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Optimization of transparent conductive properties of magnetron sputtered Sb-doped SnO2 films by RF power: Towards application in polymer-dispersed liquid crystal (PDLC) films

B.L. Zhu,X.J. Cai,C.C. Wang,J. Wu,J.L. Yao,W.Q. Sun

Sb-doped SnO 2 (ATO) films were prepared with different RF powers ( P RF ) under two O 2 flow rates ( F O 2 ) by magnetron sputtering , and then subjected to rapid thermal annealing (RTA) treatment. The effects of P RF , F O 2 , and RTA on the crystallinity, stress, surface morphology , conductive properties, transmittance in visible-light range ( T Vis ), and energy gap ( E g ) of the films were investigated. As the P RF increases, the film crystallinity improves or first improves and then slightly degrades, and the compressive stress decreases. With increasing P RF , the surface changes from textured to granular morphology and from granular to honeycomb-like morphology under two F O 2 , respectively. Meanwhile, the conductive properties first enhance and then degrade, and the T Vis and E g tend to decrease, especially at higher P RF . Basically, the films prepared with higher F O 2 have lower compressive stress, inferior conductive properties, and larger T Vis and E g compared with the films prepared with lower F O 2 . After RTA, the film crystallinity obviously improves, the compressive stress transforms into tensile stress , and the surface morphology has not undergone significant changes. Meanwhile, the conductive properties significantly enhance and E g obviously increases. The T Vis of the films prepared with lower F O 2 can be increased by RTA. The influence mechanisms of the above factors on the structure and optoelectronic properties of the ATO films were explored, and ultimately, the ATO films have the T Vis of 76.35–80.86%, sheet resistance of 51.7–91.9 Ω/sq., and quality factor of 1.03–1.67 × 10 −3  Ω −1 within the optimized P RF range. Polymer-dispersed liquid crystal (PDLC) films were fabricated using optimized performance ATO films as electrodes, and their on-state transmittance, off-state transmittance, threshold electric field, and saturation electric field were 2.08–4.61%, 61.69–68.56%, 0.656–0.796 V/μm, and 1.68–2.108 V/μm, respectively. The current results indicate the potential application of ATO films in PDLC films as electrode.