CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Chongguang Lyu,Yuchi Qian,Guixiang Zhan,Jiaxiao Yuan,Kaiyue He,Huihua Min,Chang Liu,Yang Cao,Xuefen Song,Huifang Ma,Yunfei Liu,Lin Wang
Rare earth ions have been widely investigated as active dopants in various materials because of their distinct optical, electronic and magnetic properties . Halide perovskite resistive memories have attracted increasingly recent interest for tremendous potential applications in computation and data storage techniques. However, it remains unexplored to implement rare earth doping strategy for tuning perovskite resistive memories. Here, we report read-only memories based on environment-friendly and air-stable lead-free double perovskite Cs 2 AgBiBr 6 films, which is particularly tuned by rare earth La 3+ doping. We use the vacuum sublimation and solution processing method to obtain Cs 2 AgBiBr 6 crystals doped by different content La 3+ , and fabricate resistive memory devices based on doped Cs 2 AgBiBr 6 films. The simplest sandwich-like structure composed of ITO/La-doped-Cs 2 AgBiBr 6 /Ag only is designed in cross-bar array architecture with high-integration and simple operation. The resistive memory device of La-doped Cs 2 AgBiBr 6 films demonstrate a typical write-once-read-many-times (WORM) behavior with low onset voltage of 1 V and long retention time of 12000 s. In particular, the ON/OFF ratio of the La-doped Cs 2 AgBiBr 6 film is 100 times higher than that of the undoped Cs 2 AgBiBr 6 film. This study provides a new insight to design and manipulate memory devices based on lead-free halide perovskite materials through doping effect of rare earth ions.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
ADVANCED FUNCTIONAL MATERIALS
·
2022
·Vol. 32
·期 38
·2202951
·
IF 19.924
Xiaomin Liu,Shuxia Ren,Zhenhua Li,Jiajun Guo,Shenghui Yi,Zheng Yang,Weizhong Hao,Rui Li,Jinjin Zhao
Perovskite resistive random-access memory (RRAM) is a promising candidate for next-generation logic, adaptive and nonvolatile memory devices, because of its high ON/OFF ratio, low-cost fabrication, and good photoelectric regulation performance. In this work, a flexible transparent CsPbBr 3 quantum dots (QDs) mixed in graphene oxide (GO) RRAM device is introduced, which is controllable by both an electric field and illumination. Under illumination, the ON/OFF ratio of the Ag/CsPbBr 3 QDs:GO/ITO device is ≈ 1.4 × 10 7 , which is 1077 times larger than that in the dark condition (1.3 × 10 4 ). The SET/RESET voltages are + 2.28/ − 2.04 V and + 1.68/ − 1.08 V under the dark and illumination conditions, respectively. As a flexible memory device, the resistances are little affected by the bending curvatures and load-cycling. Before and after 10 4 bending cycles with a radius of 5 mm under illumination, the ON/OFF ratios keep in the same order, which are 2.5 × 10 7 and 2.3 × 10 7 , respectively. The ratio values are 8.8 × 10 4 and 2.9 × 10 4 under the dark condition, respectively. This innovative resistive memory based on the CsPbBr 3 QDs:GO hybrid film supports a huge space for the development of photoelectrical dual-controlled flexible RRAM devices.
研究领域:
材料科学
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电子工程
·
光电子学
✓ 已验证
DOI
高影响因子
OPTICAL MATERIALS
·
2019
·
IF 2.687
Zhiliang Chen,Yating Zhang,Yu Yu,Yongli Che,Lufan Jin,Yifan Li,Qingyan Li,Tengteng Li,Haitao Dai,Jianquan Yao
Write Once Read Many (WORM) Memory, as one of the most important nonvolatile memory type, has widespread used in a variety of permanent storage applications in the Big Data age. As an excellent material, CsPbBr 3 quantum dots have widely used in a lot of photoelectric devices, but CsPbBr 3 quantum dots based memory device remain to be studied. In this work a WORM memory device based on CsPbBr 3 quantum dots is demonstrated. The CsPbBr 3 QDs based WORM shows great reproducibility, good data retention ability, irreversible electrical transition from the high resistance state (HRS) or OFF state to the low resistance state (LRS) or ON state and the resistance ratio (ON/OFF) can reach almost 10 4 . Additionally, the device exhibits high performances under low power consumption — low reading voltage (−0.5 V) and writing voltage (−1.1V). To study the CsPbBr 3 QDs based WORM provides an opportunity to develop the next generation high-performance and stable WORM devices.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
POLYMER
·
2021
·
IF 4.43
Kang Chen,Yuhang Yin,Cheng Song,Zhengdong Liu,Xiaojing Wang,Yueyue Wu,Jing Zhang,Jianfeng Zhao,Minghua Tang,Juqing Liu
Two-dimensional (2D) memristive materials are of primary interest for resistive memory electronics. Herein, we report a high performance volatile dynamic-random-access memory (DRAM) based on 2D triphenylamine polymer. The 2D polymer was prepared via a solid-liquid interface limited polymerization method, with the merits of large-area, structure stability, and controllable film thicknesses. Utilizing the layered polymer as memristive medium in diode, the device shows a typical volatile DRAM performance. Impressively, the memory has an ultrahigh on/off current ratio up to 10 7 , as well as outstanding thermal stability approaching at 300 °C. Both current ratio and thermal stability are higher than most previous polymer DRAM memories. Our work provides an effective strategy to construct scalable and stable 2D polymers toward high performance memory.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
Frontiers of Information Technology & Electronic Engineering
·
2020
·Vol. 20
·期 12
·1698-1705
·
IF 1.604
He Xiang-lei,Tang Rui-jie,Yang Feng,Kadhim Mayameen S.,Wang Jie-xin,Pu Yuan,Wang Dan
We propose a nonvolatile resistive random access memory device by employing nanodispersion of zirconia (ZrO 2 ) quantum dots (QDs) for the formation of an active layer. The memory devices comprising a typical sandwich structure of Ag (top)/ZrO 2 (active layer)/Ti (bottom) are fabricated using a facile spin-coating method. The optimized device exhibits a high resistance state/low resistance state resistance difference (about 10 Ω), a good cycle performance (the number of cycles larger than 100), and a relatively low conversion current (about 1 µA). Atomic force microscopy and scanning electron microscope are used to observe the surface morphology and stacking state of the ZrO 2 active layer. Experimental results show that the ZrO 2 active layer is stacked compactly and has a low roughness (Ra=4.49 nm) due to the uniform distribution of the ZrO 2 QDs. The conductive mechanism of the Ag/ZrO 2 /Ti device is analyzed and studied, and the conductive filaments of Ag ions and oxygen vacancies are focused on to clarify the resistive switching memory behavior. This study offers a facile approach of memristors for future electronic applications.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
Nanoscale
·
2024
·Vol. 16
·期 25
·12142-12148
·
IF 5.8
Hua An,Yiyang Li,Yi Ren,Yili Wan,Weigao Wang,Zhenhua Sun,Junwen Zhong,Zhengchun Peng
The application of resistive random-access memory (RRAM) in storage and neuromorphic computing has attracted widespread attention. Benefitting from the quantum effect, transition metal dichalcogenides (TMD) quantum dots (QDs) exhibit distinctive optical and electronic properties, which make them promising candidates for emerging RRAM. Here, we show a high-performance forming-free flexible RRAM based on high-quality tin disulfide (SnS2) QDs prepared by a facile liquid phase method. The RRAM device demonstrates high flexibility with a large on/off ratio of ∼106 and a long retention time of over 3 × 104 s. The excellent switching behavior of the memristor is elucidated by a charge trapping/de-trapping mechanism where the SnS2 QDs act as charge trapping centers. This study is of significance for the understanding and development of TMD QD-based flexible memristors.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Advanced Electronic Materials
·
2021
·Vol. 7
·期 12
·2100322
·
IF 7.295
Qi Xue,Tao Hang,Zheng Gong,Linfeng Chen,Jianghu Liang,Yu Sun,Di Lu,Xiaonong Zhang,Chun-Chao Chen,Ming Li
“Transient” resistive random access memory (RRAM) has attracted tremendous research interests in recent years, due to its biodegradable characteristics and data storage capability. Zinc oxide (ZnO) has been widely used as the biodegradable and biocompatible material. However, research on ZnO based-RRAM shows undesired performance due to masses of intrinsic defects and low crystallinity in ZnO films when deposited using sputtering and so on. In this work, excellent crystallinity and oxygen vacancy-poor electrochemically-deposited zinc oxide (ED-ZnO) films are utilized as the active layer for fabricating transient resistive memory device with a structure of Ag/ED-ZnO/W. This ED-ZnO RRAM device exhibits uniform switching voltage, stable retention time (over 10 4 s) at 37 °C, and outstanding endurance up to 2500 cycles without obvious degradation. Additionally, a fully degradable RRAM device is fabricated by water-assisted transfer printing method and it can be dissolved completely after immersed in phosphate buffered saline solution without encapsulation layer after 60 min. The cell toxicity test demonstrates the biocompatibility of the dissolved memory device. These results suggest that the ED-ZnO based transient RRAM has a significant potential for data storage applications in transient electric system and implantable biomedical device.
研究领域:
材料科学
·
生物医学工程
✓ 已验证
DOI
高影响因子
DYES AND PIGMENTS
·
2016
·
IF 4.055
Qing Bao,Hua Li,Yang Li,Jinghui He,Qingfeng Xu,Najun Li,Dongyun Chen,Lihua Wang,Jianmei Lu
In this paper, two acceptor-donor-acceptor (A-D-A) type organic small molecules, 4,4'-(5,5'-(benzo[c] [1,2,5]thiadiazole-4,7-diyl)bis(3-hexylthiophene-5,2-diyl))bis(N-(4-nitrophenyl)-N-phenylaniline) (NTPA 2 TBT) and 4,4'-(5,6-difluorobenzo[c] [1,2,5]thiadiazole-4,7-diyl)bis(N-(4-nitrophenyl)-N-phenylaniline) (NTPA 2 BTF 2 ), were synthesized and fabricated into resistive random access memory devices. Compared with our previously reported molecule NTPA 2 BT, NTPA 2 TBT has 3-hexylthiophene linkages bridging its donor and acceptor, while there are two additional fluorine atoms in the benzothiadiazole moiety for NTPA 2 BTF 2. Both the fabricated memory devices based on these two new molecules perform nonvolatile ternary memory characteristics with lower threshold voltages , higher reproducibility and better stability. The addition of 3-hexylthiophene bridges significantly promotes the planarity of the conjugation backbone and facilitates the molecular stacking, while the substitution hydrogen by fluorine improves the intermolecular interaction , and thus also induces an ordered molecular stacking. The insertion of 3-hexylthiophene bridges or fluorine atoms could be an effective strategy of tailoring organic molecules to improve data storage performance with lower power consumption.
研究领域:
材料科学
·
有机电子学
·
分子器件
·
非易失性存储器
·
高分子化学
✓ 已验证
DOI
高影响因子
CARBON
·
2018
·
IF 7.082
Yaming Cao,Yubin Fu,Dongqi Li,Chunxuan Zhu,Bin Zhang,Yu Chen
The best strategy to improve the solubility of two-dimensional materials is merge them into a polymer backbone or a polymer matrix to form new kind of functional materials . A novel π-conjugated and highly soluble organophosphorus-based polymer covalently functionalized reduced graphene oxide derivative material, PTPEB- g -RGO, has been successfully synthesized, characterized, and was used as active layer material in resistive random access memory (RRAM) devices. The as-fabricated Al/PTPEB- g -RGO/ITO device exhibited nonvolatile bistable resistive switching performances with a large ON/OFF current ratio surpassing 10 4 , long retention time over 10 4 s, excellent endurance over 200 switching cycles, significant slight |ΔON-OFF| value and remarkable repeated “write-read-erase-read-rewrite” capability. A slight value difference between the turn on voltage and turn off voltage is beneficial for reducing power consumption and decreasing information misreading rate in digital memory cell. The present research work offers a significant insight for the future development of organic memory devices by taking advantage of organophosphorus-based polymer material.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
EUROPEAN POLYMER JOURNAL
·
2018
·
IF 3.741
Yanhua Yang,Jingcheng Xia,Zijun Ding,Youxuan Zheng,Shijin Ding,Yingzhong Shen
Four new symmetric diamines (4,4′-(2,7-diphenyl-9H-fluorene-9,9-diyl)dianiline (TPF-Ph), 4,4′-(2,7-bis(4-(naphthalen-1-yl)phenyl)-9H-fluorene-9,9-diyl)dianiline (TPF-Ph-Na), 4,4′-(2,7-di([1,1′-binaphthalen]-4-yl)-9H-fluorene-9,9-diyl)dianiline (TPF-2Na), and 4,4′-(2,7-bis(3,5-dimethoxyphenyl)-9H-fluorene-9,9-diyl)dianiline (TPF-Ph-OMe)) containing tetraphenyl fluorene (TPF) core were synthesized through Suzuki coupling reaction, the corresponding four polyimides (PI(TPF-Ph), PI(TPF-Ph-Na), PI(TPF-2Na), and PI(TPF-Ph-OMe)) were prepared through polymerization reaction. The electrical memory measurement displayed that PI(TPF-Ph) and PI(TPF-Ph-Na) exhibited volatile dynamic random access memory (DRAM) behaviors, PI(TPF-2Na) possessed volatile static random access memory (SRAM) behavior due to the more distorted structure of 1,1′-binaphthalenyl moiety, and PI(TPF-Ph-OMe) showed non-volatile write-once read-many (WORM) behavior due to the presence of deeper charge traps and higher dipole moment of 3,5-dimethoxyphenyl substituent. They possessed low turn-on switching voltages and the ON/OFF current ratios were between 10 3 and 10 5 with the retention times up 4 × 10 3 s. Quantum simulations about energy levels, electrostatic potential (ESP) surfaces, and dipole moment were used to demonstrate the switching mechanism. The experimental results indicated that the electrical memory behaviors of the synthesized polyimides could be tuned through rational structural modification of the electron donor moiety.
研究领域:
材料科学
·
电子工程
✓ 已验证
产品关联
DOI
高影响因子
CRYSTENGCOMM
·
2024
·Vol. 26
·期 44
·6314-6321
·
IF 2.6
Zhen Liu,Danli Song,Wen-Bo Pei,Liquan Wu,Hong Xie,Gaigai Cai,Jiefei Yang,Bing Zheng,Wei-Wei Xiong
Metal–organic frameworks (MOFs), self-assembled by metal ions and organic ligands, have been utilized as active layers in resistive random-access memory (RRAM) devices due to their tunable composition and structure advantages, high porosity, and diverse interactions between guest molecules and host frameworks. As one kind of special MOF, MOF nanosheets not only inherit the benefits of MOFs but also present unique two-dimensional nanoscale thicknesses. Their special properties make them beneficial for fabricating MOF films. Thus, they could be promising materials for RRAM devices. Herein, we synthesized two porphyrin MOF nanosheets and then fabricated MOF films by spin-coating. After that, we used the films for resistive switching (RS) layers in memory devices. The as-fabricated RRAM devices exhibit write-once-read-many-times memory characteristics and good nonvolatile stability. Furthermore, due to the unique luminescence of the porphyrin linker, we investigated the light-induced resistive switching characteristics. The result shows that these porphyrin-based MOF nanosheet films exhibited ternary memory properties. This RS modulation is likely related to the photoinduced electrons and holes forming along channels consisting of porphyrin molecules. This MOF-based light-mediated memory device can be a candidate for achieving environment-responsive devices and has applications in information storage devices.
研究领域:
材料科学
·
电子工程
·
光学
✓ 已验证
DOI
高影响因子
RSC Advances
·
2017
·Vol. 7
·期 38
·23550-23559
·
IF 3.108
Nanfang Jia,Guofeng Tian,Shengli Qi,Junhao Cheng,Xiaodong Wang,Dezhen Wu
To elucidate the influence of spatial structure on memory behavior, three isomeric polyimides (PIs), PI-3,6-DAPCz-6FDA, PI-3,4′-DAPCz-6FDA, and PI-2′,4′-DAPCz-6FDA, for electrical memory applications are designed and synthesized. Current–voltage characteristics indicate that the three isomeric PIs display vastly deviating memory effects. PI-3,6-DAPCz-6FDA and PI-3,4′-DAPCz-6FDA both show volatile static random access memory (SRAM) behavior, while PI-2′,4′-DAPCz-6FDA exhibits a non-volatile write once read many times (WORM) memory characteristic. The mechanisms associated with the memory effect were analyzed based on molecular simulation results. PI-3,6-DAPCz-6FDA possesses the best structural coplanarity, which greatly facilitates its charge transfer (CT) and back CT process, leading to the volatile SRAM feature. However, PI-2′,4′-DAPCz-6FDA exhibits more torsional structures, which consequently prohibits the back CT process, explaining its non-volatile behavior. Additionally, the three isomeric PIs show fast transient responses. The results show the importance of the spatial structure on polymer memory and the viability of adjusting memory types by isomerization.
研究领域:
材料科学
·
电子工程
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）