ECS Journal of Solid State Science and Technology
·
2024
·Vol. 13
·期 8
·084007
·
IF 1.8
Lianfeng Hu,Yingjie Wang,Qiancheng Sun,Chun-Feng Hu,Haijun Cheng,Xin-Ping Qu
The impact of ceria abrasives on the chemical mechanical polishing (CMP) of molybdenum (Mo) films was examined in alkaline slurries utilizing H2O2 as an oxidizer and ceria abrasives. The static etching rate (SER) decreased after the addition of ceria abrasives to the alkaline H2O2-based slurry, while the removal rate (RR) increased except for that of the slurry at pH 9. At pH 9, following the etching of the Mo film in an H2O2 solution with ceria, the surface became coated with MoO3 and Ce2Mo4O15 species. These species originated from the interaction between ceria, H2O2, and molybdic acid. The Ce2Mo4O15 particles envelop the MoO3 surface, thereby preventing the etching of loose MoO3 and hindering further oxidation of Mo to MoO3. This process effectively reduces the RR of Mo. Utilizing ceria slurries at appropriate pH values facilitates achieving a smooth surface with a reasonable RR.
研究领域:
材料科学
·
化学工程
✓ 已验证
产品关联
DOI
高影响因子
COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS
·
2024
·
IF 4.9
Fukun Li,Yang Bai,HaiXiang Hu,Guanbo Qiao,Lingzhong Li,Feng Zhang,Xuejun Zhang
Pitch-based tools are integral to computer-controlled optical surfacing (CCOS) for polishing fused silica but face limitations such as low material removal rates (MRR) and challenges in achieving atomic-level smoothing while ensuring environmental sustainability. While chemical mechanical polishing (CMP) excels in processing planar surfaces, it struggles with complex freeform geometries. CCOS addresses this gap with specialized tool head designs that enable precise machining of intricate surfaces. This study introduces an eco-friendly CeO 2 -based polishing slurry suited for CCOS with pitch tools. By incorporating green reagents, such as polyethylene glycol (PEG) and ethylene glycol (EG), and minimizing harmful chemical usage, the slurry achieves significant breakthroughs in performance. Experimental results reveal a surface roughness (Sa) of 0.075 nm, meeting atomic-level smoothing standards, alongside an MRR of 40.5 μ m /h, marking substantial improvements over traditional methods. Physicochemical analyses of the CeO 2 abrasives, including particle size, morphology, and Ce element content, revealed that abrasives with sharp edges and high Ce content are key factors for obtaining high surface quality and MRR. Molecular dynamics (MD) simulations highlight the synergistic effects of the components, optimizing chemical-mechanical interactions to enhance surface quality. These findings demonstrate the potential of green polishing technologies in advancing the precision machining of fused silica, particularly for complex geometries. The study provides a sustainable and high-performance solution for achieving atomic-level smoothing, paving the way for broader applications in precision optics.
研究领域:
材料科学
·
光学工程
·
环境科学
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
·
2024
·
IF 2.5
Xiangyu Yuan,Yebing Tian,Cheng Qian,Shadab Ahmad,Zhen Ma,Ling Li,Zenghua Fan
Magnetorheological shear thickening polishing (MRSTP) has the dual effect of shear thickening and magnetization enhancement, thereby enhancing polishing efficiency. MRSTP fluids (MRSTPFs) were prepared using polyethylene glycol (PEG), silicon dioxide (SiO 2 ), carbonyl iron particles (CIPs), and diamond micro-abrasive particles. MRSTPFs containing diamond particles of various sizes were prepared for rheological tests. A rheological hypothesis was proposed regarding the development of CIPs chains and the ability to aggregate PEG and SiO 2 . Rheological tests results indicated that each sample exhibited shear thickening and magnetization enhancement effects under the magnetic field and shear rate. The shear thickening effect decreased with increasing magnetic flux density, while the overall viscosity and shear stress increased. As the magnetic flux density increased from 0 mT to 112 mT, the thickening ratio of MRSTPFs containing 3 μm diamond particles decreased from 18.94 to 1.37, but the peak viscosity increased from 5.208 Pa·s to 3639 Pa·s. The thickening ratios of MRSTPFs with different abrasive sizes showed a slight variation from 0.11 to 1.76 at the same magnetic flux density of 22 mT, 45 mT, 68 mT, 90 mT, and 112 mT, respectively. It demonstrated that the diamond particle size did not have a significant effect on the rheological properties of MRSTPFs. The correctness of the hypothesis was confirmed. The storage modulus of MRSTPFs exceeded the loss modulus at non-zero magnetic flux density, indicating that the MRSTPFs had become semi-solid. The microscopic mechanism showed that the rheological characteristics were determined by the evolution of the chain structure of CIPs and the binding ability of PEG to SiO 2 . This study provided valuable insights into exploring mechanisms of MRSTPFs and demonstrating the potential application of MRSTP.
研究领域:
材料科学
·
流变学
✓ 已验证
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2021
·
IF 3.927
Nengyuan Zeng,Chenwei Wang,Chong Luo,Hongdong Zhao,Yuling Liu,Wantang Wang,Tengda Ma
This article proposed an improvement plan for the slurry to reduce the dishing caused during copper chemical mechanical polishing (CMP) of the interconnect structure. According to the difference in the pressure between the concave and convex parts of the copper film in the high-hardness polishing pad, polishing slurries were designed with a distinct difference in the polishing removal rate under high and low platen pressures to improve their planarization efficiency. 2 wt% GLY (glycine) and 1 wt% H 2 O 2 can provide a chemical dissolution effect, adding 0.1% TAZ (1,2,4-triazole) to slow down the corrosion mainly for the recession, by adjusting the slurry pH to 7. The polishing results showed that the slurry had a high copper removal rate (6772 Å/min) at high pressure (3.0 psi) and a much lower removal rate (3273 Å/min) at low pressure (1.2 psi). The pattern wafer polished with this slurry obtained relatively low dishing. The other comparison groups showed slight differences in copper removal rate at high and low pressure and a deeper dishing of the polished pattern wafer. In this paper, based on the analysis of static dissolution experiments, electrochemical experiments, and XPS experiments of copper films in different slurries, the chemical reaction mechanism of copper films in the solution system of GLY and H 2 O 2 was studied at different pH values. In addition, the inhibition mechanism of TAZ on the copper surface at different slurry pH values was proposed, including the properties of the TAZ molecule adsorption film on the copper surface, the uniformity of the surface coverage, and the thickness of the passivation layer . The results can reflect the polishing results to a certain extent despite some deviations, but it can also be used as a more reasonable argument to explain the optimization scheme of the slurry proposed in this article.
研究领域:
材料科学
·
微电子制造
·
表面化学
·
半导体工艺
·
腐蚀与防护
✓ 已验证
DOI
高影响因子
Materials Science and Engineering B-Advanced Functional Solid-State Materials
·
2025
·
IF 4.6
Zhe Liang,Ru Wang,Yu Zhu,Xuhua Chen,Zhanjie Du,Tao Zheng,Yanwei Dong,Yang Chen,Peng Yang,Yunhui Shi
Polishing of Ta barrier layer by through-silicon-via (TSV) has a low removal rate. Large particles with diameters greater than 0.5 μm tend to form in the slurry, which complicates the achievement of an atomic-level planarized wafer surface during chemical mechanical polishing (CMP) while also maintaining a high removal rate of Ta. To address this challenge, this paper developed a novel environmentally friendly surfactant for the Ta barrier layer polishing, composed of carrageenan (CG) and polyvinyl pyrrolidone (PVP). By contact angle measurement, electrochemistry, XPS, FESEM, slurry Zeta potential stability and particle size test, the synergistic mechanism of carrageenan and polyvinyl pyrrolidone was analyzed, and the comparative analysis of the surface quality of Cu and Ta was conducted after CMP under varying conditions. The findings reveal that slurry’s composition was modified by the addition of CG and PVP, the removal rate ratio of Ta to Cu achieves a 2:1 ratio under the conditions of 10 wt% SiO 2 , 0.3 wt% H 2 O 2 , 1.5 wt% guanidine phosphate (GP) and pH 9, surface roughness indicators, including Sq and Ra, of Cu and Ta both reach sub-nm level. The surface non-uniformity of Cu and Ta decreased to 1.7 % and 1.8 %. This indicates that the synergistic effect of CG and PVP in the slurry can obtain a better wafer surface while ensuring a high level of Ta removal efficiency.
研究领域:
材料科学
·
化学工程
·
微电子学
·
表面工程
·
纳米技术
✓ 已验证
产品关联
DOI
高影响因子
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
·
2025
·
IF 4.6
Zheng Wu,Changxin Dong,Xinhuan Niu,Jiakai Zhou,Chao He,Xinjie Li,Bin Hu,Jiahui Li
As technology nodes shrink below 10 nm, stricter demands are required for the one-step polishing of copper (Cu) films in ruthenium (Ru)-based Cu interconnects: a high Cu removal rate (RR) and a near-zero Ru RR. In this work, an eco-friendly slurry was newly formulated by combining hydroxyethylethylene diphosphonic acid (HEDP) and phytic acid (PA), both containing phosphate groups, to enhance corrosion inhibition and polishing performance during Cu/Ru CMP. Polishing and electrochemical experiments demonstrated that the synergistic inhibitors achieved a corrosion inhibition efficiency of 96 % for Cu. Under optimized conditions, the material removal rates (MRRs) of Cu and Ru reached 5432 Å/min and 10 Å/min, respectively, with a maximum removal rate selectivity (RRS) of 543:1 and surface roughness ( Sqs ) of 0.76 nm and 0.53 nm. Contact angle, coefficient of friction (COF), Ultraviolet–visible spectroscopy (UV–Vis), X-ray photoelectron spectroscopy (XPS) analyses confirmed the formation of a protective passivation film on Cu/Ru surfaces from both mechanical and chemical perspectives. Theoretical calculations identified the reactive sites of the inhibitors and simulated their adsorption behavior in a CMP environment, revealing that the synergistic inhibitors exhibited the highest adsorption energy. Without the use of surfactants, the multifunctional synergistic inhibitors improved surface quality through lubrication and passivation effects while reducing reagent consumption. This work provides both theoretical and practical guidance for the design of green and efficient CMP slurries in advanced semiconductor manufacturing.
✓ 已验证
产品关联
DOI
高影响因子
JOURNAL OF MOLECULAR LIQUIDS
·
2024
·
IF 5.3
Xier Gong,Jie Wang,Liying Bin,Weirui Chen,Ping Li,Pengran Guo,Zhiliang Chen,Bing Tang
The present study aimed to prepare an aluminum-based nanoflower (Al-NF) adsorbent using wasted aluminum polishing solution as raw materials, which effectively isolated the residues of anti-epidemic related drugs (lopinavir (LPV) and ciprofloxacin (CIP)) from wastewater. A comprehensive characterization approach involving SEM, XRD, BET, TGA, FTIR, and XPS was employed to investigate the adsorption capacity and mechanism of Al-NF towards LPV and CIP. The results revealed that the adsorption process involved both homogeneous and non-homogeneous interactions between the LPV/CIP molecules and the Al-NF surface. According to the Langmuir model calculations, the maximum adsorption capacities of Al-NF for LPV and CIP at 293.15 K were determined to be 32.41 mg/g and 14.43 mg/g, respectively, while their adsorption kinetics followed a pseudo-second-order model more appropriately. Furthermore, the spontaneous exothermic nature of LPV/CIP adsorption on Al-NF was confirmed by thermodynamic analysis. The mechanism investigations indicated that hydrogen bonding, electrostatic interaction, π-π bonding interaction, as well as n-π EDA bonding collectively contributed to the overall adsorption process on the Al-NF surface for both LPV and CIP species. Additionally, the reusability demonstrated by Al-NF highlights its potential as a promising low-cost material for removing anti-epidemic related drug residues from wastewater utilizing industrial hazardous wastes.
研究领域:
环境科学
·
材料科学
·
化学工程
·
废水处理
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）