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Nanomaterials · 2019 ·Vol. 9 ·期 8 ·1062 · IF 4.034

Growth Mechanism of SmB6 Nanowires Synthesized by Chemical Vapor Deposition: Catalyst-Assisted and Catalyst-Free

Yi Chu,Yingjie Xing,Hongqi Xu

SmB6nanowires, as a prototype of nanostructured topological Kondo insulator, have shown rich novel physical phenomena relating to their surface. Catalyst-assisted chemical vapor deposition (CVD) is a common approach to prepare SmB6nanowires and Ni is the most popular catalyst used to initiate the growth of SmB6nanowires. Here, we study the effect of growth mechanism on the surface of SmB6nanowires synthesized by CVD. Two types of SmB6nanowires are obtained when using Ni as the catalyst. In addition to pure SmB6nanowires without Ni impurity, a small amount of Ni is detected on the surface of some SmB6nanowires by element analysis with transmission electron microscopy. In order to eliminate the possible distribution of Ni on nanowire surface, we synthesize single crystalline SmB6nanowires by CVD without using catalyst. The difference between catalyst-assisted and catalyst-free growth mechanism is discussed.Keywords:nanowires;synthesis;CVD;topological insulators;growth mechanism

CAS / MDL: 10361-82-7
研究领域: 材料科学 · 物理学
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Microstructures · 2024 ·Vol. 4 ·期 1 ·N · IF 0

Pressure-induced superconductivity in SnSb2Te4

Yanmei Ma,Hongbo Wang,Ruihong Li,Han Liu,Jian Zhang,Xianyu Wang,Qiang Jing,Xu Wang,Wenping Dong,Jinman Chen,Bingze Wu,Yonghao Han,Dan Zhou,Chunxiao Gao

Owing to their unique compositional and structural characteristics, layered van der Waals solids in binary and ternary chalcogenide families provide a fertile testbed for exploring novel exotic structures and states, e.g., topological insulators and superconductors. Herein, a comprehensive study on the structural variations and correlated electrical transport behavior of SnSb2Te4, a ternary member, has been carried out considering elevated pressures. Under 45.6 GPa, three distinct structural phase transitions have been observed, with strong evidence from the variations of high-pressure X-ray diffraction patterns. The onsets of phase II (monoclinic, C2/m) at 6.3 GPa, phase III (monoclinic, C2/c) at 15.5 GPa, and phase IV (body-centered cubic with substitutional disorder, Im-3m) at 17.2 GPa have been observed owing to the emergence of new diffractions. Based on electrical measurements at low temperature and high pressure conditions, two pressure-induced superconducting states have been distinguished in SnSb2Te4. The first state occurs in the range of 12.3-17.1 GPa. The positive pressure dependence on Tc indicates that the aforementioned state is related to the monoclinic C2/m phase. At > 17.1 GPa, the second superconducting state emerges, with the negative pressure dependence on Tc. It relates to the body-centered cubic solid solution phase, which is characteristic of a substitutional disordered crystal structure. The discovery that the pressure-induced superconductivity in SnSb2Te4 is affected by structural phase transitions under pressure may help understand the universal relationship between the ambient condition topological insulating state and derived superconductivity. Ab initio theoretical calculations reveal that an electronic topological transition takes place at approximately 2.0 GPa, which is featured by the obvious changes in the distribution of electronic density of states near the Fermi level.

研究领域: 凝聚态物理 · 材料科学
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JOURNAL OF ALLOYS AND COMPOUNDS · 2021 · IF 5.316

Pressure-induced superconductivity and structural transitions in topological insulator SnBi2Te4

Ruihong Li,Guangtao Liu,Qiang Jing,Xianyu Wang,Hongbo Wang,Jian Zhang,Yanmei Ma

The materials with topological phases have been a flexible platform for the realization of novel types of quantum matter due to their unique topology protected electron states. Herein, we report a comprehensive structural and electrical transport investigations on a topological insulator, SnBi 2 Te 4 , under high pressures by using diamond anvil cell techniques. Through in situ high pressure synchrotron x-ray diffraction studies, two structural phase transformations have been revealed. The powdered samples of SnBi 2 Te 4 transform from the initial layered quasi-two-dimensional structure (phase I) to a monoclinic C2/m structure (phase II) at about 7.14 GPa, and eventually develop into a site-disordered body centered cubic structure (phase III) at pressures above 18.9 GPa. Modifications of the electronic band structure have been discovered by the in situ high-pressure electrical measurements at low temperatures. It is noteworthy that three distinct pressure induced superconducting states have been observed, one in phase II and two in phase III. In each of the pressure induced superconducting states, the critical temperature Tc decreases with pressure. The maximum value of Tc is obtained in the third superconducting state emerging at the highest pressure range, which is 8.9 K at 22.3 GPa. A deep understanding of the relationship between the pressure induced structure-dependent superconducting states and the ambient-pressure topologically insulating state of SnBi 2 Te 4 may shed light on the universal physical nature that creates topologically insulating or superconducting states.

研究领域: 凝聚态物理 · 材料科学
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LANGMUIR · 2024 · IF 3.7

Electrochemical Platform Based on the Bi2Te3 Family of Topological Insulators for the Detection of SARS-CoV-2 Pathogenic Factors

Yujiu Jiang,Peng Zhu,Jiangyue Bai,Zihang Wang,Xiuxia Li,Shiqi Xu,Chunpan Zhang,Shanshan Li,Tinglu Song,Fan Tan,Zhiwei Wang,Aiqin Luo,Bingteng Xie,Yanbo Yang,Junfeng Han

Accurate and rapid detection of the causative agent of a disease is of great importance in controlling the spread of the disease. This work developed a biosensor with the Bi2Te3 family of topological insulators for detection of the SARS-CoV-2 virulence factor. The Bi2Te3 family is a three-dimensional topological insulator material with topologically protected surface states; the presence of these surface states facilitates charge transfer between the electrode and electrolyte interface. Compared with the detection performance of Bi2Se3, BiSbTeSe2, and a trivial insulator like Sb2Se3, Bi2Te3 exhibits superior characteristics. A Bi2Te3 electrochemical detection platform is utilized to fabricate a sensor that can detect SARS-CoV-2 DNA, RNA, and antigen for label-free target detection. The concentration range of DNA detection by the biosensor using Bi2Te3 is between 1.0 × 10–15 and 1.0 × 10–10 M, and the detection limit can reach 1.41 × 10–16 M. Furthermore, it exhibits excellent selectivity and maintains good stability even after being stored for 14 days. This study provides a new way to apply topological insulator materials in the field of biosensors and use their unique electronic structure to improve the accuracy and speed of disease detection and diagnosis.

CAS / MDL: 1193-02-8
研究领域: 生物医学工程 · 材料科学 · 病毒学
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JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY · 2020 ·Vol. 20 ·期 4 ·2628-2632 · IF 1.134

Fabrication and Electrical Properties of Silver Telluride Nanowires

Gao Yuan,Wang Ka,Song Haizeng,Wu Han,Yan Shancheng,Xu Xin,Shi Yi

As a new topological insulator material, the β-phase silver telluride (Ag2Te) nanowire is a narrow bandgap semiconductor, which is attractive for its excellent properties. In this study, Ag2Te nanowires were synthesized by one-step hydrothermalmethod. The nanowires showed good electrical properties with maximum drain-source voltage of 1.5 V, and the output current was up to 20 μA. The gate voltage has a significant effect on output current for the device. The Ag2Te nanowires will have more extensive and in-depth applications in the fields of optoelectronics and thermoelectricity.

研究领域: 材料科学 · 纳米技术 · 电子工程
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Materials Today Physics · 2024 · IF 10

Topological insulator Bi2Te3 and graphene oxide synergistically enhance the photothermal effect and photocatalytic hydrogen evolution activity

Jingwen Pan,Chenchen Zhao,Dongbo Wang,Jiamu Cao,Bingke Zhang,Donghao Liu,Sihang Liu,Zhi Zeng,Tianyuan Chen,Gang Liu,Shujie Jiao,Zhikun Xu,Xuan Fang,Liancheng Zhao,Jinzhong Wang

Photothermal co-catalysis with the partial conversion of solar energy to thermal energy has the potential to overcome the current bottleneck of realizing efficient photocatalytic hydrogen production with zero artificial energy consumption. However, it is still challenging to design highly efficient photocatalysts that can make use of light and thermal energy synergistically. In this work, we successfully improved the photothermal effect and visible-light-catalyzed hydrogen evolution performance by constructing a novel heterojunction based on the topological insulator Bi 2 Te 3 and graphene oxide (GO) synergistically modified with Zn 0.67 Cd 0.33 S. The photocatalytic hydrogen evolution rate of the 1.1 wt% Bi 2 Te 3 @0.05% GO@Zn 0.67 Cd 0.33 S heterojunctions reached 11.52 mmol/h/g (Apparent Quantum Yield of 21.7%), which was 12.9 times higher than that of pure Zn 0.67 Cd 0.33 S. Furthermore, the hydrogen production rate reached 71.79 mmol/h/g without cooling. The improved photocatalytic activity originated from the synergistic enhancement of visible-light absorption and the systematic enhancement of the photothermal effect by the Bi 2 Te 3 and GO. In addition, the high electrical conductivity of Bi 2 Te 3 and the high proton conductivity of GO not only increased the electron transfer rate but also synergistically mediated the acceleration of the hydrogen generation reaction. A strong built-in electric field is formed between Bi 2 Te 3  and Zn 0.67 Cd 0.33 S, which greatly facilitates the efficient separation of photogenerated carriers . The obtained results illustrate a promising strategy for the development of efficient new photothermal catalysts.

研究领域: 材料科学 · 能源科学
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PHYSICAL CHEMISTRY CHEMICAL PHYSICS · 2019 ·Vol. 22 ·期 2 ·556-563 · IF 3.567

Antiferromagnetic topological insulator MnBi2Te4: synthesis and magnetic properties

Hao Li,Shengsheng Liu,Chang Liu,Jinsong Zhang,Yong Xu,Rong Yu,Yang Wu,Yuegang Zhang,Shoushan Fan

Recently, MnBi2Te4 has been discovered as the first intrinsic antiferromagnetic topological insulator (AFM TI), and it will become a promising material to discover exotic topological quantum phenomena. In this work, we have realized the successful synthesis of high-quality MnBi2Te4 single crystals by solid-state reactions. The as-grown MnBi2Te4 single crystal exhibits a van der Waals layered structure, which is composed of septuple Te–Bi–Te–Mn–Te–Bi–Te sequences as determined by X-ray diffraction and high-resolution high-angle annular dark field scanning transmission electron microscopy (HAADF-STEM). The magnetic order below 25 K as a consequence of A-type antiferromagnetic interaction between Mn layers in the MnBi2Te4 crystal suggests the unique interplay between antiferromagnetism and topological quantum states. Moreover, the transport measurements of MnBi2Te4 single crystals further confirm its magnetic transition. This study on the first AFM TI of MnBi2Te4 will guide the future research on other potential candidates in the MBixTey family (M = Ni, V, Ti, etc.).

研究领域: 材料科学 · 凝聚态物理
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Small · 2022 ·Vol. 19 ·期 2 ·2205353 · IF 15.153

Synthesis of Ultrathin Topological Insulator β-Ag2Te and Ag2Te/WSe2-Based High-Performance Photodetector

Fapeng Sun,Wenting Hong,Xu He,Chuanyong Jian,Qiankun Ju,Qian Cai,Wei Liu

β-Ag 2 Te has attracted considerable attention in the application of electronics and optoelectronics due to its narrow bandgap, high mobility, and topological insulator properties. However, it remains a significant challenge to synthesize 2D Ag 2 Te because of the non-layered structure of Ag 2 Te. Herein, the synthesis of large-size, ultrathin single crystal topological insulator 2D Ag 2 Te via the van der Waals epitaxial method for the first time is reported. The 2D Ag 2 Te crystal exhibits p-type conduction behavior with high carrier mobility of 3336 cm 2 V −1 s −1 at room temperature. Taking advantage of the high mobility and perfect electron structure of Ag 2 Te, the Ag 2 Te/WSe 2 heterojunctions are fabricated via mechanical stacking and show an ultrahigh rectification ratio of 2 × 10 5 . Ag 2 Te/WSe 2 photodetector also exhibits self-driven properties with a fast response speed (40 µs/60 µs) in the near-infrared region. High responsivity (219 mA W −1 ) and light ON/OFF ratio of 6 × 10 5 are obtained under the photovoltaic mode. The overall performance of the Ag 2 Te/WSe 2 photodetector is significantly competitive among all reported 2D photodetectors. These results indicate that 2D Ag 2 Te is a promising candidate for future electronic and optoelectronic applications.

研究领域: 凝聚态物理 · 材料科学 · 纳米电子学 · 光电子学 · 半导体器件 · 二维材料科学
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Journal of Materials Chemistry C · 2021 ·Vol. 10 ·期 4 ·1289-1301 · IF 7.393

Organic rubrene/topological insulator Bi2Se3/SiO2 hybrid heterojunction photodetectors for broadband and ultrafast photodetection application

Sartaj Wali,Qin Yin,Jiao Li,Guoxiang Si,Muhammad Shafi,Junfeng Ren,Hongbin Zhang

Organic–inorganic heterostructures (OIHs) are an emerging topic that has attracted great research enthusiasm due to their unique features for electronic and optoelectronic applications. Although OIHs constructed with topological insulators and organic small molecule semiconductors may have better device performance, this type of heterostructure has rarely been reported, and more research is required to uncover its internal dynamics. Thereby, OIHs based on organic rubrene and inorganic topological insulator Bi2Se3, which were prepared by employing simple physical vapor deposition, were investigated for the first time. Experimental results proved that the crystalline rubrene and topological insulator Bi2Se3 films are promising candidates for fabricating high-performance organic–inorganic heterostructure photodetectors (OIHPDs) accompanied by a broadband photodetection range. The Dirac surface state at the heterojunction interface facilitates the dissociation and transportation of photo-generated carriers. Importantly, the OIHPDs displayed excellent diode characteristics with a current rectifying ratio of 460, a maximum responsivity of 8.85 A W−1, a high detectivity of 3.14 × 1012 Jones, and an ultrafast response speed with τrise (2.1 μs) and τdecay (2.9 μs) under near-infrared light illumination of 1064 nm, respectively. Due to these interesting results, the OIHPDs can be used in many detection fields, and suggest a promising opportunity for novel device application in the future.

CAS / MDL: 517-51-1
研究领域: 材料科学 · 光电子学 · 半导体物理
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IEEE PHOTONICS TECHNOLOGY LETTERS · 2015 ·Vol. 27 ·期 22 ·2379-2382 · IF 2.11

635-nm Visible Pr3+-Doped ZBLAN Fiber Lasers Q-Switched by Topological Insulators SAs

Duanduan Wu,Zhiping Cai,Yile Zhong,Jian Peng,Jian Weng,Zhengqian Luo,Nan Chen,Huiying Xu

Passive Q-switching of praseodymium (Pr 3+ )-doped fiber lasers at 635 nm with topological insulators (TIs) saturable absorbers (SAs) was experimentally demonstrated for the first time. TIs (Bi 2 Se 3 , Bi 2 Te 3 ) nanosheets were embedded in polyvinyl alcohol for film-forming and incorporated into a visible Pr 3+ -doped fiber laser cavity for Q-switching operation, respectively. The Bi2Se3-based Q-switched fiber laser has a wide range pulse-repetition-rate from 191.6 to 454.5 kHz, and the Bi2Te3 one can be continuously tuned from 164.5 to 403.2 kHz. Both the Q-switching lasers have narrow pulse duration of nanosecond (ns)-level. Our results reveal that the TIs-based SAs are available for pulsed operation in the visible spectral range.

研究领域: 光学工程 · 激光技术 · 材料科学 · 纳米技术 · 量子电子学
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Physica Status Solidi-Rapid Research Letters · 2022 ·Vol. 17 ·期 4 ·2200484 · IF 3.277

Room-Temperature Self-Powered Terahertz Photodetection in Ge-Intercalated Topological Insulator GeBi4Te7

Chenyu Yao,Libo Zhang,Yulu Chen,Cheng Guo,Liu Yang,Yang Lu,Kai Zhang,Lin Wang,Xiaoshuang Chen

Topological insulators (TIs) are under rapid and intensive study in the fields of condensed matter physics, due to exotic electronic properties. Recent studies of photocurrent generation in topological surface states (TSS) properties have insufficient evidence to rule out that of bulk states, hindering the application in optoelectronics. Herein, the chemical vapor transport (CVT) synthesis of GeBi 4 Te 7 crystal by the way of Ge intercalation is realized, enabling isolated Dirac points-associated high-mobility Dirac carriers and larger Seebeck coefficients. Then, the antenna-coupled photodetector in GeBi 4 Te 7 based on planar metal–TI–metal structure is reported, successfully realizing sensitive terahertz response without bias. According to the results, the GeBi 4 Te 7 -based terahertz photodetector has a short response time and a high photoresponsivity (0.42 A W −1 at 0.107 THz and 0.6 A W −1 at 0.28 THz, respectively). The GeBi 4 Te 7 –graphene heterostructure can further improve the responsivity by more than two orders of magnitude, reaching 12 A W −1 at 0.107 THz. These findings bring up doable avenues for GeBi 4 Te 7 materials’ low-energy optoelectronic applications.

研究领域: 凝聚态物理 · 材料科学 · 光电子学
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ACS Nano · 2024 · IF 15.8

Layered Topological Insulator MnBi2Te4 as a Cathode for a High Rate Performance Aqueous Zinc-Ion Battery

Li Wen,Qixiang Zhang,Junjie Shi,Fei Wang,Siliang Wang,Zhiwei Chen,Yang Yue,Yihua Gao

Recently, the topological insulator MnBi2Te4 has aroused great attention owing to its exotic quantum phenomena and intriguing device applications, but the superior performances of MnBi2Te4 have not been researched in the field of electrochemistry. By theoretical calculations, it is found that MnBi2Te4 exhibits excellent Zn2+ storage and transport properties. Therefore, it is speculated that MnBi2Te4 has excellent electrochemical performance in zinc-ion batteries (ZIBs). In this research, MnBi2Te4 as a pioneer has been explored in ZIBs, showing surprising electrochemical properties. The MnBi2Te4 electrode displays a high average discharge specific capacity (264.8 mA h g–1 at 0.40 A g–1), a competitive cycle life (88.6% of initial capacity after 400 cycles at 4.00 A g–1), and an excellent rate performance (average capacity retention rate of 95.1% from 0.40 to 8.00 A g–1) owing to the fast ion transport of the conductive topological surface state and dissipationless channel of the edge state. Surprisingly, the quasi-solid-state (QSS) MnBi2Te4/Zn battery delivers excellent Zn2+ storage capability and possesses a capacity retention of 79.9% after 1000 cycles at 4.00 A g–1. In addition, the QSS MnBi2Te4/Zn battery can exhibit excellent performance and the GCD curves maintain stability without distortion deformation even at temperatures of 0 and 75 °C.

研究领域: 材料科学 · 电化学 · 能源存储
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