Journal of Materials Chemistry A
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2015
·Vol. 3
·期 9
·4903-4908
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IF 7.443
Jianjiang Li,Jingjiao Zhang,Liang Fang,Junling Wang,Mingrong Shen,Xiaodong Su
TiO2 thin films were grown on solar-grade (SoG) multicrystalline silicon (mc-Si) wafers with different multiscale structures by using a liquid phase deposition (LPD) method. It was found that due to the carrier injection from mc-Si wafers, the photocatalytic activity of the TiO2 films could be expanded from the ultraviolet to the visible light region. In addition, further enhanced visible light photocatalytic properties could be achieved by introducing a nano-texture and p–n junction into the mc-Si wafer, which was ascribed to the excellent light trapping and strong carrier separating properties. Our results suggest that density-graded nanostructures applied to the TiO2 photocatalyst can enhance optical absorption, benefit carrier separation, and improve photocatalytic activity.
研究领域:
材料科学
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太阳能技术
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光催化研究
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产品关联
DOI
高影响因子
SEPARATION AND PURIFICATION TECHNOLOGY
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2024
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IF 8.1
Ze Luo,Qingxin Liang,Yuanshuai Qi,Guoqiang Huang
There is an urgent need for efficient and cost-effective adsorbents for the removal of trace hydrogen phosphide (PH 3 ) from the circular hydrogen systems in the polysilicon chemical vapor deposition furnaces. In this study, a straightforward and cost-effective method was used to synthesize a highly efficient adsorbent (Ce x -Cu y /TiO 2 ) for PH 3 removal using TiO 2 as the carrier and CuO as the active substance. Experimental findings demonstrated that optimal Ce doping amounts (n Cu :n Ce = 20:1) markedly enhanced the adsorbent's performance, with an adsorption capacity reaching as high as 149.14 mg g −1 . Material characterization results indicated that Ce positively influenced the uniform dispersion of Cu on the TiO 2 surface, and Ce doping increased the adsorbed oxygen content of the adsorbent, consequently enhancing its oxidation performance. The investigation of the reaction mechanism and causes of adsorbent deactivation revealed that the depletion of active substances (CuO) in the adsorbent and the accumulation of products such as Cu 3 P and phosphates are the primary factors contributing to its deactivation. Furthermore, high-temperature calcination could restore the activity of the adsorbent, indicating its great potential for engineering applications.
研究领域:
化学工程
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材料科学
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环境科学
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DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
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2019
·Vol. 31
·期 2
·1461-1471
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IF 2.195
Zhou Bo,Cui Chunting,Ma Shenghua,Bai Jintao,Wang Hui
A novel Ag-doped glass frit is prepared by the sol-gel method. Nitrogen adsorption-desorption isotherms indicate that the frit has a large BET surface area and a small particle size which promotes front contact metallization. When the glass frit is used for the front contact electrode of polycrystalline silicon solar cells (pc-Si solar cells), it exhibits excellent wettability and etching results on the SiN x layer and the Si substrate. The pc-Si solar cells with the as-prepared frit has a better photoelectric conversion efficiency (18.2%) and is 0.8% higher than the solar cells using the conventional frit, which is due to the frit will produce a lot of Ag nanocrystals at the interface of the glass layer, promoting the formation of excellent ohmic contact between the Ag electrode and n-Si layer, and reducing the contact resistance of solar cells.
研究领域:
材料科学
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可再生能源
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DOI
高影响因子
RSC Advances
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2024
·Vol. 14
·期 6
·4230-4243
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IF 3.9
Qianyi Zhao,Qiang Geng,Guoqiang Huang
Polysilicon is widely used in the field of semiconductors and solar energy. Trichlorosilane feedstocks that are used to produce polysilicon in the mainstream production process contain PCl3 impurities that have adverse effects on the quality of the polysilicon. Traditional methods for dephosphorization cannot achieve the effect of complete removal, whereas oxidizing PCl3 to POCl3 in the presence of oxygen for removal via adsorption is a promising and appealing route for establishing a dephosphorization process; it has a high phosphorous removal rate due to the strong Lewis-base property of POCl3 in comparison with PCl3. In this work, we synthesized an active catalyst with an active interface between Au nanoparticles (NPs) and a manganese-oxide support (Mn3O4) by calcination of a corresponding composite, where Au NPs were embedded uniformly in a metal–organic framework (MOF). The catalyst shows a significantly active catalytic performance for trace PCl3 oxidation in an organic system that is an imitation of a trichlorosilane system, with a 99.13% yield of POCl3 in an 80 °C and 0.6 MPa reaction environment. The structure–performance–mechanism analysis shows that the possible reaction and catalytic mechanism is PCl3 oxidation by interface lattice oxygens, which bridge the Au NPs and the support, in a Mars van Krevelen (MvK) process; this process was promoted by the interaction between the Au NPs and Mn3O4 in terms of charge transfer and chemical potential changes. This work provides an effective way to dephosphorize trichlorosilane feedstocks in the polysilicon industry and gives guidance for constructing an efficient catalyst via the study of the structure and mechanism.
研究领域:
化学工程
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材料科学
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催化
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半导体材料
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产品关联
DOI
PubMed
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
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2025
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IF 4.6
Yongkang Guo,Yanchao Ge,Shenao Nie,Yuxuan Qiu,Xin Wang,Yangang He
Polysilicon (Poly-Si) is crucial for gate electrodes and interconnects in integrated circuits. Surface uniformity after Chemical Mechanical Polishing (CMP) critically impacts device performance, especially with stringent photolithography requirements at scaled dimensions. Optimizing slurry formulation enhances uniformity, but the synergy between polymer (e.g., Polyvinyl Alcohol, PVA) and nonionic surfactant (e.g., Fatty Methyl Ester Ethoxylates, FMEE) and its effect on Poly-Si CMP uniformity remain unclear. This study introduced PVA and FMEE into an alkaline slurry. Post-CMP uniformity (Site Front Quotient Range, SFQR; Within-wafer Nonuniformity, WIWNU) and roughness (Local Root Mean Square Roughness, Sq) were evaluated using wafer geometry testing and Atomic Force Microscopy (AFM). Adsorption behavior and polishing effects were investigated via X-ray Photoelectron Spectroscopy (XPS), Attenuated Total Reflection Fourier Transform Infrared spectroscopy (ATR-FTIR), Molecular Dynamics (MD) simulation, and friction testing. Compared to control (Blank), PVA/FMEE slurry significantly improved uniformity: SFQR reduced by 0.05 μm, edge WIWNU decreased to 2.97 %, and Sq optimized to 0.55 nm. PVA and FMEE synergistically form a dense composite adsorption layer via hydrogen bonding, selectively modulating local removal rates through lubrication and interfacial protection. Synergizing with enhanced abrasive dispersion stability, this mechanism improves Poly-Si CMP surface uniformity. The findings provide insights for developing high-precision Poly-Si CMP slurries.
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高影响因子
Journal of Environmental Chemical Engineering
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2025
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IF 7.2
Jianfang Yang,Xiaoyun Hu,Tianshi Zhang,Juhui Liu,Haonan Zhang,Xiaoyang Liang,Qingqing Guan
Filtration is a pivotal industrial technology that enables the efficient separation and purification of multiphase systems while optimizing resource utilization, improving operational efficiency, and addressing environmental sustainability challenges. However, developing filtration systems that deliver high clarity and rapid filtration rates, while resisting surface cracks in multiphase unstable polysilicon slurry remains a significant challenge. In this work, a cellulose-modified diatomite-based dipole-interaction-enhanced (CE@D-IE) strategy, characterized by its straightforward yet highly effective, was proposed as a solution to the issue. The CE@D-IE filtration system prevented filter cake from surface cracking at 10-40 °C, attributed to diatomite's capillary resistance, cellulose-enhanced dipole interactions, and chain entanglement. Atomic force microscopy (AFM) and molecular dynamics (MD) simulations further revealed stronger interaction within the filter cake formed by the CE@D-IE strategy, providing critical molecular-level evidence for its improved resistance to surface cracking. Furthermore, the CE@D-IE strategy achieved excellent filtrate clarity and demonstrated a 50% improvement in filtration rate compared to the BF strategy, resulting in a comprehensive enhancement of polysilicon slurry filtration performance . This work provides a viable and practical solution to address filtration challenges in polysilicon slurry under complex and dynamic conditions, while also demonstrating significant potential to enhance filtration performance in other complex systems.
研究领域:
化学工程
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材料科学
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环境工程
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纳米技术
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分离技术
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产品关联
DOI
高影响因子
Surfaces and Interfaces
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2024
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IF 5.7
Zihan Zhou,Yunwen Wu,Silin Han,Tao Hang,Huiqin Ling,Jie Guo,Su Wang,Ming Li
3D NAND is one of the most promising storage devices due to its high storage density and low energy consumption. Selective wet etching of Si 3 N 4 by hot-concentrated phosphoric acid (PA) solution is a key process for 3D NAND fabrication. However, the channel material, polycrystalline silicon (poly-Si), is unexpectedly dissolved due to its inevitable exposure to the PA etching solution, which causes device failure and thus limits the stacking density of 3D NAND. Herein, to avoid the detrimental dissolution of poly-Si, we unveil the mechanism of poly-Si dissolution in PA solution from kinetic and thermodynamic perspectives. We find that the etch process shows a two-stage reaction, in which H 2 O plays a key role in lowering the activation barrier for poly-Si etching. Further thermodynamic analysis demonstrates that poly-Si prefers to be oxidized by H 2 O to suboxide rather than to SiO 2 . Combined with surface chemistry characterization, we propose the dissolution mechanism as a two-stage process involving the dissolution of suboxide interface and bulk poly-Si, where the nucleophilic substitution of Si–H with Si–OH on bulk poly-Si surface determines the overall etch rate. This study advances the 3D NAND development by establishing a theoretical foundation for identifying and implementing efficacious strategies to impede detrimental dissolution.
研究领域:
半导体器件
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材料科学
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纳米技术
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化学工程
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DOI
高影响因子