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ACS Applied Materials & Interfaces · 2023 · IF 9.5

Atomic/Molecular Layer-Deposited Laminated Li2O–Lithicone Interfaces Enabling High-Performance Silicon Anodes

Jiabin Fang,Jianguo Li,Lijun Qin,Aidong Li,Hao Feng

Silicon-based materials are of long-standing interest as the anodes for next-generation lithium-ion batteries, yet their low initial Coulombic efficiency and poor interfacial stability are lethal limitations. In this work, we used atomic layer deposition (ALD) and molecular layer deposition (MLD) techniques to fabricate a lithium-containing laminated Li2O–lithicone hybrid film (∼5 nm) on a silicon electrode. The laminated film provides an additional surface Li source around silicon cores, which can partially reimburse the Li loss during battery cycling. Characterization of interfacial components shows that such a laminated Li2O–lithicone interface undergoes gentle element changes and participates in a hybrid solid electrolyte interphase with Li2CO3, Li2O, LixPOFy, and LiF species. Finite element model analysis and morphology characterization demonstrate that the laminated structure design can help relieve the interfacial stress and thus retain the integrity and reactivity of the silicon composite anode during cycling. Moreover, the lithium-based laminated film leads to a fast Li+ migration kinetics on the surface of the electrode as revealed by the galvanostatic intermittent titration technique and density functional theory calculation. Benefiting from the above merits, a silicon anode with a 91.2% initial Coulombic efficiency, a rate performance of 1460 mA h g–1 at 2 A g–1, and a reversible capacity over 646 mA h g–1 after 850 cycles was achieved. This work exemplifies the advantages of lithium-based hybrid films precisely engineered by ALD/MLD techniques for improving performances of advanced silicon anode batteries and deepens understandings on the mechanism of interfacial stability and reaction kinetics.

CAS / MDL: 1907-33-1
研究领域: 材料科学 · 电化学 · 能源存储
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MOLECULES · 2025 ·Vol. 30 ·期 6 ·1299 · IF 4.6

ALD-Deposited Hydroxyl-Rich NiOx to Enhance SAM Anchoring for Stable and Efficient Perovskite Solar Cells

Fengming Guo,Xuteng Yu,Yuheng Li,Yong Chen,Chi Li,Chunming Liu,Peng Gao

The interface between nickel oxide (NiOx) and self-assembled monolayers (SAMs) in perovskite solar cells (PSCs) often suffers from limited adsorption strength, poor energy-level alignment, and inadequate defect passivation, which hinder device performance and stability. To address these issues, we introduce a hybrid hole selective layer (HSL) combining atomic layer deposition (ALD)-fabricated NiOxwith full-aromatic SAM molecules, creating a highly stable and efficient interface. ALD NiOx, enriched with hydroxyl groups, provides robust adsorption sites for the SAM molecule MeO-PhPACz, ensuring a strong, stable interaction. This hybrid HSL enhances energy-level alignment, hole selectivity, and defect passivation at the NiOx/perovskite interface. Devices utilizing this approach demonstrate significant performance improvements, achieving a power conversion efficiency (PCE) of 21.74%, with reduced voltage losses and minimal hysteresis. Furthermore, operational stability tests reveal enhanced durability under elevated humidity and temperature conditions. These findings highlight the potential of ALD NiOxand SAM hybrid HSL to overcome existing barriers, advancing the commercial viability of PSC technologies.

CAS / MDL: 74-89-5
研究领域: 材料科学 · 能源技术 · 光伏器件
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ACS Applied Materials & Interfaces · 2025 · IF 8.2

Burst Nucleation in Area-Selective Atomic Layer Deposition

Chun Li,Jiaxun Yao,Jiayi Xu,Huanhuan Yang,Guangfu Luo,Yanhao Yu

Nucleation behavior governs the selectivity of area-selective atomic layer deposition (AS-ALD). Ideally, nontargeted regions should exhibit delayed nucleation or sparse nucleation that can be easily removed by post-treatment. Here, we report a burst nucleation phenomenon during AS-ALD on perfluoroalkyl self-assembled monolayer (SAM)-treated surfaces. Burst nucleation results in discontinuous particle deposition with weak interfacial adhesion on nontargeted regions, in contrast to the progressive nucleation that forms uniform and adherent films on alkyl SAMs. These weakly adhered particles can be completely removed by gentle wiping without affecting the ALD film in targeted areas. The burst window depends on the SAM chain length, the ALD precursor, and the ALD temperature. When applied to Cu/SiO2 substrates, the nucleation control enables 99.9% selectivity after 30 cycles of Al2O3 ALD, while that of alkyl SAMs is 52.2%. The burst nucleation strategy is broadly effective for enhancing the selectivity of AS-ALD oxides (e.g., ZrO2, HfO2, ZnO) and polymers (e.g., polyimide).

研究领域: 材料科学 · 纳米技术 · 薄膜沉积 · 表面化学 · 半导体工艺
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CHEMISTRY OF MATERIALS · 2022 · IF 10.508

Multiple Anion Chemistry for Ionic Layer Thickness Tailoring in Bi2+2nO2+2nSenX2 (X = Cl, Br) van der Waals Semiconductors with Low Thermal Conductivities

Ruiwen Ji,Meng Lei,Cécile Genevois,Wenda Zhang,Xing Ming,Lunhua He,Mathieu Allix,Congling Yin,Xiaojun Kuang,Xianran Xing

Layered materials coupling a two-dimensional strong-bonding layered network with much weaker van der Waals (vdW) interaction between the layers are sought after for the development of nanoelectronics and energy conversion devices. It is important to elucidate the layer stacking rules in these vdW materials and control the thickness of the strong-bonding layers for tuning the nanosheet height during exfoliation and therefore tailor physical properties. Here, we show that the single Bi2O2Se ionic layer in the three-anion vdW semiconductor Bi4O4SeCl2 showing extremely low thermal conductivity can be expanded to higher-order layers forming a homologous series Bi2+2nO2+2nSenX2 (X = Cl, Br) with variable ionic layer thicknesses. Bi4O4SeX2 (n = 1) and Bi6O6Se2X2 (n = 2) were isolated as single-phase materials, while materials with larger layer thicknesses such as Bi8O8Se3Cl2 (n = 3) contain different defect-intergrowth structures at the crystallite scale. The anionic disorder of Se and X within the Bi2O2Se and Bi2O2X2 slabs is a critical factor in the stabilization of Bi2+2nO2+2nSenX2. The ∼50% Se substitution by X anions in the Bi2O2Se slab as related to the weak interlayer interaction can serve as a stabilization criterion of Bi2+2nO2+2nSenX2. All of these materials show similar optical indirect band gaps of ∼1.05 eV, originating from the electronic states in the Bi2O2Se slabs. Pellets prepared from these vdW materials possessed low bulk resistivities (100 Ω·cm) and exceptionally low and tunable thermal conductivities (0.66 W/mK and lower) parallel to the pressing axis of the pellets (heavier the halogen is, lower is the thermal conductivity). The results presented here provide important multiple anion chemistry for tailoring the ionic-bonding network into different thicknesses in the vdW layered structures and therefore their physical properties.

研究领域: 材料科学 · 化学
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DALTON TRANSACTIONS · 2025 ·Vol. 54 ·期 8 ·3467-3477 · IF 3.3

TiO2/CoOx heterostructure decorated MIL-100(Fe) by atomic layer deposition for enhanced photocatalytic oxygen production

Wenhui Hu,Zhongxin Song,Lingna Sun,Lei Zhang,Qianling Zhang,Xiangzhong Ren,Yongliang Li

Efficient separation of photogenerated charge carriers is essential for maximizing the photocatalytic efficiency of semiconductor materials in oxygen evolution reactions (OER). This study presents a novel trimetallic photocatalyst, MIL-100(Fe)/TiO2/CoOx, synthesized through a facile microwave-assisted hydrothermal method followed by atomic layer deposition (ALD). The porous MIL-100(Fe) serves as a support for the sequential deposition of TiO2 and CoOx layers via ALD, which enhances electron–hole pair separation and minimizes their recombination. Characterization using transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS) confirms the uniform deposition of TiO2 and CoOx layers on the MIL-100(Fe) surface. The optimized photocatalyst, processed with 20 deposition cycles of Co, exhibits exceptional photocatalytic OER performance, with an oxygen evolution rate of 558.3 μmol g−1 h−1. This enhancement in activity is attributed to the synergistic interaction between the spatially separated TiO2 and CoOx cocatalysts, which facilitates efficient charge transfer and increases the number of active sites. These findings highlight the potential of ALD-fabricated heterostructures in the development of advanced photocatalysts for sustainable energy production.

CAS / MDL: 7439-89-6
研究领域: 材料科学 · 能源化学
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CHEMICAL ENGINEERING JOURNAL · 2020 · IF 10.652

Substrate-dependent ALD of Cux on TiO2 and its performance in photocatalytic CO2 reduction

Mu Liu,Liren Zheng,Xiaolei Bao,Zeyan Wang,Peng Wang,Yuanyuan Liu,Hefeng Cheng,Ying Dai,Baibiao Huang,Zhaoke Zheng

Atomic layer deposition (ALD) technique has been proved to be an efficient method to synthesize or modify catalyst. In this study, Cu was loaded on different TiO 2 substrates, pristine TiO 2 and black TiO 2 (denoted as H-TiO 2 ) to achieve better CO 2 photocatalytic reduction performance. Both TiO 2 @Cu and H-TiO 2 @Cu exhibited dramatic enhancement for CO and CH 4 production. The peculiar phenomenon of TiO 2 outperforming H-TiO 2 after ALD loading was further studied by a series of characterization methods. Even though H-TiO 2 showed superior performance for photocatalytic CO 2 reduction than TiO 2 , pristine TiO 2 loaded with more Cu 0/+ after ALD deposition surpassed the performance of H-TiO 2 @Cu which possessed less amount of Cu 0/+ and more Cu 2+ . Cu 0/+ is proved to be the crucial factor for CO 2 reduction and it is capable of overshadowing the influence of Ti 3+ and V o . These results indicate that not only will ALD technique significantly enhance the CO 2 reduction performance after Cu deposition, but the substrate employed for loading and the chemical state of loaded material will also influence the subsequent catalytic performance. In addition, our result provides additional experiment evidence for justifying the significance of Cu 0/+ in photocatalytic CO 2 reduction reaction.

CAS / MDL: 13463-67-7 16940-66-2
研究领域: 材料科学 · 环境科学
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Surfaces and Interfaces · 2025 · IF 6.3

Electroless deposition of Cu seed layer catalyzed by Ag nanoparticles for micro through silicon via metallization

Zhao-Yun Wang,Xin Zhao,An-Ni Zheng,Lei Jin,Jia-Qiang Yang,Jun-Yang Liu,DongPing Zhan,Da-Quan Yu,Fang-Zu Yang,Shi-Gang Sun

Metallization of micro through silicon via (TSV) is vital in 3-dimensional integration of chips and high-density printed circuit boards. As the diameter decreases and aspect ratio increases, realizing a uniform copper seed layer inside TSV becomes increasingly challenging by using traditional techniques of high-cost physical vapor deposition (PVD) and chemical vapor deposition (CVD). Cu electroless deposition (Cu-ELD) is a promising technique for growing a conductive seed layer on the wall of TSV, and promotes the completion of metallization of micro TSV following by Cu electroplating. In the current study, an advanced method is developed to form Cu seed layer on micro TSV by Cu-ELD catalyzed through Ag nanoparticles. The Ag nanoparticles are synthesized using gallic acid as the reducing agent (denoted as GA-Ag NPs). Ultraviolet–visible absorption spectroscopy and transmission electron microscopy are applied to study the mechanism of conformal Cu-ELD catalyzed by GA-Ag NPs, and results demonstrate that all Ag ions are reduced to spherical Ag NPs of 9.7 nm in average size. Electrochemical tests and finite element simulation illustrate that the high catalytic activity of GA-Ag NPs facilitates Cu-ELD to achieve an effective conformal deposition in TSV. The obtained continuous and uniform Cu seed layer enables the void-free filling of TSV ultimately by Cu electroplating. An in situ XRD device is designed and built up for investigation of Cu-ELD process, which reveals that the Cu layer catalyzed by GA-Ag NPs during growth is stable and exhibits a mixed crystalline structure with texture coefficient ( TC ) values of Cu (220) and Cu (311) close to and higher than 25 %.

研究领域: 材料科学 · 电子工程
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POSTHARVEST BIOLOGY AND TECHNOLOGY · 2016 · IF 2.618

Abscisic acid mediates wound-healing in harvested tomato fruit

Xiaoya Tao,Linchun Mao,Jiayin Li,Jingxin Chen,Wenjing Lu,Si Huang

The development of wound periderm is vital to prevent water vapor loss and pathogen invasion in wounded fruit. The effect of abscisic acid (ABA) on wound-healing in harvested tomato fruit was evaluated in this study. Wounded tomato fruit were treated with ABA or fluridone (FLD, an inhibitor of ABA biosynthesis), respectively, and allowed to wound-heal at 20   °C in darkness for 4   days. Weight loss of tomato fruit reflected the intuitionistic effects of different treatments during wound-healing. Autofluorescence and histochemical staining demonstrated the development of suberized wound periderm in harvested tomato fruit at 3–4   day after wounding. Alkanoic acids, n -alkanes, unsaturated fatty acids and pentacosane represented the major components in the suberin. ABA-treated fruit showed enhanced autofluorescence, histochemical intensity and suberin deposition along with increased activities of phenylalanine ammonia-lyase (PAL) and peroxidase (POD). FLD treatment, however, alleviated the features of suberization and enzyme activities during wound-healing. The results suggest that ABA is involved in the stimulation of wound-induced suberization in harvested tomato fruit.

研究领域: 植物学 · 园艺学
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APPLIED SURFACE SCIENCE · 2019 · IF 5.155

Less is more: Enhancement of photocatalytic activity of g-C3N4 nanosheets by site-selective atomic layer deposition of TiO2

Peng Lv,Chongyang Zhao,Woo Jae Lee,Siping Huo,Se-Hun Kwon,Jun Fang,Yang Yang

Zero-dimensional/two-dimensional (0D/2D) TiO 2 /g-C 3 N 4 heterostructural photocatalysts were fabricated via ALD technique. TiO 2 nanoparticles were “site-selectively grown” on g-C 3 N 4 nanosheets and the surface modification induced band engineering of the composite photocatalysts. Thus, the redox properties of the photocatalysts were fine tuned. Under visible light , since only g-C 3 N 4 was excited, TiO 2 was acting as the electron transport channel in the optimized interfacial structures . They effectively suppressed the recombination and facilitated the transfer of photogenerated charges, improving the photocatalytic activity. When both the components were excited under UV–vis light, the dynamic equilibrium of the conduction band positions on these n–n type semiconductor heterojunctions led to the increased recombination rate of charges, decreasing the reactivity for H 2 evolution. However, the photocatalytic degradation of organic pollutants by these composite photocatalysts exhibited enhanced activities, resulting from the photogenerated holes on VB of TiO 2 which could promote oxidation of organic pollutants with strong oxidation potentials. Furthermore, TiO 2 /g-C 3 N 4 photocatalysts with limited numbers of deposition cycles exhibited optimal photocatalytic activity under visible light. In contrast, excessive deposition cycles on g-C 3 N 4 for TiO 2 /g-C 3 N 4 led to continuous film and increased thickness of TiO 2 , resulting in the attenuation of the reactivity. We verified this TiO 2 /g-C 3 N 4 photocatalysts with less mass-loading, but more enhanced photocatalytic activity.

CAS / MDL: 100-02-7
研究领域: 材料科学 · 环境科学 · 化学工程
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JOURNAL OF MEMBRANE SCIENCE · 2017 · IF 6.035

Ceramic tubular nanofiltration membranes with tunable performances by atomic layer deposition and calcination

He Chen,Xiaojuan Jia,Mingjie Wei,Yong Wang

Ceramic nanofiltration (NF) membranes are of particular significance for molecular separations under harsh conditions. However, they are usually manufactured by the sol-gel process which frequently suffers from low efficiency and poor control in the membrane properties. Herein we demonstrate an efficient and more controllable strategy to produce ceramic tubular NF membranes based on atomic layer deposition (ALD). Tubular ceramic membranes with pore size of ~5   nm are used as the substrates, on which titanium alkoxide (titanicone) is ALD-deposited. Subsequent calcination in air degrades the organic moieties in titanicone, thus converting the dense layer of titanicone into a microporous layer of TiO 2 . This microporous TiO 2 layer serves as a thin separation layer delivering the NF size-sieving function. The thickness of the TiO 2 layer can be readily tuned by changing the ALD cycle numbers, and correspondingly the original substrate membranes are progressively tightened with rising ALD cycles, and the membrane with 300 cycles exhibits a molecular-weight-cut-off (MWCO) of ~680   Da and water permeability of 30   L   m −2   h −1   bar −1 . Such a water permeability is higher than many other ceramic tubular membranes with similar MWCOs because of the ultrathin nature of the microporous TiO 2 layer established by titanicone deposition and calcination.

CAS / MDL: 25322-68-3
研究领域: 材料科学 · 分离技术
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INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH · 2020 · IF 3.573

Platinum Nanoparticle-Deposited Ti3C2Tx MXene for Hydrogen Evolution Reaction

Xiaobao Zhang,Baiyi Shao,Zemin Sun,Zhe Gao,Yong Qin,Ce Zhang,Fangming Cui,Xiaojing Yang

Nobel metal Pt composites show high catalytic activity for hydrogen evolution reaction (HER) but limited in application by high Pt contents and therefore the cost. Herein, a series of Pt nanoparticle (NP)-deposited 2D Ti3C2Tx MXenes were prepared by an atomic layer deposition (ALD) method with relatively low Pt contents (0.98–3.10 wt %) and showed excellent HER catalytic activity and stability. The electrochemical results indicated that the prepared catalysts showed the optimal HER activity as the ALD deposition cycle reached 40, with an overpotential of 67.8 mV approaching that of the commercial Pt/C catalyst (64.2 mV). The excellent behavior was attributed to the homogeneous dispersion of the Pt NPs and the good conductivity of the 2D Ti3C2Tx MXene supports.

CAS / MDL: 7664-39-3 2052-49-5
研究领域: 材料科学 · 电化学
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JOURNAL OF LUMINESCENCE · 2023 · IF 3.6

Optimum temperature of atomic layer deposition of alumina on CsPbBr3 quantum-dot for optical performance and environmental stability

Zijun Yan,Fangshun Ye,Liyue Xu,Xiao Yang,Shouqiang Lai,Shuli Wang,Yue Lin,Guolong Chen,Yijun Lu,Hao-Chung Kuo,Zhong Chen,Tingzhu Wu

Atomic layer deposition (ALD) plays a pivotal role in raising the long-term stability of perovskite quantum dot (PQD). The deposition temperature of excellent alumina film prepared by ALD is generally higher than 200 °C. In such a temperature environment, the lattice morphology of PQD is seriously damaged. In this work, to effectively protect PQD, the optimum temperature for depositing alumina on the surface of CsPbBr 3 PQD is investigated. The CsPbBr 3 PQD is deposited on a transparent glass substrate . Subsequently, an alumina layer is deposited on the surface of PQD via ALD at a deposition temperature of 40–120 °C. In our experiment, the significant degradation of PQD is observed when the deposition temperature of ALD is set to 80 °C and above. Lowering the deposition temperature can effectively improve the optical performance of PQD. The samples with alumina deposited at 75 °C show excellent stability after undergoing aging tests, and therefore 75 °C is considered the best ALD temperature. Besides, white light-emitting diode (W-LED) is produced by a method that a stack structure consisting of CsPbBr 3 coated via ALD at 75 °C and CdSe QD is excited using blue Micro-LED, and the color gamut of W-LED accounts for the wide area of 94.00% NTSC (1953) and 86.20% Rec.2020 displayed wide color gamut features. The experiment provides practical guidance for selecting the optimal deposition temperature for ALD-packaged PQD-based devices.

研究领域: 材料科学 · 光电技术
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