CRYSTENGCOMM
·
2023
·Vol. 25
·期 44
·6162-6170
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IF 3.1
Shuai Wen,Huan Liu,Lier Deng,Jijie Zhao,Yuxuan Du,Shengyong Wang,Fei Gao,Zhipeng Zhu,Fei Xie,Weiguo Liu
Broadband photodetectors capable of detecting light across a wide spectrum ranging from visible to short wave infrared (SWIR) wavelengths have significant relevance in various fields, including space technology and civil applications. HgTe quantum dots (QDs) have emerged as a promising candidate for the development of low-cost broadband photodetectors. In this study, a photodetector based on a layered structure of indium tin oxide (ITO)/HgTe QD film/gold (Au) was designed and fabricated using a layer-by-layer spin coating method. The fabricated photodetector exhibited a broadband response from 400 nm to 2000 nm, covering the visible and SWIR regions. Its broad spectral range makes it suitable for a wide range of applications. Additionally, the photodetector demonstrated a fast response time of approximately 300 μs, enabling rapid detection and data acquisition. These results highlight the potential of HgTe QDs as a promising material for the development of advanced broadband photodetectors with fast response times. The simplicity of the device structure, combined with the low-cost fabrication technique, makes it an attractive option for commercialization and integration into various optoelectronic systems.
研究领域:
光学工程
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材料科学
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电子器件
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DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Yaru Shi,Mingxiu Liu,Yuting Zou,Yahui Li,Xingyu Zhao,Junru An,Mengqi Che,Fan Tan,Xiaojuan Sun,Dabing Li,Shaojuan Li
Broadband photodetectors have drawn intensive attention owing to their wide application prospects in optical communication, imaging, astronomy, and so on. Two-dimensional transition-metal dichalcogenides (TMDs) are considered as highly potential candidates for photodetection applications, benefiting from their excellent photoelectric properties. However, most of the photodetectors based on TMDs suffer from low performance in the near-infrared (NIR) region due to the weak optical absorption efficiency near their absorption band edge, which severely constrains their usage for broadband optoelectronics. Here, by taking advantage of the high absorption coefficient and environment-friendly property of Ag2S quantum dots (QDs), the hybrid of multilayer MoSe2/Ag2S QDs is demonstrated with a high-performance broadband photodetection capability (532–1270 nm). The favorable energy band alignment of MoSe2/Ag2S QDs facilitates effective separation and collection of photogenerated carriers, and the heterostructure device exhibits significant enhancement of performance compared to the bare MoSe2 device. High responsivity, detectivity, and external quantum efficiency of 25.5 A/W, 1.45 × 1011 Jones, and 1070% are obtained at a low working voltage of 1 V under 980 nm illumination. The responsivity of the device can reach up to 1.2 A/W at 1270 nm wavelength, which is competitive to the commercial NIR photodetectors. Meanwhile, broadband imaging capability is demonstrated. Our work may open up a facile and eco-friendly approach to construct high-performance broadband photodetectors for next-generation compact optoelectronic applications.
研究领域:
材料科学
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光电子学
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产品关联
DOI
PubMed
高影响因子
ACS Photonics
·
2024
·
IF 6.5
Zihao Dong,Qihang Zhang,Kai Liu,Zongyan Zuo,Qian-Jin Wang,Wenfeng Zhang,Yingkai Liu,Yan-Qing Lu,Yongyuan Zhu,Xuejin Zhang
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have been extensively investigated in photodetection due to their excellent optical and electrical properties. For TMDC monolayers, a large bandgap strongly limits the photoresponse range of photodetection, which can be extended to near-infrared wavelengths by two-photon absorption (TPA). However, it is usually difficult to reach telecom wavelengths, and inevitably results in the inefficiency of devices. Here, we address this issue by means of exciton-based interface engineering. Collaborating with TPA, excitons and interlayer excitons in van der Waals heterostructures can provide more degrees of freedom, including exciton resonance enhancement, working at telecom wavelengths, and broadband response. Moreover, the atomically flat interface of TMDC monolayer (heterostructure)/single-crystalline Ag demonstrates outstanding performance by virtue of high-efficiency conversion from excitons/interlayer excitons to photocarriers, as well as low loss of interface scattering. With an external bias, the broadband response of MoS2/WSe2 heterostructures on single-crystalline Ag can be achieved, with a responsivity of 1.08 mA/W at 1550 nm. Our results open possibilities for 2D semiconductors to realize broadband and sensitive photodetection.
研究领域:
材料科学
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光学工程
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半导体物理
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产品关联
DOI
高影响因子
JOURNAL OF COLLOID AND INTERFACE SCIENCE
·
2024
·
IF 9.4
Yue Yu,Dan Cao,Lingang Yang,Haibiao Guan,Zehao Liu,Changlong Liu,Xiaoshuang Chen,Haibo Shu
Two-dimensional (2D) layered group-IV monochalcogenides with large surface-to-volume ratio and high surface activity make that their structural and optoelectronic properties are sensitive to air oxidation. Here, we report the utilization of oxidation-induced gradient doping to modulate electronic structures and optoelectronic properties of 2D group-IV monochalcogenides by using SnS nanoplates grown by physical vapor deposition as a model system. By a precise control of oxidation time and temperature, the structural transition from SnS to SnSO x could be driven by the layer-by-layer oxygen doping and intercalation. The resulting SnSO x with a graded narrowing bandgap exhibits the enhanced optical absorption and photocurrent, leading to the fabricated SnSO x photodetector with remarkable photoresponsivity and fast response speed (<64 μs) at a broadband spectrum range of 520–1550 nm. The peak responsivity (7294 A/W) and detectivity (9.54 × 10 9 Jones) of SnSO x device are at least two orders of magnitude larger than those of SnS photodetector. Moreover, its photodetection performance can be competed with state-of-the-art of 2D materials-based photodetectors. This work suggests that the air oxidation could be utilized as an efficient strategy to engineer the electronic and optical properties of SnS and other 2D group-IV monochalcogenides for the development of high-performance broadband photodetectors.
研究领域:
材料科学
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光电技术
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纳米科技
✓ 已验证
DOI
高影响因子
SENSORS
·
2025
·Vol. 25
·期 8
·2530
·
IF 3.5
Junting Zhang,Jiexin Chen,Shuojia Zheng,Da Zhang,Shaojuan Luo,Huixia Luo
HighlightsWhat are the main findings?A facile chemical strategy was developed for the synthesis of two-dimensional Te-doped GeH nanostructures with atomic-level precision and structural integrity.The Te-GeH-based photoelectrochemical (PEC) photodetectors exhibit high responsivity (708.5 µA/W) and ultrafast response speeds (92 ms rise/526 ms decay) under zero-bias conditions, demonstrating excellent broadband photoresponse.What is the implication of the main finding?The introduction of Te atoms enables effective modulation of the electronic structure in the GeH system. Owing to the comparable atomic radius between Te and Ge, efficient doping is achieved without disrupting the host lattice. In addition, the high electronegativity of Te induces electron redistribution and facilitates the formation of a built-in electric field, thereby optimizing charge separation and transport behavior. This approach provides a novel pathway for the functional design of Zintl-phase-derived two-dimensional materials, with broad implications for advanced optoelectronic applications.This doping strategy significantly enhances the photoelectrochemical performance of GeH-based photodetectors and enables the scalable fabrication of 2D nanomaterials with tunable optoelectronic properties. The resulting Te-GeH nanostructures offer improved carrier dynamics and reduced recombination, serving as a promising material platform for next-generation self-powered broadband photodetectors.Two-dimensional (2D) Xenes, including graphene where X represents C, Si, Ge, and Te, represent a groundbreaking class of materials renowned for their extraordinary electrical transport properties, robust photoresponse, and Quantum Spin Hall effects. With the growing interest in 2D materials, research on germanene-based systems remains relatively underexplored despite their potential for tailored optoelectronic functionalities. Herein, we demonstrate a facile and rapid chemical synthesis of tellurium-doped germanene hydride (Te-GeH) nanostructures (NSs), achieving precise atomic-scale control. The 2D Te-GeH NSs exhibit a broadband optical absorption spanning ultraviolet (UV) to visible light (VIS), which is a critical feature for multifunctional photodetection. Leveraging this property, we engineer photoelectrochemical (PEC) photodetectors via a simple drop-casting technique. The devices deliver excellent performance, including a high responsivity of 708.5 µA/W, ultrafast response speeds (92 ms rise, 526 ms decay), and a wide operational bandwidth. Remarkably, the detectors operate efficiently at zero-bias voltage, outperforming most existing 2D-material-based PEC systems, and function as self-powered broadband photodetectors. This work not only advances the understanding of germanene derivatives but also unlocks their potential for next-generation optoelectronics, such as energy-efficient sensors and adaptive optical networks.
研究领域:
材料科学
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光学工程
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纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
ACS Applied Electronic Materials
·
2025
·
IF 4.7
Yi Liu,Chaojie Wu,Xiaoning Guan,Pengfei Lu,Wei Chen,Feiyu Zhao,Chenjie Gu,Xiang Shen
A photodetector that can perceive light across a wide spectral range is crucial for various technological applications in imaging, sensing, and communication. However, the conventional silicon-based photodetector faces the challenge of absorption deficiency in the visible and ultraviolet regions, while the perovskite-based photodetector exhibits a weak response to near-infrared wavelengths. In this work, a broadband photodiode based on a silicon/quasi-two-dimensional perovskite structure was presented, which leverages the strengths of both materials to compensate for their respective deficiencies. Moreover, the introduction of the organic small-molecule material, phthalocyanine-based compound aluminum phthalocyanine chloride (AlClPc), as an interface modification layer effectively resolves the problem of high dark current in vertical devices, significantly reducing devices power consumption and enhancing the Ion/Ioff ratio. The results show that the responsivity reaches up to 23.72 A/W, and the detectivity is 2.1 × 1010 cm Hz1/2 W1–. Furthermore, the introduction of the interface layer increases the diode’s switching ratio from 27.55 to 2.35 × 102, achieving an order-of-magnitude improvement. Overall, this study demonstrates that the interface layer can effectively reduce dark current with a minimal impact on photocurrent attenuation. Furthermore, the integration of organic and inorganic structures, along with a modification layer, can be an optimal approach to promote the performance of the photodetectors, achieving a broadband, high-responsivity, and high Ion/Ioff ratio.
研究领域:
材料科学
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光电技术
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半导体器件
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry C
·
2015
·Vol. 3
·期 20
·5183-5191
·
IF 4.696
X. Y. Liu,H. Guo,S. Ye,M. Y. Peng,Q. Y. Zhang
Zinc borate oxyfluoride glasses containing silver ions (Ag+), Ag nanoclusters and manganese ions (Mn2+) have been successfully prepared using the melt-quenching method. Their structure and luminescent properties were evaluated using transmission electron microscopy (TEM), absorption measurements, steady and time-resolved photoluminescence spectra and fluorescence lifetime measurements. Benefitting from the unique excitation/emission characteristics of Ag nanoclusters in the matrix, the Ag singly doped glass exhibited intriguing wavelength dependent, broad band luminescent performance. After Mn2+ ions were built into the singly doped sample, the emission band was extended to white emission and the intensity was enhanced 13 times with a maximal quantum yield of 24.9%. It was demonstrated experimentally that dual-mode energy transfer does occur from isolated Ag+ and (or) Ag nanoclusters to Mn2+. At the same time, the addition of Mn2+ substantially promotes the formation of Ag nanoclusters. Direct spectroscopic evidence as well as the assumed mechanism have been presented for these processes. This research may help to devise a new perspective for the use of noble metal nanoclusters and transition metals in designing broad band tunable light source.
研究领域:
材料科学
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光学
✓ 已验证
产品关联
DOI
高影响因子
Micro and Nanostructures
·
2025
·
IF 3
Zhou Huang,Feng Nan,Zhilong Zhang,Weiyu Feng,Lei Zhou
Silicon (Si) photodetectors are of great importance due to their many scientific and industrial applications, including optical interconnects, spectroscopy, optical communications, and semiconductor device processing. However, the responsivity of Si photodetectors drops sharply at shorter wavelengths due to their high light absorption coefficient and increased reflectivity in this range. In this report, a hybrid Si photodetector architecture is demonstrated by integrating an ultrathin fluorine- and nitrogen-co-doped carbon quantum dots (fnCQDs) layer using a facile fabrication technique. The results show that the hybrid device achieves a broadband photoresponse. The optimized incorporation of fnCQDs enhances the short-wavelength range responsivity between 300 nm and 550 nm, while simultaneously maintaining nearly identical fast rise times at the peak as the conventional bare Si device under 0 V working voltage. Moreover, the photoresponsivity and gain of the engineered optimal device are found to be approximately 0.012 A/W and 328, respectively, at a wavelength of 365 nm. Additionally, the maximum photocurrent-to-dark current ratio (@365 nm) of this hybrid device under a 0.01 V bias reaches approximately 6200, nearly six times greater than that of the standard reference device. The proposed approach and findings demonstrate the significant potential of fnCQDs for applications in hybrid photodetectors and related technologies.
研究领域:
材料科学
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光电子学
✓ 已验证
DOI
高影响因子
Nature Communications
·
2025
·Vol. 16
·期 1
·1-12
·
IF 15.7
Li Zhongyang,Gong Jue,Zhu Zhikai,Liu Donghao,Hu Qingyang,Wang Yiming,Liu Xuqiang,Zhou Shuo,Luo Hui,Wang Dong,Liu Xingyi,Yang Zengxi,Tang Min,Kong Qingyu,Adama N-Diaye,Zhang Kai,Yan Shuai,Zhang Lili,Zeng Xiaohui,Yu Zhenhai,Xia Wei,Yuan Jian,Li Mingtao,Li Nana,Dong Hongliang,Zhang Ziyou,Shu Haiyun,Ding Yang,Wang Dongbo,Guo Yanfeng,Xu Tao,Kong Lingping,Yang Wenge,Mao Ho-kwang,Liu Gang
Materials science exploits only properties that are available at ambience. Therefore, although high-pressure changes the physical state of all condensed matter, most of the extraordinary properties discovered vanish after decompression and cannot be utilized. Here, we demonstrate sublattice decoupling in a mixed-anion chalcohalide Rb 6 Re 6 S 8 I 8 upon compression, in which the [Rb 6 I 2 ] 4+ framework is soft and plastic, while the [Re 6 S 8 I 6 ] 4- clusters are hard and elastic. This discrepancy in the rigidity allows the applied pressure to selectively amorphize the framework while maintaining the ordered state in the cluster, leading to intriguing photocurrent generation and enhancement upon compression. These high-pressure properties are retained at ambience, permitting scalable synthesis of the decompressed samples using a large-volume press, followed by further fabrication into self-powered broadband photodetectors with a response time of ~ 10 2 μs and a specific detectivity of ~ 10 11 Jones. This study subverts the stereotype that pressure engineering is hardly to be employed for device applications.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
PubMed
高影响因子
Small
·
2017
·Vol. 13
·期 18
·1604033
·
IF 8.643
Shuo Chen,Xuemei Liu,Xvsheng Qiao,Xia Wan,Khurram Shehzad,Xianghua Zhang,Yang Xu,Xianping Fan
An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In 2 Se 3 nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In 2 Se 3 , a high-quality γ-In 2 Se 3 /Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In 2 Se 3 /Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In 2 Se 3 /Si heterojunction very interesting as highly efficient photodetectors.
研究领域:
材料科学
·
光电子学
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2024
·
IF 8.3
Zhipeng Lv,Huiping Gao,Yayong Hu,Yunpeng Fan,Gencai Pan,Huafang Zhang,Wenwu You,Zhenlong Zhang,Yanli Mao
Broadband photodetectors covering ultraviolet (UV) to near-infrared (NIR) wavelengths play an essential role in communications, imaging, and biosensing. Developing a single photodetector with a broadband optical response operating at room temperature can significantly reduce the complexity and cost of receiver systems for multispectral applications. In this work, utilizing the porous structure characteristics of Cs2AgBiBr6:Sn thin films, a self-powered detector with broad spectral response (UV–vis-NIR) was achieved by constructing an effective Cs2AgBiBr6:Sn/PDPP3T heterojunction. This photodetector possesses a broad response spectrum from 350 to 950 nm with an average detection rate exceeding 1011 Jones and maintains excellent photoelectric performance over two months. Sn2+ doping effectively reduces the bandgap of Cs2AgBiBr6, enhancing its near-infrared absorption and optimizing energy level alignment with conjugated polymer (diketopyrrolopyrrole-terthiophene, PDPP3T). More importantly, the porous structure derived from Sn doping significantly improves carrier extraction and transport under a near-infrared light response at the heterojunction interface. Utilizing its broad spectral response characteristics in the UV–vis-NIR range, a novel information transfer and encryption system employing full optical modulation has been realized within a single perovskite photodetector. This work provides a new approach to fabricating lead-free double perovskite broadband photodetectors with potential applications in photonic devices.
研究领域:
材料科学
·
光电技术
·
纳米技术
✓ 已验证
产品关联
DOI
PubMed
高影响因子
CARBON
·
2025
·
IF 11.6
Mingnan Chen,Kaixiang Kang,Zheng Chen,Nianzi Sui,Shuangshuang Shao,Min Li,Siyi Zhu,Wanzhen Xu,Jianwen Zhao
The development of neuromorphic optoelectronic devices with broadband response, low power consumption and high stability has emerged as a prominent research focus due to their potential application in artificial intelligence. Hence, we report a flexible carbon nanotube-based photoelectronic synaptic transistor array modified by a D-π-A-π-D structured photosensitive molecule, 4,8-diyldi-5,2-thiophenediylbis[4-(N,N-bis(4-octyloxyphenyl)amino)phenyl]benzo[1,2-c:4,5-c']bis([1,2,5]thiadiazole) (PM329), in the device channels. The incorporation of PM329 into single-walled carbon nanotube (SWCNT) channels enables broadband photoresponse ranging from 365 nm to 1050 nm, alongside outstanding device performance, including high stability (operational after two months of air storage), resistance to water and oxygen interference, long retention times (78.50 % of the current retained after 10000 s during slow relaxation) and ultralow power consumption (as low as 25 aJ per event). These properties are attributed to the precise energy band alignment between PM329 and SWCNTs, facilitating efficient charge transport and enhanced photoresponse. Furthermore, the neuromorphic devices exhibit critical synaptic behaviors, including excitatory postsynaptic currents (EPSC), short-term potentiation (STP), long-term potentiation (LTP) and paired-pulse facilitation (PPF). Key functionalities such as image perception, associative learning and long-term memory were successfully demonstrated under pulsed light stimulation. Notably, when integrated into a machine vision system, the transistor arrays enable automobile rear-end collision detection and image perception capabilities. This work highlights a robust and scalable strategy for developing carbon-based optoelectronic synaptic devices with high stability, energy efficiency and practical applicability, offering significant potential for artificial intelligence and neuromorphic computing.
研究领域:
材料科学
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神经形态计算
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人工智能
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）