Preparation of two-dimensional molybdenum disulfide for NO2 detection at room temperature
In this work, the two-dimensional MoS 2 film was prepared by sulfuring the molybdenum atomic layer on SiO 2 /Si substrate. The reaction temperature, heating rate, holding time and carrier gas flow rate were investigated comprehensively. The quality of MoS 2 film was characterized by optical microscopy, atomic force microscopy, Raman and photoluminescence spectroscopy. The characterization results showed that the optimum synthesis parameters were heating rate of 25 °C/min, reaction temperature of 750 °C, holding time of 30 min and carrier gas velocity of 100 sccm. The MoS 2 gas sensor was fabricated and its gas sensing performance was tested. The test results indicated that the sensor had a good response to both reducing gas (NH 3 ) and oxidizing gas (NO 2 ) at room temperature. The sensitivity to 100 ppm of NO 2 was 31.3%, and the response/recovery times were 4 s and 5 s, respectively. In addition, the limit of detection could be as low as 1 ppm. This work helps us to develop low power and integrable room temperature NO 2 sensors.
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