, by modulating its doping concentration, served as both an active layer and an electron trap, enabling the BHJ OPD to exhibit a photomultiplication effect, and allowing the Q-PHJ OPD to achieve improved response speed (0.12/0.13 μs) and specific detectivity (2.20 × 10 13 Jones). In addition, the visible image-sensing function has been demonstrated in the OPD arrays. Based on the bidirectional current response behavior of Q-PHJ OPD under bias voltage regulation, the moving detection function is implemented by combining it with background subtraction, extracting the moving objects from the image stream.
研究领域:
材料科学
·
光学工程
·
生物化学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Materials Technologies
·
2022
·Vol. 7
·期 7
·2101639
·
IF 8.856
Chuqiao Hu,Hao Chen,La Li,Hui Huang,Guozhen Shen
The enriched surface functional group such as OH termination and unique 2D structure of Ti 3 C 2 T x MXene provide the feasibility to form hydrogen bonds with organic photosensitive materials as van der Waals heterostructures, thus can realize the improved photoresponsivity of near infrared (NIR) photodetectors (PDs). In this work, an organic–inorganic van der Waals heterostructure-based NIR PD array is designed using Ti 3 C 2 T x MXene as conductive electrodes and RAN film as active materials (Ti 3 C 2 T x -RAN PDs). The on-off ratio of the fabricated devices shows 6.25 times higher than that of PDs using thermal evaporated Au electrode (Au-RAN PDs) under 1064 nm laser excitations. The fabricated Ti 3 C 2 T x -RAN NIR PDs also possess outstanding mechanical stability with no obvious photoresponse degradation under different bending states and high transparency with a transmittance above 70% in the visible region. Owing to the high performance of the Ti 3 C 2 T x -RAN PDs, a 1024-pixel (32 × 32) image sensor array is fabricated to achieve delicate, vivid, and higher resolution imaging of a “deer,” opening up a new avenue for the biomimetic vision and flexible wearable accurate image sensing.
研究领域:
材料科学
·
光学工程
·
电子器件
·
柔性电子
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2023
·Vol. 15
·期 17
·7803-7811
·
IF 6.7
Tian Sun,Tong Chen,Jiahao Chen,Qiang Lou,Zihao Liang,Guijun Li,Xiaoyun Lin,Guoshen Yang,Hang Zhou
Despite the impressive developments in perovskite optoelectronic devices, their long-term stability remains a major challenge. Chemical reactions and ion exchange at the metal/perovskite contact interface are two significant factors that lead to the failure of perovskite devices. To address this issue, a titanium nitride (TiN) layer is introduced as a robust corrosion-resistant coating between perovskite films and metal electrodes. By introducing TiN layer, a perovskite photodiode with dark current down to 3.25 × 10−11 A cm−2 is realized. Consequently, the TiN-based perovskite photodiode shows a specific detectivity of 1.21 × 1014 cm W−1 Hz1/2, which is approximately two orders of magnitude higher than that of the control device without a TiN layer. Under continuous illumination of a 520 nm green light for 576 000 cycles, the responsivity of the TiN-based photodetector remains at 94.27% of its initial value. The TiN-based photodetector exhibits superior stability under thermal stress. After aging at 85 °C for 572 h, the TiN-based photodetector retains 72% of its initial responsivity. Using the TiN-based photodiode, a perovskite image sensor containing 64 × 64 pixelated perovskite photodiodes is constructed over an amorphous silicon thin-film transistor (TFT) backplane. The perovskite image sensor exhibits real-time imaging capability and long-term stability for over 6 months. This study highlights the importance of using metallic nitrides to achieve high-performance and air-stable perovskite devices for optoelectronic applications.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Materials & Interfaces
·
2019
·
IF 8.456
Yujie Yan,Xiaomin Wu,Qizhen Chen,Yaqian Liu,Huipeng Chen,Tailiang Guo
The identifying characteristic of an organic electrochemical transistor (OECT) is the coupling between ionic and electronic charges within the entire volume of the channel. In this work, by taking advantage of the volumetric nature of the OECTs’ response, a novel flexible photodetector is reported for the first time based on all-solid-state OECT with an excellent responsivity of up to 6.7 × 106 A/W, detectivity as high as 3.6 × 1013 Jones, and a fast response of ∼0.13 s in the visible range, which are superior to those of the majority of the reported organic phototransistors (OPTs) based on field-effect transistors (FETs) and even better than those of FET-based phototransistors with two-dimensional (MoS2 and graphene) and perovskite materials. The high performance of the devices was ascribed to the combination of the higher carrier mobility of poly(3,4-ethylenedioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) as a channel and the volumetric nature of the OECTs’ response, and the charge density of the volumetric channel was efficiently modulated by incident light compared to FETs. Moreover, OECT-based OPTs with quantum dots (CdSe/ZnS) as a light sensitizer were characterized under ultraviolet light, and they exhibited excellent photosensitivity, which further verified the superiority of OECT for phototransistors. Furthermore, a flexible image sensor was fabricated for the first time by integrating flexible OECTs-OPTs into a 10 × 10 array, which can clearly identify the target image under a bending state, indicating the great potential of OECTs-OPTs in the application of low-power, ultrasensitive flexible photodetectors and imaging technology.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Journal of Materials Chemistry C
·
2022
·Vol. 10
·期 9
·3387-3395
·
IF 8.067
Yuqing Song,Xiaobao Xu,Yuanzhou Zhang,Zeyao Han,Jiaxin Liu,Junyu Li,Yousheng Zou
As an artificial perception system, a neuromorphic vision sensing system can imitate the complex image sensing and processing functions of a human visual neural network. In order to simulate the nervous system, people often need to integrate multiple functional components such as sensors and processors into a sophisticated circuit system or prepare a multi-functional optoelectronic device through a complex and tedious process. The high cost and complicated preparation process will undoubtedly limit the future development of a neuromorphic vision system. Herein, we show a perovskite-based transformational photodetector that can mimic image sensing and preprocessing functions in a vision system. The pristine photodetector is prepared by a simple one-step method and has an on–off ratio of ∼107, a low noise current of ∼4.27 × 10−13 A Hz−0.5, a −3 dB bandwidth of 185 kHz, and a specific detectivity of 3.48 × 1011 Jones. Then, we utilize the reversible interaction between NH3 and MAPbI3, and adjust irradiation to induce dynamic transformation of the perovskite, so that the photocurrent of the photodetector exhibits enhanced behavior of short-term synaptic plasticity over time. The photocurrent with 3.36 mW light intensity shows ∼225% enhancement after 60 pulses, while the photocurrent with 0.48 mW light intensity shows ∼178% enhancement, which can enhance the contrast of the transmitted image and realize the image transmission and preprocessing functions of a neuromorphic vision sensing system. We believe that this work will provide new potential for the future application of photodetectors in neuromorphic vision sensing.
研究领域:
材料科学
·
神经科学
·
光电技术
✓ 已验证
DOI
高影响因子
ADVANCED MATERIALS
·
2024
·Vol. 37
·期 23
·2404013
·
IF 27.4
Yunxia Hu,Jun Wang,Mohsen Tamtaji,Yuan Feng,Tsz Wing Tang,Mohammadreza Amjadian,Ting Kang,Mengyang Xu,Xingyi Shi,Dongxu Zhao,Yongli Mi,Zhengtang Luo,Liang An
Van der Waals junctions hold significant potentials for various applications in multifunctional and low-power electronics and optoelectronics. The multistep device fabrication process usually introduces lattice mismatch and defects at the junction interfaces, which deteriorate device performance. Here the layer engineering synthesis of van der Waals homojunctions consisting of 2H-MoTe 2 with asymmetric thickness to eliminate heterogenous interfaces and thus obtain clean interfaces is reported. Experimental results confirm that the homostructure nature gives rise to the formation of pristine van der Waals junctions, avoiding chemical disorders and defects. The ability to tune the energy bands of 2H-MoTe 2 continuously through layer engineering enables the creation of adjustable built-in electric field at the homojunction boundaries, which leads to the achievement of self-powered photodetection based on the obtained 2H-MoTe 2 films. Furthermore, the successful integration of 2H-MoTe 2 homojunctions into an image sensor with 10 × 10 pixels, brings about zero-power consumption and near-infrared imaging functions. The pristine van der Waals homojunctions and effective integration strategies shed new insights into the development of large-scale application for two-dimensional materials in advanced electronics and optoelectronics.
研究领域:
光电子学
·
纳米电子学
·
二维材料
·
半导体器件
·
图像传感技术
✓ 已验证
DOI
高影响因子
Science Advances
·
2025
·Vol. 11
·期 36
·
IF 12.5
Zeping He,Boning Sun,Hui Lu,Xidi Sun,Zhangsheng Xu,Yegang Liang,Qiuchun Lu,Yang Yu,Kaiyu Hu,Swapnadeep Poddar,Wenqiang Wu,Wenchao Gao,Xun Han,Zhiyong Fan,Caofeng Pan
The human visual system’s real-time focus-tunable imaging capability has inspired curved imaging system development. However, curved image sensors mimicking the human retina typically lack tunable curvature to match the curved Petzval surface throughout the focus-tunable range. Here, we propose a focus-tunable real-time curved imaging system based on a tunable-curvature perovskite curved image sensor. Using parylene C film for waterproofing and encapsulation, the ultrathin perovskite curved image sensor with the hierarchical mesh design is demonstrated, which conforms to spherical surfaces of different radii while maintaining mechanical stability during deformation. The image sensor exhibits low detection limit (10 nanowatts per square centimeter) and long-term stable dynamic photoresponse. Combining the image sensor with a tunable lens achieves clear images at different distances via simultaneously adjusting both sensor and lens radii. Furthermore, through integrating image sensor with a readout matrix and wireless data collection component, the real-time imaging system is demonstrated with real-time focus-tunable imaging capabilities.
研究领域:
光学成像
·
传感器技术
·
材料科学
·
柔性电子学
·
生物医学工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
危险品化学品经营许可证（带存储）