Sustainable Energy & Fuels
·
2020
·Vol. 4
·期 8
·3943-3950
·
IF 5.503
Hongpeng Zhou,Menglei Feng,Peiyuan Li,Xiangnan Gong,Dingke Zhang,Shijian Chen
Layered Sb2Se3 consists of infinite chains of repeating Sb4Se6 units stacked along the c-axis via Sb–Se covalent bonds, whereas they are linked by van der Waals force along the a-axis and b-axis. It usually tends to grow along the [hk0] orientation with low surface energy. However, [001]-oriented growth, which efficiently enhances charge transport, is often considered unstable due to its high surface energy. Herein, we propose a growth method to fabricate Sb2Se3 thin films with the preferential [001]-orientation on various substrates (Mo, MoSe2, SLG, NiO, SiO2 and FTO). This crystal facet design of preferentially [001]-oriented Sb2Se3 exposes the majority of the nanoribbons vertically aligned to the substrate, and thus maximally improves the charge transport, which may find applications in diverse optoelectronic devices. We confirmed their performance in photoelectrochemical water reduction. The preferentially [001]-oriented Sb2Se3 photocathode exhibited an impressive photocurrent density of −20.5 mA cm−2 at 0 V vs. RHE and a maximum photocurrent density of −28 mA cm−2 at −0.2 V vs. RHE under 1 sun AM 1.5 G illumination. Thus, the successful use of this [001]-Sb2Se3 photocathode paves the way for the development of high-efficiency Sb2Se3-based devices for optoelectronic applications.
研究领域:
材料科学
·
半导体物理
·
光电化学
·
纳米材料
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能源材料
✓ 已验证
DOI
高影响因子
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
·
2018
·Vol. 215
·期 11
·1700905
·
IF 1.795
Shuping Deng,Decong Li,Liping Zheng,Yu Tang,Zhong Chen,Luqi Sun,Wenting Liu,Lanxian Shen,Shukang Deng
In this work, the effect of Cd and Sn atoms partly substitution for Zn on among crystal growth, thermal stability, mechanical, and electrical transport property in β-Zn 4 Sb 3 is reported. In a series of samples prepared from the atomic ratios of Zn:Sb:Cd:Sn = 4.4:3: x :3 ( x = 0.2, 0.4, 0.6, and 0.8). Carrier concentration of all samples varies from 4.52 × 10 19 to 6.42 × 10 19 cm −3 as carrier mobility changes from 58.27 to 67.93 cm 2 V −1 s −1 at room temperature. As a result, electrical transport properties of the samples are optimized by Cd Sn co-doped. The experimental density of all the samples varies from 6.26 × 10 3 to 6.34 × 10 3 kg m −3 consistent with the theoretical value. The weight loss and melting point of the sample are determined to discuss thermal stability in the heating process in air, indicating that the single crystals β-Zn 4 Sb 3 possess an excellent thermal stability and it is practical importance in the TE application at high temperature. Consequently, the maximal power factor of 1.70 × 10 −3 W m −1 K −2 is achieved at 540 K for the sample with initial Cd content x = 0.2, which is enhanced by 40% compared with the single-doping system in β-Zn 4 Sb 3 .
研究领域:
材料科学
·
热电材料
·
固体物理
·
无机化学
·
功能材料
✓ 已验证
DOI
高影响因子
Small
·
2024
·Vol. 21
·期 1
·2403051
·
IF 13
Yandi Luo,Hongli Ma,Nafees Ahmad,Usman Ali Shah,Zhuanghao Zheng,Shuo Chen,Zhenghua Su,Jun Zhao,Xianghua Zhang,Guangxing Liang
Antimony selenide (Sb 2 Se 3 ) has demonstrated considerable potential and advancement as a light-absorbing material for thin-film solar cells owing to its exceptional optoelectronic characteristics. However, challenges persist in the crystal growth, particularly regarding the nucleation mechanism during pre-selenization process for Sb 2 Se 3 . The defects originating from this process significantly impact the quality of the absorber layer, leading to the degradation in the power conversion efficiency (PCE) of the device. Herein, the evolution of pre-selenization using rapid thermal processing (RTP) on the crystallization quality of Sb 2 Se 3 film is systematically investigated. By optimizing the initial nucleation process during pre-selenization, resulting in a reduction of grain boundaries and nucleation centers, the Sb 2 Se 3 thin films demonstrate enhanced crystallinity and pinholes-free morphology. It is found that the improved quality of the grain interior and interfaces of the Sb 2 Se 3 absorber can mitigate intrinsic defects within the bulk layer, and passivate interfacial defect recombination. As a result, the short circuit current density ( J SC ) is elevated to 28.97 mA cm −2 , and a competitive efficiency of 9.03% is achieved in Sb 2 Se 3 device. This study provides comprehensive insight into the process of crystal growth and the mechanism for defect suppression, which holds guiding significance for advancing photovoltaic performance.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
薄膜制备
·
凝聚态物理
·
能源材料
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2015
·
IF 2.999
Chuanying Wang,Xianhua Cheng
β-NaYF 4 :Yb 3+ /Er 3+ microcrystals codoped with Cr 3+ ions were prepared for the first time via a facile hydrothermal method . The influence of doping concentration of Cr 3+ ions on growth and upconversion (UC) luminescence properties of β-NaYF 4 :Yb 3+ /Er 3+ microcrystals were investigated in detail. Scanning electron microscopy (SEM), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectra and photoluminescence (PL) spectra were used for characterization. The results demonstrated that the morphology and size of β-NaYF 4 :Yb 3+ /Er 3+ microcrystals were influenced by doping concentration of Cr 3+ ions, the possible mechanism was proposed. The UC intensity of β-NaYF 4 :Yb 3+ /Er 3+ microcrystals was significantly enhanced by doping of Cr 3+ ions. In contrast to β-NaYF 4 :Yb 3+ /Er 3+ microcrystals without doping of Cr 3+ ions, the green and red emission intensities of the microcrystals codoped with 15 mol% Cr 3+ ions were enhanced by 16 and 7 times, respectively. The enhancement of the UC intensities should be ascribed to the distortion of local symmetry around Er 3+ ions, the UC mechanism was discussed. This work will be helpful for improving the UC intensity of other lanthanide-doped UC nano- and micro-crystals.
研究领域:
材料科学
·
无机化学
·
光功能材料
·
纳米医学
·
生物成像
·
分子影像学
·
光学材料
✓ 已验证
DOI
高影响因子
Russian Journal of Physical Chemistry A
·
2024
·Vol. 97
·期 14
·3227-3237
·
IF 0.7
Zheng Yayuan
This paper investigates the kinetics of sodium sulfate crystallization in a stirred bed crystallizer through experimental analysis, focusing on the homogeneous and heterogeneous nucleation mechanisms of the compound. Key nucleation parameters, including tension (γ), critical nucleation radius ( r* ), critical nucleation free energy (Δ G* ), and critical nucleation molecule number ( i* ), are measured under various temperatures and supersaturation ratios, utilizing classical nucleation theory. The results demonstrate that as temperature and supersaturation ratio increase, induction time, critical nucleation free energy, critical nucleation radius, and critical molecule number decrease, while nucleation rate increases. The crystal shape remains relatively constant with changes in temperature and supersaturation ratio, but the average particle size increases with higher supersaturation and temperature. The observed changes in nucleation parameters are consistent with classical nucleation theory. In addition, population balance equations are employed to fit kinetic equations for crystal nucleation and growth rates in a stirred crystallization system. The results show that the growth rate increases with higher supersaturation and stirring rates, while the influence of parameters in the nucleation rate equation suggests that suspension density has the greatest effect, followed by supersaturation ratio and stirring rate.
研究领域:
化学工程
·
材料科学
·
物理化学
·
过程工程
·
晶体工程
✓ 已验证
DOI
高影响因子
JOURNAL OF ALLOYS AND COMPOUNDS
·
2017
·
IF 3.133
Lei Meng,Bin Yao,Yongfeng Li,Zhanhui Ding,Zhenyu Xiao,Kaisi Liu,Gang Wang
The back contact adhesion is the important factor of the microstructural performance which can determine the optoelectronic properties of the kesterite-based solar cells. Here, we present a rational and effective strategy to significantly enhance the back contact adhesion of Cu 2 (Zn,Cd)Sn(S,Se) 4 (CZCTSSe) absorber layers by insetting the appropriate thickness carbon-doping CZCTS thin films . We chose the oleylamine as the carbon-doping reagent which can generate a small amount of carbon in the annealing process . The suitable thickness carbon-doping CZCTS films can significantly change the crystal growth mechanism of CZCTSSe absorber layers, and eliminate the holes in the back contact. The efficiency of CZCTSSe solar cells fabricated by insetting the appropriate thickness carbon-doping CZCTS films is above 7%, and shows the excellent repeatability and long-term air stability compared with the control devices.
研究领域:
材料科学
·
光伏技术
·
半导体物理
·
表面与界面工程
·
无机功能材料
✓ 已验证
DOI
高影响因子
Nanoscale
·
2019
·Vol. 11
·期 36
·16907-16918
·
IF 6.97
Hong Lin,Jian Mao,Minchao Qin,Zhilong Song,Wanjian Yin,Xinhui Lu,Wallace C. H. Choy
While red is one of the primary colors for display applications, the investigation of visible red emitting perovskites, particularly 2D perovskites, is relatively limited. In this work, we demonstrate a single-phase Ruddlesden–Popper quasi-2D (C3H7NH3)2CsPb2I7 perovskite for red color LEDs. Through increasing the annealing temperature of (C3H7NH3)2CsPb2I7 perovskite thin films, we have successfully achieved tunable emission wavelengths from 654 to 691 nm. Equally important, for all the quasi-2D perovskite LEDs, once the annealing temperature is fixed, the emission spectrum is independent of bias voltages, which is very important for their use in lighting and displays. With the analysis of the crystallinity, morphology, and thermodynamic stability of the quasi-2D perovskite, we find that the obtained (C3H7NH3)2CsPb2I7 perovskite is a single-phase quasi-2D perovskite with only n = 2 phase. Besides, we found that the red shifting of emission wavelength is caused by the increase of perovskite crystal size while increasing the annealing temperature. Our results also show that the temperature-induced color tunability can be applied to a series of quasi-2D perovskites with different alkylammonium cations. Importantly, we find that short alkylammonium spacers offer better electrical properties for efficient current transport and high performance in LED applications. This work contributes to controlling the optoelectronic properties of quasi-2D perovskites via controlling their crystal growth as well as paves the way to realize practical lighting and display applications of perovskite LEDs.
研究领域:
材料科学
·
光电功能材料
·
半导体器件
·
纳米结构材料
·
固态照明
✓ 已验证
DOI
高影响因子
APPLIED SURFACE SCIENCE
·
2022
·
IF 7.392
Chitengfei Zhang,Liuyi Cai,Rong Tu,Yingqiu Zheng,Bao-Wen Li,Song Zhang
Due to its nontoxicity, suitable bandgap, high defect tolerance and high electron mobility, layered BiI 3 has been gaining attention in photoelectric device and nonlinear optics field. However, the growth of large-size single crystal 2D BiI 3 has not been achieved. Herein, the synthesis of single crystal 2D BiI 3 on mica substrate via a cooling-induced growth method is reported, with the thickness of 8 ∼ 1000 nm and a lateral dimension of 110 ∼ 1000 μm. X-ray diffraction and selected area electron diffraction demonstrate the single crystal nature of 2D BiI 3 flakes. The high temperature during heat preservation step prevents the deposition of BiI 3 vapor, and then, when proceeding to cooling-induced growth step, single crystal 2D BiI 3 flakes start to nucleate on colder mica substrate and grow up to ∼ 1000 μm (lateral dimension) rapidly. The stability test indicates the 2D BiI 3 flake decomposes with the present of both O 2 and water. Finally, the cooling rate, height of crucible, holding temperature and type of substrate have also been investigated to show the structural evolution of 2D BiI 3 flakes.
研究领域:
材料科学
·
凝聚态物理
·
纳米材料
·
晶体生长
·
光电器件
✓ 已验证
DOI
高影响因子
Advanced Electronic Materials
·
2021
·Vol. 8
·期 4
·2101125
·
IF 7.295
Qi-Qi Wang,Fan Li,Sheng-Qing Xia,Jian Liu,Xiao-Cun Liu,Ling Chen,Cheng-Qian Zhang
The single crystal growth of Mg 3 Bi 2 -based thermoelectric materials is of great significance for their applications near room temperature. So far, it is still a big challenge to grow such bulk single crystals and attempts are primarily focused on the metal flux methods. For the first time, bulk single crystals of n-type Mg 3 Bi 1.49 Sb 0.5 Te 0.01 are directly grown by applying an In-situ Loading Bridgman method. The as-grown single crystal features an excellent carrier mobility of 220 cm 2 V −1 s −1 , which is among the best compared to other Mg 3 Bi 2 -based bulk materials. Besides, this method is successfully developed to fast grow uniform polycrystalline materials with high thermoelectric and mechanic performance. As demonstrated by the single-leg device, a large temperature difference of 10.5 K is achieved at the supplied electric current of 0.6 A, much superior to other room temperature state-of-the-art thermoelectric materials. With the single crystalline and polycrystalline materials prepared reliably and conveniently, in-depth investigations on the Mg 3 Bi 2 thermoelectric system can be greatly benefited, which should as well significantly facilitate their practical applications at room temperature.
研究领域:
材料科学
·
热电学
·
凝聚态物理
·
晶体生长
·
功能材料
·
能源材料
✓ 已验证
DOI
高影响因子
Advanced Optical Materials
·
2016
·Vol. 4
·期 11
·1829-1837
·
IF 5.359
Yucheng Liu,Jiankun Sun,Zhou Yang,Dong Yang,Xiaodong Ren,Hua Xu,Zupei Yang,Shengzhong (Frank) Liu
CH 3 NH 3 PbX 3 (MAPbX 3 )-based perovskite has attracted tremendous research efforts in the last few years. With the discovery that the HC(NH 2 ) 2 PbI 3 (FAPbI 3 ) perovskite offers even higher solar cell efficiency, better thermal stability, and broader optical absorption, it is expected that it will provide more excitement in optoelectronic applications including laser, LED, photodetector, etc. The development in preparing large Single-Crystalline Formamidinium-Perovskite FAPbI 3 using the inverse-temperature reactive crystallization process, and associated wafer-slicing process is presented. The availability of the large Single-Crystalline Formamidinium-Perovskite Wafer makes it possible to fabricate integrated circuits. An array of 153 photodetectors on a piece of thin wafer, demonstrating feasibility of mass production of integrated circuits on the perovskite wafer is designed and prepared. It is found that the wafer-based photodetector shows much superior performance, with 90 times higher photoresponse and broader optical absorption than its thin-film perovskite counterpart.
研究领域:
材料科学
·
半导体物理
·
光电子学
·
晶体生长
·
器件 fabrication
✓ 已验证
DOI
高影响因子
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
·
2019
·Vol. 30
·期 18
·17440-17446
·
IF 2.195
Wang Tianxiong,Meng Xianquan
We try to synthesize In x Ga 1−x Sb nanowires on silicon (100) substrate using InSb and GaSb as source materials and we succeeded. Au film was used as catalysts. The experiment is simple and repeatable. The diameter of the grown nanowires is 60–200 nm and up to 10 microns in length. The grown nanowires have good crystallinity. Due to the doping of indium, we found that the XRD peaks of nanowires were shifted. We have fabricated fully nanostructured device using ultra-long Ag nanowires as electrodes for the I–V characteristic study, and found that the device has photoresponse characteristics and the I–V characteristic curve was asymmetric, we explain that it was due to the asymmetry of this fully nanostructured devices.
研究领域:
材料科学
·
纳米科技
·
半导体物理
·
固体电子学
·
晶体生长
✓ 已验证
DOI
高影响因子
ACS Applied Materials & Interfaces
·
2023
·
IF 9.5
Chuangwei Sheng,Yonghao Bu,Yanyan Li,Liqin Su,Yue Yu,Dan Cao,Jing Zhou,Xiaoshuang Chen,Wei Lu,Haibo Shu
The epitaxial growth of low-dimensional tin chalcogenides SnX (X = S, Se) with a controlled crystal phase is of particular interest since it can be utilized to tune optoelectronic properties and exploit potential applications. However, it still remains a great challenge to synthesize SnX nanostructures with the same composition but different crystal phases and morphologies. Herein, we report a phase-controlled growth of SnS nanostructures via physical vapor deposition on mica substrates. The phase transition from α-SnS (Pbnm) nanosheets to β-SnS (Cmcm) nanowires can be tailored by the reduction of growth temperature and precursor concentration, which originates from a delicate competition between SnS-mica interfacial coupling and phase cohesive energy. The phase transition from the α to β phase not only greatly improves the ambient stability of SnS nanostructures but also leads to the band gap reduction from 1.03 to 0.93 eV, which is responsible for fabricated β-SnS devices with an ultralow dark current of 21 pA at 1 V, an ultrafast response speed of ≤14 μs, and broadband spectra response from the visible to near-infrared range under ambient condition. A maximum detectivity of the β-SnS photodetector arrives at 2.01 × 108 Jones, which is about 1 or 2 orders of magnitude larger than that of α-SnS devices. This work provides a new strategy for the phase-controlled growth of SnX nanomaterials for the development of highly stable and high-performance optoelectronic devices.
研究领域:
材料科学
·
纳米技术
·
光电子学
·
半导体物理
·
晶体生长
✓ 已验证
DOI
高影响因子
危险品化学品经营许可证（带存储）