Natural biomaterials applicable for biomemristors have drawn prominent attention and are of benefit to sustainability, biodegradability, biocompatibility, and metabolism. In this work, multi-bit biomemristors based on the neutral polysaccharide dextran were built using the spin-casting method, which was also employed to explore the effect of dextran on the ternary biomemristic behaviors of dextran–chitosan nanocomposites. The doping of 50 wt% dextran onto the bio-nanocomposite optimized the ratio of biomemristance in high-, intermediate-, and low-resistance states (105:104:1). The interaction between dextran and chitosan (hydrogen-bond network) was verified by Fourier transform infrared (FTIR) and Raman spectroscopy analysis; through this interaction, protons derived from the self-dissociation of water may migrate under the electric field, and so proton conduction may be the reason for the ternary biomemristic behaviors. Observations from X-ray diffraction (XRD), thermogravimetric analysis (TGA), and differential scanning calorimetry (DSC) analysis displayed that the 50 wt% dextran/50 wt% chitosan nanocomposite had the greatest amorphous ratio as well as the highest decomposition and peak transition temperatures in comparison with the other three dextran–chitosan nanocomposites. This work lays the foundation for neutral biomaterials applied to green ultra-high-density data-storage systems.
Chitosan (CS) is one of the commonly affluent polysaccharides that are attractive biomaterials as they are easily found in different organisms and are biocompatible. An environment-friendly multi-bit biomemory was successfully achieved on the basis of CS as a favorable candidate for resistive-switching memory applications. By incorporating graphene oxide (GO) into CS, the multi-bit biomemory device (indium tin oxide (ITO)/CS:GO/Ni) was obtained through the solution-processable method, which had a high current ratio among a high, intermediate, and low resistance state as well as a low SET/RESET voltage. GO acting as trapping sites in the active layer might be responsible for the biomemory mechanism. This research opens up a new avenue towards renewable and environmentally benign CS-based materials for biodegradable electronic devices.
2D ferromagnetic chromium tellurides exhibit intriguing spin configurations and high-temperature intrinsic ferromagnetism, providing unprecedented opportunities to explore the fundamental spin physics and build spintronic devices. Here, a generic van der Waals epitaxial approach is developed to synthesize the 2D ternary chromium tellurium compounds with thicknesses down to mono-, bi-, tri-, and few-unit cells (UC). The Mn 0.14 Cr 0.86 Te evolves from intrinsic ferromagnetic behavior in bi-UC, tri-UC, and few-UC to temperature-induced ferrimagnetic behavior as the thickness increases, resulting in a sign reversal of the anomalous Hall resistance. Temperature- and thickness-tunable labyrinthine-domain ferromagnetic behaviors are derived from the dipolar interactions in Fe 0.26 Cr 0.74 Te and Co 0.40 Cr 0.60 Te. Furthermore, the dipolar-interaction-induced stripe domain and field-induced domain wall (DW) motion velocity are studied, and multibit data storage is realized through an abundant DW state. The magnetic storage can function in neuromorphic computing tasks, and the pattern recognition accuracy can reach up to 97.93%, which is similar to the recognition accuracy of ideal software-based training (98.28%). Room-temperature ferromagnetic chromium tellurium compounds with intriguing spin configurations can significantly promote the exploration of the processing, sensing, and storage based on 2D magnetic systems.
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