JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
·
2025
·
IF 6.2
Xin Fan,Xiaoqin Tian,Jianxin Chi,Jiao Zhao,Youjin Zheng,Fangbiao Wang,Lei Zhang,Qi Chen,Hongan Ma
In this paper, the electropositive-electronegative double-filled skutterudite, which is challenging or impossible to synthesize via conventional methods, was successfully prepared using a high-pressure and high-temperature (HPHT) method. The successful filling of Ba-S into the voids of the CoSb 3 crystal structure was confirmed through X-ray diffraction, enthalpy of formation calculations, and EDS spectral analysis. The experimental results indicate that the skutterudite material with porous structure has a lower thermal conductivity of 1.07 W m −1 K −1 at 773 K. The Callaway model fitting analysis revealed that the introduction of Ba, S, and Te enhances both point defect scattering and resonance scattering, thereby effectively reducing the lattice thermal conductivity Consequently, the sample achieves a maximum zT value of 1.44 at 773 K. This work provides novel insights into the study of thermoelectric properties in skutterudite materials.
研究领域:
材料科学
·
物理学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2022
·
IF 5.532
Xin Fan,Yaqi Chen,Qi Chen,Yao Wang,Dayi Zhou,Lijie Chang,Xinjian Li,Yuewen Zhang,Hongan Ma,Xiaopeng Jia
A series of graphene-S 0.05 Co 4 Sb 11.6 Te 0.4 (C x -S 0.05 Co 4 Sb 11.6 Te 0.4 ) composite polycrystalline skutterudite materials with graphene stoichiometric ratio of x = 0, 0.05, 0.10, 0.20 have been successfully prepared by high pressure and high temperature (HPHT) technology. Graphene is a two-dimensional material with large carrier mobility and large specific surface area. Through microscopic observation, it is found that graphene is attached to the grains in the sample. At the same time, with the increase of graphene content, grain growth is inhibited. Graphene addition reduces the thermal conductivity of skutterudite by increasing grain boundaries and achieves the purpose of optimizing its thermoelectric properties. At the same time, there are numerous lattice defects and distortions introduced in skutterudite synthesized by HPHT technology. Finally, the samples were synthesized under the conditions of 1.5 GPa and 900 K. The lattice thermal conductivity of the graphene composite sample C x -S 0.05 Co 4 Sb 11.6 Te 0.4 with x = 0.10 reaches a minimum of 0.99 at 773 K, and the zT value of this sample is 1.25 at 773 K, which is greater than pure S 0. 05 Co 4 Sb 11.6 Te 0.4 , its zT value is 1.00 at 773 K. Compared with the method of synthesizing skutterudite under normal pressure, the HPHT technology can dramatically reduce the reaction time from several days to less than 30 min, while forming a high-pressure airtight reaction environment, which can effectively prevent the volatilization and oxidation of samples during the reaction process, thus providing a convenient method for synthesizing thermoelectric materials quickly and efficiently.
研究领域:
材料科学
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热电材料研究
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产品关联
DOI
高影响因子
MODERN PHYSICS LETTERS B
·
2023
·
IF 1.9
Yaqi Chen,Xin Fan,Shan Gao,Wenting Ji,Xinjian Li,Yuewen Zhang,Hongan Ma,Xiaopeng Jia
Electronegative S-filled skutterudite compounds have attracted considerable attention due to scattering of low-frequency phonons (35–50 cm − 1 ), but there are few reports on S-filled double-substituted skutterudite. In this work, a series of S-filled Te-Sn double-substituted skutterudite compounds were synthesized using high pressure and high temperature (HPHT) method. The phase composition, microstructure, and thermoelectric properties of S x Co 4 Sb 1 1 Te 0 . 7 Sn 0 . 3 ( x = 0 , 0.05, 0.10, 0.20) samples were systematically determined. The results show that the introduction of S increases the substitution limit of Te in the Sb site. Under the combined effect of the sample synthesis pressure and S filling, the nucleation density of the sample grains increases and the grain size decreases. At the same time, there are numerous special microstructures in the samples synthesized in a high-pressure environment. Thermoelectric performance studies show that a small amount of S filling optimizes the Seebeck coefficient of the sample and increases the power factor (PF). With an increase of the amount of S introduced, the thermal conductivity of the samples decreases significantly. Therefore, the maximum zT value of an S 0 . 0 5 Co 4 Sb 1 1 Te 0 . 7 Sn 0 . 3 sample synthesized at 2.5 GPa pressure is 0.17 at room temperature. The maximum zT value of the sample is 1.26 at 773 K.
研究领域:
材料科学
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能源科学
✓ 已验证
产品关联
DOI
高影响因子
CERAMICS INTERNATIONAL
·
2025
·
IF 5.6
Ying Wang,Shanze Liu,Fangbiao Wang,Xin Fan,Qi Chen,Youjin Zheng
The high-pressure effect can effectively regulate the bandgap width of thermoelectric materials, thus optimizing the material properties. In this study, the high temperature and high pressure (HPHT) technique was employed to synthesize In-filled, Te/S double-substituted skutterudite-based thermoelectric materials. The effects of synthesis pressures ranging from 2.0 to 3.5 GPa on their phase structure, microstructure, and thermoelectric properties were systematically investigated. XRD and EDS analyses confirm the phase-pure synthesis of In 0.05 Co 4 Sb 11.3 Te 0.6 S 0.1 . The experimental results combined with first-principles calculations indicate that the pressure-induced bandgap widens from 0.245 eV at 2.0 GPa to 0.270 eV at 3.0 GPa, resulting in not only an exponential decay of the conductivity but also a significant increase in the absolute value of the Seebeck coefficient. The analysis based on the Callaway model demonstrates that introducing In, Te, and S elements strengthens grain boundaries, increases point defects, and enhances resonance scattering, thereby effectively reducing lattice thermal conductivity. At 773 K, the 3.0 GPa sample exhibits the lowest thermal conductivity of 1.56 Wm −1 K −1 and a maximum zT value of 1.20, representing a 40.18 % increase over that of the sample synthesized at 2.0 GPa and an 11.02 % increase over that of the Co 4 Sb 11.3 Te 0.6 S 0.1 sample. In addition, the sample synthesized at 3.5 GPa demonstrates excellent mechanical performance, exhibiting a Vickers hardness of 11.12 GPa. New strategies have been provided for the development of materials with both high thermoelectric and mechanical properties.
研究领域:
材料科学
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凝聚态物理
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无机非金属材料
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能源材料
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热电转换
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产品关联
DOI
高影响因子
SCRIPTA MATERIALIA
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2020
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IF 5.079
Feng Guo,Pengfei Wen,Bo Duan,Yao Li,Xilong Zhou,Pengcheng Zhai
Co 4 Sb 11.5 Te 0.5 hybrid composites with dual-nano inclusions (1 vol %) of SiC whiskers (SiC w ) and SiC particles (SiC p ) are prepared by spark plasma sintering . It is found that the hybrid composites exhibit further improved flexural strength and fracture toughness compared with those reinforced by SiC w or SiC p alone, indicating a striking synergistic enhancement effect. And the dimensionless figure of merit values of the hybrid composites remain nearly unchanged compared with the sample reinforced by individual inclusion. Our study provides an effective route to further improve the mechanical prosperities of thermoelectric materials .
研究领域:
材料科学
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热电材料
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复合材料
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固态物理
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无机非金属材料
✓ 已验证
DOI
高影响因子
MATERIALS LETTERS
·
2018
·
IF 2.687
Ying Lei,Wensheng Gao,Yu Li,Rundong Wan,Wen Chen,Rui Zheng,Leiqiang Ma,Hongwei Zhou
In the present wok, a series of Ti-filled and Te-doped skutterudite compounds Ti x Co 4 Sb 11.5 Te 0.5 (x = 0.2, 0.3, 0.5) were successful fabricated by combination of microwave synthesis and spark plasma sintering technique. The microstructure and thermoelectric properties of Ti x Co 4 Sb 11.5 Te 0.5 bulks have been investigated systematically. The experimental results show that nearly single phase skutterudite were obtained by 5 min microwave synthesis. The Ti 0.3 Co 4 Sb 11.5 Te 0.5 bulk has smallest and uniform grain size of about 2 μm. The influences of Ti concentration on thermoelectric properties were discussed. A highest ZT of 0.60 for Ti 0.3 Co 4 Sb 11.5 Te 0.5 was achieved at 773 K along with a total thermal conductivity of 3.72 W m −1 K −1 , one might obtain higher values at a higher temperature.
研究领域:
材料科学
·
热电材料
✓ 已验证
产品关联
DOI
高影响因子
Journal of Materials Chemistry A
·
2018
·Vol. 6
·期 16
·6772-6779
·
IF 9.931
Fan Chen,Ruiheng Liu,Zheng Yao,Yunfei Xing,Shengqiang Bai,Lidong Chen
Skutterudite-based thermoelectric materials have great potential for use in waste heat recovery, but the conventional melting–quench–annealing process is not suitable for large-scale fabrication. In this study, we developed a rapid fabrication technique that combines scanning laser melting and spark plasma sintering to synthesize bulk n-type and p-type filled skutterudites. The kinetics process and microstructure evolution during the scanning laser melting and annealing were systematically investigated. Due to fast solidification in scanning laser melting, the peritectic segregation size of precursor resultants is confined to several microns, which leads to great shortening of the fabrication period of filled skutterudites. The as-synthesized n-type and p-type filled skutterudites achieve excellent dimensionless figures of merit: ZT ∼ 1.23 at 850 K for Yb0.4Co4Sb12.1; ZT ∼ 1.09 at 700 K for In0.5Co4Sb12.1; ZT ∼ 0.79 at 750 K for Ce0.95Fe3CoSb12.1, which are among the highest values of single filled skutterudites. The shortened processing period and enhanced thermoelectric performance make this novel synthesis method suitable for industrial-level large-scale fabrication of skutterudite-based thermoelectric materials.
研究领域:
材料科学
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热电材料
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金属学与冶金工程
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固态物理
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先进制造技术
✓ 已验证
DOI
高影响因子
Advanced Energy Materials
·
2025
·
IF 26
Yao Wang,Jianrui Wang,Xiao Xu,Yan Wang,Baohai Jia,Shangyang Li,Kornelius Nielsch,Jiaqing He
The excellent performance of skutterudites is related to the interrelated filling fraction and doping limitation of the intricate matrix. Especially for the investigation of n-type electronegatively filling samples, the exceptionally low doping capacity at Sb sites leads to severely compromised thermoelectric performance. Here, a breakthrough is achieved in surpassing conventional doping limits by developing a novel “electrical compensation-bonding modulation” method, contributing to the reconfiguration of the unique X 4 ring structure (Consists of Sb 4 units) in S 0.2 Se 0.05 Co 4 Sb 12-x Te x skutterudites. The modulated bond hierarchy and disorder enable a concurrent regulation of phonon and carrier transport, resulting in a significant improvement of the transport properties. Building upon this foundation, a revolutionary off-center state has been introduced to the matrix via continuous doping of Se at Sb sites, aimed at suppressing the lattice thermal conductivity. Ultimately, a peak zT of 1.8 at 800 K is achieved, with an average zT of 1.1 across the 300–800 K temperature range. This work provides a universal approach to overcome doping limits in Co 4 Sb 12 -based thermoelectrics.
研究领域:
材料科学
·
热电学
·
固态化学
·
能源材料
✓ 已验证
产品关联
DOI
高影响因子
危险品化学品经营许可证（带存储）