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Journal of Physical Chemistry C · 2021 · IF 4.126

Use of Organic Polymer P3HT:PC61BM as the Active Layer to Improve the Performance of ZnO Ultraviolet Photodetector

Siyuan Weng,Man Zhao,Dayong Jiang

One of the most interesting structures of organic photodetectors (OPDs) is the bulk heterojunction (BHJ), which can be achieved by mixing electron donors and electron acceptors in a suitable solvent and then spin-coating. BHJs have proven to be a very useful method to overcome the short diffusion length of organic semiconductor excitons. However, this structure enhances disorder and hinders the collection of photogenerated carriers. Therefore, it is very important to prepare OPDs with this structure. In this paper, we show how to use conjugate polymer donor poly(3-hexylthiophene) (P3HT) and fullerene derivative acceptor 6,6-phenyl C61-butyric acid methyl ester (PC61BM) to form a binary BHJ active layer by spin-coating to improve the performance and detector wavelength of a ZnO ultraviolet (UV) photodetector (PD). Compared with the ZnO UV PD, the responsivity of the OPD can reach 0.58 A W–1, which is increased by about 7.14 times. Furthermore, the OPD shows improved absorption, high photocurrent to dark current ratio (1.63 × 104), and excellent detection capability (3.67 × 1012 Jones). The preparation of a new OPD by this work shows strong performance and provides a new idea for the research of OPD. Therefore, it is very important to design and manufacture ZnO UV PD to form a BHJ OPD with organic polymers P3HT:PC61BM.

研究领域: 材料科学 · 光电探测器研究
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Journal of Materials Chemistry C · 2018 ·Vol. 6 ·期 10 ·2573-2579 · IF 5.976

Broadband hybrid organic/CuInSe2 quantum dot photodetectors

Ruiqi Guo,Ting Shen,Jianjun Tian

“Green” narrow band-gap CuInSe2 quantum dots (QDs) were first introduced in photodetectors. Thus, a broadband hybrid photodetector was obtained by combining the ultraviolet detection of spiro-OMeTAD and the near-infrared detection of CuInSe2 QDs. In order to improve the detection of the device, the oil-soluble CuInSe2 QDs were transformed into water-soluble MPA-capped QDs through ligand exchange, which drastically shortened the length of the surface ligand. The specific detectivity (D*) of the photodetector reached 1.6 × 1012 Jones at 330 nm and 7.5 × 1010 Jones at a 1000 nm wavelength. The unencapsulated device also displayed a fast response time (<0.02 s) and excellent thermal stability (20–100 °C) in ambient air. This work could open a window of toxic-free QD based photodetectors to achieve a broadband response.

CAS / MDL: 112-90-3 7782-49-2
研究领域: 材料科学 · 光学工程
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Advanced Materials Technologies · 2025 · IF 6.2

Enhanced Detection and Stability Performance of Single-Crystal Perovskite Detectors via Solvent-Based Surface Treatments

Maojun Sun,Zuhao Li,Lu Liang,Tong Chen,Qiang Lou,Lin Zhao,Jiazheng Wang,Xinxin Xu,Bosen Zhang,Yufeng Jin,Hang Zhou

Solution-grown metal halide perovskite single crystals (MHP SCs) hold significant promise for applications in photodetection and high-energy radiation detection. However, the detection performance and long-term operational durability of single-crystal perovskite detectors are hindered by surface defects. Conventional mechanical grinding and polishing methods are time-consuming and labor-intensive, and inevitably pose potential risks related to environmental pollution. In this work, a multiple solvent-based surface engineering strategy is proposed to mitigate these issues. By utilizing the 1-octadecene buffer layer and 1-ethyl-3-methylimidazolium bromide (EMIMBr) ionic liquid passivation agent, the surface morphology is effectively improved and the surface defects of MAPbBr 3 single crystals (MPB SCs) are passivated. The treated MPB SCs demonstrate a substantial increase in photoluminescence intensity, nearly five times greater than that of the untreated samples, along with a prolonged PL lifetime. The photodetectors based on treated MPB SCs exhibit a suppressed dark current of 13.5 nA at a bias of 1 V, and improved response speed. Notably, after 110 days, the unencapsulated devices maintain reliable photodetection performance. Benefiting from suppressed leakage current noise, the planar radiation detectors with an Au/MPB SCs/Au device structure exhibit distinct response to 241 Am@5.49 MeV alpha particles at room temperature.

研究领域: 材料科学 · 光电检测 · 表面工程
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ACS Applied Materials & Interfaces · 2022 · IF 10.383

Bioinspired Compound Eyes for Diffused Light-Harvesting Application

Xinxue Wu,Chaolong Fang,Wangdong Xu,Dawei Zhang

Natural compound eyes endow arthropods with wide-field high-performance light-harvesting capability that enables them to capture prey and avoid natural enemies in dim light. Inspired by natural compound eyes, a curved artificial-compound-eye (cACE) photodetector for diffused light harvesting is proposed and fabricated, and its light-harvesting capability is systematically investigated. The cACE photodetector is fabricated by introducing a cACE as a light-harvesting layer on the surface of a silicon-based photodetector, with the cACE being prepared via planar artificial-compound-eye (pACE) template deformation. The distinctive geometric morphology of the as-prepared cACE effectively reduces its surface reflection and the dependence of the projected area on the incident light direction, thereby significantly improving the light-harvesting ability and output photocurrent of the silicon-based photodetector. Furthermore, the performances of cACE, pACE, and bare polydimethylsiloxane (PDMS)-attached photodetectors as diffused light detectors are investigated under different luminances. The cACE-photodetector output photocurrent is 1.395 and 1.29 times those of the bare PDMS-attached and pACE photodetectors, respectively. Moreover, this photodetector has a desirable geometric shape. Thus, the proposed cACE photodetector will facilitate development of high-performance photodetectors for luminance sensing.

研究领域: 光学 · 生物仿生学
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ORGANIC ELECTRONICS · 2021 · IF 3.721

X-ray Sensitive hybrid organic photodetectors with embedded CsPbBr3 perovskite quantum dots

Li Xiang,Xuekai Huang,Ya Wang,Zhilong Xin,Gaoda Chai,Yangbing Xu,Kai Wang,Jun Chen,Chuan Liu,Xinwei Wang,Shengdong Zhang,Hang Zhou

X-ray detection is an important technology for medical diagnosis as well as industrial and security inspections. While today's commercial X-ray detectors are bulky, photodetectors based on organic semiconductors have attracted increasing attention owing to their low temperature processing capabilities, flexibility and low cost. Nonetheless, the low X-ray attenuation coefficient of organic semiconductors still hinders their practical application. Herein, a new organic-inorganic hybrid strategy is proposed to improve the X-ray sensitivity of organic photodetectors (OPDs). A solution-processed X-ray sensitive hybrid OPD is fabricated by embedding CsPbBr 3 quantum dots (QDs) into a P3HT:PC 61 BM bulk heterojunction photodiode . The QDs, acting as embedded scintillators in the organic active layer, maintain a high radioluminescence . The proposed hybrid structure enables indirect X-ray detection in a comprehensive manner. These hybrid photodetectors exhibit suppressed dark current densities in the range of tens of picoamperes per square centimeters for different weight ratios of blended QDs. The best OPD achieves a sensitivity of 229.6 e nGy −1 mm −2 (3.67 μC Gy −1  cm −2 ) and a dark current of 23.3 pA cm −2 at a low operating voltage (−3 V) for 20–80 kV “soft” X-rays, thus representing great potential for the development of next generation low cost, portable, and highly sensitive X-ray detectors.

研究领域: 材料科学 · 医学影像 · 光电技术
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Laser & Photonics Reviews · 2024 · IF 9.8

Sensitive Filter-Free Narrowband Infrared Photodetectors for Weak Light Detection and Ranging

Yin He,Zeyao Han,Junyu Li,Yu Gu,Yousheng Zou,Yao Wang,Jialin Yang,Wei Lei,Xiaobao Xu

Light detection and ranging (Lidar), which utilizes scattered near-infrared (NIR) light to identify objects, has shown great potential in remote sensing, autonomous driving, robotic vision, etc. However, the intensity of the scattered NIR light is significantly reduced, placing stringent demands on the selectivity and fast response of the sensing. Even though optical filters can be used to select weak signals, the photon losses arising from additional interfaces are inevitable, thus reducing the signal-to-noise ratio (SNR). In this work, a series of organic narrowband photodetectors are constructed with tunable and selective responses from 700 to 950 nm with a minimum full-width-at-half-maximum (FWHM) of ≈30 nm. To enhance response sensitivity and speed, delicate and compact photodiode architecture is applied through comprehensive device engineering. As a result, the detectors possess a sensitive response to weak NIR light with a detection limit of 3 nW, and response rise time ( τ r ) and decay time ( τ d ) of ≈24 ns and ≈1.3 µs, respectively. Moreover, a proof-of-concept Lidar based on these organic photodetectors is demonstrated with a distance resolution of ≈10 cm, which further confirms the great potential in practical application.

CAS / MDL: 7789-24-4
研究领域: 光学工程 · 材料科学 · 电子工程
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Flexible and Printed Electronics · 2021 ·Vol. 6 ·期 1 ·015008 · IF 3.588

Flexible indirect x-ray detector enabled by organic photodiode and CsPbBr3 perovskite quantum dot scintillator

Li Xiang,Ya Wang,Xiyuan Liu,Xuekai Huang,Zhilong Xin,Yangbing Xu,Chuan Liu,Kai Wang,Jun Chen,Yang Yang,Shengdong Zhang,Hang Zhou

X-ray photodetection are frequently used in medical diagnoses industrial inspection and environmental radiation detection. Currently, there is an ongoing effort to develop bendable or flexible x-ray photodetectors (PDs) to meet the demand on light weight and arbitrary shape detection system. Here, a highly bendable indirect x-ray PD is designed by coupling a P3HT:PC61BM organic photodetectors (OPDs) with a flexible perovskite quantum dots (QDs) embedded polymer scintillator. The flexible perovskite QDs scintillator exhibits high radioluminescence with emission peak centers at the 537 nm, which falls in maximum absorption range of poly(3-hexylthiophene) (P3HT). The OPD, with 2\,\mu {\text{m }}active layer, exhibits low dark currents in the range of tens of nanoampere per square centimeter over a wide reversed biased range. The OPD demonstrates detectable light signal down to {\text{0}}{\text{.1}}\,\mu {\text{W}}\,{\text{cm}}{{\text{ }}^{ - 2}} and low dose detection capability. The coupling of perovskite QDs scintillator and OPD shows a sensitivity of 638 e nGy−1 mm−2 \left( {{\text{10}}{\text{.2 }}\mu {\text{C G}}{{\text{y}}^{ - {\text{1}}}}{\text{ c}}{{\text{m}}^{ - {\text{2}}}}} \right) at a dose rate of 1 mGy s−1, which brings the possibilities of realizing highly bendable x-ray PDs.

研究领域: 材料科学 · 医学影像 · 辐射检测
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CERAMICS INTERNATIONAL · 2022 · IF 5.532

Sm3+-doped CsPbCl2Br1 nanocrystal glasses facilitating high ultraviolet performance of silicon photodetectors

Yingying Chen,Zhennan Wu,Xiaojuan Liang,Ding Nan,Wen Xu,Weidong Xiang

Inorganic perovskite nanocrystals exhibit tremendous prospects in optoelectronics . Although the stability of perovskite nanocrystals is considerably improved after being embedded in a glass matrix, subtle difference in the glass composition is still an important factor affecting the glass matrix and perovskite precipitation behavior. In this study, a series of CsPbCl 2 Br 1 nanocrystal glasses with excellent optical properties were prepared by optimizing the composition. Further, we introduced Sm 3+ into CsPbCl 2 Br 1 perovskite nanocrystal glass (PNG) to enhance photoluminescence (PL) emissions and improve the ultraviolet response and device stability of silicon photodetectors (Si PDs). After integrating the as-prepared Sm 3+ -doped CsPbCl 2 Br 1 PNG with Si PDs, the UV response of the Si PDs at 200–400 nm was significantly enhanced. In particular, the responsivity of Sm 3+ -doped CsPbCl 2 Br 1 PNG-coated Si PDs at 320 nm reaches 7.5 times that of bare Si PDs. Furthermore, Sm 3+ -doped CsPbCl 2 Br 1 PNG-coated Si PDs displayed good photocurrent stability, with a decrease of only 1.5% after 60 days of operation. Additionally, after integrating 10% Sm 3+ -doped CsPbCl 2 Br 1 PNG with InGaAs PDs, a broadband response in the ultraviolet to the infrared region is successfully achieved. This study attempts to fabricate perovskite nanocrystal glasses and provides a new perspective for next-generation high-performance UV PDs.

研究领域: 材料科学 · 光学工程 · 电子器件
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Nanomaterials · 2019 ·Vol. 9 ·期 12 ·1738 · IF 4.034

Spray Coated Colloidal Quantum Dot Films for Broadband Photodetectors

Kaixuan Song,Jifeng Yuan,Ting Shen,Jiuyao Du,Ruiqi Guo,Tönu Pullerits,Jianjun Tian

A technique for scalable spray coating of colloidal CdSeTe quantum dots (QDs) for photovoltaics and photodetector applications is presented. A mixture solvent with water and ethanol was introduced to enhance the adhesive force between QDs and the substrate interface. The performance of the detector reached the highest values with 40 spray coating cycles of QD deposition. The photodetectors without bias voltage showed broadband response in the wavelength range of 300–800 nm, and high responsivity of 15 mA/W, detectivity of more than 1011Jones and rise time of 0.04 s. A large size QD-logo pattern film (10 × 10 cm2) prepared by the spray coating process displayed excellent uniformity of thickness and absorbance. The large area detectors (the active area 1 cm2) showed almost the same performance as the typical laboratory-size ones (the active area 0.1 cm2). Our study demonstrates that the spray coating is a very promising film fabrication technology for the industrial-scale production of optoelectronic devices.Keywords:quantum dots;spray coating;photodetector

研究领域: 材料科学 · 光电子学
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Coatings · 2021 ·Vol. 11 ·期 9 ·1099 · IF 2.881

Photodetector without Electron Transport Layer Based on Hexane-1,6-Diammonium Pentaiodobismuth (HDA-BiI5) Molecular Semiconductor

Yifei Wang,Xiaoping Zou,Jialin Zhu,Chunqian Zhang,Jin Cheng,Junqi Wang,Xiaolan Wang,Xiaotong Li,Keke Song,Baokai Ren,Junming Li

With the development of the semiconductor industry, research on photoelectronic devices has been emphasized. In this paper, a molecular semiconductor material with a narrow bandgap of hexane-1,6-diammonium pentaiodobismuth (HDA-BiI5) was utilized to prepare photodetectors without electron transport layers. Using a single light source, the effects of different wavelengths and different powers on the photoresponsivity, switching ratio, specific detectivity, and external quantum efficiency of the device were investigated. It is demonstrated that this device has excellent responsivity, specific detectivity, stability, and repeatability, and this work will help expand the application of molecular semiconductor materials for photodetection.Keywords:photodetector;molecular semiconductor;thin films

CAS / MDL: 7787-64-6
研究领域: 材料科学 · 光电技术
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IEEE TRANSACTIONS ON ELECTRON DEVICES · 2023 ·Vol. 70 ·期 8 ·4251-4256 · IF 3.1

Visible to Near-Infrared Light Detectors Based on Au/SnS/Ag Schottky Structure With Ultrahigh Responsivity and Fast Response

Biao He,Yongkai Jing,Xinfa Zhu,Chao Fan,Chun Sun,Yonghui Zhang,Mengjun Wang,Hongxing Zheng,Erping Li

In this work, light detectors utilizing p-type tin monosulfide (p-SnS) few layers with an Au/SnS/Ag Schottky structure are demonstrated. These detectors exhibit broad-spectrum light detection capabilities spanning the visible to near-infrared (NIR) wavelength range. Notably, under NIR 850 nm illumination, the detectors exhibit exceptional photodetection performance with an ultrahigh responsivity of up to 1652.87 $\text{A}\cdot \text{W}^{-{1}}$ , an extremely specific detectivity of $8.05\times 10^{{12}}$ cm $\cdot $ Hz $^{\text {1/{2}}}\cdot \text{W}^{-{1}}$ , and a rapid response time of approximately 6.5 ms. These characteristics surpass those of most 2-D materials-based detectors and even outperform commercial InGaAs (Hamamatsu, InGaAs G8370-85) and Silicon (Hamamatsu, Si S9119-01) detectors. The remarkable photoresponse is attributed to the SnS/Ag Schottky structure, which facilitates the separation of excited electron–hole pairs. Our findings suggest a promising route for developing high-performance optoelectronics based on p-SnS.

研究领域: 光电子学 · 半导体物理 · 纳米材料科学 · 器件物理 · 光学工程
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ACS Photonics · 2024 · IF 6.5

Self-Powered and Broadband Photodetector with High Responsivity and Fast Response Based on La-Doped PbSe Film Heterojunction

Silu Peng,Chaoyi Zhang,Xianchao Liu,Jiayue Han,Chunyu Li,Hongxi Zhou,He Yu,Chao Chen,Jun Gou,Jun Wang

PbSe is one of the most representative materials in lead chalcogenide semiconductors, possessing a narrow bandgap and demonstrating excellent absorption and photoresponse. However, undoped PbSe typically exhibits low carrier concentrations, along with large dielectric constants and thermal expansion coefficients, imposing limitations on its application in a high-performance photodetector. Doping is an effective strategy to overcome the inherent defects and enhance the optical and electrical properties. In this study, different compositions of Pb1−xLaxSe samples were obtained through solid-phase method doping with the rare earth element La. The doped Pb0.7La0.3Se showed superior optical and electrical properties and photoresponse. Additionally, based on the approach of constructing heterojunctions with thin films and two-dimensional (2D) materials, a self-powered p−n heterojunction photodetector, Pb0.7La0.3Se/WSe2, has been successfully fabricated. The device exhibited a continuous and stable light response from 405 to 1550 nm. Moreover, under 0 V bias and 650 nm laser irradiation, the device achieved the responsivity and specific detectivity of 22.85 A/W and 1.81 × 1012 Jones, along with a rapid response/recovery time (162/135 μs), demonstrating excellent photovoltaic effects and outstanding photodetection performance. The construction of heterojunctions with film and 2D materials provides a novel approach to achieving high-performance photodetectors. Simultaneously, the Pb0.7La0.3Se/WSe2 detector shows enormous potential in the field of superior photodetectors with a high on/off ratio, low noise, broadband, rapid response, and miniaturization.

CAS / MDL: 7439-92-1
研究领域: 材料科学 · 光电技术
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