RSC Advances
·
2020
·Vol. 10
·期 70
·43225-43232
·
IF 3.119
Risheng Jin,Jin Wang,Keli Shi,Beibei Qiu,Lanchao Ma,Shihua Huang,Zhengquan Li
Inorganic halide perovskite quantum dots (IHP QDs) have been widely studied in optoelectronic devices because of their size-dependent tunable bandgaps, long electron–hole diffusion lengths and excellent absorption properties. Herein, a novel floating-gate organic field-effect transistor memory (FGOFETM) is demonstrated, comprising a floating-gate of IHP QDs embedded in a polystyrene matrix. Notably, the FGOFETM exhibits photoinduced-reset characteristic that allows data removal by photo irradiation. This feature makes low energy-consuming memory and innovative devices possible. The nonvolatile devices also show a large memory window (≈90 V), ultrahigh memory on/off ratio (over 107) and therefore excellent multilevel information storage, in which 4 recognizable non-volatile states and long retention time (up to 10 years) are obtained. This work not only offers an effective guideline of high-performance FGOFETMs, but also shows great potential to realize multilevel data storage under electrical programming and photoinduced-reset processes.
研究领域:
材料科学
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电子工程
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纳米技术
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产品关联
DOI
PubMed
高影响因子
MACROMOLECULAR CHEMISTRY AND PHYSICS
·
2022
·Vol. 223
·期 17
·2200104
·
IF 2.996
Feng Dou,Xiaofeng Zhao,Meng Gao,Zhaohua He,Shuao Wang,Hanzhou Liu,Shuhong Wang,Cheng Wang
Multi-level memory can greatly improve information density, so it has been widely studied. In this study, a carbazole-based donor–acceptor polymer poly[2,7-9-(heptadecan-9-yl)-9 H -carbazole- alt -7 H -benzimidazo[2,1- a ]benz[ de ]isoquinolin-7-one] (PCz-BB) is synthesized, which exhibits flash-type ternary memory behavior. Further, CdS nanoparticles (NPs) are embedded into the prepared polymer to enhance the storage performance. The current–voltage ( I – V ) characteristics of memory devices based on PCz-BB:CdS composites and the effect of the embedding ratio of CdS NPs on the memory devices are studied. It is verified that the ON2/ON1/OFF current ratios of the devices at low CdS embedding concentrations are improved, and the threshold voltages are also reduced. The memory device based on the optimal embedding concentration (3 wt% CdS) exhibits a high ON2/ON1/OFF current ratio of 18631:72:1, a low threshold voltage of −0.40/−1.20 V, and excellent stability. The mechanism of resistive switching is explained by the theory of charge traps and conductive filaments. This work provides a new avenue for high-performance multi-level organic electrical storage materials.
研究领域:
材料科学
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电子工程
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产品关联
DOI
高影响因子
MATERIALS CHEMISTRY AND PHYSICS
·
2022
·
IF 4.778
Zehan Liu,Pengpeng Cheng,Yongfei Li,Ruyan Kang,Jian Zhou,Jia Zhao,Zhiyuan Zuo
With the aim of addressing the growing challenge of approaching the end of Moore's law and von Neumann bottleneck, the evolution of neuromorphic computing based on memristors that emulate the behaviors of the brain has attracted great attention. Organic-inorganic hybrid lead halide perovskites with inherent hybrid ionic-electronic conduction ability have been proposed as promising candidates for memristors to replace traditional charge-based memory. Here we propose MA 0.85 Cs 0.15 PbI 3 memristors with high surface crystallinity and stable operation in the atmospheric environment by mixing inorganic cation Cs + and organic cation MA + . The prepared memristors present excellent resistive switching performances including low operation voltage, high ON/OFF ratio, stable endurance, long retention, and robustness under ambient condition. Besides that, four distinct resistance states have been obtained in the above devices by modifying the operation voltages. Moreover, the resistance switching processes can be controlled both by electrical field and light illumination. Finally, this research provides utilization potentiality in the optical and electrical two-dimension controlled multilevel information devices with a total of five stable resistance states. The present work would offer an effective way to develop multifunctional high-density data-storage applications by storing multiple resistance states in a single unit cell.
研究领域:
材料科学
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纳米电子学
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凝聚态物理
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信息存储技术
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类脑计算
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DOI
高影响因子
Materials Today Chemistry
·
2022
·
IF 7.613
P.K. Zhou,K.Y. Song,L.L. Zong,Z.C. Yang,H.H. Li,Z.R. Chen
The design of functional composites with desired film crystallinity and definite switching mechanism is the key to achieve high performance multilevel memorizers. Three aggregation-induced emission (AIE) molecules containing different azobenzol (Azo) groups on tetraphenylethylene (TPE) were synthesized and embedded into polybenzimidazole (PBI) to prepare AIE@PBI composites, which were further fabricated as FTO/TPE-Azo-n@PBI/Ag (n = 01, 02, 04) devices with well-defined crystalline characteristics. These devices can demonstrate clear ternary memory performances, among which TPE-Azo-04@PBI-based one exhibited the best performance with the current ratio of 1:10 4.2 :10 6.7 for “OFF”, “ON1”, and “ON2” states. The ternary memory mechanism can be designed as the combination of aggregation-induced current/conductance (AIC) and packing conformational change-induced charge transfer in TPE-Azo-n, which were verified by UV–Vis, in-situ XRD , and single-crystal structural determinations and theoretical calculations. The trend of ternary memory performance improved by increasing Azo groups on TPE can be attributed to the larger steric hindrance due to the more Azo groups, which can inhibit their aggregations and packing conformational change in PBI-confined space. Specially, this kind of devices can present high-temperature tolerance of 350 ° C. The verified mechanism in this work might provide a practicable model for the design of new high-density memorizers with good environmental tolerance. The current ratio of OFF/ON1/ON2 increases with the Azo.
研究领域:
材料科学
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光电功能材料
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产品关联
DOI
高影响因子
NEW JOURNAL OF CHEMISTRY
·
2021
·Vol. 46
·期 2
·704-713
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IF 3.591
Feng Dou,Xiaofeng Zhao,Wanying Zhang,Yingna Zhang,Meng Gao,Jiangshan Chen,Shuhong Wang,Cheng Wang
The limited capacity of binary memory may not meet the requirements of future information storage; hence, multilevel memory is widely studied. Herein, a donor–acceptor-type polymer poly[2,7-9-(heptadecan-9-yl)-9H-carbazole-alt-7H-benzimidazo[2,1-a]benz[de]isoquinolin-7-one] (PCz–BMBI) was synthesized using the Suzuki cross-coupling reaction and characterized. The organic resistive random access memory (ORRAM) devices with a non-volatile ternary memory behavior, based on PCz–BMBI and PCz–BMBI:CuO NP active layers, were fabricated using the spin-coating technique. The I–V characteristics of the devices were studied, and the effect of the embedding ratio of CuO nanoparticles (NPs) on the memory performance of the devices was discussed. The results indicate that the switching ratios of all devices with CuO NPs embedded were improved, and their first threshold voltages were lowered. Furthermore, the devices fabricated with an embedding ratio of 7 wt% CuO NPs exhibited optimal memory performance with a current ratio of ON2/ON1/OFF (105.3 : 102.3 : 1) and low threshold voltages (−0.50 V/−1.60 V). This work provides a new route for multi-level storage materials and new ideas for the application of CuO NPs in the field of information storage.
研究领域:
材料科学
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信息存储技术
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有机电子学
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产品关联
DOI
高影响因子
JOURNAL OF ELECTRONIC MATERIALS
·
2023
·Vol. 52
·期 4
·2794-2806
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IF 2.1
Li Shengnan,Meng Haoyan,Fan Wentao,Shen Junqing,Xu Shengang,Liu Yingliang,Cao Shaokui
Abstract Woven resistive random access memory (RRAM) is a promising subject in flexible wearable electronic devices. In this work, polyvinylammonium iodate (PVAm·HI) is added to the FAPbI 3 perovskite precursor solution to fabricate a flexible fibrous woven RRAM array by improving the flexibility and stability of FAPbI 3 perovskite. The long carbochain polymer backbone of PVAm serves as nucleation sites and a growth template to improve the perovskite crystallization process, and to in situ crosslink the perovskite grains at the crystal interface. The functional Al@FAPbI 3 :PVAm fibers are then prepared by solution dip-coating to assemble the fibrous crosspoint RRAM device with the structure of Al@FAPbI 3 :PVAm/Al by crossing bare aluminum (Al) fibers with functional fibers. Compared to a pristine device, the PVAm-modified devices exhibit a considerable improvement in the ON/OFF ratio and environmental stability. Specifically, the 2% PVAm-modified FAPbI 3 RRAM devices show an evident bipolar resistive switching (RS) behavior with a high ON/OFF ratio of 10 9 , which can easily achieve multilevel storage by setting the compliance current ( I cc ) to increase the storage density in the crosspoint array. Interestingly, a 100-times bent plastics-encapsulated device still exhibits a good RS behavior. This work provides a facile approach to achieve high-density storage in flexible wearable electronic devices.
Graphical Abstract
研究领域:
材料科学
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电子工程
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产品关联
DOI
高影响因子
NANOTECHNOLOGY
·
2021
·Vol. 33
·期 2
·025201
·
IF 3.874
Risheng Jin,Keli Shi,Beibei Qiu,Shihua Huang
Recently, antimony-doped tin oxide nanoparticles (ATO NPs) have been widely used in the fields of electronics, photonics, photovoltaics, sensing, and other fields because of their good conductivity, easy synthesis, excellent chemical stability, high mechanical strength, good dispersion and low cost. Herein, for the first time, a novel nonvolatile transistor memory device is fabricated using ATO NPs as charge trapping sites to enhance the memory performance. The resulting organic nano-floating gate memory (NFGM) device exhibits outstanding memory properties, including tremendous memory window (∼85 V), superhigh memory on/off ratio (∼109), long data retention (over 10 years) and eminent multilevel storage behavior, which are among the optimal performances in NFGM devices based on organic field effect transistors. Additionally, the device displays photoinduced-reset characteristic with low energy consumption erasing operation. This study provides novel avenues for the manufacture of simple and low-cost data storage devices with outstanding memory performance, multilevel storage behavior and suitability as platforms for integrated circuits.
研究领域:
电子材料
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纳米技术
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存储器件
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Luhang Xu,Yuang Fu,Yuhao Li,Guodong Zhou,Xinhui Lu
The migration of mobile ionic halide vacancies is usually considered detrimental to the performance and stability of perovskite optoelectronic devices. Taking advantage of this intrinsic feature, we fabricated a CsPbI3 perovskite quantum dot (PQD)-based write-once-read-many-times (WORM) memory device with a simple sandwich structure that demonstrates intrinsic ternary states with a high ON/OFF ratio of 103:102:1 and a long retention time of 104 s. Through electrochemical impedance spectroscopy, we proved that the resistive switching is achieved by the migration of mobile iodine vacancies (VIs) under an electric field to form conductive filaments (CFs). Using in situ conductive atomic force microscopy, we further revealed that the multilevel property arises from the different activation energies for VIs to migrate at grain boundaries and grain interiors, resulting in two distinct pathways for CFs to grow. Our work highlights the potential of CsPbI3 PQD-based WORM devices, showcasing intrinsic multilevel properties achieved in a simple device structure by rationally controlling the drift of ionic defects.
研究领域:
材料科学
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电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
·
2023
·Vol. 220
·期 23
·2300612
·
IF 2
Yuanyuan Zhu,Mengyao Chen,Lixin Wang,Hong Wei,Jing Zhou,Changwei Zou,Yong Liu,Rui Xiong,Hongjun Wang
2D organic–inorganic layered halide perovskites have received tremendous interest as promising materials in electronics owing to their outstanding physical properties. However, the quantum confinement effect leads to the suppression of ion migration in the out-of-plane direction, restricting their applications in resistive switching (RS) memories with vertical structure. Herein, the 2D layered perovskite incorporated with TiO 2 nanoparticles, denoted as TiO 2 –PEA 2 PbBr 4 , is employed, as the functional layers to construct RS memory devices with Al/TiO 2 –PEA 2 PbBr 4 /ITO structure. As compared to pure 2D layered perovskite counterparts without switching behaviors, the Al/TiO 2 –PEA 2 PbBr 4 /ITO memories demonstrate stable bipolar RS behaviors, along with striking characteristics, including the relatively centralized set/reset voltages, a large on/off ratio (≈10 2 ), and a long retention time (10 4 s). In addition, the devices also present the multilevel storage capability by controlling the compliance current. Moreover, the RS behaviors are attributable to the formation/rupture of synergy bromine and oxygen vacancy conductive filaments, owing to their migration/distribution of oxygen/bromine ions under electric fields. The oxide nanoparticles incorporation route provides an effective strategy for improving RS performance in 2D layered perovskite-based RS memories.
研究领域:
材料科学
·
电子工程
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产品关联
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY
·
2022
·
IF 10.319
Qi Xue,Tao Hang,Jianghu Liang,Chun-Chao Chen,Yunwen Wu,Huiqin Ling,Ming Li
Memristors have been seen as promising candidates for next-generation nonvolatile memory and neuromorphic computing . Solution-processed memristors can offer many advantages, such as low-cost fabrication, large-area uniformity, and high versatility. However, the high annealing temperature of the solution process and unsatisfactory performance are impeding the advancement of flexible memristors. In this work, the combustion method was proposed to fabricate the Mn-ZnO-based memristor without a high-temperature process on the flexible substrate. The device demonstrates stable bipolar resistive switching behavior with ultralow switching voltage (−0.6 V/0.71 V), high on/off ratio (˃ 2 × 10 3 ), multilevel storage capability, and uniform resistance distribution ( σ / µ = 18%/16%). The flexible device with a bend radius of 10 mm shows no obvious performance degeneration compared with the device in the flat state. Furthermore, tunable repetitively synaptic weight was achieved by the memristor. Synaptic plasticity functions, such as excitatory postsynaptic current, paired-pulse facilitation, and learning/forgetting behaviors, have been emulated. This work provides a simple and feasible strategy for fabricating the flexible high-performance memristor, with the expectation to facilitate the development of flexible electronics.
研究领域:
材料科学
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纳米科技
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电子工程
·
神经形态计算
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柔性电子学
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固态物理
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功能材料
✓ 已验证
DOI
高影响因子
Nanomaterials
·
2022
·Vol. 13
·期 1
·39
·
IF 5.719
Yuan-Dong Xu,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Zhenhua Tang,Wen-Hua Li,Xiao-Bin Guo,Yi-Chun Zhou
Resistive random-access memory (RRAM) is a promising candidate for next-generation non-volatile memory. However, due to the random formation and rupture of conductive filaments, RRMS still has disadvantages, such as small storage windows and poor stability. Therefore, the performance of RRAM can be improved by optimizing the formation and rupture of conductive filaments. In this study, a hafnium oxide-/aluminum-doped zinc oxide/hafnium oxide (HfO2/Al-ZnO/HfO2) tri-layer structure device was prepared using the sol–gel method. The oxygen-rich vacancy Al-ZnO layer was inserted into the HfO2layers. The device had excellent RS properties, such as an excellent switch ratio of 104, retention of 104s, and multi-level storage capability of six resistance states (one low-resistance state and five high-resistance states) and four resistance states (three low-resistance states and one high-resistance state) which were obtained by controlling stop voltage and compliance current, respectively. Mechanism analysis revealed that the device is dominated by ohmic conduction and space-charge-limited current (SCLC). We believe that the oxygen-rich vacancy concentration of the Al-ZnO insertion layer can improve the formation and rupture behaviors of conductive filaments, thereby enhancing the resistive switching (RS) performance of the device.
研究领域:
材料科学
·
电气工程
·
纳米技术
·
半导体器件
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）