ACS Nano
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2023
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IF 17.1
Can Zou,Zixuan Zhao,Mingjun Xu,Xingfu Wang,Qing Liu,Kai Chen,Longfei He,Fangliang Gao,Shuti Li
To overcome the problem of minority carrier storage time in bipolar transistors, a hot electron transistor (HET) has been proposed. This device has the advantage of high working speed and some complex logic functions can be completed by using one component. Here, we demonstrate a mixed-dimensional HET composed of GaN/AlN microwires, graphene (Gr), and Si. The electrons between GaN/AlN are injected into graphene by an F-N tunneling mechanism to achieve high speed hot electrons, then cross graphene by ballistic transport, and are collected in a nearly lossless manner through a low-barrier Si. Therefore, the device shows a record DC gain of 16.2, a collection efficiency close to the limit of 99.9% based on the graphene hot electron transistor (GHET), an emitter current density of about 68.7 A/cm2, and a high on/off current ratio reaching ∼107. Meanwhile, the current saturation range is wide, beyond those of most GHETs. It has potential applications as a power amplifier.
研究领域:
电子学
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材料科学
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半导体物理
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DOI
PubMed
高影响因子
Materials
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2025
·Vol. 18
·期 15
·3528
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IF 3.2
Lai Liu,Huizhen Yao
Photoelectrochemical devices have garnered extensive research attention in the field of smart and multifunctional photoelectronics, owing to their lightweight nature, eco-friendliness, and cost-effective manufacturing processes. In this work, Bi2S3/Bi2O3/TiO2heterojunction film was successfully fabricated and functioned as the photoelectrode of photoelectrochemical devices. The designed Bi2S3/Bi2O3/TiO2photoelectrochemical photodetector possesses a broad light detection spectrum ranging from 400 to 900 nm and impressive self-powered characteristics. At 0 V bias, the device exhibits an on/off current ratio of approximately 1.3 × 106. It achieves a commendable detectivity of 5.7 × 1013Jones as subjected to a 0.8 V bias potential, outperforming both bare TiO2and Bi2O3/TiO2photoelectrochemical devices. Moreover, the Bi2S3/Bi2O3/TiO2photoelectrode film shows great promise in pollutant decomposition, achieving nearly 97.7% degradation efficiency within 60 min. The appropriate band energy alignment and the presence of an internal electric field at the interface of the Bi2S3/Bi2O3/TiO2film serve as a potent driving force for the separation and transport of photogenerated carriers. These findings suggest that the Bi2S3/Bi2O3/TiO2heterojunction film could be a viable candidate as a photoelectrode material for the development of high-performance photoelectrochemical optoelectronic devices.
研究领域:
光电化学
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材料科学
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纳米技术
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光电子器件
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环境工程
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DOI
PubMed
高影响因子
Small Methods
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2024
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IF 10.7
Jingze Yang,Dong Lin,Yushan Chen,Tiejun Li,Jing Liu
Solution processing has emerged as a promising technique for the fabrication of oxide thin-film transistors (TFTs), offering advantages such as low cost, high throughput, and exceptional compositional control. However, achieving reasonable electrical properties typically demands high annealing temperatures in the fabrication process. In addressing this challenge, a novel combination strategy is proposed that involves integrating the H 2 O 2 inducement technique with infrared (IR) irradiation annealing. The study investigates the effects of precursors and IR irradiation annealing temperatures on the electrical properties of In 2 O 3 TFTs. It is found that H 2 O 2 can help accelerate the decomposition of organic residues, while IR irradiation annealing could enhance the film densification. By employing the proposed strategy, metal oxide TFTs consisting of a Zr-Al-O dielectric fabricated at 230 °C and an In 2 O 3 channel layer fabricated at 185 °C demonstrated high performance with field-effect mobility = 31.7 cm 2 V −1 ·s −1 , threshold voltage = 1.3 V, subthreshold swing = 0.13 V per decade, and on-to-off current ratio = 1.1 × 10 5 . This work demonstrates the proposed combinational strategy is a general method to fabricate not only metal oxide semiconductors but also dielectrics.
研究领域:
材料科学
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半导体器件
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薄膜技术
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DOI
高影响因子
EUROPEAN POLYMER JOURNAL
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2020
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IF 3.862
Minchao Gu,Zhizheng Zhao,Jiaxuan Liu,Gang Liu,Bin Zhang,Mohamed E. El-Khouly,Yu Chen
Strong demand has been raised for the lightweight, wearable and flexible electronic devices such as wearable computers, paper-like E-readers and epidermal electronics. By using MWNTs-PhBr as a key one dimensional template, novel MWNTs (multi-walled carbon nanotubes) covalently functionalized with poly[(1,4-diethynyl- benzene)- alt -9,9-bis-(4-diphenylaminophenyl)fluorene] (PDDF- g -MWNTs), in which the weight percentage of MWNTs is about 22.74, were successfully synthesized. The as-prepared flexible electronic device with a configuration of Al/PDDF- g -MWNTs/ITO-coated polydimethylsiloxane shows typical nonvolatile rewritable memory performance, with a higher ON/OFF current ratio of more than 10 4 , a switch-on voltage of +2.07 V and a switch-off voltage of −2.45 V. With increasing the film thicknesses, the ON/OFF current ratio of the device was changed from 1 × 10 4 (80 nm) to 2 × 10 4 (100 nm) to 4 × 10 4 (130 nm). Both the switch-on and switch-off voltages almost kept unchanged even if the film thickness was increased from 80 to 130 nm. Upon bending and stretching, the corresponding electronic device still shows good stability and reliability. Electrons dominate the conduct process in PDDF- g -MWNTs during the operation of the device.
研究领域:
材料科学
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纳米技术
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电子学
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柔性电子
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存储器器件
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DOI
高影响因子
CHEMPHYSCHEM
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2025
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IF 2.2
Panpan Zheng,Yiran Xu,Long Li,Yang Shen,Tingting Yang,Ying Song,Xijia Yang
Graphical The metal-porphyrin-modified hyperbranched polyimide material achieves flexible resistive memory with low operating voltage and a high ON/OFF ratio, exhibiting both WORM and SRAM characteristics. Polymer resistive random-access memory (RRAM) holds great promise for flexible wearable electronics and artificial intelligence, yet its development is hindered by chain entanglement and intermolecular interactions, leading to processing challenges, high operating voltages, and unstable switching parameters. Herein, metal-porphyrin-terminated hyperbranched polyimides (ATPP@HBPI, (Zn)ATPP@HBPI, and (Cu)ATPP@HBPI) were synthesized. The hyperbranched structure mitigates intermolecular interactions, while ionic doping modulates conductivity, and the synergistic effect of ions and electrons optimizes resistive switching behavior. Devices based on ATPP@HBPI and (Cu)ATPP@HBPI exhibited nonvolatile write-once-read-many (WORM) characteristics, whereas (Zn)ATPP@HBPI displayed volatile static random-access memory (SRAM) features. The devices demonstrated threshold voltages of –1.88 to –2.60 V and ON/OFF current ratios of 10 4 –10 5 . Mechanistic analysis revealed that nonvolatile switching is dominated by carrier trapping, while the Zn “bridge” effect enables volatile behavior via dynamic charge balance. This study provides a new material platform and mechanistic insight for advancing high-density flexible organic memory devices toward practical applications.
研究领域:
材料科学
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有机电子学
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存储器件
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聚合物化学
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柔性电子
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产品关联
DOI
PubMed
高影响因子
BIOELECTROCHEMISTRY
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2024
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IF 4.8
Hong Liu,Junxin Chen,Jin Hu,Jiajun Song,Peng Lin
Accurate, convenient, label-free, and cost-effective biomolecules detection platforms are currently in high demand. In this study, we showcased the utilization of electrolyte-gated InGaZnO field-effect transistors (IGZO FETs) featuring a large on-off current ratio of over 10 6 and a low subthreshold slope of 78.5 mV/dec. In the DNA biosensor, the modification of target DNA changed the effective gate voltage of IGZO FETs, enabling an impressive low detection limit of 0.1 pM and a wide linear detection range from 0.1 pM to 1 μM. This label-free detection method also exhibits high selectivity, allowing for the discrimination of single-base mismatch. Furthermore, the reuse of gate electrodes and channel films offers cost-saving benefits and simplifies device fabrication processes. The electrolyte-gated IGZO FET biosensor presented in this study shows great promise for achieving low-cost and highly sensitive detection of various biomolecules.
研究领域:
生物传感器
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材料科学
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纳米技术
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生物医学工程
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电子学
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产品关联
DOI
PubMed
高影响因子
Nano Energy
·
2023
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IF 17.6
Tao Wang,Daming Zheng,Karol Vegso,Nada Mrkyvkova,Peter Siffalovic,Xiaocong Yuan,Michael G. Somekh,Laurent Coolen,Thierry Pauporte,Feng Fu
Metal halide perovskites are attracting increasing attention as photodetectors (PDs) materials due to their excellent photoelectric properties. However, integrating perovskite to realize high-resolution perovskite pixel arrays remains critical to enable practical devices. Herein, we demonstrate a high-responsivity and stable 10 × 10 flexible PDs array based on formamidinium-based quasi-2D Ruddlesden-Popper (BA) 2 FAPb 2 I 7 (n = 2) (BA= butylammonium, C 4 H 9 NH 3 + ) perovskite elements for image sensing. The high-performance (BA) 2 FAPb 2 I 7 arrays are synthesized on a polyethylene terephthalate (PET) flexible substrate , on a large scale, high quality, and controllable manner by introducing Au nanoparticles to enhance film quality upon the annealing process and recrystallization by applying formamidinium chloride (FACl) post-treatment to reduce perovskite film defects, combined with an innovative SiO 2 -assisted hydrophilic and hydrophobic surface treatment strategy. The prepared flexible PDs arrays show excellent optoelectronic properties with high responsivity (5.9 A W −1 ), a detectivity of 8.2 × 10 12 Jones, large on/off current ratio (up to 3 × 10 4 ), ultimate response speed (12.8 μs/10.1 μs), and wide spectral response range. In addition, the device shows outstanding mechanical stability under severe bending (θ = 120°) and excellent folding durability after thousands of bending cycles. It also exhibits excellent environmental stability with only a slight degradation of photoresponse after 100 days of storage under the ambient environment. Finally, the integrated flexible PDs arrays can be used as an effective visible light image sensor with good spatial resolution, paving a multifunctional and competitive way for future wearable sensors and artificial vision systems. One-sentence summary Low-dimensional halide perovskite layers pixelized on a polyethylene terephthalate (PET) flexible substrate provide high performance photodetectors.
研究领域:
材料科学
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光电子学
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纳米技术
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成像技术
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可穿戴设备
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）