CERAMICS INTERNATIONAL
·
2024
·
IF 5.1
Jin Qin,Zuo Tian,Gang Chen,Yu Zhao
Bismuth-based semiconductor materials have garnered significant attention because of their appropriate optical bandgap and substantial photoelectric conversion efficiency. Enhancing the photocurrent and fill factor of photovoltaic films is essential for developing high-performance optoelectronic devices. In this study, high-performance BiVO 4 -ZnTiO 3 multilayer films were fabricated using a straightforward sol-gel method, where the incorporation of ZnTiO 3 films significantly improved the photovoltaic performance of BiVO 4 . Through structural design aimed at enhancing light utilization, the BiVO 4 -ZnTiO 3 multilayer film achieved a photocurrent density of 1.9 mA/cm 2 at 450 nm, along with a fill factor of 46.8 % in the composite multilayer structure. The improvement in film performance is attributed to the overall multilayer stacking effect. This study offers a novel approach for utilizing bismuth-based semiconductors in optoelectronics.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
JOURNAL OF POWER SOURCES
·
2015
·
IF 6.217
Xichang Bao,Yujin Wang,Qianqian Zhu,Ning Wang,Dangqiang Zhu,Junyi Wang,Ailing Yang,Renqiang Yang
The quality and stability of perovskite films are critical for solar cells using this technology. Here, we fabricate a high-quality CH 3 NH 3 PbI 3 perovskite film by introducing small amounts of N -methyl-2-pyrrolidone into a mixture of γ-butyrolactone and dimethylsulphoxide. The perovskite film consists of compact grains (average sizes of ∼57 nm) with unclear boundaries which show a mirror-like surface with the root mean square roughness of only 2.39 nm. The power conversion efficiency of 11.77% is obtained with the fill factor as high as 80.52% under one sun illumination (100 mW cm −2 ). Furthermore, the stability of the perovskite solar cells is greatly improved by forming compact perovskite films with excellent surfaces. The results indicate that high-quality perovskite films with compact grains are a promising choice for high-stable, efficient perovskite solar cells.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2023
·Vol. 11
·期 21
·11161-11169
·
IF 11.9
Qian Xiao,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yafang Qi,Yuena Meng,Litao Han,Zhi Zheng,Sixin Wu
Advances in the development of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells are urgently needed to further exploit their high-efficiency and low-cost nature. However, almost all the CZTSSe photovoltaics are presently fabricated using physically sputter-deposited i-ZnO as a window layer, which often results in self-doping with detrimental oxygen vacancies (VO) and zinc interstitial (Zni) defects, leading to ineffective charge collection and enlarged interface recombination losses. Herein, a solution-processed ZnO:Li nanoparticle (NP) window layer is demonstrated via the construction of a high-quality ZnO:Li/CdS/CZTSSe heterojunction to enhance the charge collection and minimize the interface recombination. The interstitial Li doping at a certain content significantly enhances the electrical conductivity of ZnO and quasi-Fermi level splitting at the p–n junction interface and reduces the concentration of VO and Zni defects. These electric benefits finally improve the conversion efficiency from 11.31% up to 12.60% with significant gains in FF and Voc. Our findings suggest that developing a ZnO:Li NP window layer is an effective method to manage electrical conductivity, contact resistance and interface band offset at the p–n junction, boosting the development of high-efficiency and low-cost kesterite solar cells to a higher level.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
Energy & Environmental Science
·
2025
·
IF 30.8
Shengwen Zou,Jingjing Zhang,Yi Xin,Jinlong Jin,Guangxin Liu,Xiaojun Yan,Jianmei Huang
SnO2 is one of the best electron-transport materials for perovskite solar cells (PSCs). However, the limited interfacial contact and the reaction occurring at the buried interface between the perovskite and SnO2 reduce their performance. Herein, we revealed a strong deprotonation reaction of formamidinium cation that occurred at the buried interface during perovskite growth under a nitrogen atmosphere. In contrast, this reaction was considerably inhibited by moisture when the perovskite was grown under an ambient atmosphere (Amb-perovskite). Thus, defects at the buried interface of the Amb-perovskite were reduced, considerably suppressing the non-radiative recombination. Amb-PSC resulted in an efficiency of 25.69%, with an ultra-high fill factor of 86.21% and enhanced operational stability without decay after more than 1000 h under continuous 1-sun illumination. This work provides an efficient strategy for perovskite film annealing under an ambient atmosphere to minimise the buried interface loss. Its scaling-up potential and easy-processibility make it a promising strategy for low-cost large-scale manufacturing of PSCs.
研究领域:
材料科学
·
光伏技术
·
界面化学
✓ 已验证
产品关联
DOI
高影响因子
SOLAR ENERGY
·
2017
·
IF 4.018
Yingli Pei,Jing Guo,Dongxing Kou,Wenhui Zhou,Zhengji Zhou,Qingwen Tian,Yuena Meng,Sixin Wu
The doping of indium into absorber layer has been proven to be beneficial for hybrid buffer structured Cu 2 ZnSn(S, Se) 4 (CZTSSe) solar cells, but it is difficult to precisely control the doping content only relying on In diffusion from In 2 S 3 emitter. Herein, we use the solution method to prepare In-substituted CZTSSe layer by directly doping In 2 Se 3 into metal chalcogenides precursor solution. The doping content can be precisely controlled and the influences of indium doping on cell performance are systematically discussed. Mott-Schottky and resistivity measurements indicate that the carrier concentration and charge transport process are monotonically enhanced with increasing In/(In + Sn) content (0 at.%, 3 at.%, 6 at.% and 12 at.%). The improvements of series resistance also lead to a monotonic increase of fill factor ( FF ) from 52.1% to 64.8%. Due to the larger recombination at high doping content, the 6 at.% In content device finally contributes the highest power conversion efficiency of 8.47%. It is expected that a precisely controlled indium doping could further improve cell performance for efficient hybrid buffer structured devices.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2021
·
IF 9.229
Biwen Duan,Licheng Lou,Fanqi Meng,Jiazheng Zhou,Jinlin Wang,Jiangjian Shi,Huijue Wu,Yanhong Luo,Dongmei Li,Qingbo Meng
The post-heating treatment of the CZTSSe/CdS heterojunction can enhance the interfacial properties of kesterite Cu2ZnSn(S,Se)4 (CZTSSe) solar cells. In this regard, a two-step annealing method was developed to enhance the heterojunction quality for the first time. That is, a low-temperature (90 °C) process was introduced before the high-temperature treatment, and 12.3% efficiency of CZTSSe solar cells was achieved. Further investigation revealed that the CZTSSe/CdS heterojunction band alignment with a smaller spike barrier can be realized by the two-step annealing treatment, which assisted in carrier transportation and reduced the charge recombination loss, thus enhancing the open-circuit voltage (VOC) and fill factor (FF) of the devices. In addition, the two-step annealing could effectively avoid the disadvantages of direct high-temperature treatment (such as more pinholes on CdS films and excess element diffusion), improve the CdS crystallization, and decrease the defect densities within the device, especially interfacial defects. This work provides an effective method to improve the CZTSSe/CdS heterojunction properties for efficient kesterite solar cells.
研究领域:
材料科学
·
光伏技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Materials Interfaces
·
2022
·Vol. 9
·期 6
·2102331
·
IF 6.389
Beibei Zong,Jianguo Deng,Qing Sun,Zizhao Zhang,Xiangxin Meng,Bo Shen,Bonan Kang,S. Ravi P. Silva,Geyu Lu
After perovskite became a star material, research on perovskite solar cells (PSCs) became a hot topic and developed rapidly. Electron transport layers (ETLs) with high mobility, low-defect state, and suitable energy level arrangement dominate the development of planar heterojunction PSCs. In this work, the K + and Cs + doped composite SnO 2 ETL ( x mg KC-SnO 2 ) by a continuous spin-coating of the x mg Cs + @KOH and SnO 2 aqueous solution shows a substantial improvement in carries extraction, transport and collection properties, leading to the increased fill factor (FF) from 72.48% to 81.00% of the planar heterojunction PSCs, and finally the champion device average efficiency is 21.62%. Moreover, this work improves the interface contacts between ETL/Perovskite, as it reduces energy disorder and simultaneously promotes electron transport, charge extraction at the interface, improve energy level alignment and quasi-Fermi level splitting, and decreased resistance for charge transfer in the device. In conclusion, this simple and effective method of improving the FF value provides a certain shortcut to the performance of plane heterogeneous perovskite devices.
研究领域:
材料科学
·
能源技术
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2024
·Vol. 12
·期 18
·6628-6636
·
IF 5.7
Yuhao Song,Bingjie Xu,Yingying Deng,Miaosen Yao,Junjie Tong,Qichao Wang,Wanlong Wang,Gentian Yue,Weifeng Zhang,Chen Dong,Furui Tan
Low-cost and stable carbon-based perovskite solar cells (C-PSCs) have been regarded as the most promising device architecture for PSC commercialization. However, due to the large interfacial resistance and energy-level mismatch between the carbon-electrode and perovskite, C-PSCs have suffered from a low fill factor (FF) and an open-circuit voltage (Voc) deficit, limiting their efficiency. Here, a low-temperature, solution-processed P3HT/NiOx organic/inorganic hybrid bilayer, where both elements are doped with graphene (G), is developed as hole-transporting layers (HTLs) for C-PSCs. The optimal G-P3HT/G-NiOx bilayer HTLs not only provide well-matched cascade band alignments that facilitate the charge separation and extraction, and reduce the recombination loss at the perovskite/carbon-electrode interface, but their G co-dopants also build carrier highways within the NiOx and P3HT matrix, accelerating the charge transport and thus reducing FF loss. As a result, a Voc improvement of 100 mV, an FF of up to 79.2%, and a best power conversion efficiency (PCE) of 19.1% for the C-PSCs are achieved. More importantly, the unencapsulated devices with G-P3HT/G-NiOx bilayer HTLs retain 88% of their initial PCE in ambient air for 2500 h; and 91% upon continuous heating at 85 °C for 637 h; and 77% after operation at the maximum power point for over 12000 min. This work provides valuable knowledge for designing bilayer HTLs for highly efficient and stable C-PSCs.
研究领域:
材料科学
·
能源技术
·
光伏器件
✓ 已验证
产品关联
DOI
高影响因子
Small
·
2023
·Vol. 20
·期 7
·2306513
·
IF 13.3
Renbo Lei,Yupu Tang,Shihan Yan,Weitao Qiu,Zheng Guo,Xu Tian,Qian Wang,Kai Zhang,Shanshan Ju,Shihe Yang,Xinwei Wang
With the rapid development of performance and long-term stability, bismuth vanadate (BiVO 4 ) has emerged as the preferred photoanode in photoelectrochemical tandem devices. Although state-of-the-art BiVO 4 photoanodes realize a saturated photocurrent density approaching the theoretical maximum, the fill factor (FF) is still inferior, pulling down the half-cell applied bias photon-to-current efficiency (HC-ABPE). Among the major fundamental limitations are the Fermi level pinning and sluggish surface kinetics at the low applied potentials. This work demonstrates that the plasma-assisted atomic layer deposition technique is capable of addressing these issues by seamlessly installing an angstrom-scale FeNi-layer between BiVO 4 and electrolyte. Not only this ultrathin FeNi layer serves as an efficient OER cocatalyst, more importantly, it also effectively passivates the surface states of BiVO 4 , de-pins the surface Fermi level, and enlarges the built-in voltage, allowing the photoanode to make optimal use of the photogenerated holes for achieving high FF up to 44% and HC-ABPE to 2.2%. This study offers a new approach for enhancing the FF of photoanodes and provides guidelines for designing efficient unassisted solar fuel devices.
研究领域:
材料科学
·
光电化学
✓ 已验证
DOI
高影响因子
GREEN CHEMISTRY
·
2021
·Vol. 23
·期 10
·3633-3641
·
IF 10.182
Yuying Cui,Shurong Wang,Chengbo Li,Aili Wang,Jing Ren,Chenguang Yang,Bin Chen,Zhen Wang,Feng Hao
Antisolvent assisted crystallization has been most widely applied in depositing high-quality perovskite thin films for efficient perovskite solar cells (PSCs). However, the toxicity of common antisolvents (chlorobenzene, toluene etc.) involved in perovskite processing raises serious environmental and health concerns for large-scale implementation. Herein, a green co-antisolvent of propyl acetate is induced to adjust the degree of supersaturation in diethyl ether, enabling pinhole-free, smooth, and uniform perovskite thin films. By carefully controlling the polarity of the antisolvents, the deposited perovskite film showed higher electron mobility and suppressed defect density than that of the control film. As a result, a high power conversion efficiency up to 20.61% was achieved in a p–i–n inverted MAPbI3 PSC with an impressive fill factor (FF) over 84%. The high FF is mainly attributed to the attenuated ideal factor and improved diode junction quality. This approach provides a greener path to the sustainability and scalability of the emerging PSC technology.
研究领域:
材料科学
·
能源技术
·
环境科学
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2017
·Vol. 29
·期 5
·3640-3647
·
IF 2.019
Guo Jingdong,Ma Weibing,Ma Minjie,Zhao Huaidang,Yang Yixuan,Gao Jifeng
Microwave dielectric properties and microstructures of ultra-low loss Li 2 Mg 3 TiO 6 ceramic prepared by reaction-sintering method (RS) and conventional solid-state reaction method (CS) have been investigated. The XRD patterns and SEM images revealed that the single phase of Li 2 Mg 3 TiO 6 and uniform morphology are obtained by both RS and CS methods at the optimal sintering temperatures. In order to further investigate the effects of different sintering methods on the microwave dielectric properties of Li 2 Mg 3 TiO 6 ceramics, the oxide polarizabilities and packing fraction were calculated based on the Rietveld refinement. The calculation results revealed that the RS method was more beneficial to the microwave dielectric properties of Li 2 Mg 3 TiO 6 ceramics in comparison with CS method. Excellent microwave dielectric properties for Li 2 Mg 3 TiO 6 ceramics with enhanced Q × f value of 157,036 GHz could be obtained using RS method sintered at 1250 °C for 6 h.
研究领域:
材料科学
·
陶瓷工程
✓ 已验证
DOI
高影响因子
CHEMICAL ENGINEERING JOURNAL
·
2023
·
IF 15.1
Junjie Fu,Afei Zhang,Dongxing Kou,Zewen Xiao,Wenhui Zhou,Zhengji Zhou,Shengjie Yuan,Yafang Qi,Zhi Zheng,Sixin Wu
One important issue limiting the development of Cu 2 ZnSn(S,Se) 4 (CZTSSe) solar cells is the severe recombination loss at CZTSSe/Mo(S,Se) 2 /Mo back contact, primarily arising from the non-matched potential barrier and inferior electric contact between absorber and weak n -type Mo(S,Se) 2 interfacial layer. It is expected that a p-type Mo(S,Se) 2 can effectively improve the hole extraction and enhance the device performance. In this work, we propose a plausible direction to build up an electrically benign back surface field by in-situ doping Mo(S,Se) 2 with group VB elements (TM = V, Nb and Ta). It is turned out that the generated V Mo , Nb Mo , or Ta Mo shallow acceptors could convert Mo(S,Se) 2 from weak n -type to p-type conductivity and increase its work function ( W F ) and hole concentration. With the contact of p-type absorber ( W F,absorber < W F,Mo(S,Se)₂ ), a benign ohmic contact with favorable downward band bending is formed, thereby accelerating the holes extraction and minimizing interface recombination loss. With significant gains in open-circuit voltage ( V oc ) and fill factor (FF), the Mo(S,Se) 2 :Ta device finally increases the efficiency from 10.82 % to 12.72 %. This convenient in-situ Mo(S,Se) 2 doping strategy is different from previous complicated or unstable cases and should serve as a basis for high-quality back contact engineering in kesterite photovoltaics.
研究领域:
材料科学
·
光伏技术
·
半导体物理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）