Thermoelectric devices (TEDs) show great potential for waste heat energy recycling and sensing. However, existing TEDs cannot be self-adapted to the complex quadratic surface, leading to significant heat loss and restricting their working scenario. Here, surface-conformable origami-TEDs (o-TEGs) are developed through programmable crease-designed origami substrates and the screen-printing TE legs. Compared with “π” structured TEDs, the origami design (with heat conductive materials) changed the heat-transferring direction of the laminated TE legs, resulting in an enhancement in enlarging Δ T / T Hot and V out by 5.02 and 3.51 times. Four o-TEDs with different creases designs are fabricated to verify the heat recycling ability on plane and central quadratic surfaces. Demonstrating a high V out density (up to 0.98 −2 at Δ T of 50 K) and good surface conformability, o-TEDs are further used in thermal touch panels attached to multiple surfaces, allowing information to be wirelessly transferred on a remote display via finger-writing.
Weihua Wang,Quanlin Wang,Lin Sun,Peng Jiang,Xinhe Bao
High-performance thermoelectric (TE) devices are promising for waste-heat recovery and power generation. Recently, Sb 2 Si 2 Te 6 has been demonstrated as a promising p-type TE material with high performance and low cost. However, Sb 2 Si 2 Te 6 -based TE devices have not yet been fabricated. The performance of TE devices depends on not only TE materials, but also electrode materials and inner interfaces. Herein, we utilize the high throughput strategy to screen the appropriate electrode material and find that cobalt exhibits a low contact resistance (2.47 μΩ cm −2 ) and a high shear strength (18.03 MPa). Furthermore, we successfully fabricate one eight-couple Sb 2 Si 1.99 Ge 0.01 Te 6 (p-type)/Yb 0.3 Co 4 Sb 12 (n-type) TE module with optimized geometric parameters by the finite element method . The module exhibits a high output power density (0.92 W cm −2 ) and a decent energy conversion efficiency (4.2%) under a temperature difference of 500 K. Our studies will promote further development of Sb 2 Si 2 Te 6 materials and Sb 2 Si 2 Te 6 -based devices.
危险品化学品经营许可证（带存储）