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CRYSTENGCOMM · 2022 ·Vol. 24 ·期 9 ·1789-1794 · IF 3.756

Study on the evolution from α-GaOOH to α-Ga2O3 and solar-blind detection behavior of an α-GaOOH/α-Ga2O3 heterojunction

Yanan Zhang,Shujie Jiao,Junhua Zhang,Shuo Liu,Dongbo Wang,Shiyong Gao,Jinzhong Wang

A GaOOH/Ga2O3 heterojunction was obtained by a one-step annealing treatment at a certain temperature. The solar blind photoresponse performance of the GaOOH/Ga2O3 heterojunction was characterized through photoelectrochemical detectors, providing a simple and effective method for pure solar-blind ultraviolet detection. The results showed that the maximum responsivity of the α-GaOOH/α-Ga2O3 heterojunction detector is 0.29 mA W−1 at 250 nm, which is 370% and 145% higher than that of the α-GaOOH and α-Ga2O3 detectors, respectively. The calculated solar-blind/visible detection ratio and light-to-dark current ratio of the detector are also significantly improved compared with the α-Ga2O3 and α-GaOOH detectors, reflecting better pure solar-blind ultraviolet detection performance. The photoresponse mechanism has been studied systemically.

CAS / MDL: 1310-65-2 7757-82-6
研究领域: 材料科学 · 光电子学
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Nanoscale · 2025 · IF 5.1

Multilevel, solar-blind, and thermostable physical unclonable functions based on host-sensitized luminescence of β-Ga2O3:Dy3+

Dong Zhu,Chunfeng Wang,Fuhang Jiao,Jiujun Xu,Haoran Xu,Shun Han,Peijiang Cao,Yuxiang Zeng,Ming Fang,Wenjun Liu,Deliang Zhu,Youming Lu

Optical physical unclonable functions (PUFs) are powerful tools to combat counterfeiting, owing to their unpredictable preparation processes and unique, identifiable information content. Achieving high entropy and robustness in optical PUFs is essential for practical applications but remains challenging. This study demonstrates a multilevel, solar-blind, and thermostable PUF based on host-sensitized luminescence of trivalent dysprosium (Dy3+) in β-phase gallium oxide (β-Ga2O3). The controllable occupation of Dy3+ in both tetrahedral and octahedral Ga3+ sites of β-Ga2O3 results in heterochromatic optical emission, which affords the resulting PUFs with a multilevel encoding capacity of 44096 at 64 × 64 pixels. The wide bandgap (∼4.6 eV) of β-Ga2O3:Dy3+ confines the PUF response to solar-blind irradiation, encompassing a light spectrum in the range 230–270 nm, which does not overlap with ambient light, ensuring interference-free stimulation and therefore achieving 100% recognition accuracy. Additionally, the high thermal quenching activation energy (0.386 eV) of β-Ga2O3:Dy3+ provides thermal stability, enabling the PUFs to operate from room temperature up to 125 °C. With near-ideal uniformity, uniqueness, and reproducibility, these PUFs hold considerable promise for practical applications in anticounterfeiting and encryption.

研究领域: 材料科学 · 光学工程 · 信息安全
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ACS Applied Materials & Interfaces · 2021 · IF 9.229

Broadening the Spectral Response of Perovskite Photodetector to the Solar-Blind Ultraviolet Region through Phosphor Encapsulation

Xuning Zhang,Xingyue Liu,Bo Sun,Haibo Ye,Chunhua He,Lingxian Kong,Tielin Shi,Guanglan Liao,Zhiyong Liu

Hybrid perovskite photodetectors generally exhibit brilliant performance for photodetecting in the visible spectrum but poor detectability in the solar-blind ultraviolet (UV) region. To break through the bottleneck, we demonstrate a novel strategy to broaden the spectral response of perovskite photodetectors to the solar-blind UV region through phosphor encapsulation. The high photoluminescence quantum yield trichromatic phosphor capping layer achieves an extended spectral response to the solar-blind UV region through effectively down-converting the incident UV light into visible light. In addition, an external quantum efficiency of up to 12.13%@265 nm is achieved without bias voltage, while the initial value is near zero. The corresponding spectral responsivity and detectivity are 0.0269 A/W and 7.52 × 1011 Jones, respectively. Thus, the photodetectors show a high photocurrent and on/off ratio, increasing by roughly 2 orders of magnitude. Moreover, the photodetectors exhibit a large linear dynamic range of 105 dB, fast response times of 50.16/51.99 μs, and excellent stability. The practical applications for flame detection and UV-based communication are further explored. This work provides a new way to achieve UV light detection based on perovskite photodetectors. Perhaps, it may also be a promising alternative for wide-band gap semiconductors to realize the urgent pursuit of UV detection.

CAS / MDL: 67-68-5 68-12-2
研究领域: 材料科学 · 光学工程 · 半导体物理
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Small · 2021 ·Vol. 17 ·期 40 ·2102884 · IF 13.281

Heterogeneous Integration of Chiral Lead–Chloride Perovskite Crystals with Si Wafer for Boosted Circularly Polarized Light Detection in Solar-Blind Ultraviolet Region

Xinyuan Zhang,Wen Weng,Lina Li,Hongchun Wu,Yunpeng Yao,Ziyang Wang,Xitao Liu,Wenxiong Lin,Junhua Luo

Chiral hybrid organic–inorganic perovskites (HOIPs) have been well developed for circularly polarized light (CPL) detection, while new members that target at solar–blind ultraviolet (UV) region remain completely unexplored. Here, an effective design strategy to demonstrate circular polarization-sensitive solar–blind UV photodetection by growing wide-bandgap chiral HOIP [( R )-MPA] 2 PbCl 4 (( R )-MPA = methylphenethylammonium) single crystals onto silicon wafers, with well-defined heterostructures, is reported. The solid mechanical and electrical connection between the chiral HOIP and silicon wafer results in strong built-in electric field at heterojunction, providing a desirable driving force for separating/transporting carriers generated under CPL excitation at 266 nm. Unexpectedly, during such a transport process, not only the chirality of HOIP crystal is transferred to the heterostructure, but also the circular polarization sensitivity is significantly amplified. Consequently, anisotropy factor of the resultant detectors can reach up to 0.4 at zero bias, which is much higher than that of the pristine single-phase chiral HOIP (≈0.1), reaching the highest among the reported CPL–UV photodetectors. As far as we know, the integration of chiral HOIP crystals with silicon technology is unprecedent, which paves a way for designing boosted-performance CPL detectors in solar–blind UV region as well as for other advanced optoelectronic devices.

研究领域: 材料科学 · 光电子学 · 纳米技术
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JOURNAL OF MATERIALS SCIENCE · 2022 ·Vol. 57 ·期 2 ·1186-1197 · IF 4.682

Sol–gel preparation of Sn doped gallium oxide films for application in solar-blind ultraviolet photodetectors

Li Yana,Li Yuqiang,Ji Yi,Wang Hong,Zhong Dingyong

Ga 2 O 3 is considered as a candidate for the preparation of solar-blind photodetectors due to its large direct band gap. Developing low-cost preparation methods of high-quality Ga 2 O 3 films is of importance for large-scale applications. In this work, we investigate the preparation of Sn doped β-Ga 2 O 3 films by using simple and cheap sol–gel method under ambient condition. It is found that Sn doping induces a growth mode transformation from \(\left( {\overline{2}01} \right)\) to \(\left( {\overline{3}11} \right)\) oriented texture on the c-plane sapphire substrates. With an optimal Sn proportion, high-quality β-Ga 2 O 3 films consisting of needle-like grains are observed. Compared with the undoped films, the Sn-doped films with needle-like grains obtained a low dark current of 0.76 nA, performed an on/off ratio as high as ~ 6000, responsivity, R of 164 mA/W and D* of 3.21 × 10 12 Jones at a bias voltage of 30 V in the configuration of metal–semiconductor–metal solar-blind deep ultraviolet detectors. This is the highest on/off ratio of Ga 2 O 3 solar-blind photodetectors fabricated by sol–gel method reported up to now and has the potential to be applied in practical use. Graphical abstract

研究领域: 材料科学 · 半导体物理 · 光电技术
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Small · 2023 ·Vol. 19 ·期 27 ·2300364 · IF 13.3

Large-Scale, Uniform-Patterned CsCu2I3 Films for Flexible Solar-Blind Photodetectors Array with Ultraweak Light Sensing

Qiuchun Lu,Yufei Zhang,Guanlin Yang,Meiling Xiong,Wenqiang Wu,Zhangsheng Xu,Hui Lu,Yegang Liang,Zeping He,Yang Yu,Xiaoming Mo,Xun Han,Caofeng Pan

Cesium copper halide perovskite is one of the promising materials for solar-blind light detection. However, most of the cesium copper halide perovskite-based photodetectors (PDs) are focused on ultraviolet A detection and realized on the rigid substrate in the single device configuration. Here, a flexible solar-blind PDs array (10 × 10 pixels) based on the CsCu 2 I 3 film patterns for ultraweak light sensing and light distribution imaging is reported. Large-scale CsCu 2 I 3 film arrays are synthesized with various shapes and uniform dimensions through a simple vacuum-heating-assisted solution method. Benefiting from excellent air stability and superior resistance to the photodegrading of the CsCu 2 I 3 film, the array device exhibits long-term stable photoswitching behavior for 8 h and ultralow light detection capability to resolve the light intensity of 6.1 nW cm −2 with a high responsivity of 62 A W −1 , and the array device can acquire clear images of “G”, “X”, and “U” showing the input light distribution. Moreover, the flame detection and warning system based on a curved solar-blind PDs array is demonstrated, which can be used for multi-flame monitoring and locating. These results can encourage potential applications of the CsCu 2 I 3 film-based PDs array in the field of optical communication and environment monitoring.

研究领域: 材料科学 · 光电技术 · 光子学 · 环境监测
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CRYSTAL GROWTH & DESIGN · 2025 · IF 3.4

Direct Synthesis of Quasi-Single-Crystal Lithium Niobate Thin Films with High-Quality (006) Crystallinity and Ultrawide Bandgap via the Sol–Gel Method

Ruoling Wu,Caixia Xu,Ke Ding,Jiarong Zhang,Haibin Sun,Long Xu

Herein, high-quality (006)-oriented and ultrawide bandgap near-stoichiometric lithium niobate quasi-single crystal thin films are prepared using the sol–gel method. The optimal growth condition is investigated by changing the drying and annealing temperatures. The (006)-diffraction pattern of the X-ray diffraction spectra implies the high purity phase of the quasi-single crystal thin films. The molar ratio of the Li and Nb elements is analyzed using X-ray photoelectron spectroscopy and inductively coupled plasma mass spectrometry, confirming that the ratios close to 1:1 are measured. The bandgap of the lithium niobate is approximately 4.4 eV using the Tauc-plot fitting of the absorption spectra, and high-performance solar-blind photodetector based on the ultrawide bandgap lithium niobate thin films is studied. This work paves the way for advancing cost-effective optoelectronic devices based on lithium niobate thin films for UV detection technology.

CAS / MDL: 100-51-6
研究领域: 材料科学 · 纳米技术 · 光电子学 · 薄膜技术 · 晶体生长 · 半导体物理
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