Huiyu Nong,Qinke Wu,Junyang Tan,Yujie Sun,Rongxu Zheng,Rongjie Zhang,Shilong Zhao,Bilu Liu
In recent years, 2D layered semiconductors have received much attention for their potential in next-generation electronics and optoelectronics. Wide-bandgap 2D semiconductors are especially important in the blue and ultraviolet wavelength region, although there are very few 2D materials in this region. Here, monolayer β-type zirconium nitride chloride (β-ZrNCl) is isolated for the first time, which is an air-stable layered material with a bandgap of ≈3.0 eV in bulk. Systematical investigation of layer-dependent Raman scattering of ZrNCl from monolayer, bilayer, to bulk reveals a blueshift of its out-of-plane A 1g peak at ≈189 cm –1 . Importantly, this A 1g peak is absent in the monolayer, suggesting that it is a fingerprint to quickly identify the monolayer and for the thickness determination of 2D ZrNCl. The back gate field-effect transistor based on few-layer ZrNCl shows a high on/off ratio of 10 8 . These results suggest the potential of 2D β-ZrNCl for electronic applications.
Hu Chuqiao,Du Zhijian,Wei Zhongming,Li La,Shen Guozhen
Ti3C2Tx MXene as a representative material in the emerging two-dimensional (2D) MXene family with high conductivity, abundant functional surface terminals, and large layer spacing is supposed to show specific semiconducting properties like other 2D graphene or transition metal dichalcogenides, thus extending Moore's law beyond silicon. However, despite extensive efforts, the design of Ti3C2Tx MXene based semiconductor materials often depends on the availability of traditional semiconductors to form heterojunctions, where Ti3C2Tx MXene is still in metallic characters and is not in dominant status in the heterojunctions. Here, we demonstrate semiconducting Ti3C2Tx MXene modified with dodecyl (−C12H26) groups, as functionalized Ti3C2Tx MXene possesses opened and typical layer-dependent bandgap. The new arising characteristics, red-shift of characteristic peaks, and intensity ratio of the A1g(C)/A1g(Ti, C, Tx) in Raman spectroscopy suggested the successful grafting of the −C12H26 groups on the Ti3C2Tx MXenes. In addition, the theoretical calculations by density functional theory, photoluminescence spectrum, together with photoelectric measurements of Ti3C2Tx-C12H26 MXene on different layers, show a tunable bandgap of 0.49–2.15 eV and superior photoresponse properties in fabricating near infrared photodetectors.