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MATERIALS CHEMISTRY AND PHYSICS · 2022 · IF 4.778

Multilevel halide perovskite memristors based on optical & electrical resistive switching effects

Zehan Liu,Pengpeng Cheng,Yongfei Li,Ruyan Kang,Jian Zhou,Jia Zhao,Zhiyuan Zuo

With the aim of addressing the growing challenge of approaching the end of Moore's law and von Neumann bottleneck, the evolution of neuromorphic computing based on memristors that emulate the behaviors of the brain has attracted great attention. Organic-inorganic hybrid lead halide perovskites with inherent hybrid ionic-electronic conduction ability have been proposed as promising candidates for memristors to replace traditional charge-based memory. Here we propose MA 0.85 Cs 0.15 PbI 3 memristors with high surface crystallinity and stable operation in the atmospheric environment by mixing inorganic cation Cs + and organic cation MA + . The prepared memristors present excellent resistive switching performances including low operation voltage, high ON/OFF ratio, stable endurance, long retention, and robustness under ambient condition. Besides that, four distinct resistance states have been obtained in the above devices by modifying the operation voltages. Moreover, the resistance switching processes can be controlled both by electrical field and light illumination. Finally, this research provides utilization potentiality in the optical and electrical two-dimension controlled multilevel information devices with a total of five stable resistance states. The present work would offer an effective way to develop multifunctional high-density data-storage applications by storing multiple resistance states in a single unit cell.

研究领域: 材料科学 · 纳米电子学 · 凝聚态物理 · 信息存储技术 · 类脑计算
✓ 已验证 DOI 高影响因子
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Materials Chemistry Frontiers · 2022 ·Vol. 6 ·期 10 ·1292-1300 · IF 8.683

High temperature hybrid perovskite multifunctional switching materials constructed through precise molecular design

Yueyue He,Zhuo Chen,Xiaogang Chen,Xian-Ming Zhang,Dongying Fu

Organic–inorganic hybrid perovskite (OIHP) multifunctional molecular switching materials have been widely studied as excellent supplements to the conventional all-inorganic perovskites due to their structural diversity and property adjustability. However, considering their practical application, the phase transition temperature (Tp) of the system is a crucial evaluation standard and meanwhile it remains an arduous challenge to construct phase transition materials with three kinds of switching characteristics. Therefore, the design of high Tp multifunctional switching materials is a huge task. Herein, we have reported a chiral OIHP multifunctional semiconductor 2 ([(R)-N-fluoroethyl-3-quinuclidinol]PbBr3) with dielectric switching, nonlinear switching and ferroelastic switching characteristics and an ultrahigh Tp of 498 K, which is obtained from compound 1 ([(R)-N-ethyl-3-quinuclidinol]PbBr3) with a Tp of 445 K through the strategy of H/F substitution. The substitution of F atoms for H atoms not only changes the coordination environment of Pb, but also increases the molecular interactions due to the stronger electronegativity of the F atoms, which raises the barrier of rotation of the fluorinated organic cations, (R)-N-fluoroethyl-3-quinuclidinol, and finally leads to a remarkable increase in Tp. Ultimately, through accurate molecular design, the Tp of compound 2 has been increased by 53 K and compound 2 exhibits three kinds of switching characteristics, which also makes it a superior switching material for practical application.

研究领域: 材料科学 · 化学 · 物理学
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ADVANCED FUNCTIONAL MATERIALS · 2023 ·Vol. 33 ·期 28 ·2214544 · IF 19

Unparalleled Dielectric-Switching Effects Caused by Dual Polarization Synergy

Yutie Gong,Jiayu Zhao,Zhenzhen Li,Jing Huang,Yang Zhang,Lijie Dong,Chuanxi Xiong,Ming Jiang

Dielectric switching materials are prospective candidates for smart electronic/electrical applications, and high dielectric switching ratios are crucial for their practical applications. However, the substantial improvement of the dielectric switching ratio is limited by the available dielectric switching mechanisms, and obtaining high dielectric switching ratios is a major challenge. Here, an unparalleled dielectric switching effect is reported in a water-in-oil emulsion system, caused by dual polarization synergy below the dielectric transition temperature in concert with suppression of the electrode polarization above the dielectric transition temperature. The synergistic dielectric switching effect of interfacial polarization and electrode polarization endows the emulsion with unprecedentedly high dielectric switching ratios. The highest room temperature dielectric switching ratio of this emulsion system up to 2.86 × 10 6 at 20 Hz, is four orders of magnitude higher than the highest switching ratio reported so far. The unparalleled high dielectric switching ratio, reliable cycle stability, good frequency adaptability, and satisfactory scalability make the inorganic salt solution/octadecane emulsions potentially excellent candidates for high-sensitivity room-temperature smart switching or sensing devices.

CAS / MDL: 112945-52-5
研究领域: 材料科学 · 电气工程 · 纳米技术
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NANO · 2017 · IF 1.025

A Novel Fluorescent Nanoswitch Based on Carbon Dots for Sensitive Detection of Hg2+ and I−

Xiqing Liu,Xiao Wei,Yeqing Xu,Hongji Li,Kai Lu,Kun Wang,Yongsheng Yan

In this paper, a novel fluorescent nanoswitch based on carbon dots (CDs) was developed for the sensitive and selective determination of Hg 2 + and I − . The CDs were obtained by simple hydrothermal process and had a strong fluorescence emission at 440 nm. The fluorescence of the CDs can be selectively quenched by Hg 2 + ion, and then the I − was added into the system, which can interact with Hg 2 + and recover fluorescence of the CDs. Under optimal conditions, the quenching fluorescence intensity on addition of Hg 2 + has obtained a satisfactory linear relationship covering the linear range of 0–50 μ M with the linear relationship ( R 1 2 = 0 . 9 9 9 1 ), and the limit of detection is 0.047 μ M. The additions of I − could lead to the fluorescence intensity of the solution of CDs and Hg 2 + (50 μ M) recover rapidly, which is linearly related ( R 2 2 = 0 . 9 9 5 7 ) to the concentration of I − in the range from 0 to 70 μ M, the detection limit for I − was calculated to be 0.084 μ M. Moreover, the developed method to detect Hg 2 + and I − was evaluated in real examples, and the fluorescence switching can sensitively and selectively detect Hg 2 + and I − over some potentially interfering ions, the recoveries were up to 97.8–107.0% and 96.7–106.6%, respectively.

研究领域: 分析化学 · 环境科学
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CHEMICAL ENGINEERING SCIENCE · 2019 · IF 3.372

1-Hydroxyethylidene-1,1-diphosphonic acid used as pH-dependent switch to depress and activate fluorite flotation I: Depressing behavior and mechanism

Jianjun Wang,Wenheng Li,Zihan Zhou,Zhiyong Gao,Yuehua Hu,Wei Sun

Fluorite is usually separated from calcite by froth flotation method using large amounts of sodium silicate depressant, which can cause trouble in the loss of fluorite and wastewater treatment. In this study, green and low-cost 1-hydroxyethylidene-1,1-diphosphonic acid (HEDP or H 4 L) was used as pH-dependent switch to initially depress fluorite for calcite pre-removal at pH 6.0, and then activate fluorite for further upgrading fluorite concentrate at pH 8.0. The depressing behavior and mechanism were reported in this work. H 2 L 2− was the dominant form of HEDP, and a stronger chemical adsorption of H 2 L 2− on fluorite hindered the subsequent adsorption of sodium oleate (NaOL), while that of the calcite showed the opposite result. Two active O atoms in H 2 L 2− could well match in interatom distance with two Ca sites on fluorite to form Ca-H 2 L complexes. The pH-dependent switch reagent reported here may open a new avenue for more selective separation among mixed mineral systems.

研究领域: 矿物加工工程 · 环境科学
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Nanomaterials · 2021 ·Vol. 11 ·期 10 ·2705 · IF 5.076

Excellent Bipolar Resistive Switching Characteristics of Bi4Ti3O12 Thin Films Prepared via Sol-Gel Process

He-Chun Zhou,Yan-Ping Jiang,Xin-Gui Tang,Qiu-Xiang Liu,Wen-Hua Li,Zhen-Hua Tang

Herein, Bi4Ti3O12(BIT) ferroelectric thin films were fabricated into Au/BIT/LaNiO3/Si structures to demonstrate their memristor properties. Repeatable and stable bipolar resistive switching (RS) characteristics of the device are first reported in this work. The switching ratio of the device annealed in air reached approximately 102at 0.1 and −0.1 V. The RS performance was not significantly degraded after 100 consecutive cycles of testing. We also explored the factors affecting the RS behavior of the device. By investigating the RS characteristics of the devices annealed in O2,and in combination with XPS analysis, we found that the RS properties were closely related to the presence of oxygen vacancies. The devices annealed in air exhibited a markedly improved RS effect over those annealed in O2. According to the slope fitting, the conduction mechanism of the device was the ohmic conduction and space charge limited current (SCLC). This study is the first to successfully apply BIT ferroelectric films to the RS layers of memristors. Additionally, a theory of conductive filaments is proposed to adequately explain the relationship between RS behavior and oxygen vacancies, providing meaningful inspiration for designing high-quality resistive random access memory devices.Keywords:Bi4Ti3O12;resistive switching;oxygen vacancies;conductive filaments;thin film

研究领域: 材料科学 · 电子学 · 纳米技术
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ADVANCED MATERIALS · 2022 ·Vol. 34 ·期 9 ·2108313 · IF 32.086

High-Performance Memristors Based on Ultrathin 2D Copper Chalcogenides

Lei Yin,Ruiqing Cheng,Yao Wen,Baoxing Zhai,Jian Jiang,Hao Wang,Chuansheng Liu,Jun He

Copper chalcogenides represent a class of materials with unique crystal structures, high electrical conductivity, and earth abundance, and are recognized as promising candidates for next-generation green electronics. However, their 2D structures and the corresponding electronic properties have rarely been touched. Herein, a series of ultrathin copper chalcogenide nanosheets with thicknesses down to two unit cells are successfully synthesized, including layered Cu 2 Te, as well as nonlayered CuSe and Cu 9 S 5 , via van der Waals epitaxy, and their nonvolatile memristive behavior is investigated for the first time. Benefiting from the highly active Cu ions with low migration barriers, the memristors based on ultrathin 2D copper chalcogenide crystals exhibit relatively small switching voltage (≈0.4 V), fast switching speed, high switching uniformity, and wide operating temperature range (from 80 to 420 K), as well as stable retention and good cyclic endurance. These results demonstrate their tangible applications in future low-power, cryogenic, and high temperature harsh electronics.

研究领域: 材料科学 · 纳米技术 · 电子学
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Crystals · 2022 ·Vol. 12 ·期 4 ·558 · IF 2.67

Growth and Passive Q-Switching Application of Cr:TiTe3O8 Crystal

Chengcheng Li,Zeliang Gao,Zhongjun Zhai,Shuai Ye,Youxuan Sun

A Cr4+-doped TiTe3O8crystal with dimensions up to 21 mm × 21 mm × 11 mm was grown successfully by the top-seeded solution growth method. A high-resolution X-ray diffraction experiment showed that the full width at half-maximum of the rocking curve was 41.90″. Energy-dispersive spectrometry (EDS) and X-ray fluorescence spectroscopy (XRF) proved that Cr4+ions have been doped into the TiTe3O8crystal with molar percentage of 4.9%. The Cr:TiTe3O8crystal exhibited an absorption range from 995 to 1565 nm, which is suitable for passive Q switch at 1064 nm. Then, a passive Q-switching solid-state laser operating at 1064 nm was realized using a Cr:TiTe3O8crystal as the saturable absorber. The maximum laser pulse energy is calculated to be 0.7 μJ, and the maximum peak power reaches 0.7 W.Keywords:Cr:TiTe3O8;passive Q-switching;top seed solution method

研究领域: 材料科学 · 光学
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ADVANCED FUNCTIONAL MATERIALS · 2018 ·Vol. 28 ·期 49 ·1800775 · IF 13.325

Electrowetting-Induced Stiction Switch of a Microstructured Wire Surface for Unidirectional Droplet and Bubble Motion

Yufeng Yan,Zhenyan Guo,Xiaofang Zhang,Linlin He,Yan Li,Kesong Liu,Jinhua Cai,Dongliang Tian,Lei Jiang

Directional motion of fluid droplets is attracting considerable research attention. Despite much progress in this field, electrowetting-based stiction switch that drives unidirectional transport of an underwater oil droplet or air bubble on a wire surface is still a challenge to realize. Here, a strategy to collect and unidirectionally transport an underwater oil droplet or air bubble on a porous polystyrene (PS) film-coated copper wire surface through the combination of electrowetting-induced stiction switch and buoyancy is demonstrated. The porous PS film-coated copper wire fabricated by the breath figure method at a relative humidity of 75% can catch and hold an underwater oil droplet or air bubble without applied voltage. With increasing applied voltage, the stiction of the underwater oil droplet or air bubble on the porous PS film surface weakens because water increasingly wets the film surface. The underwater oil droplet or air bubble can move unidirectionally on the porous PS film-coated wire surface upward or downward at a voltage larger than its critical voltage according to whether its density is lower or higher than that of water. This work should aid the development of devices displaying electrowetting-based changes for use in fluid collection, manipulation, unidirectional transfer, release, and removal.

研究领域: 材料科学 · 流体物理
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Journal of Materials Chemistry C · 2020 ·Vol. 8 ·期 40 ·14155-14163 · IF 7.059

High performance flexible memristors based on a lead free AgBiI4 perovskite with an ultralow operating voltage

Haibo Ye,Bo Sun,Ziyi Wang,Zhiyong Liu,Xuning Zhang,Xianhua Tan,Tielin Shi,Zirong Tang,Guanglan Liao

Organic–inorganic halide perovskite materials exhibit excellent memristive properties, such as high ON/OFF ratio and low switching voltage. However, the toxicity of lead and poor stability strictly limit their further commercial applications. Herein, a high-quality nontoxic and stable AgBiI4 perovskite film is successfully synthesized via a low-temperature dynamic hot casting method, and resistive switching (RS) memory devices based on AgBiI4 are reported for the first time. The RS memory devices with the ITO substrate exhibit typical bipolar nonvolatile memory behaviors with an ultralow operating voltage (≈0.16 V), high ON/OFF ratio (≈104), reversible RS by pulse voltage operation (>700) and long data retention (>104 s), superior to those of most of the other perovskite-based memory devices. Furthermore, a high performance flexible nonvolatile resistive switching (RS) memory device based on a AgBiI4 perovskite with a PEN substrate is fabricated. The flexible device also displays good stability under repeated bending tests (>1000 cycles). By analyzing the current–voltage responses, and the transmission electron microscopy, energy dispersive spectroscopy and X-ray photoelectron spectroscopy results, we propose a mechanism involving conducting filaments formed by Ag cations to describe the RS behavior of the Ag/PMMA/AgBiI4/ITO device. Our work demonstrates that AgBiI4 is promising for nonvolatile memory devices and paves the way for realizing low-power consumption flexible nonvolatile memory devices.

CAS / MDL: 68-12-2
研究领域: 材料科学 · 电子工程 · 纳米技术
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SENSORS AND ACTUATORS B-CHEMICAL · 2020 · IF 7.1

Mn2+-mediated magnetic relaxation switching for direct assay of ctDNA in whole blood via exonuclease III assisted amplification

Yunyun Hu,Xin Guo,Peilin Gu,Qin Luo,Yang Song,Erqun Song

Since circulating tumor DNA (ctDNA) has been regarded as a promising noninvasive biomarker for early cancer screening, cancer condition monitoring, and prognosis evaluation, the accurate and simple detection of ctDNA has been extensive explored. Up to now, there is still a lot of space for following-up the assay of ctDNA, especially simply direct analysis ctDNA in complex biological samples such as blood sample. In this work, we develop a Mn 2+ -mediated magnetic relaxation switching (MRS) assay for direct and simple detection of ctDNA via exonuclease III-assisted signal amplification. In the presence of target ctDNA, exonuclease III selectively cleaves the hybridization complex of between ctDNA and its complementary DNA labeled with magnetic beads and alkaline phosphatase (MB 1000 -DNA 1 -ALP) to release ALP and ctDNA, the former further generating Mn 2+ and causing transverse relaxation time signal change while the later recycling to amplify the signal. The combination of efficient recognition of ctDNA, enzyme-assisted amplification, and the MRS assay could achieve direct and specific detection of ctDNA with a detection limit of 340 pM. In our opinion, this is the first successful direct detection of ctDNA in whole blood sample without ctDNA extraction from biospecimen, which make the assay for ctDNA much accurate and timely since a short half-life (2 h) of ctDNA in blood. The as-proposed method for ctDNA assay in this study shows potential tracking the evolution of tumor timely and serving as a liquid biopsy for diagnosis.

CAS / MDL: 1313-13-9 51805-45-9
研究领域: 生物医学工程 · 分子诊断学 · 癌症研究
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APPLIED SURFACE SCIENCE · 2022 · IF 7.392

Host-guest synergy of CH3NH3PbBr3@Ln-MOFs enabling tunable green luminescence and switchable memory

Liming Zhao,Carl Redshaw,Kuixing Ding,Pengyue Zhang,Bin Chen,Zhirong Chen,Jiugang Hu,Haohong Li

Metal organic frameworks (MOFs) contain ordered pores capable of encapsulating varied types of guests and provide a platform to expand the flexibility and versatility of the host-guest composites. Herein, by encapsulating CH 3 NH 3 PbBr 3 NP S into Ln-MOFs (Ln = La, Nd, Pr, Sm), four CH 3 NH 3 PbBr 3 @Ln-MOFs host-guest composites were fabricated and served as a bifunctional platform. The temperature-dependent luminescence properties of the CH 3 NH 3 PbBr 3 @Ln-MOFs were explored and the results revealed their tuneable green luminescence performance. In particular, the CH 3 NH 3 PbBr 3 @Sm-MOF exhibits a variety of colours from green to blue to purple and an excellent quantum yield of 0.98. The photocurrent responses and theoretical calculations reveal the enhancement mechanism of CH 3 NH 3 PbBr 3 on charge-hole separation owing to its unique host-guest synergy. Moreover, the CH 3 NH 3 PbBr 3 @Sm-MOF exhibits the excellent electrical bi-stability with a high ON/OFF ratio of 10 4 . Hence, the CH 3 NH 3 PbBr 3 @Ln-MOFs host-guest composites are promising candidates for a new generation of photovoltaic, light-emitting, and switching memories devices.

研究领域: 材料科学 · 光电子学
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